Method for performing activation of dopants in a GaN-base semiconductor layer by successive implantations and heat treatments

Claire AGRAFFEIL

Patent

Atlas literature

Patent

US 9,536,741

Method for performing activation of dopants in a GaN-base semiconductor layer by successive implantations and heat treatments

Claire AGRAFFEIL

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

12 independent · 9 dependent

1
IndependentGaN-base semiconductorelectric dopant impurities
A method for performing activation of n-type or p-type dopants in a GaN-base semiconductor layer comprises the following steps:-providing a substrate comprising a GaN-base semiconductor material layer,-performing the following successive steps at least twice: o implanting electric dopant impurities in the semiconductor material layer, o performing heat treatment so as to activate the electric dopant impurities in the semiconductor material layer, a cap layer covering the semiconductor material layer when the heat treatment is performed, wherein at least one of the heat treatment steps is performed at atmospheric pressure at a temperature from 1100CC to 13000- for a p eriod of I to 7 hours, and werein the cap laver remains uncovered du ring the heat treatmtent t-wo- impiantain#=n--steps -eft SVG 14846376.08-17-2016.IRZ₆EZW₉RXEAPX2.CLM.1.18.822.2176.1217.2222.svg 0.153 1.317 Chemistry Black and white r ie-bei-ng-separaed-y--a-ht-ea-tem---step.
1. 2
  Dependent← claim 1GaN-base semiconductorcap layer
  The dopant activation method according to claim 1, wherein the cap layer is removed after at least one of the heat treatments, and a second cap layer is then deposited on the semiconductor material layer before the next heat treatment.
2. 4
  Dependent← claim 1cap layer
  The dopant activation method according to claim 1, wherein ai iea si one of the cap layer a-nd/er- an i the second cap layer is used for several successive heat treatments, and wherein its thickness is comprised between 5 and 500 nm.
3. 11
  Dependent← claim 1
  The dopant activation method according to claim 1, wherein at least one of the heat treatment steps is a combination of at least two anneals of diﬀerent durations and temperatures. -3-Application No. 14/846,3 76
5
IndependentSiO₂Si₃N₄AlN
The dopant activation method according [oc laim 1, wherein the material of at least one of the cap layer mt andthe second cap layer is SVG 14846376.08-17-2016.IRZ₆EZW₉RXEAPX2.CLM.2.7.302.894.438.930.svg 0.12 0.453 Chemistry Black and white-selected from SVG 14846376.08-17-2016.IRZ₆EZW₉RXEAPX2.CLM.2.7.736.895.989.938.svg 0.143 0.843 Chemistry Black and white -F-AN the r o up consisting of Si 3 O z N 4. and AN.
6
Independent
The dopant activation method according to c laim 1, wherein, at each implantation step, an intermediate dose greater than 10 % of the total dose to be implanted is implanted.
7
Independent
The dopant activation method according tc laim 1, wherein at least one of the implantation steps is performed at a temperature comprised between 15 and 700 0C.
8
Independent
The dopant activation method according to c laim 1, wherein, at each new implantation step, the electric dopant impurities are implanted at a diﬀerent depth from that obtained when the previous implantation steps were performed.
9
Independent
canceled
10
Independent
The dopant activation method according to c laim 1, wherein at least one of the heat treatment steps is performed in a controlled atmosphere at a pressure of less than 15 kbar, at a temperature comprised between 1000 0 C and 1600 0 C for a period of 1 to 20 minutes.
12
IndependentMgPNCaZnC
The dopant activation method according to c laim 1, wherein the electric dopant impurities are Eesm SVG 14846376.08-17-2016.IRZ₆EZW₉RXEAPX2.CLM.3.3.1300.428.1458.464.svg 0.12 0.527 Chemistry Black and white from the _gr SVG 14846376.08-17-2016.IRZ₆EZW₉RXEAPX2.CLM.3.3.1698.440.1769.474.svg 0.113 0.237 Chemistry Black and white consi stingof M g, P, N, Ca, Zn-or Can.dC to form a p-type doping.
13
IndependentSiBeGeO
The dopant activation method according o c laim 1, wherein the electric dopant impurities are ehesen- selected from the group consisting of Si, Be, Ge, or--- and O to form an n-type doping.
14
IndependentGaN-base semiconductorelectric dopant impuritiescap layer
A method for performing activation of n-type or p-type dopants in a GaN-base semiconductor layer comprises the following steps: providing a substrate comprising a GaN-base semiconductor material layer, performing the following successive steps at least twice: implanting electric dopant impurities in the semiconductor material layer, performing heat treatment so as to activate the electric dopant impurities in the semiconductor material layer, a cap layer covering the semiconductor material layer when the heat treatment is performed, wherein the cap layer is removed after at least one of the heat treatments, and a second cap layer is then deposited on the semiconductor material layer before the next heat treatment.
1. 15
  Dependent← claim 14cap layer
  The dopant activation method according to claim 14, wherein the thickness of at least one of the cap layer and the second cap layer is comprised between 5 and 500 nm.
2. 16
  Dependent← claim 14SiO₂Si₃N₄AlN
  The dopant activation method according to claim 14, wherein the material of at least one of the cap layer and the second cap layer is selected from the group consisting of SiO 2, Si 3 N 4, and A lN. -4- Application No. 14/846,3 76
3. 17
  Dependent← claim 14
  The dopant activation method according to claim 14, wherein at least one of the heat treatment steps is a combination of at least two anneals of diﬀerent durations and temperatures.
18
IndependentGaN-base semiconductorelectric dopant impurities
A method for performing activation of n-type or p-type dopants in a GaN-base semiconductor layer comprises the following steps: providing a substrate comprising a GaN-base semiconductor material layer, performing the following successive steps at least twice: implanting electric dopant impurities in the semiconductor material layer, performing heat treatment so as to activate the electric dopant impurities in the semiconductor material layer, a cap layer covering the semiconductor material layer when the heat treatment is performed, wherein, at each new implantation step, the electric dopant impurities are implanted at a diﬀerent depth from that obtained when the previous implantation steps were performed.
1. 19
  Dependent← claim 18cap layer
  The dopant activation method according to claim 18, wherein the cap layer is removed after at least one of the heat treatments, and a second material layer before the next heat treatment.
2. 21
  Dependent← claim 18
  The dopant activation method according to treatment steps is a combination of at least two -5-cap layer is then deposited on the semiconductor claim 18, wherein, at each implantation step, an dose to be implanted is implanted. claim 18, wherein at least one of the heat anneals of diﬀerent durations and temperatures.
20
Independent
The dopant activation method according to intermediate dose greater than 10 % of the total

Materials

Materials described outside the worked examples.

GaN-base semiconductor

Semiconductor Substrate Layer

electric dopant impurities

Dopant

Process steps

Additional fabrication and treatment steps described in the patent.

Ion Implantation And Annealing

Step 1

Temperature

1100, 1300°C

Duration

60, 420 min

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	5–500 nm	—
Duration

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Method for performing activation of dopants in a GaN-base semiconductor layer by successive implantations and heat treatments | Matter42 Literature