Research paper
Experimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations3 characterizations7 properties2 figures
Related documents with shared materials, methods, properties, or citations.
Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas
Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits
Thin-film Al0.30Ga0.70As (111) as a ‘flat’ source of high-purity orthogonally polarized entangled photons
Lateral 2D superlattices in GaAs heterostructures with independent control of carrier density and modulation potential
Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)
Expanding the Quantum Photonic Toolbox in AlGaAsOI
Two-dimensional optomechanical crystal resonator in gallium arsenide
Statistical evaluation of 571 GaAs quantum point contact transistors showing the 0.7 anomaly in quantized conductance using millikelvin cryogenic on-chip multiplexing
Curved GaAs cantilever waveguides for the vertical coupling to photonic integrated circuits
Compact self-matched gyrators using edge magnetoplasmons
Transverse Magnetic Mode Laser in Photonic Crystal Nanobeam Cavity
Quantum-Ready Microwave Detection with Scalable Graphene Bolometers in the Strong Localization Regime
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations3 characterizations7 properties2 figures
Related documents with shared materials, methods, properties, or citations.
Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas
Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits
Thin-film Al0.30Ga0.70As (111) as a ‘flat’ source of high-purity orthogonally polarized entangled photons
Lateral 2D superlattices in GaAs heterostructures with independent control of carrier density and modulation potential
Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)
Expanding the Quantum Photonic Toolbox in AlGaAsOI
Two-dimensional optomechanical crystal resonator in gallium arsenide
Statistical evaluation of 571 GaAs quantum point contact transistors showing the 0.7 anomaly in quantized conductance using millikelvin cryogenic on-chip multiplexing
Curved GaAs cantilever waveguides for the vertical coupling to photonic integrated circuits
Compact self-matched gyrators using edge magnetoplasmons
Transverse Magnetic Mode Laser in Photonic Crystal Nanobeam Cavity
Quantum-Ready Microwave Detection with Scalable Graphene Bolometers in the Strong Localization Regime
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations3 characterizations7 properties2 figures
Related documents with shared materials, methods, properties, or citations.
Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas
Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits
Thin-film Al0.30Ga0.70As (111) as a ‘flat’ source of high-purity orthogonally polarized entangled photons
Lateral 2D superlattices in GaAs heterostructures with independent control of carrier density and modulation potential
Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)
Expanding the Quantum Photonic Toolbox in AlGaAsOI
Two-dimensional optomechanical crystal resonator in gallium arsenide
Statistical evaluation of 571 GaAs quantum point contact transistors showing the 0.7 anomaly in quantized conductance using millikelvin cryogenic on-chip multiplexing
Curved GaAs cantilever waveguides for the vertical coupling to photonic integrated circuits
Compact self-matched gyrators using edge magnetoplasmons
Transverse Magnetic Mode Laser in Photonic Crystal Nanobeam Cavity
Quantum-Ready Microwave Detection with Scalable Graphene Bolometers in the Strong Localization Regime
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations3 characterizations7 properties2 figures
Related documents with shared materials, methods, properties, or citations.
Optimization of submicron Ni/Au/Ge contacts to an AlGaAs/GaAs two-dimensional electron gas
Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits
Thin-film Al0.30Ga0.70As (111) as a ‘flat’ source of high-purity orthogonally polarized entangled photons
Lateral 2D superlattices in GaAs heterostructures with independent control of carrier density and modulation potential
Demonstration of a Field-Effect Three-Terminal Electronic Device with an Electron Mobility Exceeding 40 Million cm2/(Vs)
Expanding the Quantum Photonic Toolbox in AlGaAsOI
Two-dimensional optomechanical crystal resonator in gallium arsenide
Statistical evaluation of 571 GaAs quantum point contact transistors showing the 0.7 anomaly in quantized conductance using millikelvin cryogenic on-chip multiplexing
Curved GaAs cantilever waveguides for the vertical coupling to photonic integrated circuits
Compact self-matched gyrators using edge magnetoplasmons
Transverse Magnetic Mode Laser in Photonic Crystal Nanobeam Cavity
Quantum-Ready Microwave Detection with Scalable Graphene Bolometers in the Strong Localization Regime