Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
InP-NB photonic crystal nanobeam cavity fabricated on an InP/InGaAsP-QW wafer with the InGaAs sacrificial layer removed and the QW layer lightly etched for sensing/lasing study.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
InP-NB photonic crystal nanobeam cavity fabricated on an InP/InGaAsP-QW wafer with the InGaAs sacrificial layer removed and the QW layer lightly etched for sensing/lasing study.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
InP-NB photonic crystal nanobeam cavity fabricated on an InP/InGaAsP-QW wafer with the InGaAs sacrificial layer removed and the QW layer lightly etched for sensing/lasing study.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
InP-NB photonic crystal nanobeam cavity fabricated on an InP/InGaAsP-QW wafer with the InGaAs sacrificial layer removed and the QW layer lightly etched for sensing/lasing study.