Research paper
Experimental GrowthExperimental CharacterizationComputational DFTComputed PhononEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations7 characterizations5 properties9 figures
2 preparations7 characterizations5 properties9 figures
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Unconventional Spin-orbit Torques by Two-dimensional Multilayered MXenes for Future Nonvolatile Magnetic Memories
ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires
GRAPHENE WIRING STRUCTURE AND METHOD FOR MANUFACTURING GRAPHENE WIRING STRUCTURE
DOUBLE-LAYER GRAPHENE OPTICAL MODULATORS AND METHODS OF FABRICATION THEREOF
Anisotropic transverse magnetoresistance temperature dependence in Mn3Ga Weyl semimetal with chiral anomaly
Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates
Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)
kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
Bias sputtering of granular L10-FePt films with hexagonal boron nitride grain boundaries
Substrate induced optimization of the Electrocatalytic Hydrogen Evolution Reaction (HER) performances of MoS2 thin films
Bulk and film synthesis pathways to ternary magnesium tungsten nitrides
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations7 characterizations5 properties9 figures
2 preparations7 characterizations5 properties9 figures
Related documents with shared materials, methods, properties, or citations.
Unconventional Spin-orbit Torques by Two-dimensional Multilayered MXenes for Future Nonvolatile Magnetic Memories
ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires
GRAPHENE WIRING STRUCTURE AND METHOD FOR MANUFACTURING GRAPHENE WIRING STRUCTURE
DOUBLE-LAYER GRAPHENE OPTICAL MODULATORS AND METHODS OF FABRICATION THEREOF
Anisotropic transverse magnetoresistance temperature dependence in Mn3Ga Weyl semimetal with chiral anomaly
Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates
Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)
kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
Bias sputtering of granular L10-FePt films with hexagonal boron nitride grain boundaries
Substrate induced optimization of the Electrocatalytic Hydrogen Evolution Reaction (HER) performances of MoS2 thin films
Bulk and film synthesis pathways to ternary magnesium tungsten nitrides
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations7 characterizations5 properties9 figures
2 preparations7 characterizations5 properties9 figures
Related documents with shared materials, methods, properties, or citations.
Unconventional Spin-orbit Torques by Two-dimensional Multilayered MXenes for Future Nonvolatile Magnetic Memories
ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires
GRAPHENE WIRING STRUCTURE AND METHOD FOR MANUFACTURING GRAPHENE WIRING STRUCTURE
DOUBLE-LAYER GRAPHENE OPTICAL MODULATORS AND METHODS OF FABRICATION THEREOF
Anisotropic transverse magnetoresistance temperature dependence in Mn3Ga Weyl semimetal with chiral anomaly
Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates
Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)
kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
Bias sputtering of granular L10-FePt films with hexagonal boron nitride grain boundaries
Substrate induced optimization of the Electrocatalytic Hydrogen Evolution Reaction (HER) performances of MoS2 thin films
Bulk and film synthesis pathways to ternary magnesium tungsten nitrides
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 preparations7 characterizations5 properties9 figures
2 preparations7 characterizations5 properties9 figures
Related documents with shared materials, methods, properties, or citations.
Unconventional Spin-orbit Torques by Two-dimensional Multilayered MXenes for Future Nonvolatile Magnetic Memories
ZrN nucleation layer provides backside ohmic contact to MBE-grown GaN nanowires
GRAPHENE WIRING STRUCTURE AND METHOD FOR MANUFACTURING GRAPHENE WIRING STRUCTURE
DOUBLE-LAYER GRAPHENE OPTICAL MODULATORS AND METHODS OF FABRICATION THEREOF
Anisotropic transverse magnetoresistance temperature dependence in Mn3Ga Weyl semimetal with chiral anomaly
Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates
Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)
kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
Bias sputtering of granular L10-FePt films with hexagonal boron nitride grain boundaries
Substrate induced optimization of the Electrocatalytic Hydrogen Evolution Reaction (HER) performances of MoS2 thin films
Bulk and film synthesis pathways to ternary magnesium tungsten nitrides