Patent
US 11,574,839METHOD FOR TRANSFERRING COMPOUND SEMICONDUCTOR SINGLE CRYSTAL THIN FILM LAYER AND METHOD FOR PREPARING SINGLE CRYSTAL GaAs-OI COMPOSITE WAFER
ZHIYONG WANG
US
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Patent
Atlas literature
Patent
US 11,574,839Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart of a method for transferring a compound semiconductor single crystal thin film layer disclosed in an embodiment of the present disclosure;
FIG. 2 is a flowchart illustrating structure and preparation of an A wafer disclosed in an embodiment of the present disclosure;
FIG. 3 is a flowchart illustrating structure and preparation of a first B wafer disclosed in an embodiment of the present disclosure;
FIG. 4 is a flowchart illustrating structure and preparation of a second B wafer disclosed in an embodiment of the present disclosure;
FIG. 5 is a flowchart illustrating structure and preparation of a first single crystal GaAs-OI composite wafer disclosed in an embodiment of the present …
FIG. 6 is a flowchart illustrating structure and preparation of a second single crystal GaAs- 01 composite wafer disclosed in an embodiment of the present …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for transferring a compound semiconductor single crystal thin film layer, comprising: preparing a graphite transition layer on a first substrate; growing the compound semiconductor single crystal thin film layer on the graphite transition layer, wherein the compound semiconductor single crystal thin film layer has the same lattice structure as the first substrate; preparing a first dielectric layer on the compound semiconductor single crystal thin film layer; preparing a second dielectric layer on a second substrate; combining the first substrate and the second substrate by bonding the first dielectric layer and the second dielectric layer; and applying a lateral external pressure, such that the compound semiconductor single crystal thin film layer and the first substrate are transversely split at the graphite transition layer, and the compound semiconductor single crystal thin film layer is transferred to the second substrate, wherein each of the first dielectric layer and the second dielectric layer is an Si 3 N 4 layer, and the second dielectric layer serves as a buried insulating layer of the second substrate, wherein an SiO 2 layer is further provided between the second substrate and the Si 3 N 4 dielectric layer. Previously presented
The method for transferring a compound semiconductor single crystal thin film layer of claim 1, wherein the first substrate is a single crystal GaAs substrate or a single crystal Ge substrate. Original
) The method for transferring a compound semiconductor single crystal thin film layer of claim 1, wherein the second substrate is an Si substrate. Previously presented
A method for preparing a single crystal GaAs- OI composite wafer based on the method for transferring a compound semiconductor single crystal thin film layer according to claim 1, comprising: preparing an A wafer, comprising: preparing a graphite transition layer on a single crystal GaAs substrate or a single crystal Ge substrate; epitaxially growing a GaAs single crystal thin film layer on the graphite transition layer; and preparing a Si 3 N 4 dielectric layer on the GaAs single crystal thin film layer; preparing a B wafer, comprising: preparing a SiO 2 layer on a surface of the Si substrate; and preparing a Si 3 N 4 dielectric layer on a surface of the SiO 2 layer as a buried insulating layer; and 2 4 N 4 preparing the single crystal GaAs- OI composite wafer, comprising: bonding the Si 3 N 4 layer on a top layer of the A wafer and the Si 3 N 4 layer on a top layer of the B wafer, such that the A wafer and the B wafer are closely combined; and applying a lateral external pressure onto the A wafer, such that the composite wafer is split transversely at the graphite transition layer, removing the single crystal GaAs substrate or the single crystal Ge substrate, and removing the graphite transition layer, thus the single crystal GaAs- OI composite wafer, which has a structure of a Si substrate, a SiO 2 layer, a Si 3 N 4 dielectric layer and a GaAs single crystal thin film layer arranged in sequence, is obtained. Currently amended
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
single crystal GaAs-OI composite wafer
Materials described outside the worked examples.
graphite transition layer
C
Si₃N₄ dielectric layer
Si₃N₄
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–100 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,574,839Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart of a method for transferring a compound semiconductor single crystal thin film layer disclosed in an embodiment of the present disclosure;
FIG. 2 is a flowchart illustrating structure and preparation of an A wafer disclosed in an embodiment of the present disclosure;
FIG. 3 is a flowchart illustrating structure and preparation of a first B wafer disclosed in an embodiment of the present disclosure;
FIG. 4 is a flowchart illustrating structure and preparation of a second B wafer disclosed in an embodiment of the present disclosure;
FIG. 5 is a flowchart illustrating structure and preparation of a first single crystal GaAs-OI composite wafer disclosed in an embodiment of the present …
FIG. 6 is a flowchart illustrating structure and preparation of a second single crystal GaAs- 01 composite wafer disclosed in an embodiment of the present …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for transferring a compound semiconductor single crystal thin film layer, comprising: preparing a graphite transition layer on a first substrate; growing the compound semiconductor single crystal thin film layer on the graphite transition layer, wherein the compound semiconductor single crystal thin film layer has the same lattice structure as the first substrate; preparing a first dielectric layer on the compound semiconductor single crystal thin film layer; preparing a second dielectric layer on a second substrate; combining the first substrate and the second substrate by bonding the first dielectric layer and the second dielectric layer; and applying a lateral external pressure, such that the compound semiconductor single crystal thin film layer and the first substrate are transversely split at the graphite transition layer, and the compound semiconductor single crystal thin film layer is transferred to the second substrate, wherein each of the first dielectric layer and the second dielectric layer is an Si 3 N 4 layer, and the second dielectric layer serves as a buried insulating layer of the second substrate, wherein an SiO 2 layer is further provided between the second substrate and the Si 3 N 4 dielectric layer. Previously presented
The method for transferring a compound semiconductor single crystal thin film layer of claim 1, wherein the first substrate is a single crystal GaAs substrate or a single crystal Ge substrate. Original
) The method for transferring a compound semiconductor single crystal thin film layer of claim 1, wherein the second substrate is an Si substrate. Previously presented
A method for preparing a single crystal GaAs- OI composite wafer based on the method for transferring a compound semiconductor single crystal thin film layer according to claim 1, comprising: preparing an A wafer, comprising: preparing a graphite transition layer on a single crystal GaAs substrate or a single crystal Ge substrate; epitaxially growing a GaAs single crystal thin film layer on the graphite transition layer; and preparing a Si 3 N 4 dielectric layer on the GaAs single crystal thin film layer; preparing a B wafer, comprising: preparing a SiO 2 layer on a surface of the Si substrate; and preparing a Si 3 N 4 dielectric layer on a surface of the SiO 2 layer as a buried insulating layer; and 2 4 N 4 preparing the single crystal GaAs- OI composite wafer, comprising: bonding the Si 3 N 4 layer on a top layer of the A wafer and the Si 3 N 4 layer on a top layer of the B wafer, such that the A wafer and the B wafer are closely combined; and applying a lateral external pressure onto the A wafer, such that the composite wafer is split transversely at the graphite transition layer, removing the single crystal GaAs substrate or the single crystal Ge substrate, and removing the graphite transition layer, thus the single crystal GaAs- OI composite wafer, which has a structure of a Si substrate, a SiO 2 layer, a Si 3 N 4 dielectric layer and a GaAs single crystal thin film layer arranged in sequence, is obtained. Currently amended
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
single crystal GaAs-OI composite wafer
Materials described outside the worked examples.
graphite transition layer
C
Si₃N₄ dielectric layer
Si₃N₄
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–100 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,574,839Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart of a method for transferring a compound semiconductor single crystal thin film layer disclosed in an embodiment of the present disclosure;
FIG. 2 is a flowchart illustrating structure and preparation of an A wafer disclosed in an embodiment of the present disclosure;
FIG. 3 is a flowchart illustrating structure and preparation of a first B wafer disclosed in an embodiment of the present disclosure;
FIG. 4 is a flowchart illustrating structure and preparation of a second B wafer disclosed in an embodiment of the present disclosure;
FIG. 5 is a flowchart illustrating structure and preparation of a first single crystal GaAs-OI composite wafer disclosed in an embodiment of the present …
FIG. 6 is a flowchart illustrating structure and preparation of a second single crystal GaAs- 01 composite wafer disclosed in an embodiment of the present …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for transferring a compound semiconductor single crystal thin film layer, comprising: preparing a graphite transition layer on a first substrate; growing the compound semiconductor single crystal thin film layer on the graphite transition layer, wherein the compound semiconductor single crystal thin film layer has the same lattice structure as the first substrate; preparing a first dielectric layer on the compound semiconductor single crystal thin film layer; preparing a second dielectric layer on a second substrate; combining the first substrate and the second substrate by bonding the first dielectric layer and the second dielectric layer; and applying a lateral external pressure, such that the compound semiconductor single crystal thin film layer and the first substrate are transversely split at the graphite transition layer, and the compound semiconductor single crystal thin film layer is transferred to the second substrate, wherein each of the first dielectric layer and the second dielectric layer is an Si 3 N 4 layer, and the second dielectric layer serves as a buried insulating layer of the second substrate, wherein an SiO 2 layer is further provided between the second substrate and the Si 3 N 4 dielectric layer. Previously presented
The method for transferring a compound semiconductor single crystal thin film layer of claim 1, wherein the first substrate is a single crystal GaAs substrate or a single crystal Ge substrate. Original
) The method for transferring a compound semiconductor single crystal thin film layer of claim 1, wherein the second substrate is an Si substrate. Previously presented
A method for preparing a single crystal GaAs- OI composite wafer based on the method for transferring a compound semiconductor single crystal thin film layer according to claim 1, comprising: preparing an A wafer, comprising: preparing a graphite transition layer on a single crystal GaAs substrate or a single crystal Ge substrate; epitaxially growing a GaAs single crystal thin film layer on the graphite transition layer; and preparing a Si 3 N 4 dielectric layer on the GaAs single crystal thin film layer; preparing a B wafer, comprising: preparing a SiO 2 layer on a surface of the Si substrate; and preparing a Si 3 N 4 dielectric layer on a surface of the SiO 2 layer as a buried insulating layer; and 2 4 N 4 preparing the single crystal GaAs- OI composite wafer, comprising: bonding the Si 3 N 4 layer on a top layer of the A wafer and the Si 3 N 4 layer on a top layer of the B wafer, such that the A wafer and the B wafer are closely combined; and applying a lateral external pressure onto the A wafer, such that the composite wafer is split transversely at the graphite transition layer, removing the single crystal GaAs substrate or the single crystal Ge substrate, and removing the graphite transition layer, thus the single crystal GaAs- OI composite wafer, which has a structure of a Si substrate, a SiO 2 layer, a Si 3 N 4 dielectric layer and a GaAs single crystal thin film layer arranged in sequence, is obtained. Currently amended
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
single crystal GaAs-OI composite wafer
Materials described outside the worked examples.
graphite transition layer
C
Si₃N₄ dielectric layer
Si₃N₄
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–100 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,574,839Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart of a method for transferring a compound semiconductor single crystal thin film layer disclosed in an embodiment of the present disclosure;
FIG. 2 is a flowchart illustrating structure and preparation of an A wafer disclosed in an embodiment of the present disclosure;
FIG. 3 is a flowchart illustrating structure and preparation of a first B wafer disclosed in an embodiment of the present disclosure;
FIG. 4 is a flowchart illustrating structure and preparation of a second B wafer disclosed in an embodiment of the present disclosure;
FIG. 5 is a flowchart illustrating structure and preparation of a first single crystal GaAs-OI composite wafer disclosed in an embodiment of the present …
FIG. 6 is a flowchart illustrating structure and preparation of a second single crystal GaAs- 01 composite wafer disclosed in an embodiment of the present …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for transferring a compound semiconductor single crystal thin film layer, comprising: preparing a graphite transition layer on a first substrate; growing the compound semiconductor single crystal thin film layer on the graphite transition layer, wherein the compound semiconductor single crystal thin film layer has the same lattice structure as the first substrate; preparing a first dielectric layer on the compound semiconductor single crystal thin film layer; preparing a second dielectric layer on a second substrate; combining the first substrate and the second substrate by bonding the first dielectric layer and the second dielectric layer; and applying a lateral external pressure, such that the compound semiconductor single crystal thin film layer and the first substrate are transversely split at the graphite transition layer, and the compound semiconductor single crystal thin film layer is transferred to the second substrate, wherein each of the first dielectric layer and the second dielectric layer is an Si 3 N 4 layer, and the second dielectric layer serves as a buried insulating layer of the second substrate, wherein an SiO 2 layer is further provided between the second substrate and the Si 3 N 4 dielectric layer. Previously presented
The method for transferring a compound semiconductor single crystal thin film layer of claim 1, wherein the first substrate is a single crystal GaAs substrate or a single crystal Ge substrate. Original
) The method for transferring a compound semiconductor single crystal thin film layer of claim 1, wherein the second substrate is an Si substrate. Previously presented
A method for preparing a single crystal GaAs- OI composite wafer based on the method for transferring a compound semiconductor single crystal thin film layer according to claim 1, comprising: preparing an A wafer, comprising: preparing a graphite transition layer on a single crystal GaAs substrate or a single crystal Ge substrate; epitaxially growing a GaAs single crystal thin film layer on the graphite transition layer; and preparing a Si 3 N 4 dielectric layer on the GaAs single crystal thin film layer; preparing a B wafer, comprising: preparing a SiO 2 layer on a surface of the Si substrate; and preparing a Si 3 N 4 dielectric layer on a surface of the SiO 2 layer as a buried insulating layer; and 2 4 N 4 preparing the single crystal GaAs- OI composite wafer, comprising: bonding the Si 3 N 4 layer on a top layer of the A wafer and the Si 3 N 4 layer on a top layer of the B wafer, such that the A wafer and the B wafer are closely combined; and applying a lateral external pressure onto the A wafer, such that the composite wafer is split transversely at the graphite transition layer, removing the single crystal GaAs substrate or the single crystal Ge substrate, and removing the graphite transition layer, thus the single crystal GaAs- OI composite wafer, which has a structure of a Si substrate, a SiO 2 layer, a Si 3 N 4 dielectric layer and a GaAs single crystal thin film layer arranged in sequence, is obtained. Currently amended
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
single crystal GaAs-OI composite wafer
Materials described outside the worked examples.
graphite transition layer
C
Si₃N₄ dielectric layer
Si₃N₄
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 50–100 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
SiO₂ layer
SiO₂
single crystal GaAs substrate
GaAs
single crystal Ge substrate
Ge
Si substrate
Si
| 10–2000 nm |
| — |
Thickness | 100–500 nm | — |
Temperature | 300–500 °C | — |
Thickness | 100–400 nm | — |
SiO₂ layer
SiO₂
single crystal GaAs substrate
GaAs
single crystal Ge substrate
Ge
Si substrate
Si
| 10–2000 nm |
| — |
Thickness | 100–500 nm | — |
Temperature | 300–500 °C | — |
Thickness | 100–400 nm | — |
SiO₂ layer
SiO₂
single crystal GaAs substrate
GaAs
single crystal Ge substrate
Ge
Si substrate
Si
| 10–2000 nm |
| — |
Thickness | 100–500 nm | — |
Temperature | 300–500 °C | — |
Thickness | 100–400 nm | — |
SiO₂ layer
SiO₂
single crystal GaAs substrate
GaAs
single crystal Ge substrate
Ge
Si substrate
Si
| 10–2000 nm |
| — |
Thickness | 100–500 nm | — |
Temperature | 300–500 °C | — |
Thickness | 100–400 nm | — |