Ultrasmall InGa(As)P dielectric and plasmonic nanolasers

Debarghya Sarkar; Sangyeon Cho; Hao Yan; Nicola Martino; Paul H. Dannenberg; Seok-Hyun Yun

doi:10.1021/acsnano.3c04721

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputed Raman

Ultrasmall InGa(As)P dielectric and plasmonic nanolasers

Debarghya Sarkar, Sangyeon Cho, Hao Yan, Nicola Martino et al.

2022·10.1021/acsnano.3c04721·arXiv:2212.13301

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Epitaxial wafer stack on 3-inch GaAs substrate containing InGaP active layer and InGaAlP cladding layers; precursor structure used to fabricate nanodisks.

6 preparations1 characterization3 figures

ExperimentalInGaPStudied MaterialInGaAlPStudied MaterialGaAsSubstrate / Dielectric

Representative 460 nm diameter InGaP disk on a GaAs pillar.

4 characterizations9 properties3 figures

ExperimentalInGaPStudied MaterialGaAsSubstrate / Dielectric

InGaP nanodisk placed on gold substrate for plasmonic lasing.

4 characterizations7 properties3 figures

ExperimentalInGaPStudied MaterialAuCapping Or Contact

Detached InGaP nanodisk placed on glass substrate.

2 characterizations2 properties3 figures

ExperimentalInGaPStudied MaterialSiO₂Substrate / Dielectric

Intact full wafer stack sample used for time-resolved photoluminescence comparison.

6 preparations1 characterization1 property1 figure

ExperimentalInGaPStudied MaterialGaAsSubstrate / Dielectric

Materials

InGaP

Studied Material

Also known as

InGa(As)PInGaP semiconductor

studied material

InGaAlP

Studied Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Ultrasmall InGa(As)P dielectric and plasmonic nanolasers | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Sample Diameter	disk diameter	460nm	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Sample Diameter	disk diameter	360nm	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
Sample Diameter	pillar diameter	120nm	GaAs	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Lasing Threshold	threshold pump fluence	1mJ/cm2	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Lasing Threshold	threshold pump fluence	0.9mJ/cm2	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
Lasing Threshold	threshold pump fluence	1.5mJ/cm2	InGaP	Detached InGaP nanodisk placed on glass substrate.		—
Emission Wavelength	laser emission peak	660nm	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Linewidth	post-lasing linewidth	0.15-0.2nm	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Linewidth	post-threshold linewidth	1.5nm	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
Spontaneous Emission Factor	beta	0.01	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Lifetime	bulk semiconductor decay lifetime	1840ps	InGaP	Intact full wafer stack sample used for time-resolved photol		—
Lifetime	disk-on-pillar decay lifetime	623ps	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Lifetime	slow decay lifetime	410ps	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
Lifetime	fast decay lifetime	<35ps	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
Quality Factor	simulated whispering-gallery mode Q	430	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Quality Factor	simulated plasmonic mode Q	30	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
Quality Factor	simulated dielectric mode Q	20	InGaP	Detached InGaP nanodisk placed on glass substrate.		—
Purcell Factor	dielectric mode Purcell factor	2.3	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Purcell Factor	plasmonic mode Purcell factor	19	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
PL Peak	regex-detected PL peak	706nm	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Sample Diameter	disk diameter	460nm	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Sample Diameter	disk diameter	360nm	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
Sample Diameter	pillar diameter	120nm	GaAs	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Lasing Threshold	threshold pump fluence	1mJ/cm2	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Lasing Threshold	threshold pump fluence	0.9mJ/cm2	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
Lasing Threshold	threshold pump fluence	1.5mJ/cm2	InGaP	Detached InGaP nanodisk placed on glass substrate.		—
Emission Wavelength	laser emission peak	660nm	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Linewidth	post-lasing linewidth	0.15-0.2nm	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Linewidth	post-threshold linewidth	1.5nm	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
Spontaneous Emission Factor	beta	0.01	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Lifetime	bulk semiconductor decay lifetime	1840ps	InGaP	Intact full wafer stack sample used for time-resolved photol		—
Lifetime	disk-on-pillar decay lifetime	623ps	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Lifetime	slow decay lifetime	410ps	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
Lifetime	fast decay lifetime	<35ps	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
Quality Factor	simulated whispering-gallery mode Q	430	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Quality Factor	simulated plasmonic mode Q	30	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
Quality Factor	simulated dielectric mode Q	20	InGaP	Detached InGaP nanodisk placed on glass substrate.		—
Purcell Factor	dielectric mode Purcell factor	2.3	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Purcell Factor	plasmonic mode Purcell factor	19	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
PL Peak	regex-detected PL peak	706nm	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Sample Diameter	disk diameter	460nm	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Sample Diameter	disk diameter	360nm	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
Sample Diameter	pillar diameter	120nm	GaAs	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Lasing Threshold	threshold pump fluence	1mJ/cm2	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Lasing Threshold	threshold pump fluence	0.9mJ/cm2	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
Lasing Threshold	threshold pump fluence	1.5mJ/cm2	InGaP	Detached InGaP nanodisk placed on glass substrate.		—
Emission Wavelength	laser emission peak	660nm	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Linewidth	post-lasing linewidth	0.15-0.2nm	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Linewidth	post-threshold linewidth	1.5nm	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
Spontaneous Emission Factor	beta	0.01	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Lifetime	bulk semiconductor decay lifetime	1840ps	InGaP	Intact full wafer stack sample used for time-resolved photol		—
Lifetime	disk-on-pillar decay lifetime	623ps	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Lifetime	slow decay lifetime	410ps	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
Lifetime	fast decay lifetime	<35ps	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
Quality Factor	simulated whispering-gallery mode Q	430	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Quality Factor	simulated plasmonic mode Q	30	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
Quality Factor	simulated dielectric mode Q	20	InGaP	Detached InGaP nanodisk placed on glass substrate.		—
Purcell Factor	dielectric mode Purcell factor	2.3	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Purcell Factor	plasmonic mode Purcell factor	19	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
PL Peak	regex-detected PL peak	706nm	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Sample Diameter	disk diameter	460nm	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Sample Diameter	disk diameter	360nm	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
Sample Diameter	pillar diameter	120nm	GaAs	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Lasing Threshold	threshold pump fluence	1mJ/cm2	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Lasing Threshold	threshold pump fluence	0.9mJ/cm2	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
Lasing Threshold	threshold pump fluence	1.5mJ/cm2	InGaP	Detached InGaP nanodisk placed on glass substrate.		—
Emission Wavelength	laser emission peak	660nm	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Linewidth	post-lasing linewidth	0.15-0.2nm	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Linewidth	post-threshold linewidth	1.5nm	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
Spontaneous Emission Factor	beta	0.01	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Lifetime	bulk semiconductor decay lifetime	1840ps	InGaP	Intact full wafer stack sample used for time-resolved photol		—
Lifetime	disk-on-pillar decay lifetime	623ps	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Lifetime	slow decay lifetime	410ps	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
Lifetime	fast decay lifetime	<35ps	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
Quality Factor	simulated whispering-gallery mode Q	430	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Quality Factor	simulated plasmonic mode Q	30	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
Quality Factor	simulated dielectric mode Q	20	InGaP	Detached InGaP nanodisk placed on glass substrate.		—
Purcell Factor	dielectric mode Purcell factor	2.3	InGaP	Representative 460 nm diameter InGaP disk on a GaAs pillar.		—
Purcell Factor	plasmonic mode Purcell factor	19	InGaP	InGaP nanodisk placed on gold substrate for plasmonic lasing		—
PL Peak	regex-detected PL peak	706nm	—	—	—	—

Ultrasmall InGa(As)P dielectric and plasmonic nanolasers

Samples

Epitaxial wafer stack on 3-inch GaAs substrate containing InGaP active layer and InGaAlP cladding layers; precursor structure used to fabricate nanodisks.

Representative 460 nm diameter InGaP disk on a GaAs pillar.

InGaP nanodisk placed on gold substrate for plasmonic lasing.

Detached InGaP nanodisk placed on glass substrate.

Intact full wafer stack sample used for time-resolved photoluminescence comparison.

Materials

Why these are connected

Ultrasmall InGa(As)P dielectric and plasmonic nanolasers

Samples

Epitaxial wafer stack on 3-inch GaAs substrate containing InGaP active layer and InGaAlP cladding layers; precursor structure used to fabricate nanodisks.

Representative 460 nm diameter InGaP disk on a GaAs pillar.

InGaP nanodisk placed on gold substrate for plasmonic lasing.

Detached InGaP nanodisk placed on glass substrate.

Intact full wafer stack sample used for time-resolved photoluminescence comparison.

Materials

Why these are connected

Ultrasmall InGa(As)P dielectric and plasmonic nanolasers

Samples

Epitaxial wafer stack on 3-inch GaAs substrate containing InGaP active layer and InGaAlP cladding layers; precursor structure used to fabricate nanodisks.

Representative 460 nm diameter InGaP disk on a GaAs pillar.

InGaP nanodisk placed on gold substrate for plasmonic lasing.

Detached InGaP nanodisk placed on glass substrate.

Intact full wafer stack sample used for time-resolved photoluminescence comparison.

Materials

Why these are connected

Ultrasmall InGa(As)P dielectric and plasmonic nanolasers

Samples

Epitaxial wafer stack on 3-inch GaAs substrate containing InGaP active layer and InGaAlP cladding layers; precursor structure used to fabricate nanodisks.

Representative 460 nm diameter InGaP disk on a GaAs pillar.

InGaP nanodisk placed on gold substrate for plasmonic lasing.

Detached InGaP nanodisk placed on glass substrate.

Intact full wafer stack sample used for time-resolved photoluminescence comparison.

Materials

Why these are connected

Ultrasmall InGa(As)P dielectric and plasmonic nanolasers

Samples

Epitaxial wafer stack on 3-inch GaAs substrate containing InGaP active layer and InGaAlP cladding layers; precursor structure used to fabricate nanodisks.

Representative 460 nm diameter InGaP disk on a GaAs pillar.

InGaP nanodisk placed on gold substrate for plasmonic lasing.

Detached InGaP nanodisk placed on glass substrate.

Intact full wafer stack sample used for time-resolved photoluminescence comparison.

Materials

Why these are connected

Ultrasmall InGa(As)P dielectric and plasmonic nanolasers

Samples

Epitaxial wafer stack on 3-inch GaAs substrate containing InGaP active layer and InGaAlP cladding layers; precursor structure used to fabricate nanodisks.

Representative 460 nm diameter InGaP disk on a GaAs pillar.

InGaP nanodisk placed on gold substrate for plasmonic lasing.

Detached InGaP nanodisk placed on glass substrate.

Intact full wafer stack sample used for time-resolved photoluminescence comparison.

Materials

Why these are connected

Ultrasmall InGa(As)P dielectric and plasmonic nanolasers

Samples

Epitaxial wafer stack on 3-inch GaAs substrate containing InGaP active layer and InGaAlP cladding layers; precursor structure used to fabricate nanodisks.

Representative 460 nm diameter InGaP disk on a GaAs pillar.

InGaP nanodisk placed on gold substrate for plasmonic lasing.

Detached InGaP nanodisk placed on glass substrate.

Intact full wafer stack sample used for time-resolved photoluminescence comparison.

Materials

Why these are connected

Ultrasmall InGa(As)P dielectric and plasmonic nanolasers

Samples

Epitaxial wafer stack on 3-inch GaAs substrate containing InGaP active layer and InGaAlP cladding layers; precursor structure used to fabricate nanodisks.

Representative 460 nm diameter InGaP disk on a GaAs pillar.

InGaP nanodisk placed on gold substrate for plasmonic lasing.

Detached InGaP nanodisk placed on glass substrate.

Intact full wafer stack sample used for time-resolved photoluminescence comparison.

Materials

Why these are connected

Growth

Processing

Characterization

Properties

Simulations

Growth

Processing

Characterization