Patent
US 10,655,243GROWTH OF EPITAXIAL GALLIUM NITRIDE MATERIAL USING A THERMALLY MATCHED SUBSTRATE
Vladimir Odnoblyudov, Cem Basceri
Quora Technology, Inc.·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,655,243Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a simplified schematic diagram illustrating an engineered substrate structure including a polycrystalline GaN core according to an embodiment of the …
FIG. 2A is a simplified schematic diagram illustrating an engineered substrate structure including a polycrystalline AlGaN core according to an embodiment of …
FIG. 3A is a simplified schematic diagram illustrating an engineered substrate structure including a polycrystalline A I N core with dopants according to an …
FIG. 4 is a simplified schematic diagram illustrating engineered layers of an engineered substrate structure according to another embodiment of the present …
FIG. 5 is a plot illustrating coefficients of thermal expansion as a function of temperature for various materials. In an engineered substrate utilizing an …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An engineered substrate comprising: a support structure comprising: a polycrystalline ceramic core; an adhesion layer coupled to the polycrystalline ceramic core; a conductive layer coupled to the adhesion layer; and a barrier layer encapsulating the conductive layer, the adhesion layer, and the polycrystalline ceramic core; a bonding layer coupled to the support structure; a substantially single crystal layer coupled to the bonding layer; and an epitaxial gallium nitride layer coupled to the substantially single crystal layer. Previously presented
The engineered substrate of claim 1 wherein the polycrystalline ceramic core includes polycrystalline gallium nitride. Original
The engineered substrate of claim 1 wherein the polycrystalline ceramic core includes polycrystalline aluminum gallium nitride. Original
The engineered substrate of claim 1 wherein the polycrystalline ceramic core includes polycrystalline aluminum nitride and one or more dopants. Original
The engineered substrate of claim 1 wherein the adhesion layer comprises a tetraethyl orthosilicate (TEOS) oxide layer encapsulating the ceramic core. Original
The engineered substrate of claim 1 wherein the barrier layer comprises a silicon nitride layer encapsulating the adhesion layer. Original
The engineered substrate of claim 1 wherein the bonding layer comprises a silicon oxide layer. Original
The engineered substrate of claim 1 wherein the epitaxial gallium nitride layer is characterized by a thickness between 10 p m and 100 pm. Original
The engineered substrate of claim I wherein a difference between a C TE profile of the polycrystalline ceramic core and a C TE profile of the epitaxial gallium nitride layer is less than 0.5 ppm/K for temperatures between 300K and 1400K. Original
- 20. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
engineered substrate
Materials described outside the worked examples.
polycrystalline ceramic core
TEOS oxide adhesion layer
conductive layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is a plot illustrating coefficients of thermal expansion as a function of temperature for various materials. In an engineered substrate utilizing an …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
CTE profile difference between polycrystalline ceramic core and epitaxial GaN layer | ≤ 0.5 ppm/K | polycrystalline ceramic coreGaN |
epitaxial GaN layer thickness (claim 16 range) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,655,243Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a simplified schematic diagram illustrating an engineered substrate structure including a polycrystalline GaN core according to an embodiment of the …
FIG. 2A is a simplified schematic diagram illustrating an engineered substrate structure including a polycrystalline AlGaN core according to an embodiment of …
FIG. 3A is a simplified schematic diagram illustrating an engineered substrate structure including a polycrystalline A I N core with dopants according to an …
FIG. 4 is a simplified schematic diagram illustrating engineered layers of an engineered substrate structure according to another embodiment of the present …
FIG. 5 is a plot illustrating coefficients of thermal expansion as a function of temperature for various materials. In an engineered substrate utilizing an …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An engineered substrate comprising: a support structure comprising: a polycrystalline ceramic core; an adhesion layer coupled to the polycrystalline ceramic core; a conductive layer coupled to the adhesion layer; and a barrier layer encapsulating the conductive layer, the adhesion layer, and the polycrystalline ceramic core; a bonding layer coupled to the support structure; a substantially single crystal layer coupled to the bonding layer; and an epitaxial gallium nitride layer coupled to the substantially single crystal layer. Previously presented
The engineered substrate of claim 1 wherein the polycrystalline ceramic core includes polycrystalline gallium nitride. Original
The engineered substrate of claim 1 wherein the polycrystalline ceramic core includes polycrystalline aluminum gallium nitride. Original
The engineered substrate of claim 1 wherein the polycrystalline ceramic core includes polycrystalline aluminum nitride and one or more dopants. Original
The engineered substrate of claim 1 wherein the adhesion layer comprises a tetraethyl orthosilicate (TEOS) oxide layer encapsulating the ceramic core. Original
The engineered substrate of claim 1 wherein the barrier layer comprises a silicon nitride layer encapsulating the adhesion layer. Original
The engineered substrate of claim 1 wherein the bonding layer comprises a silicon oxide layer. Original
The engineered substrate of claim 1 wherein the epitaxial gallium nitride layer is characterized by a thickness between 10 p m and 100 pm. Original
The engineered substrate of claim I wherein a difference between a C TE profile of the polycrystalline ceramic core and a C TE profile of the epitaxial gallium nitride layer is less than 0.5 ppm/K for temperatures between 300K and 1400K. Original
- 20. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
engineered substrate
Materials described outside the worked examples.
polycrystalline ceramic core
TEOS oxide adhesion layer
conductive layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is a plot illustrating coefficients of thermal expansion as a function of temperature for various materials. In an engineered substrate utilizing an …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
CTE profile difference between polycrystalline ceramic core and epitaxial GaN layer | ≤ 0.5 ppm/K | polycrystalline ceramic coreGaN |
epitaxial GaN layer thickness (claim 16 range) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,655,243Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a simplified schematic diagram illustrating an engineered substrate structure including a polycrystalline GaN core according to an embodiment of the …
FIG. 2A is a simplified schematic diagram illustrating an engineered substrate structure including a polycrystalline AlGaN core according to an embodiment of …
FIG. 3A is a simplified schematic diagram illustrating an engineered substrate structure including a polycrystalline A I N core with dopants according to an …
FIG. 4 is a simplified schematic diagram illustrating engineered layers of an engineered substrate structure according to another embodiment of the present …
FIG. 5 is a plot illustrating coefficients of thermal expansion as a function of temperature for various materials. In an engineered substrate utilizing an …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An engineered substrate comprising: a support structure comprising: a polycrystalline ceramic core; an adhesion layer coupled to the polycrystalline ceramic core; a conductive layer coupled to the adhesion layer; and a barrier layer encapsulating the conductive layer, the adhesion layer, and the polycrystalline ceramic core; a bonding layer coupled to the support structure; a substantially single crystal layer coupled to the bonding layer; and an epitaxial gallium nitride layer coupled to the substantially single crystal layer. Previously presented
The engineered substrate of claim 1 wherein the polycrystalline ceramic core includes polycrystalline gallium nitride. Original
The engineered substrate of claim 1 wherein the polycrystalline ceramic core includes polycrystalline aluminum gallium nitride. Original
The engineered substrate of claim 1 wherein the polycrystalline ceramic core includes polycrystalline aluminum nitride and one or more dopants. Original
The engineered substrate of claim 1 wherein the adhesion layer comprises a tetraethyl orthosilicate (TEOS) oxide layer encapsulating the ceramic core. Original
The engineered substrate of claim 1 wherein the barrier layer comprises a silicon nitride layer encapsulating the adhesion layer. Original
The engineered substrate of claim 1 wherein the bonding layer comprises a silicon oxide layer. Original
The engineered substrate of claim 1 wherein the epitaxial gallium nitride layer is characterized by a thickness between 10 p m and 100 pm. Original
The engineered substrate of claim I wherein a difference between a C TE profile of the polycrystalline ceramic core and a C TE profile of the epitaxial gallium nitride layer is less than 0.5 ppm/K for temperatures between 300K and 1400K. Original
- 20. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
engineered substrate
Materials described outside the worked examples.
polycrystalline ceramic core
TEOS oxide adhesion layer
conductive layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is a plot illustrating coefficients of thermal expansion as a function of temperature for various materials. In an engineered substrate utilizing an …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
CTE profile difference between polycrystalline ceramic core and epitaxial GaN layer | ≤ 0.5 ppm/K | polycrystalline ceramic coreGaN |
epitaxial GaN layer thickness (claim 16 range) |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,655,243Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 A is a simplified schematic diagram illustrating an engineered substrate structure including a polycrystalline GaN core according to an embodiment of the …
FIG. 2A is a simplified schematic diagram illustrating an engineered substrate structure including a polycrystalline AlGaN core according to an embodiment of …
FIG. 3A is a simplified schematic diagram illustrating an engineered substrate structure including a polycrystalline A I N core with dopants according to an …
FIG. 4 is a simplified schematic diagram illustrating engineered layers of an engineered substrate structure according to another embodiment of the present …
FIG. 5 is a plot illustrating coefficients of thermal expansion as a function of temperature for various materials. In an engineered substrate utilizing an …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An engineered substrate comprising: a support structure comprising: a polycrystalline ceramic core; an adhesion layer coupled to the polycrystalline ceramic core; a conductive layer coupled to the adhesion layer; and a barrier layer encapsulating the conductive layer, the adhesion layer, and the polycrystalline ceramic core; a bonding layer coupled to the support structure; a substantially single crystal layer coupled to the bonding layer; and an epitaxial gallium nitride layer coupled to the substantially single crystal layer. Previously presented
The engineered substrate of claim 1 wherein the polycrystalline ceramic core includes polycrystalline gallium nitride. Original
The engineered substrate of claim 1 wherein the polycrystalline ceramic core includes polycrystalline aluminum gallium nitride. Original
The engineered substrate of claim 1 wherein the polycrystalline ceramic core includes polycrystalline aluminum nitride and one or more dopants. Original
The engineered substrate of claim 1 wherein the adhesion layer comprises a tetraethyl orthosilicate (TEOS) oxide layer encapsulating the ceramic core. Original
The engineered substrate of claim 1 wherein the barrier layer comprises a silicon nitride layer encapsulating the adhesion layer. Original
The engineered substrate of claim 1 wherein the bonding layer comprises a silicon oxide layer. Original
The engineered substrate of claim 1 wherein the epitaxial gallium nitride layer is characterized by a thickness between 10 p m and 100 pm. Original
The engineered substrate of claim I wherein a difference between a C TE profile of the polycrystalline ceramic core and a C TE profile of the epitaxial gallium nitride layer is less than 0.5 ppm/K for temperatures between 300K and 1400K. Original
- 20. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
engineered substrate
Materials described outside the worked examples.
polycrystalline ceramic core
TEOS oxide adhesion layer
conductive layer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5 is a plot illustrating coefficients of thermal expansion as a function of temperature for various materials. In an engineered substrate utilizing an …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
CTE profile difference between polycrystalline ceramic core and epitaxial GaN layer | ≤ 0.5 ppm/K | polycrystalline ceramic coreGaN |
epitaxial GaN layer thickness (claim 16 range) |
Related documents with shared materials, methods, properties, or citations.
silicon nitride barrier layer
Si₃N₄
silicon oxide bonding layer
SiO₂
epitaxial gallium nitride layer
GaN
single crystal silicon layer
Si
polycrystalline aluminum gallium nitride
AlGaN
polycrystalline aluminum nitride with dopants
AlN
titanium dopant
Ti
titanium nitride dopant
TiN
| 10–100 µm |
GaN |
epitaxial GaN layer thickness (claim 17 narrowed range) | 40–80 µm | GaN |
TEOS oxide adhesion layer thickness | 1000 Å | TEOS oxide adhesion layer |
silicon nitride barrier layer thickness | 4000 Å | Si₃N₄ |
Temperature | 700–1400 K | — |
Temperature | 300–700 K | — |
Temperature | 1000–1400 K | — |
Temperature | 300–1000 K | — |
Temperature | 300–1400 K | — |
Temperature | 300–1200 K | — |
silicon nitride barrier layer
Si₃N₄
silicon oxide bonding layer
SiO₂
epitaxial gallium nitride layer
GaN
single crystal silicon layer
Si
polycrystalline aluminum gallium nitride
AlGaN
polycrystalline aluminum nitride with dopants
AlN
titanium dopant
Ti
titanium nitride dopant
TiN
| 10–100 µm |
GaN |
epitaxial GaN layer thickness (claim 17 narrowed range) | 40–80 µm | GaN |
TEOS oxide adhesion layer thickness | 1000 Å | TEOS oxide adhesion layer |
silicon nitride barrier layer thickness | 4000 Å | Si₃N₄ |
Temperature | 700–1400 K | — |
Temperature | 300–700 K | — |
Temperature | 1000–1400 K | — |
Temperature | 300–1000 K | — |
Temperature | 300–1400 K | — |
Temperature | 300–1200 K | — |
silicon nitride barrier layer
Si₃N₄
silicon oxide bonding layer
SiO₂
epitaxial gallium nitride layer
GaN
single crystal silicon layer
Si
polycrystalline aluminum gallium nitride
AlGaN
polycrystalline aluminum nitride with dopants
AlN
titanium dopant
Ti
titanium nitride dopant
TiN
| 10–100 µm |
GaN |
epitaxial GaN layer thickness (claim 17 narrowed range) | 40–80 µm | GaN |
TEOS oxide adhesion layer thickness | 1000 Å | TEOS oxide adhesion layer |
silicon nitride barrier layer thickness | 4000 Å | Si₃N₄ |
Temperature | 700–1400 K | — |
Temperature | 300–700 K | — |
Temperature | 1000–1400 K | — |
Temperature | 300–1000 K | — |
Temperature | 300–1400 K | — |
Temperature | 300–1200 K | — |
silicon nitride barrier layer
Si₃N₄
silicon oxide bonding layer
SiO₂
epitaxial gallium nitride layer
GaN
single crystal silicon layer
Si
polycrystalline aluminum gallium nitride
AlGaN
polycrystalline aluminum nitride with dopants
AlN
titanium dopant
Ti
titanium nitride dopant
TiN
| 10–100 µm |
GaN |
epitaxial GaN layer thickness (claim 17 narrowed range) | 40–80 µm | GaN |
TEOS oxide adhesion layer thickness | 1000 Å | TEOS oxide adhesion layer |
silicon nitride barrier layer thickness | 4000 Å | Si₃N₄ |
Temperature | 700–1400 K | — |
Temperature | 300–700 K | — |
Temperature | 1000–1400 K | — |
Temperature | 300–1000 K | — |
Temperature | 300–1400 K | — |
Temperature | 300–1200 K | — |