Patent
US 11,319,646OF INVENTION
Hiroshi FUKUNAGA
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,319,646Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium arsenide single crystal substrate having a circular main surface, when the diameter of the main surface of the gallium arsenide single crystal substrate is represented by D and the number of etch pits formed on the main surface by immersing the gallium arsenide single crystal substrate in molten potassium hydroxide at 500 ° C for 10 minutes is counted, the number C 1 of etch pits in a first circular region having a diameter of 0.2 D around the center of the main surface being 0 or more and 10 or less, wherein the diameter D of the gallium arsenide single crystal substrate is not less than 75 mm and not more than 205 mm. Previously presented
The gallium arsenide single crystal substrate according to claim 1, wherein the number C 1 of etch pits in the first circular region of the gallium arsenide single crystal substrate is 0 or more and 5 or less. Original
The gallium arsenide single crystal substrate according to claim 1, wherein a difference C 2 -C 1 between the number C 2 of etch pits in a second circular region having a diameter of 0.5 D around the center of the main surface of the gallium arsenide single crystal substrate and the number C 1 of etch pits in the first circular region thereof is 0 or more and 5 or less. Previously presented
The gallium arsenide single crystal substrate according to claim 1, wherein an etch pit density representing the number of etch pits in 1 cm 2 of the main surface of the gallium arsenide single crystal substrate is 0 or more and 1000 or less. Previously presented
The gallium arsenide single crystal substrate according to claim 1, wherein the main surface of the gallium arsenide single crystal substrate is a 1 100 1 plane. Previously presented
The gallium arsenide single crystal substrate according to claim 1, wherein the main surface of the gallium arsenide single crystal substrate has an off angle of greater than 0 0 and equal to or less than 15 0 from the 1 100 1 plane. Previously presented
The gallium arsenide single crystal substrate according to claim 1, wherein the gallium arsenide single crystal substrate has an n-type conductivity. Previously presented
The gallium arsenide single crystal substrate according to claim 1, wherein the gallium arsenide single crystal substrate contains silicon, and the atomic concentration of the silicon is 1x10 16 c m- 3 or more and 1x10 19 c m- 3 or less. Previously presented
Canceled
A gallium arsenide single crystal substrate having a circular main surface, when the diameter of the main surface of the gallium arsenide single crystal substrate is represented by D and the number of etch pits formed on the main surface by immersing the gallium arsenide single crystal substrate in molten potassium hydroxide at 500 ° C for 10 minutes is counted, the number C 1 of etch pits in a first circular region having a diameter of 0.2 D around the center of the main surface being 0 or more and 10 or less, wherein the diameter D of the gallium arsenide single crystal substrate is not less than 100 mm and not more than 205 mm. New
Materials described outside the worked examples.
gallium arsenide single crystal substrate
GaAs
silicon dopant
Si
potassium hydroxide
KOH
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Number C1 of etch pits in first circular region (diameter 0.2D) | — | GaAs |
Number C1 of etch pits in first circular region (diameter 0.2D), tighter range | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,319,646Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium arsenide single crystal substrate having a circular main surface, when the diameter of the main surface of the gallium arsenide single crystal substrate is represented by D and the number of etch pits formed on the main surface by immersing the gallium arsenide single crystal substrate in molten potassium hydroxide at 500 ° C for 10 minutes is counted, the number C 1 of etch pits in a first circular region having a diameter of 0.2 D around the center of the main surface being 0 or more and 10 or less, wherein the diameter D of the gallium arsenide single crystal substrate is not less than 75 mm and not more than 205 mm. Previously presented
The gallium arsenide single crystal substrate according to claim 1, wherein the number C 1 of etch pits in the first circular region of the gallium arsenide single crystal substrate is 0 or more and 5 or less. Original
The gallium arsenide single crystal substrate according to claim 1, wherein a difference C 2 -C 1 between the number C 2 of etch pits in a second circular region having a diameter of 0.5 D around the center of the main surface of the gallium arsenide single crystal substrate and the number C 1 of etch pits in the first circular region thereof is 0 or more and 5 or less. Previously presented
The gallium arsenide single crystal substrate according to claim 1, wherein an etch pit density representing the number of etch pits in 1 cm 2 of the main surface of the gallium arsenide single crystal substrate is 0 or more and 1000 or less. Previously presented
The gallium arsenide single crystal substrate according to claim 1, wherein the main surface of the gallium arsenide single crystal substrate is a 1 100 1 plane. Previously presented
The gallium arsenide single crystal substrate according to claim 1, wherein the main surface of the gallium arsenide single crystal substrate has an off angle of greater than 0 0 and equal to or less than 15 0 from the 1 100 1 plane. Previously presented
The gallium arsenide single crystal substrate according to claim 1, wherein the gallium arsenide single crystal substrate has an n-type conductivity. Previously presented
The gallium arsenide single crystal substrate according to claim 1, wherein the gallium arsenide single crystal substrate contains silicon, and the atomic concentration of the silicon is 1x10 16 c m- 3 or more and 1x10 19 c m- 3 or less. Previously presented
Canceled
A gallium arsenide single crystal substrate having a circular main surface, when the diameter of the main surface of the gallium arsenide single crystal substrate is represented by D and the number of etch pits formed on the main surface by immersing the gallium arsenide single crystal substrate in molten potassium hydroxide at 500 ° C for 10 minutes is counted, the number C 1 of etch pits in a first circular region having a diameter of 0.2 D around the center of the main surface being 0 or more and 10 or less, wherein the diameter D of the gallium arsenide single crystal substrate is not less than 100 mm and not more than 205 mm. New
Materials described outside the worked examples.
gallium arsenide single crystal substrate
GaAs
silicon dopant
Si
potassium hydroxide
KOH
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Number C1 of etch pits in first circular region (diameter 0.2D) | — | GaAs |
Number C1 of etch pits in first circular region (diameter 0.2D), tighter range | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,319,646Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium arsenide single crystal substrate having a circular main surface, when the diameter of the main surface of the gallium arsenide single crystal substrate is represented by D and the number of etch pits formed on the main surface by immersing the gallium arsenide single crystal substrate in molten potassium hydroxide at 500 ° C for 10 minutes is counted, the number C 1 of etch pits in a first circular region having a diameter of 0.2 D around the center of the main surface being 0 or more and 10 or less, wherein the diameter D of the gallium arsenide single crystal substrate is not less than 75 mm and not more than 205 mm. Previously presented
The gallium arsenide single crystal substrate according to claim 1, wherein the number C 1 of etch pits in the first circular region of the gallium arsenide single crystal substrate is 0 or more and 5 or less. Original
The gallium arsenide single crystal substrate according to claim 1, wherein a difference C 2 -C 1 between the number C 2 of etch pits in a second circular region having a diameter of 0.5 D around the center of the main surface of the gallium arsenide single crystal substrate and the number C 1 of etch pits in the first circular region thereof is 0 or more and 5 or less. Previously presented
The gallium arsenide single crystal substrate according to claim 1, wherein an etch pit density representing the number of etch pits in 1 cm 2 of the main surface of the gallium arsenide single crystal substrate is 0 or more and 1000 or less. Previously presented
The gallium arsenide single crystal substrate according to claim 1, wherein the main surface of the gallium arsenide single crystal substrate is a 1 100 1 plane. Previously presented
The gallium arsenide single crystal substrate according to claim 1, wherein the main surface of the gallium arsenide single crystal substrate has an off angle of greater than 0 0 and equal to or less than 15 0 from the 1 100 1 plane. Previously presented
The gallium arsenide single crystal substrate according to claim 1, wherein the gallium arsenide single crystal substrate has an n-type conductivity. Previously presented
The gallium arsenide single crystal substrate according to claim 1, wherein the gallium arsenide single crystal substrate contains silicon, and the atomic concentration of the silicon is 1x10 16 c m- 3 or more and 1x10 19 c m- 3 or less. Previously presented
Canceled
A gallium arsenide single crystal substrate having a circular main surface, when the diameter of the main surface of the gallium arsenide single crystal substrate is represented by D and the number of etch pits formed on the main surface by immersing the gallium arsenide single crystal substrate in molten potassium hydroxide at 500 ° C for 10 minutes is counted, the number C 1 of etch pits in a first circular region having a diameter of 0.2 D around the center of the main surface being 0 or more and 10 or less, wherein the diameter D of the gallium arsenide single crystal substrate is not less than 100 mm and not more than 205 mm. New
Materials described outside the worked examples.
gallium arsenide single crystal substrate
GaAs
silicon dopant
Si
potassium hydroxide
KOH
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Number C1 of etch pits in first circular region (diameter 0.2D) | — | GaAs |
Number C1 of etch pits in first circular region (diameter 0.2D), tighter range | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,319,646Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium arsenide single crystal substrate having a circular main surface, when the diameter of the main surface of the gallium arsenide single crystal substrate is represented by D and the number of etch pits formed on the main surface by immersing the gallium arsenide single crystal substrate in molten potassium hydroxide at 500 ° C for 10 minutes is counted, the number C 1 of etch pits in a first circular region having a diameter of 0.2 D around the center of the main surface being 0 or more and 10 or less, wherein the diameter D of the gallium arsenide single crystal substrate is not less than 75 mm and not more than 205 mm. Previously presented
The gallium arsenide single crystal substrate according to claim 1, wherein the number C 1 of etch pits in the first circular region of the gallium arsenide single crystal substrate is 0 or more and 5 or less. Original
The gallium arsenide single crystal substrate according to claim 1, wherein a difference C 2 -C 1 between the number C 2 of etch pits in a second circular region having a diameter of 0.5 D around the center of the main surface of the gallium arsenide single crystal substrate and the number C 1 of etch pits in the first circular region thereof is 0 or more and 5 or less. Previously presented
The gallium arsenide single crystal substrate according to claim 1, wherein an etch pit density representing the number of etch pits in 1 cm 2 of the main surface of the gallium arsenide single crystal substrate is 0 or more and 1000 or less. Previously presented
The gallium arsenide single crystal substrate according to claim 1, wherein the main surface of the gallium arsenide single crystal substrate is a 1 100 1 plane. Previously presented
The gallium arsenide single crystal substrate according to claim 1, wherein the main surface of the gallium arsenide single crystal substrate has an off angle of greater than 0 0 and equal to or less than 15 0 from the 1 100 1 plane. Previously presented
The gallium arsenide single crystal substrate according to claim 1, wherein the gallium arsenide single crystal substrate has an n-type conductivity. Previously presented
The gallium arsenide single crystal substrate according to claim 1, wherein the gallium arsenide single crystal substrate contains silicon, and the atomic concentration of the silicon is 1x10 16 c m- 3 or more and 1x10 19 c m- 3 or less. Previously presented
Canceled
A gallium arsenide single crystal substrate having a circular main surface, when the diameter of the main surface of the gallium arsenide single crystal substrate is represented by D and the number of etch pits formed on the main surface by immersing the gallium arsenide single crystal substrate in molten potassium hydroxide at 500 ° C for 10 minutes is counted, the number C 1 of etch pits in a first circular region having a diameter of 0.2 D around the center of the main surface being 0 or more and 10 or less, wherein the diameter D of the gallium arsenide single crystal substrate is not less than 100 mm and not more than 205 mm. New
Materials described outside the worked examples.
gallium arsenide single crystal substrate
GaAs
silicon dopant
Si
potassium hydroxide
KOH
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Number C1 of etch pits in first circular region (diameter 0.2D) | — | GaAs |
Number C1 of etch pits in first circular region (diameter 0.2D), tighter range | — |
Related documents with shared materials, methods, properties, or citations.
Difference C2-C1 of etch pits between second circular region (0.5D) and first circular region (0.2D) | — | GaAs |
Etch pit density over entire main surface | — | GaAs |
Atomic concentration of Si dopant in GaAs substrate | — | GaAsSi |
Thickness | 75–76.5 mm | — |
Thickness | 95–105 mm | — |
Thickness | 120–130 mm | — |
Thickness | 145–155 mm | — |
Thickness | 195–205 mm | — |
Temperature | 0.1–0.5 °C | — |
Temperature | 1243–1248 °C | — |
Temperature | 0.5–1 °C | — |
Temperature | 1228–1233 °C | — |
Thickness | ≤ 75 mm | — |
Thickness | ≤ 1 mm | — |
Temperature | ≤ 0.1 °C | — |
Thickness | ≥ 205 mm | — |
Thickness | ≥ 5 mm | — |
Electron qubits surfing on acoustic waves: review of recent progress
Difference C2-C1 of etch pits between second circular region (0.5D) and first circular region (0.2D) | — | GaAs |
Etch pit density over entire main surface | — | GaAs |
Atomic concentration of Si dopant in GaAs substrate | — | GaAsSi |
Thickness | 75–76.5 mm | — |
Thickness | 95–105 mm | — |
Thickness | 120–130 mm | — |
Thickness | 145–155 mm | — |
Thickness | 195–205 mm | — |
Temperature | 0.1–0.5 °C | — |
Temperature | 1243–1248 °C | — |
Temperature | 0.5–1 °C | — |
Temperature | 1228–1233 °C | — |
Thickness | ≤ 75 mm | — |
Thickness | ≤ 1 mm | — |
Temperature | ≤ 0.1 °C | — |
Thickness | ≥ 205 mm | — |
Thickness | ≥ 5 mm | — |
Electron qubits surfing on acoustic waves: review of recent progress
Difference C2-C1 of etch pits between second circular region (0.5D) and first circular region (0.2D) | — | GaAs |
Etch pit density over entire main surface | — | GaAs |
Atomic concentration of Si dopant in GaAs substrate | — | GaAsSi |
Thickness | 75–76.5 mm | — |
Thickness | 95–105 mm | — |
Thickness | 120–130 mm | — |
Thickness | 145–155 mm | — |
Thickness | 195–205 mm | — |
Temperature | 0.1–0.5 °C | — |
Temperature | 1243–1248 °C | — |
Temperature | 0.5–1 °C | — |
Temperature | 1228–1233 °C | — |
Thickness | ≤ 75 mm | — |
Thickness | ≤ 1 mm | — |
Temperature | ≤ 0.1 °C | — |
Thickness | ≥ 205 mm | — |
Thickness | ≥ 5 mm | — |
Electron qubits surfing on acoustic waves: review of recent progress
Difference C2-C1 of etch pits between second circular region (0.5D) and first circular region (0.2D) | — | GaAs |
Etch pit density over entire main surface | — | GaAs |
Atomic concentration of Si dopant in GaAs substrate | — | GaAsSi |
Thickness | 75–76.5 mm | — |
Thickness | 95–105 mm | — |
Thickness | 120–130 mm | — |
Thickness | 145–155 mm | — |
Thickness | 195–205 mm | — |
Temperature | 0.1–0.5 °C | — |
Temperature | 1243–1248 °C | — |
Temperature | 0.5–1 °C | — |
Temperature | 1228–1233 °C | — |
Thickness | ≤ 75 mm | — |
Thickness | ≤ 1 mm | — |
Temperature | ≤ 0.1 °C | — |
Thickness | ≥ 205 mm | — |
Thickness | ≥ 5 mm | — |
Electron qubits surfing on acoustic waves: review of recent progress