Patent
US 8,986,446Si-DOPED GaAs SINGLE CRYSTAL INGOT AND PROCESS FOR PRODUCING THE SAME, AND Si-DOPED GaAs SINGLE CRYSTAL WAFER PRODUCED FROM Si-DOPED GaAs SINGLE CRYSTAL INGOT
Yoshikazu Oshika
US
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US 8,986,446Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a longitudinal sectional view schematically showing the configuration of a crystal growing apparatus;
FIG. 2 is a longitudinal sectional view of a crucible;
FIG. 3 is a perspective view of a GaAs compound raw material prior to introducing Si;
FIG. 4 is a cross-sectional view the manner in which Ga raw material, As raw material, and other materials are loaded into a crucible for synthesizing a GaAs …
FIG. 5 is a perspective view of the manner in which a dopant raw material is introduced into the GaAs compound raw material;
FIG. 6 is a cross-sectional view of a GaAs compound raw material that has been loaded into the crucible of a crystal growing apparatus;
FIG. 7 is a longitudinal sectional view showing a crystal growing apparatus that has a stirring member; and
FIG. 8 is a graph showing the temperature at each position of the GaAs compound raw material. [KEY] [0088] 1 Crystal growing apparatus 10 Airtight container 11 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An Si-doped GaAs single crystal ingot for producing an Si-doped GaAs single crystal wafer, wherein the Si-doped GaAs single crystal ingot is one in which CO.8/C 0.1 < 2.0, where C O.1 is the carrier concentration in a portion in which the solidification ratio of said ingot is 0.1, and C O.8 is the carrier concentration in a portion in which the solidification ratio of said ingot is 0.8; and the average value of crystallinity evaluated in terms of etch pit density is 50 etch pits/cm2 or less in an area in which the solidification ratio is 0.1 or higher and 0.8 or lower, wher ein the carrier concentration is a density of electrons or holes at the portion of the ing ot in which the solidification ratio of said in g ot is either 0.1 or 0.8 and the solidification ratio is a parameter that designates a specific cross section of t he in got t he s p ecif i c cross section corresponding to a cross section formed when the solidification that acco mp anies the ingot growth has progessed to a certain extent in an in got growng p rocess in which cooli ng is started for a m e lted Ga A s raw material mel ted in a crucible p laced in a cr y stal g rowin a pp aratus.
The Si-doped GaAs single crystal ingot of Claim 1, wherein the Si- doped GaAs single crystal ingot is one which C 0.8/C 0. 1 < 1.4.
The Si-doped GaAs single crystal ingot of claim 1, wherein the Si- SVG 12926077.09-19-2014.I₀A₀BVJ₉PXXIFW3.CLM28203079.10.289.455.2139.519.svg 0.213 6.167 Graph Black and white higher and 1.0 x 101 9/cm3 or lower in an area in which the solidification ratio in said ingot is 0.1 or higher and 0.8 or lower.
An Si-doped GaAs single crystal wafer produced from an area in which said solidification ratio is 0.6 or higher and 0.8 or lower in the Si-doped GaAs single crystal ingot of claim 1, wherein the Si-doped GaAs single crystal wafer is one in which the average value of crystallinity evaluated in terms of etch pit density is 50 etch pits/cm2 or less.
Layer stacks claimed or described, ordered top of device to substrate.
Si-doped GaAs single crystal ingot
Si-doped GaAs single crystal wafer
Materials described outside the worked examples.
Si-doped GaAs single crystal
GaAs:Si
B₂O₃
Si dopant
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 8 is a graph showing the temperature at each position of the GaAs compound raw material. [KEY] [0088] 1 Crystal growing apparatus 10 Airtight container 11 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
C0.8/C0.1 ratio (solidification ratio 0.8 vs 0.1) | — | GaAs:Si |
Average EPD in solidification ratio 0.1-0.8 region (claim 1) | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,986,446Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a longitudinal sectional view schematically showing the configuration of a crystal growing apparatus;
FIG. 2 is a longitudinal sectional view of a crucible;
FIG. 3 is a perspective view of a GaAs compound raw material prior to introducing Si;
FIG. 4 is a cross-sectional view the manner in which Ga raw material, As raw material, and other materials are loaded into a crucible for synthesizing a GaAs …
FIG. 5 is a perspective view of the manner in which a dopant raw material is introduced into the GaAs compound raw material;
FIG. 6 is a cross-sectional view of a GaAs compound raw material that has been loaded into the crucible of a crystal growing apparatus;
FIG. 7 is a longitudinal sectional view showing a crystal growing apparatus that has a stirring member; and
FIG. 8 is a graph showing the temperature at each position of the GaAs compound raw material. [KEY] [0088] 1 Crystal growing apparatus 10 Airtight container 11 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An Si-doped GaAs single crystal ingot for producing an Si-doped GaAs single crystal wafer, wherein the Si-doped GaAs single crystal ingot is one in which CO.8/C 0.1 < 2.0, where C O.1 is the carrier concentration in a portion in which the solidification ratio of said ingot is 0.1, and C O.8 is the carrier concentration in a portion in which the solidification ratio of said ingot is 0.8; and the average value of crystallinity evaluated in terms of etch pit density is 50 etch pits/cm2 or less in an area in which the solidification ratio is 0.1 or higher and 0.8 or lower, wher ein the carrier concentration is a density of electrons or holes at the portion of the ing ot in which the solidification ratio of said in g ot is either 0.1 or 0.8 and the solidification ratio is a parameter that designates a specific cross section of t he in got t he s p ecif i c cross section corresponding to a cross section formed when the solidification that acco mp anies the ingot growth has progessed to a certain extent in an in got growng p rocess in which cooli ng is started for a m e lted Ga A s raw material mel ted in a crucible p laced in a cr y stal g rowin a pp aratus.
The Si-doped GaAs single crystal ingot of Claim 1, wherein the Si- doped GaAs single crystal ingot is one which C 0.8/C 0. 1 < 1.4.
The Si-doped GaAs single crystal ingot of claim 1, wherein the Si- SVG 12926077.09-19-2014.I₀A₀BVJ₉PXXIFW3.CLM28203079.10.289.455.2139.519.svg 0.213 6.167 Graph Black and white higher and 1.0 x 101 9/cm3 or lower in an area in which the solidification ratio in said ingot is 0.1 or higher and 0.8 or lower.
An Si-doped GaAs single crystal wafer produced from an area in which said solidification ratio is 0.6 or higher and 0.8 or lower in the Si-doped GaAs single crystal ingot of claim 1, wherein the Si-doped GaAs single crystal wafer is one in which the average value of crystallinity evaluated in terms of etch pit density is 50 etch pits/cm2 or less.
Layer stacks claimed or described, ordered top of device to substrate.
Si-doped GaAs single crystal ingot
Si-doped GaAs single crystal wafer
Materials described outside the worked examples.
Si-doped GaAs single crystal
GaAs:Si
B₂O₃
Si dopant
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 8 is a graph showing the temperature at each position of the GaAs compound raw material. [KEY] [0088] 1 Crystal growing apparatus 10 Airtight container 11 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
C0.8/C0.1 ratio (solidification ratio 0.8 vs 0.1) | — | GaAs:Si |
Average EPD in solidification ratio 0.1-0.8 region (claim 1) | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,986,446Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a longitudinal sectional view schematically showing the configuration of a crystal growing apparatus;
FIG. 2 is a longitudinal sectional view of a crucible;
FIG. 3 is a perspective view of a GaAs compound raw material prior to introducing Si;
FIG. 4 is a cross-sectional view the manner in which Ga raw material, As raw material, and other materials are loaded into a crucible for synthesizing a GaAs …
FIG. 5 is a perspective view of the manner in which a dopant raw material is introduced into the GaAs compound raw material;
FIG. 6 is a cross-sectional view of a GaAs compound raw material that has been loaded into the crucible of a crystal growing apparatus;
FIG. 7 is a longitudinal sectional view showing a crystal growing apparatus that has a stirring member; and
FIG. 8 is a graph showing the temperature at each position of the GaAs compound raw material. [KEY] [0088] 1 Crystal growing apparatus 10 Airtight container 11 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An Si-doped GaAs single crystal ingot for producing an Si-doped GaAs single crystal wafer, wherein the Si-doped GaAs single crystal ingot is one in which CO.8/C 0.1 < 2.0, where C O.1 is the carrier concentration in a portion in which the solidification ratio of said ingot is 0.1, and C O.8 is the carrier concentration in a portion in which the solidification ratio of said ingot is 0.8; and the average value of crystallinity evaluated in terms of etch pit density is 50 etch pits/cm2 or less in an area in which the solidification ratio is 0.1 or higher and 0.8 or lower, wher ein the carrier concentration is a density of electrons or holes at the portion of the ing ot in which the solidification ratio of said in g ot is either 0.1 or 0.8 and the solidification ratio is a parameter that designates a specific cross section of t he in got t he s p ecif i c cross section corresponding to a cross section formed when the solidification that acco mp anies the ingot growth has progessed to a certain extent in an in got growng p rocess in which cooli ng is started for a m e lted Ga A s raw material mel ted in a crucible p laced in a cr y stal g rowin a pp aratus.
The Si-doped GaAs single crystal ingot of Claim 1, wherein the Si- doped GaAs single crystal ingot is one which C 0.8/C 0. 1 < 1.4.
The Si-doped GaAs single crystal ingot of claim 1, wherein the Si- SVG 12926077.09-19-2014.I₀A₀BVJ₉PXXIFW3.CLM28203079.10.289.455.2139.519.svg 0.213 6.167 Graph Black and white higher and 1.0 x 101 9/cm3 or lower in an area in which the solidification ratio in said ingot is 0.1 or higher and 0.8 or lower.
An Si-doped GaAs single crystal wafer produced from an area in which said solidification ratio is 0.6 or higher and 0.8 or lower in the Si-doped GaAs single crystal ingot of claim 1, wherein the Si-doped GaAs single crystal wafer is one in which the average value of crystallinity evaluated in terms of etch pit density is 50 etch pits/cm2 or less.
Layer stacks claimed or described, ordered top of device to substrate.
Si-doped GaAs single crystal ingot
Si-doped GaAs single crystal wafer
Materials described outside the worked examples.
Si-doped GaAs single crystal
GaAs:Si
B₂O₃
Si dopant
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 8 is a graph showing the temperature at each position of the GaAs compound raw material. [KEY] [0088] 1 Crystal growing apparatus 10 Airtight container 11 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
C0.8/C0.1 ratio (solidification ratio 0.8 vs 0.1) | — | GaAs:Si |
Average EPD in solidification ratio 0.1-0.8 region (claim 1) | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,986,446Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a longitudinal sectional view schematically showing the configuration of a crystal growing apparatus;
FIG. 2 is a longitudinal sectional view of a crucible;
FIG. 3 is a perspective view of a GaAs compound raw material prior to introducing Si;
FIG. 4 is a cross-sectional view the manner in which Ga raw material, As raw material, and other materials are loaded into a crucible for synthesizing a GaAs …
FIG. 5 is a perspective view of the manner in which a dopant raw material is introduced into the GaAs compound raw material;
FIG. 6 is a cross-sectional view of a GaAs compound raw material that has been loaded into the crucible of a crystal growing apparatus;
FIG. 7 is a longitudinal sectional view showing a crystal growing apparatus that has a stirring member; and
FIG. 8 is a graph showing the temperature at each position of the GaAs compound raw material. [KEY] [0088] 1 Crystal growing apparatus 10 Airtight container 11 …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An Si-doped GaAs single crystal ingot for producing an Si-doped GaAs single crystal wafer, wherein the Si-doped GaAs single crystal ingot is one in which CO.8/C 0.1 < 2.0, where C O.1 is the carrier concentration in a portion in which the solidification ratio of said ingot is 0.1, and C O.8 is the carrier concentration in a portion in which the solidification ratio of said ingot is 0.8; and the average value of crystallinity evaluated in terms of etch pit density is 50 etch pits/cm2 or less in an area in which the solidification ratio is 0.1 or higher and 0.8 or lower, wher ein the carrier concentration is a density of electrons or holes at the portion of the ing ot in which the solidification ratio of said in g ot is either 0.1 or 0.8 and the solidification ratio is a parameter that designates a specific cross section of t he in got t he s p ecif i c cross section corresponding to a cross section formed when the solidification that acco mp anies the ingot growth has progessed to a certain extent in an in got growng p rocess in which cooli ng is started for a m e lted Ga A s raw material mel ted in a crucible p laced in a cr y stal g rowin a pp aratus.
The Si-doped GaAs single crystal ingot of Claim 1, wherein the Si- doped GaAs single crystal ingot is one which C 0.8/C 0. 1 < 1.4.
The Si-doped GaAs single crystal ingot of claim 1, wherein the Si- SVG 12926077.09-19-2014.I₀A₀BVJ₉PXXIFW3.CLM28203079.10.289.455.2139.519.svg 0.213 6.167 Graph Black and white higher and 1.0 x 101 9/cm3 or lower in an area in which the solidification ratio in said ingot is 0.1 or higher and 0.8 or lower.
An Si-doped GaAs single crystal wafer produced from an area in which said solidification ratio is 0.6 or higher and 0.8 or lower in the Si-doped GaAs single crystal ingot of claim 1, wherein the Si-doped GaAs single crystal wafer is one in which the average value of crystallinity evaluated in terms of etch pit density is 50 etch pits/cm2 or less.
Layer stacks claimed or described, ordered top of device to substrate.
Si-doped GaAs single crystal ingot
Si-doped GaAs single crystal wafer
Materials described outside the worked examples.
Si-doped GaAs single crystal
GaAs:Si
B₂O₃
Si dopant
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 8 is a graph showing the temperature at each position of the GaAs compound raw material. [KEY] [0088] 1 Crystal growing apparatus 10 Airtight container 11 …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
C0.8/C0.1 ratio (solidification ratio 0.8 vs 0.1) | — | GaAs:Si |
Average EPD in solidification ratio 0.1-0.8 region (claim 1) | — |
Related documents with shared materials, methods, properties, or citations.
Si
C0.8/C0.1 ratio tighter limit (claim 2) | — | GaAs:Si |
Average EPD in solidification ratio 0.1-0.8 region (claim 3) | — | GaAs:Si |
Carrier concentration range in solidification ratio 0.1-0.8 (claim 4) | — | GaAs:Si |
Average EPD of wafer from solidification ratio 0.6-0.8 region (claim 5) | — | GaAs:Si |
Carrier concentration range for wafer (claim 7) | — | GaAs:Si |
Si
C0.8/C0.1 ratio tighter limit (claim 2) | — | GaAs:Si |
Average EPD in solidification ratio 0.1-0.8 region (claim 3) | — | GaAs:Si |
Carrier concentration range in solidification ratio 0.1-0.8 (claim 4) | — | GaAs:Si |
Average EPD of wafer from solidification ratio 0.6-0.8 region (claim 5) | — | GaAs:Si |
Carrier concentration range for wafer (claim 7) | — | GaAs:Si |
Si
C0.8/C0.1 ratio tighter limit (claim 2) | — | GaAs:Si |
Average EPD in solidification ratio 0.1-0.8 region (claim 3) | — | GaAs:Si |
Carrier concentration range in solidification ratio 0.1-0.8 (claim 4) | — | GaAs:Si |
Average EPD of wafer from solidification ratio 0.6-0.8 region (claim 5) | — | GaAs:Si |
Carrier concentration range for wafer (claim 7) | — | GaAs:Si |
Si
C0.8/C0.1 ratio tighter limit (claim 2) | — | GaAs:Si |
Average EPD in solidification ratio 0.1-0.8 region (claim 3) | — | GaAs:Si |
Carrier concentration range in solidification ratio 0.1-0.8 (claim 4) | — | GaAs:Si |
Average EPD of wafer from solidification ratio 0.6-0.8 region (claim 5) | — | GaAs:Si |
Carrier concentration range for wafer (claim 7) | — | GaAs:Si |