A gallium nitride epitaxial growth method, comprising the steps of: (1) providing a semiconductor laminated layer or a heterogeneous substrate; 5 (2) forming a p l atform on the semiconductor laminated layer or the heterogeneous substrate to serve as a use of a flexible nanoimprint; (3) forming a nano-pillar or a nano-hole on the semiconductor laminated layer or the heterogeneous substrate; and (4) forming a heterogeneous epitaxy region on the semiconductor laminated 10 layer or the heterogeneous substrate; wherein the step (3) of forming the nano-pillar or the nano-hole comprises: (i) using the flexible nano-imprint with a predetermined period on the semiconductor l aminated layer or the heterogeneous substrate; (ii) performing a dry-etching process once on the semiconductor laminated 15 layer or the heterogeneous substrate to transfer print a nano-pattern; and (111) performing a peel off process so that the nano-pattern forms the nano-pillar or the nano-hole on the semiconductor laminated layer or the heterogeneous substrate.

A gallium nitride epitaxial growth method, comprising: providing a substrate; 10 forming a pla t form on the substrate to serve as a flexible nano-imprint; forming a nano-pillar or hole on the substrate; and forming a heterogeneous epitaxy region on the substrate; wherein the substrate comprises an upper block and a lower block; the lower block abuts upon an upper surface of the substrate, the lower block is the 15 platform of the flexible nano-imprint; and the upper block is integrally formed and is continuously connected to the substrate to form a patterned layer of the nano-pillar or hole.

A gallium nitride epitaxial growth method, comprising; providing a semiconductor laminated layer or a heterogeneous substrate; 10 the semiconductor l aminated layer or heterogeneous substrate constitute an interface contacting a gallium nitride material; imprinting a flexible nanometer platform on the semiconductor laminated layer or the heterogeneous substrate; and transfer printing a nano-pillar or hole, and using molecule beam epitaxy 15 (MBE) to grow the nano-pillar or hole, formed by transfer printing the gal lium nitride material, on the semiconductor laminated layer or the heterogeneous substrate.

A gallium nitride epitaxial growth method, comprising the steps of: (1) providing a semiconductor laminated layer or a heterogeneous substrate; 5 (2) forming a p l atform on the semiconductor laminated layer or the heterogeneous substrate to serve as a use of a flexible nanoimprint; (3) forming a nano-pillar or a nano-hole on the semiconductor laminated layer or the heterogeneous substrate; and (4) forming a heterogeneous epitaxy region on the semiconductor laminated 10 layer or the heterogeneous substrate; wherein the step (3) of forming the nano-pillar or the nano-hole comprises: (i) using the flexible nano-imprint with a predetermined period on the semiconductor l aminated layer or the heterogeneous substrate; (ii) performing a dry-etching process once on the semiconductor laminated 15 layer or the heterogeneous substrate to transfer print a nano-pattern; and (111) performing a peel off process so that the nano-pattern forms the nano-pillar or the nano-hole on the semiconductor laminated layer or the heterogeneous substrate.

A gallium nitride epitaxial growth method, comprising: providing a substrate; 10 forming a pla t form on the substrate to serve as a flexible nano-imprint; forming a nano-pillar or hole on the substrate; and forming a heterogeneous epitaxy region on the substrate; wherein the substrate comprises an upper block and a lower block; the lower block abuts upon an upper surface of the substrate, the lower block is the 15 platform of the flexible nano-imprint; and the upper block is integrally formed and is continuously connected to the substrate to form a patterned layer of the nano-pillar or hole.

A gallium nitride epitaxial growth method, comprising; providing a semiconductor laminated layer or a heterogeneous substrate; 10 the semiconductor l aminated layer or heterogeneous substrate constitute an interface contacting a gallium nitride material; imprinting a flexible nanometer platform on the semiconductor laminated layer or the heterogeneous substrate; and transfer printing a nano-pillar or hole, and using molecule beam epitaxy 15 (MBE) to grow the nano-pillar or hole, formed by transfer printing the gal lium nitride material, on the semiconductor laminated layer or the heterogeneous substrate.

A gallium nitride epitaxial growth method, comprising the steps of: (1) providing a semiconductor laminated layer or a heterogeneous substrate; 5 (2) forming a p l atform on the semiconductor laminated layer or the heterogeneous substrate to serve as a use of a flexible nanoimprint; (3) forming a nano-pillar or a nano-hole on the semiconductor laminated layer or the heterogeneous substrate; and (4) forming a heterogeneous epitaxy region on the semiconductor laminated 10 layer or the heterogeneous substrate; wherein the step (3) of forming the nano-pillar or the nano-hole comprises: (i) using the flexible nano-imprint with a predetermined period on the semiconductor l aminated layer or the heterogeneous substrate; (ii) performing a dry-etching process once on the semiconductor laminated 15 layer or the heterogeneous substrate to transfer print a nano-pattern; and (111) performing a peel off process so that the nano-pattern forms the nano-pillar or the nano-hole on the semiconductor laminated layer or the heterogeneous substrate.

A gallium nitride epitaxial growth method, comprising: providing a substrate; 10 forming a pla t form on the substrate to serve as a flexible nano-imprint; forming a nano-pillar or hole on the substrate; and forming a heterogeneous epitaxy region on the substrate; wherein the substrate comprises an upper block and a lower block; the lower block abuts upon an upper surface of the substrate, the lower block is the 15 platform of the flexible nano-imprint; and the upper block is integrally formed and is continuously connected to the substrate to form a patterned layer of the nano-pillar or hole.

A gallium nitride epitaxial growth method, comprising; providing a semiconductor laminated layer or a heterogeneous substrate; 10 the semiconductor l aminated layer or heterogeneous substrate constitute an interface contacting a gallium nitride material; imprinting a flexible nanometer platform on the semiconductor laminated layer or the heterogeneous substrate; and transfer printing a nano-pillar or hole, and using molecule beam epitaxy 15 (MBE) to grow the nano-pillar or hole, formed by transfer printing the gal lium nitride material, on the semiconductor laminated layer or the heterogeneous substrate.

A gallium nitride epitaxial growth method, comprising the steps of: (1) providing a semiconductor laminated layer or a heterogeneous substrate; 5 (2) forming a p l atform on the semiconductor laminated layer or the heterogeneous substrate to serve as a use of a flexible nanoimprint; (3) forming a nano-pillar or a nano-hole on the semiconductor laminated layer or the heterogeneous substrate; and (4) forming a heterogeneous epitaxy region on the semiconductor laminated 10 layer or the heterogeneous substrate; wherein the step (3) of forming the nano-pillar or the nano-hole comprises: (i) using the flexible nano-imprint with a predetermined period on the semiconductor l aminated layer or the heterogeneous substrate; (ii) performing a dry-etching process once on the semiconductor laminated 15 layer or the heterogeneous substrate to transfer print a nano-pattern; and (111) performing a peel off process so that the nano-pattern forms the nano-pillar or the nano-hole on the semiconductor laminated layer or the heterogeneous substrate.

A gallium nitride epitaxial growth method, comprising: providing a substrate; 10 forming a pla t form on the substrate to serve as a flexible nano-imprint; forming a nano-pillar or hole on the substrate; and forming a heterogeneous epitaxy region on the substrate; wherein the substrate comprises an upper block and a lower block; the lower block abuts upon an upper surface of the substrate, the lower block is the 15 platform of the flexible nano-imprint; and the upper block is integrally formed and is continuously connected to the substrate to form a patterned layer of the nano-pillar or hole.

A gallium nitride epitaxial growth method, comprising; providing a semiconductor laminated layer or a heterogeneous substrate; 10 the semiconductor l aminated layer or heterogeneous substrate constitute an interface contacting a gallium nitride material; imprinting a flexible nanometer platform on the semiconductor laminated layer or the heterogeneous substrate; and transfer printing a nano-pillar or hole, and using molecule beam epitaxy 15 (MBE) to grow the nano-pillar or hole, formed by transfer printing the gal lium nitride material, on the semiconductor laminated layer or the heterogeneous substrate.