Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Epitaxial wafer stack on 3-inch GaAs substrate containing InGaP active layer and InGaAlP cladding layers; precursor structure used to fabricate nanodisks.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Epitaxial wafer stack on 3-inch GaAs substrate containing InGaP active layer and InGaAlP cladding layers; precursor structure used to fabricate nanodisks.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Epitaxial wafer stack on 3-inch GaAs substrate containing InGaP active layer and InGaAlP cladding layers; precursor structure used to fabricate nanodisks.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Epitaxial wafer stack on 3-inch GaAs substrate containing InGaP active layer and InGaAlP cladding layers; precursor structure used to fabricate nanodisks.
