Research paperExperimental CharacterizationComputational MultiscaleMultimode Nanobeam Photonic Crystal Cavities for Purcell Enhanced Quantum Dot EmissionJunyeob Song, Ashish Chanana, Emerson G. Melo, William Eshbaugh et al.arXiv preprint·2025·10.48550/arxiv.2507.14090·arXiv:2507.14090AbstractEpitaxial III-V semiconductor quantum dots in nanophotonic structures are promising candidates for on-demand indistinguishable single-photon emission in integrated quantum photonic circuits. The paper designs and demonstrates GaAs photonic crystal nanobeam cavities that keep quantum dots more than 300 nm from etched sidewalls to avoid spectral broadening while achieving multimode resonances with quality factors in the 10³ range and potential Purcell radiative rate enhancements near 100.Read more
Epitaxially grown GaAs photonic crystal multimode nanobeam cavity device containing embedded InAs quantum dots on a sacrificial AlGaAs layer.4 preparations2 characterizations3 properties1 figureExperimentalGaAsStudied MaterialInAsStudied MaterialAlGaAsSubstrate / DielectricExpand
Representative GaAs multimode nanobeam photonic crystal cavity used for finite-difference time-domain and finite-element optical simulations.9 propertiesSimulatedGaAsStudied MaterialExpand
Research paperExperimental CharacterizationComputational MultiscaleMultimode Nanobeam Photonic Crystal Cavities for Purcell Enhanced Quantum Dot EmissionJunyeob Song, Ashish Chanana, Emerson G. Melo, William Eshbaugh et al.arXiv preprint·2025·10.48550/arxiv.2507.14090·arXiv:2507.14090AbstractEpitaxial III-V semiconductor quantum dots in nanophotonic structures are promising candidates for on-demand indistinguishable single-photon emission in integrated quantum photonic circuits. The paper designs and demonstrates GaAs photonic crystal nanobeam cavities that keep quantum dots more than 300 nm from etched sidewalls to avoid spectral broadening while achieving multimode resonances with quality factors in the 10³ range and potential Purcell radiative rate enhancements near 100.Read more
Epitaxially grown GaAs photonic crystal multimode nanobeam cavity device containing embedded InAs quantum dots on a sacrificial AlGaAs layer.4 preparations2 characterizations3 properties1 figureExperimentalGaAsStudied MaterialInAsStudied MaterialAlGaAsSubstrate / DielectricExpand
Representative GaAs multimode nanobeam photonic crystal cavity used for finite-difference time-domain and finite-element optical simulations.9 propertiesSimulatedGaAsStudied MaterialExpand
Research paperExperimental CharacterizationComputational MultiscaleMultimode Nanobeam Photonic Crystal Cavities for Purcell Enhanced Quantum Dot EmissionJunyeob Song, Ashish Chanana, Emerson G. Melo, William Eshbaugh et al.arXiv preprint·2025·10.48550/arxiv.2507.14090·arXiv:2507.14090AbstractEpitaxial III-V semiconductor quantum dots in nanophotonic structures are promising candidates for on-demand indistinguishable single-photon emission in integrated quantum photonic circuits. The paper designs and demonstrates GaAs photonic crystal nanobeam cavities that keep quantum dots more than 300 nm from etched sidewalls to avoid spectral broadening while achieving multimode resonances with quality factors in the 10³ range and potential Purcell radiative rate enhancements near 100.Read more
Epitaxially grown GaAs photonic crystal multimode nanobeam cavity device containing embedded InAs quantum dots on a sacrificial AlGaAs layer.4 preparations2 characterizations3 properties1 figureExperimentalGaAsStudied MaterialInAsStudied MaterialAlGaAsSubstrate / DielectricExpand
Representative GaAs multimode nanobeam photonic crystal cavity used for finite-difference time-domain and finite-element optical simulations.9 propertiesSimulatedGaAsStudied MaterialExpand
Research paperExperimental CharacterizationComputational MultiscaleMultimode Nanobeam Photonic Crystal Cavities for Purcell Enhanced Quantum Dot EmissionJunyeob Song, Ashish Chanana, Emerson G. Melo, William Eshbaugh et al.arXiv preprint·2025·10.48550/arxiv.2507.14090·arXiv:2507.14090AbstractEpitaxial III-V semiconductor quantum dots in nanophotonic structures are promising candidates for on-demand indistinguishable single-photon emission in integrated quantum photonic circuits. The paper designs and demonstrates GaAs photonic crystal nanobeam cavities that keep quantum dots more than 300 nm from etched sidewalls to avoid spectral broadening while achieving multimode resonances with quality factors in the 10³ range and potential Purcell radiative rate enhancements near 100.Read more
Epitaxially grown GaAs photonic crystal multimode nanobeam cavity device containing embedded InAs quantum dots on a sacrificial AlGaAs layer.4 preparations2 characterizations3 properties1 figureExperimentalGaAsStudied MaterialInAsStudied MaterialAlGaAsSubstrate / DielectricExpand
Representative GaAs multimode nanobeam photonic crystal cavity used for finite-difference time-domain and finite-element optical simulations.9 propertiesSimulatedGaAsStudied MaterialExpand