Patent
US 12,595,536 B1NANOCOMPOSITES INCLUDING GALLIUM ARSENIDE AND SILICON
Ralph Korenstein
Raytheon Company, Arlington, VA (US)·Apr. 7, 2026·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 12,595,536 B1Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates ZnS and ZnS:CLS composite transmis- sion data.
FIG. 2 and
FIG. 3 illustrate the transmittance of GaAs and Si in accordance with some embodiments.
FIG. 4 illustrates a GaAs—Si Phase Diagram in accor- dance with some embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanocomposite comprising: silicon (Si); and gallium arsenide (GaAs); wherein the nanocomposite has a molar ratio of the Si to the GaAs of about 5:95 to about 95:5.
The nanocomposite of claim 1, wherein the Si and GaAs together are 80 wt % to 100 wt % of the nanocom-posite.
The nanocomposite of claim 1, wherein the Si and GaAs together are 99.999 wt % to 100 wt % of the nanocomposite.
The nanocomposite of claim 1, wherein the nanocom-posite has a molar ratio of the Si to the GaAs of about 1:9 to about 9:1.
The nanocomposite of claim 1, wherein the Si and GaAs are homogeneously distributed throughout the nanocomposite.
The nanocomposite of claim 1, wherein the nanocom-posite is substantially free of Si-containing phases that comprise GaAs, and wherein the nanocomposite is substan-tially free of GaAs-containing phases that comprise Si.
The nanocomposite of claim 1, wherein the nanocom-posite comprises independent phases of the Si and the GaAs that are distinct from one another.
The nanocomposite of claim 1, further comprising one or more additives, wherein the one or more additives are homogeneously distributed throughout the nanocomposite, wherein the one or more additives comprise a material with greater hardness than Si or GaAs, and wherein the one or more additives are 0.0001 wt % to 20 wt % of the nanocomposite.
The nanocomposite of claim 1, wherein the nanocom-posite has a hardness that is greater than a hardness of Si and that is greater than a hardness of GaAs.
The nanocomposite of claim 1, wherein the nanocom-posite has a transmittance of 50% to 100% for shortwave-infrared electromagnetic radiation, midwave-infrared elec-tromagnetic radiation, and longwave-infrared electromagnetic radiation.
The nanocomposite of claim 1, wherein the nanocom-posite has a transmittance of 50% to 100% for longwave-infrared electromagnetic radiation having a wavelength of 5 µm to 20 µm.
A nanocomposite comprising: silicon (Si); gallium arsenide (GaAs); and one or more additives, wherein the one or more additives are homogeneously distributed throughout the nanocomposite, the one or more additives comprise a mate-rial with greater hardness than Si or GaAs, and the one or more additives are 0.0001 wt % to 20 wt % of the nanocomposite.
The nanocomposite of claim 17, wherein the one or more additives comprise diamond particles, silicon carbide particles, silicon nitride particles, or a combination thereof.
A nanocomposite comprising: silicon (Si) that is at least about 99.99 wt % pure; and gallium arsenide (GaAs) that forms a homogeneous mix-ture with the Si, wherein the GaAs is at least about 99.99 wt % pure, and the nanocomposite has a molar ratio of the Si to the GaAs of about 1:9 to about 9:1; wherein the nanocomposite comprises independent phases of the Si and the GaAs that are distinct from one another, the nanocomposite is substantially free of phases of the Si and phases of the GaAs that are combined or indistinct from one another, and the independent phase of the Si and the independent phase of the GaAs independently have a largest dimension of 50 nm to 400 nm. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaAs-Si nanocomposite
infrared window
Materials described outside the worked examples.
silicon
Si
gallium arsenide
GaAs
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
IR transmittance (SWIR, MWIR, LWIR) | 50–100 % | — |
LWIR transmittance at 5–20 µm | 50–100 % | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 13
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,595,536 B1Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates ZnS and ZnS:CLS composite transmis- sion data.
FIG. 2 and
FIG. 3 illustrate the transmittance of GaAs and Si in accordance with some embodiments.
FIG. 4 illustrates a GaAs—Si Phase Diagram in accor- dance with some embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanocomposite comprising: silicon (Si); and gallium arsenide (GaAs); wherein the nanocomposite has a molar ratio of the Si to the GaAs of about 5:95 to about 95:5.
The nanocomposite of claim 1, wherein the Si and GaAs together are 80 wt % to 100 wt % of the nanocom-posite.
The nanocomposite of claim 1, wherein the Si and GaAs together are 99.999 wt % to 100 wt % of the nanocomposite.
The nanocomposite of claim 1, wherein the nanocom-posite has a molar ratio of the Si to the GaAs of about 1:9 to about 9:1.
The nanocomposite of claim 1, wherein the Si and GaAs are homogeneously distributed throughout the nanocomposite.
The nanocomposite of claim 1, wherein the nanocom-posite is substantially free of Si-containing phases that comprise GaAs, and wherein the nanocomposite is substan-tially free of GaAs-containing phases that comprise Si.
The nanocomposite of claim 1, wherein the nanocom-posite comprises independent phases of the Si and the GaAs that are distinct from one another.
The nanocomposite of claim 1, further comprising one or more additives, wherein the one or more additives are homogeneously distributed throughout the nanocomposite, wherein the one or more additives comprise a material with greater hardness than Si or GaAs, and wherein the one or more additives are 0.0001 wt % to 20 wt % of the nanocomposite.
The nanocomposite of claim 1, wherein the nanocom-posite has a hardness that is greater than a hardness of Si and that is greater than a hardness of GaAs.
The nanocomposite of claim 1, wherein the nanocom-posite has a transmittance of 50% to 100% for shortwave-infrared electromagnetic radiation, midwave-infrared elec-tromagnetic radiation, and longwave-infrared electromagnetic radiation.
The nanocomposite of claim 1, wherein the nanocom-posite has a transmittance of 50% to 100% for longwave-infrared electromagnetic radiation having a wavelength of 5 µm to 20 µm.
A nanocomposite comprising: silicon (Si); gallium arsenide (GaAs); and one or more additives, wherein the one or more additives are homogeneously distributed throughout the nanocomposite, the one or more additives comprise a mate-rial with greater hardness than Si or GaAs, and the one or more additives are 0.0001 wt % to 20 wt % of the nanocomposite.
The nanocomposite of claim 17, wherein the one or more additives comprise diamond particles, silicon carbide particles, silicon nitride particles, or a combination thereof.
A nanocomposite comprising: silicon (Si) that is at least about 99.99 wt % pure; and gallium arsenide (GaAs) that forms a homogeneous mix-ture with the Si, wherein the GaAs is at least about 99.99 wt % pure, and the nanocomposite has a molar ratio of the Si to the GaAs of about 1:9 to about 9:1; wherein the nanocomposite comprises independent phases of the Si and the GaAs that are distinct from one another, the nanocomposite is substantially free of phases of the Si and phases of the GaAs that are combined or indistinct from one another, and the independent phase of the Si and the independent phase of the GaAs independently have a largest dimension of 50 nm to 400 nm. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaAs-Si nanocomposite
infrared window
Materials described outside the worked examples.
silicon
Si
gallium arsenide
GaAs
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
IR transmittance (SWIR, MWIR, LWIR) | 50–100 % | — |
LWIR transmittance at 5–20 µm | 50–100 % | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 13
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,595,536 B1Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates ZnS and ZnS:CLS composite transmis- sion data.
FIG. 2 and
FIG. 3 illustrate the transmittance of GaAs and Si in accordance with some embodiments.
FIG. 4 illustrates a GaAs—Si Phase Diagram in accor- dance with some embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanocomposite comprising: silicon (Si); and gallium arsenide (GaAs); wherein the nanocomposite has a molar ratio of the Si to the GaAs of about 5:95 to about 95:5.
The nanocomposite of claim 1, wherein the Si and GaAs together are 80 wt % to 100 wt % of the nanocom-posite.
The nanocomposite of claim 1, wherein the Si and GaAs together are 99.999 wt % to 100 wt % of the nanocomposite.
The nanocomposite of claim 1, wherein the nanocom-posite has a molar ratio of the Si to the GaAs of about 1:9 to about 9:1.
The nanocomposite of claim 1, wherein the Si and GaAs are homogeneously distributed throughout the nanocomposite.
The nanocomposite of claim 1, wherein the nanocom-posite is substantially free of Si-containing phases that comprise GaAs, and wherein the nanocomposite is substan-tially free of GaAs-containing phases that comprise Si.
The nanocomposite of claim 1, wherein the nanocom-posite comprises independent phases of the Si and the GaAs that are distinct from one another.
The nanocomposite of claim 1, further comprising one or more additives, wherein the one or more additives are homogeneously distributed throughout the nanocomposite, wherein the one or more additives comprise a material with greater hardness than Si or GaAs, and wherein the one or more additives are 0.0001 wt % to 20 wt % of the nanocomposite.
The nanocomposite of claim 1, wherein the nanocom-posite has a hardness that is greater than a hardness of Si and that is greater than a hardness of GaAs.
The nanocomposite of claim 1, wherein the nanocom-posite has a transmittance of 50% to 100% for shortwave-infrared electromagnetic radiation, midwave-infrared elec-tromagnetic radiation, and longwave-infrared electromagnetic radiation.
The nanocomposite of claim 1, wherein the nanocom-posite has a transmittance of 50% to 100% for longwave-infrared electromagnetic radiation having a wavelength of 5 µm to 20 µm.
A nanocomposite comprising: silicon (Si); gallium arsenide (GaAs); and one or more additives, wherein the one or more additives are homogeneously distributed throughout the nanocomposite, the one or more additives comprise a mate-rial with greater hardness than Si or GaAs, and the one or more additives are 0.0001 wt % to 20 wt % of the nanocomposite.
The nanocomposite of claim 17, wherein the one or more additives comprise diamond particles, silicon carbide particles, silicon nitride particles, or a combination thereof.
A nanocomposite comprising: silicon (Si) that is at least about 99.99 wt % pure; and gallium arsenide (GaAs) that forms a homogeneous mix-ture with the Si, wherein the GaAs is at least about 99.99 wt % pure, and the nanocomposite has a molar ratio of the Si to the GaAs of about 1:9 to about 9:1; wherein the nanocomposite comprises independent phases of the Si and the GaAs that are distinct from one another, the nanocomposite is substantially free of phases of the Si and phases of the GaAs that are combined or indistinct from one another, and the independent phase of the Si and the independent phase of the GaAs independently have a largest dimension of 50 nm to 400 nm. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaAs-Si nanocomposite
infrared window
Materials described outside the worked examples.
silicon
Si
gallium arsenide
GaAs
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
IR transmittance (SWIR, MWIR, LWIR) | 50–100 % | — |
LWIR transmittance at 5–20 µm | 50–100 % | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 13
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,595,536 B1Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates ZnS and ZnS:CLS composite transmis- sion data.
FIG. 2 and
FIG. 3 illustrate the transmittance of GaAs and Si in accordance with some embodiments.
FIG. 4 illustrates a GaAs—Si Phase Diagram in accor- dance with some embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanocomposite comprising: silicon (Si); and gallium arsenide (GaAs); wherein the nanocomposite has a molar ratio of the Si to the GaAs of about 5:95 to about 95:5.
The nanocomposite of claim 1, wherein the Si and GaAs together are 80 wt % to 100 wt % of the nanocom-posite.
The nanocomposite of claim 1, wherein the Si and GaAs together are 99.999 wt % to 100 wt % of the nanocomposite.
The nanocomposite of claim 1, wherein the nanocom-posite has a molar ratio of the Si to the GaAs of about 1:9 to about 9:1.
The nanocomposite of claim 1, wherein the Si and GaAs are homogeneously distributed throughout the nanocomposite.
The nanocomposite of claim 1, wherein the nanocom-posite is substantially free of Si-containing phases that comprise GaAs, and wherein the nanocomposite is substan-tially free of GaAs-containing phases that comprise Si.
The nanocomposite of claim 1, wherein the nanocom-posite comprises independent phases of the Si and the GaAs that are distinct from one another.
The nanocomposite of claim 1, further comprising one or more additives, wherein the one or more additives are homogeneously distributed throughout the nanocomposite, wherein the one or more additives comprise a material with greater hardness than Si or GaAs, and wherein the one or more additives are 0.0001 wt % to 20 wt % of the nanocomposite.
The nanocomposite of claim 1, wherein the nanocom-posite has a hardness that is greater than a hardness of Si and that is greater than a hardness of GaAs.
The nanocomposite of claim 1, wherein the nanocom-posite has a transmittance of 50% to 100% for shortwave-infrared electromagnetic radiation, midwave-infrared elec-tromagnetic radiation, and longwave-infrared electromagnetic radiation.
The nanocomposite of claim 1, wherein the nanocom-posite has a transmittance of 50% to 100% for longwave-infrared electromagnetic radiation having a wavelength of 5 µm to 20 µm.
A nanocomposite comprising: silicon (Si); gallium arsenide (GaAs); and one or more additives, wherein the one or more additives are homogeneously distributed throughout the nanocomposite, the one or more additives comprise a mate-rial with greater hardness than Si or GaAs, and the one or more additives are 0.0001 wt % to 20 wt % of the nanocomposite.
The nanocomposite of claim 17, wherein the one or more additives comprise diamond particles, silicon carbide particles, silicon nitride particles, or a combination thereof.
A nanocomposite comprising: silicon (Si) that is at least about 99.99 wt % pure; and gallium arsenide (GaAs) that forms a homogeneous mix-ture with the Si, wherein the GaAs is at least about 99.99 wt % pure, and the nanocomposite has a molar ratio of the Si to the GaAs of about 1:9 to about 9:1; wherein the nanocomposite comprises independent phases of the Si and the GaAs that are distinct from one another, the nanocomposite is substantially free of phases of the Si and phases of the GaAs that are combined or indistinct from one another, and the independent phase of the Si and the independent phase of the GaAs independently have a largest dimension of 50 nm to 400 nm. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaAs-Si nanocomposite
infrared window
Materials described outside the worked examples.
silicon
Si
gallium arsenide
GaAs
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
IR transmittance (SWIR, MWIR, LWIR) | 50–100 % | — |
LWIR transmittance at 5–20 µm | 50–100 % | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 13
Related documents with shared materials, methods, properties, or citations.
hardness additive
diamond particles
C
silicon carbide particles
SiC
silicon nitride particles
Si₃N₄
zinc sulfide
ZnS
calcium lanthanum sulfide
CaLa₂S₄
| 1–999 nm |
| — |
Thickness | 50–400 nm | — |
Thickness | 100–200 nm | — |
Thickness | 1–20 µm | — |
Thickness | 3–60 µm | — |
Thickness | 1–3 µm | — |
Thickness | 3–5 µm | — |
Thickness | 5–20 µm | — |
Temperature | 800–1100 °C | — |
Temperature | 900–1050 °C | — |
Temperature | 700–1150 °C | — |
Temperature | 40–1150 °C | — |
Temperature | ≤ 1150 °C | — |
Cited non-patent literature · 3
GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE
hardness additive
diamond particles
C
silicon carbide particles
SiC
silicon nitride particles
Si₃N₄
zinc sulfide
ZnS
calcium lanthanum sulfide
CaLa₂S₄
| 1–999 nm |
| — |
Thickness | 50–400 nm | — |
Thickness | 100–200 nm | — |
Thickness | 1–20 µm | — |
Thickness | 3–60 µm | — |
Thickness | 1–3 µm | — |
Thickness | 3–5 µm | — |
Thickness | 5–20 µm | — |
Temperature | 800–1100 °C | — |
Temperature | 900–1050 °C | — |
Temperature | 700–1150 °C | — |
Temperature | 40–1150 °C | — |
Temperature | ≤ 1150 °C | — |
Cited non-patent literature · 3
GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE
hardness additive
diamond particles
C
silicon carbide particles
SiC
silicon nitride particles
Si₃N₄
zinc sulfide
ZnS
calcium lanthanum sulfide
CaLa₂S₄
| 1–999 nm |
| — |
Thickness | 50–400 nm | — |
Thickness | 100–200 nm | — |
Thickness | 1–20 µm | — |
Thickness | 3–60 µm | — |
Thickness | 1–3 µm | — |
Thickness | 3–5 µm | — |
Thickness | 5–20 µm | — |
Temperature | 800–1100 °C | — |
Temperature | 900–1050 °C | — |
Temperature | 700–1150 °C | — |
Temperature | 40–1150 °C | — |
Temperature | ≤ 1150 °C | — |
Cited non-patent literature · 3
GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE
hardness additive
diamond particles
C
silicon carbide particles
SiC
silicon nitride particles
Si₃N₄
zinc sulfide
ZnS
calcium lanthanum sulfide
CaLa₂S₄
| 1–999 nm |
| — |
Thickness | 50–400 nm | — |
Thickness | 100–200 nm | — |
Thickness | 1–20 µm | — |
Thickness | 3–60 µm | — |
Thickness | 1–3 µm | — |
Thickness | 3–5 µm | — |
Thickness | 5–20 µm | — |
Temperature | 800–1100 °C | — |
Temperature | 900–1050 °C | — |
Temperature | 700–1150 °C | — |
Temperature | 40–1150 °C | — |
Temperature | ≤ 1150 °C | — |
Cited non-patent literature · 3
GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE