Patent
US 12,271,033 B2HETEROGENEOUS GaN LASERS AND ACTIVE COMPONENTS
Chong Zhang, Minh Tran, Tin Komljenovic
Nexus Photonics Inc., Goleta, CA (US)·Apr. 8, 2025·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 12,271,033 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a device according to one embodiment of the present invention, shown in cross section.
FIG. 2 (c) show three cross-sectional top-down views of devices according to some embodiments of the present invention.
FIG. 3 (b) show a cross-sectional end-on views of a device according to some embodiments of the present invention.
FIG. 4 shows a cross-sectional view of a device according to some embodiments of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising: first, second, third and fourth elements fabricated on a common substrate; wherein the first element comprises an active waveguide structure supporting a first optical mode, the second element comprises a passive waveguide structure sup-porting a second optical mode, the third element, at least partly butt-coupled to the first element, comprises an intermediate waveguide structure supporting intermediate optical modes, and a fourth element compris-ing TCO material that is attached to the first element; wherein, if the first optical mode differs from the second optical mode by more than a predetermined amount, a tapered waveguide structure in at least one of the second and third elements facilitates efficient adiabatic transformation between the second optical mode and one of the intermediate optical modes; wherein no adiabatic transformation occurs between any of the intermediate optical modes and the first optical mode; and wherein mutual alignments of the first, the second and the third elements are defined using lithographic alignment marks that facilitate precise alignment between layers formed during processing steps of fabricating the first, the second and the third elements.
A device of claim 1, wherein a lower surface of the third element is planar.
The device of claim 1, wherein an interface between the first and third elements is angled at an angle optimized to minimize reflections.
A device of claim 1, wherein the first element comprises GaN-based semicon-ductor layers.
A device of claim 1, wherein a refractive index of second element is between 1.6 and 2.2.
A device of claim 1, wherein the second element comprises SiN-based mate-rial.
A device of claim 1, wherein the first element comprising the active waveguide structure has at least three sub-layers; wherein at least one of the sub-layers in the active waveguide structure comprises a n-contact layer; and, wherein at least one of the sub-layers in the active waveguide structure comprises an active region, and at least one of the sub-layers in the active waveguide structure comprises a p-contact layer.
A device of claim 1, wherein the second element comprises AlN-based material. ∗ ∗ ∗ ∗ ∗
A device comprising: first, second, third and fourth elements fabricated on a common substrate; wherein the first element comprises an active waveguide structure supporting a first optical mode, the second element comprises a passive waveguide structure sup-porting a second optical mode, the third element, at least partly butt-coupled to the first element, comprises an intermediate waveguide structure supporting intermediate optical modes, and a fourth element compris-ing TCO material that is attached to the first element; wherein third element provides a cladding for the second element; wherein, if the first optical mode differs from the second optical mode by more than a predetermined amount, a tapered waveguide structure in second element facili-tates efficient adiabatic transformation between the second optical mode and one of the intermediate optical modes; wherein no adiabatic transformation occurs between any of the intermediate optical modes and the first optical mode; and wherein mutual alignments of the first, the second and the third elements are defined using lithographic alignment marks that facilitate precise alignment between layers formed during processing steps of fabricating the first, the second and the third elements.
A device of claim 12, wherein a lower surface of the third element is planar.
The device of claim 12, wherein an interface between the first and the third elements is angled at an angle optimized to minimize reflections.
A device of claim 12, wherein the first element comprises GaN-based semicon-ductor layers.
A device of claim 12, wherein a refractive index of second element is between 1.6 and 2.2.
A device of claim 12, wherein the second element comprises SiN-based mate-rial.
Layer stacks claimed or described, ordered top of device to substrate.
heterogeneous GaN photonic integrated circuit (butt-coupled, tapered intermediate)
heterogeneous GaN photonic integrated circuit (third element as cladding for second element)
Materials described outside the worked examples.
TCO material
GaN-based semiconductor
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
refractive index of second element (passive waveguide) | 1.6–2.2 | SiN |
refractive index of third element (intermediate waveguide), lower than second element | 1.55–2.15 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 5
Related documents with shared materials, methods, properties, or citations.
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Atlas literature
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US 12,271,033 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a device according to one embodiment of the present invention, shown in cross section.
FIG. 2 (c) show three cross-sectional top-down views of devices according to some embodiments of the present invention.
FIG. 3 (b) show a cross-sectional end-on views of a device according to some embodiments of the present invention.
FIG. 4 shows a cross-sectional view of a device according to some embodiments of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising: first, second, third and fourth elements fabricated on a common substrate; wherein the first element comprises an active waveguide structure supporting a first optical mode, the second element comprises a passive waveguide structure sup-porting a second optical mode, the third element, at least partly butt-coupled to the first element, comprises an intermediate waveguide structure supporting intermediate optical modes, and a fourth element compris-ing TCO material that is attached to the first element; wherein, if the first optical mode differs from the second optical mode by more than a predetermined amount, a tapered waveguide structure in at least one of the second and third elements facilitates efficient adiabatic transformation between the second optical mode and one of the intermediate optical modes; wherein no adiabatic transformation occurs between any of the intermediate optical modes and the first optical mode; and wherein mutual alignments of the first, the second and the third elements are defined using lithographic alignment marks that facilitate precise alignment between layers formed during processing steps of fabricating the first, the second and the third elements.
A device of claim 1, wherein a lower surface of the third element is planar.
The device of claim 1, wherein an interface between the first and third elements is angled at an angle optimized to minimize reflections.
A device of claim 1, wherein the first element comprises GaN-based semicon-ductor layers.
A device of claim 1, wherein a refractive index of second element is between 1.6 and 2.2.
A device of claim 1, wherein the second element comprises SiN-based mate-rial.
A device of claim 1, wherein the first element comprising the active waveguide structure has at least three sub-layers; wherein at least one of the sub-layers in the active waveguide structure comprises a n-contact layer; and, wherein at least one of the sub-layers in the active waveguide structure comprises an active region, and at least one of the sub-layers in the active waveguide structure comprises a p-contact layer.
A device of claim 1, wherein the second element comprises AlN-based material. ∗ ∗ ∗ ∗ ∗
A device comprising: first, second, third and fourth elements fabricated on a common substrate; wherein the first element comprises an active waveguide structure supporting a first optical mode, the second element comprises a passive waveguide structure sup-porting a second optical mode, the third element, at least partly butt-coupled to the first element, comprises an intermediate waveguide structure supporting intermediate optical modes, and a fourth element compris-ing TCO material that is attached to the first element; wherein third element provides a cladding for the second element; wherein, if the first optical mode differs from the second optical mode by more than a predetermined amount, a tapered waveguide structure in second element facili-tates efficient adiabatic transformation between the second optical mode and one of the intermediate optical modes; wherein no adiabatic transformation occurs between any of the intermediate optical modes and the first optical mode; and wherein mutual alignments of the first, the second and the third elements are defined using lithographic alignment marks that facilitate precise alignment between layers formed during processing steps of fabricating the first, the second and the third elements.
A device of claim 12, wherein a lower surface of the third element is planar.
The device of claim 12, wherein an interface between the first and the third elements is angled at an angle optimized to minimize reflections.
A device of claim 12, wherein the first element comprises GaN-based semicon-ductor layers.
A device of claim 12, wherein a refractive index of second element is between 1.6 and 2.2.
A device of claim 12, wherein the second element comprises SiN-based mate-rial.
Layer stacks claimed or described, ordered top of device to substrate.
heterogeneous GaN photonic integrated circuit (butt-coupled, tapered intermediate)
heterogeneous GaN photonic integrated circuit (third element as cladding for second element)
Materials described outside the worked examples.
TCO material
GaN-based semiconductor
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
refractive index of second element (passive waveguide) | 1.6–2.2 | SiN |
refractive index of third element (intermediate waveguide), lower than second element | 1.55–2.15 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 5
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,271,033 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a device according to one embodiment of the present invention, shown in cross section.
FIG. 2 (c) show three cross-sectional top-down views of devices according to some embodiments of the present invention.
FIG. 3 (b) show a cross-sectional end-on views of a device according to some embodiments of the present invention.
FIG. 4 shows a cross-sectional view of a device according to some embodiments of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising: first, second, third and fourth elements fabricated on a common substrate; wherein the first element comprises an active waveguide structure supporting a first optical mode, the second element comprises a passive waveguide structure sup-porting a second optical mode, the third element, at least partly butt-coupled to the first element, comprises an intermediate waveguide structure supporting intermediate optical modes, and a fourth element compris-ing TCO material that is attached to the first element; wherein, if the first optical mode differs from the second optical mode by more than a predetermined amount, a tapered waveguide structure in at least one of the second and third elements facilitates efficient adiabatic transformation between the second optical mode and one of the intermediate optical modes; wherein no adiabatic transformation occurs between any of the intermediate optical modes and the first optical mode; and wherein mutual alignments of the first, the second and the third elements are defined using lithographic alignment marks that facilitate precise alignment between layers formed during processing steps of fabricating the first, the second and the third elements.
A device of claim 1, wherein a lower surface of the third element is planar.
The device of claim 1, wherein an interface between the first and third elements is angled at an angle optimized to minimize reflections.
A device of claim 1, wherein the first element comprises GaN-based semicon-ductor layers.
A device of claim 1, wherein a refractive index of second element is between 1.6 and 2.2.
A device of claim 1, wherein the second element comprises SiN-based mate-rial.
A device of claim 1, wherein the first element comprising the active waveguide structure has at least three sub-layers; wherein at least one of the sub-layers in the active waveguide structure comprises a n-contact layer; and, wherein at least one of the sub-layers in the active waveguide structure comprises an active region, and at least one of the sub-layers in the active waveguide structure comprises a p-contact layer.
A device of claim 1, wherein the second element comprises AlN-based material. ∗ ∗ ∗ ∗ ∗
A device comprising: first, second, third and fourth elements fabricated on a common substrate; wherein the first element comprises an active waveguide structure supporting a first optical mode, the second element comprises a passive waveguide structure sup-porting a second optical mode, the third element, at least partly butt-coupled to the first element, comprises an intermediate waveguide structure supporting intermediate optical modes, and a fourth element compris-ing TCO material that is attached to the first element; wherein third element provides a cladding for the second element; wherein, if the first optical mode differs from the second optical mode by more than a predetermined amount, a tapered waveguide structure in second element facili-tates efficient adiabatic transformation between the second optical mode and one of the intermediate optical modes; wherein no adiabatic transformation occurs between any of the intermediate optical modes and the first optical mode; and wherein mutual alignments of the first, the second and the third elements are defined using lithographic alignment marks that facilitate precise alignment between layers formed during processing steps of fabricating the first, the second and the third elements.
A device of claim 12, wherein a lower surface of the third element is planar.
The device of claim 12, wherein an interface between the first and the third elements is angled at an angle optimized to minimize reflections.
A device of claim 12, wherein the first element comprises GaN-based semicon-ductor layers.
A device of claim 12, wherein a refractive index of second element is between 1.6 and 2.2.
A device of claim 12, wherein the second element comprises SiN-based mate-rial.
Layer stacks claimed or described, ordered top of device to substrate.
heterogeneous GaN photonic integrated circuit (butt-coupled, tapered intermediate)
heterogeneous GaN photonic integrated circuit (third element as cladding for second element)
Materials described outside the worked examples.
TCO material
GaN-based semiconductor
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
refractive index of second element (passive waveguide) | 1.6–2.2 | SiN |
refractive index of third element (intermediate waveguide), lower than second element | 1.55–2.15 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 5
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,271,033 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a device according to one embodiment of the present invention, shown in cross section.
FIG. 2 (c) show three cross-sectional top-down views of devices according to some embodiments of the present invention.
FIG. 3 (b) show a cross-sectional end-on views of a device according to some embodiments of the present invention.
FIG. 4 shows a cross-sectional view of a device according to some embodiments of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising: first, second, third and fourth elements fabricated on a common substrate; wherein the first element comprises an active waveguide structure supporting a first optical mode, the second element comprises a passive waveguide structure sup-porting a second optical mode, the third element, at least partly butt-coupled to the first element, comprises an intermediate waveguide structure supporting intermediate optical modes, and a fourth element compris-ing TCO material that is attached to the first element; wherein, if the first optical mode differs from the second optical mode by more than a predetermined amount, a tapered waveguide structure in at least one of the second and third elements facilitates efficient adiabatic transformation between the second optical mode and one of the intermediate optical modes; wherein no adiabatic transformation occurs between any of the intermediate optical modes and the first optical mode; and wherein mutual alignments of the first, the second and the third elements are defined using lithographic alignment marks that facilitate precise alignment between layers formed during processing steps of fabricating the first, the second and the third elements.
A device of claim 1, wherein a lower surface of the third element is planar.
The device of claim 1, wherein an interface between the first and third elements is angled at an angle optimized to minimize reflections.
A device of claim 1, wherein the first element comprises GaN-based semicon-ductor layers.
A device of claim 1, wherein a refractive index of second element is between 1.6 and 2.2.
A device of claim 1, wherein the second element comprises SiN-based mate-rial.
A device of claim 1, wherein the first element comprising the active waveguide structure has at least three sub-layers; wherein at least one of the sub-layers in the active waveguide structure comprises a n-contact layer; and, wherein at least one of the sub-layers in the active waveguide structure comprises an active region, and at least one of the sub-layers in the active waveguide structure comprises a p-contact layer.
A device of claim 1, wherein the second element comprises AlN-based material. ∗ ∗ ∗ ∗ ∗
A device comprising: first, second, third and fourth elements fabricated on a common substrate; wherein the first element comprises an active waveguide structure supporting a first optical mode, the second element comprises a passive waveguide structure sup-porting a second optical mode, the third element, at least partly butt-coupled to the first element, comprises an intermediate waveguide structure supporting intermediate optical modes, and a fourth element compris-ing TCO material that is attached to the first element; wherein third element provides a cladding for the second element; wherein, if the first optical mode differs from the second optical mode by more than a predetermined amount, a tapered waveguide structure in second element facili-tates efficient adiabatic transformation between the second optical mode and one of the intermediate optical modes; wherein no adiabatic transformation occurs between any of the intermediate optical modes and the first optical mode; and wherein mutual alignments of the first, the second and the third elements are defined using lithographic alignment marks that facilitate precise alignment between layers formed during processing steps of fabricating the first, the second and the third elements.
A device of claim 12, wherein a lower surface of the third element is planar.
The device of claim 12, wherein an interface between the first and the third elements is angled at an angle optimized to minimize reflections.
A device of claim 12, wherein the first element comprises GaN-based semicon-ductor layers.
A device of claim 12, wherein a refractive index of second element is between 1.6 and 2.2.
A device of claim 12, wherein the second element comprises SiN-based mate-rial.
Layer stacks claimed or described, ordered top of device to substrate.
heterogeneous GaN photonic integrated circuit (butt-coupled, tapered intermediate)
heterogeneous GaN photonic integrated circuit (third element as cladding for second element)
Materials described outside the worked examples.
TCO material
GaN-based semiconductor
GaN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
refractive index of second element (passive waveguide) | 1.6–2.2 | SiN |
refractive index of third element (intermediate waveguide), lower than second element | 1.55–2.15 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 5
Related documents with shared materials, methods, properties, or citations.
SiN
AlN-based material
AlN
SiO₂
anti-reflective coating
Si substrate
Si
sapphire substrate
refractive index of GaN (background context) | — | GaN |
refractive index of SiN (background context) | — | SiN |
refractive index of AlN (background context) | — | AlN |
Thickness | 20–400 nm | — |
Cited non-patent literature · 3
SiN
AlN-based material
AlN
SiO₂
anti-reflective coating
Si substrate
Si
sapphire substrate
refractive index of GaN (background context) | — | GaN |
refractive index of SiN (background context) | — | SiN |
refractive index of AlN (background context) | — | AlN |
Thickness | 20–400 nm | — |
Cited non-patent literature · 3
SiN
AlN-based material
AlN
SiO₂
anti-reflective coating
Si substrate
Si
sapphire substrate
refractive index of GaN (background context) | — | GaN |
refractive index of SiN (background context) | — | SiN |
refractive index of AlN (background context) | — | AlN |
Thickness | 20–400 nm | — |
Cited non-patent literature · 3
SiN
AlN-based material
AlN
SiO₂
anti-reflective coating
Si substrate
Si
sapphire substrate
refractive index of GaN (background context) | — | GaN |
refractive index of SiN (background context) | — | SiN |
refractive index of AlN (background context) | — | AlN |
Thickness | 20–400 nm | — |
Cited non-patent literature · 3