Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates

B. Orfao; M. Abou Daher; H. Bouillaud; Y. Roelens; P. Prystawko; R. Kucharski; M. Bockowski; M. Zaknoune

doi:10.48550/arxiv.2601.05958

Paper details

Research paper

Experimental Characterization

Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates

B. Orfao, M. Abou Daher, H. Bouillaud, Y. Roelens et al.

2025·arXiv:2601.05958

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Circular GaN Schottky barrier diode fabricated on a sapphire substrate; measurements performed on a 140 um diameter diode.

2 preparations2 characterizations3 properties5 figures

ExperimentalGaNStudied MaterialAl₂O₃Substrate / Dielectric

Circular GaN Schottky barrier diode fabricated on a GaN ammonothermal substrate; measurements performed on a 140 um diameter diode.

2 preparations1 characterization2 properties4 figures

ExperimentalGaNStudied Material

Materials

GaN

Studied Material

Also known as

gallium nitridenative GaN

studied material

sapphire

Al₂O₃

Substrate / Dielectric

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Fet Carrier Concentration	ND	19000000000000000cm⁻³	GaN	Circular GaN Schottky barrier diode fabricated on a sapphire	—
Fet Carrier Concentration	ND	110000000000000000cm⁻³	GaN	Circular GaN Schottky barrier diode fabricated on a GaN ammo	—
Trap Energy Level	Poole-Frenkel emission trap energy	0.75eV	GaN	Circular GaN Schottky barrier diode fabricated on a GaN ammo	—
Trap Energy Level	trap-assisted tunneling trap energy	0.3eV	GaN	Circular GaN Schottky barrier diode fabricated on a sapphire	—
Trap Energy Level	Poole-Frenkel emission trap energy	0.9eV	GaN	Circular GaN Schottky barrier diode fabricated on a sapphire	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Carrier Concentration	ND	19000000000000000cm⁻³	GaN	Circular GaN Schottky barrier diode fabricated on a sapphire	—
Fet Carrier Concentration	ND	110000000000000000cm⁻³	GaN	Circular GaN Schottky barrier diode fabricated on a GaN ammo	—
Trap Energy Level	Poole-Frenkel emission trap energy	0.75eV	GaN	Circular GaN Schottky barrier diode fabricated on a GaN ammo	—
Trap Energy Level	trap-assisted tunneling trap energy	0.3eV	GaN	Circular GaN Schottky barrier diode fabricated on a sapphire	—
Trap Energy Level	Poole-Frenkel emission trap energy	0.9eV	GaN	Circular GaN Schottky barrier diode fabricated on a sapphire	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Carrier Concentration	ND	19000000000000000cm⁻³	GaN	Circular GaN Schottky barrier diode fabricated on a sapphire	—
Fet Carrier Concentration	ND	110000000000000000cm⁻³	GaN	Circular GaN Schottky barrier diode fabricated on a GaN ammo	—
Trap Energy Level	Poole-Frenkel emission trap energy	0.75eV	GaN	Circular GaN Schottky barrier diode fabricated on a GaN ammo	—
Trap Energy Level	trap-assisted tunneling trap energy	0.3eV	GaN	Circular GaN Schottky barrier diode fabricated on a sapphire	—
Trap Energy Level	Poole-Frenkel emission trap energy	0.9eV	GaN	Circular GaN Schottky barrier diode fabricated on a sapphire	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Carrier Concentration	ND	19000000000000000cm⁻³	GaN	Circular GaN Schottky barrier diode fabricated on a sapphire	—
Fet Carrier Concentration	ND	110000000000000000cm⁻³	GaN	Circular GaN Schottky barrier diode fabricated on a GaN ammo	—
Trap Energy Level	Poole-Frenkel emission trap energy	0.75eV	GaN	Circular GaN Schottky barrier diode fabricated on a GaN ammo	—
Trap Energy Level	trap-assisted tunneling trap energy	0.3eV	GaN	Circular GaN Schottky barrier diode fabricated on a sapphire	—
Trap Energy Level	Poole-Frenkel emission trap energy	0.9eV	GaN	Circular GaN Schottky barrier diode fabricated on a sapphire	—

Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates

Samples

Circular GaN Schottky barrier diode fabricated on a sapphire substrate; measurements performed on a 140 um diameter diode.

Circular GaN Schottky barrier diode fabricated on a GaN ammonothermal substrate; measurements performed on a 140 um diameter diode.

Materials

Why these are connected

Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates

Samples

Circular GaN Schottky barrier diode fabricated on a sapphire substrate; measurements performed on a 140 um diameter diode.

Circular GaN Schottky barrier diode fabricated on a GaN ammonothermal substrate; measurements performed on a 140 um diameter diode.

Materials

Why these are connected

Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates

Samples

Circular GaN Schottky barrier diode fabricated on a sapphire substrate; measurements performed on a 140 um diameter diode.

Circular GaN Schottky barrier diode fabricated on a GaN ammonothermal substrate; measurements performed on a 140 um diameter diode.

Materials

Why these are connected

Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates

Samples

Circular GaN Schottky barrier diode fabricated on a sapphire substrate; measurements performed on a 140 um diameter diode.

Circular GaN Schottky barrier diode fabricated on a GaN ammonothermal substrate; measurements performed on a 140 um diameter diode.

Materials

Why these are connected

Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates

Samples

Circular GaN Schottky barrier diode fabricated on a sapphire substrate; measurements performed on a 140 um diameter diode.

Circular GaN Schottky barrier diode fabricated on a GaN ammonothermal substrate; measurements performed on a 140 um diameter diode.

Materials

Why these are connected

Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates

Samples

Circular GaN Schottky barrier diode fabricated on a sapphire substrate; measurements performed on a 140 um diameter diode.

Circular GaN Schottky barrier diode fabricated on a GaN ammonothermal substrate; measurements performed on a 140 um diameter diode.

Materials

Why these are connected

Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates

Samples

Circular GaN Schottky barrier diode fabricated on a sapphire substrate; measurements performed on a 140 um diameter diode.

Circular GaN Schottky barrier diode fabricated on a GaN ammonothermal substrate; measurements performed on a 140 um diameter diode.

Materials

Why these are connected

Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates

Samples

Circular GaN Schottky barrier diode fabricated on a sapphire substrate; measurements performed on a 140 um diameter diode.

Circular GaN Schottky barrier diode fabricated on a GaN ammonothermal substrate; measurements performed on a 140 um diameter diode.

Materials

Why these are connected

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations