Patent
Atlas literature
Patent
US 11,854,977 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a top-plan view of part of an electronic device, according to an embodiment of the present invention;
FIG. 2, alternative embodiments according to respective aspects of the present invention; and
FIGS. 3 and 4 are respective lateral cross sections of the device of
FIG. 4 relates to a section where metal vias 25 between the first metal layer MTL1 and the second metal layer MTL2, and contacts 18 between the source …
FIG. 5 shows a portion of the device of
FIG. 6 is an equivalent circuit model of the portion of the device of
FIG. 7 shows a portion of the device of
FIGS. 8A, 8B show using the same simplified view of
FIGS. 9A, 9B show further embodiments according to respective aspects of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electronic device, comprising: a structural body including a substrate and a layer of gallium nitride on the substrate; a source terminal, a drain terminal, and a gate terminal on top of and in contact with a top surface of the layer of gallium nitride; a plurality of source metal strips coupled to the source terminal, the plurality of source metal strips including a first source metal strip and a second source metal strip; a plurality of drain metal strips coupled to the drain terminal, the plurality of drain metal strips including a first drain metal strip and a second drain metal strip, the first drain metal strip being between the first and second source metal strips, the first drain metal strip having a first end spaced from a second end along a first direc-tion, the first end of the first drain metal strip being aligned with a central region of the first source metal strip along a second direction that is transverse to the first direction; a trapezoidal source metal bus on the plurality of source metal strips and on the plurality of drain metal strips; and a trapezoidal drain metal bus spaced from the source metal bus, the drain metal bus being on the plurality of source metal strips and on the plurality of drain metal strips; an insulating layer that separates the source metal bus from the drain metal bus: a first conductive pad electrically coupled to the source metal bus; and a second conductive pad electrically coupled to the drain metal bus.
The electronic device according to claim 1, wherein the insulating layer spaces the source metal bus from the adja-cent drain metal bus by a distance which satisfies the following constraint: dgap>∆V/Eds wherein: ∆V is a difference of potential between the first and second conductive pads; and Eds is a dielectric strength of the insulating layer.
The electronic device according to claim 1, wherein the first end of the first drain metal strip is aligned with a central region of the second source metal strip along the second direction.
The electronic device according to claim 1, wherein the first conductive pad and the second conductive pad are spaced from each other by the source metal bus and the drain metal bus.
The electronic device according to claim 1, wherein the first conductive pad includes a first pad that is positioned within the source metal bus.
An electronic device, comprising: a structural body including a semiconductor layer, the semiconductor layer including a first active region and a second active region; a plurality of source metal strips in a first metal level, each source metal strip having a strip-like shape with a main direction of extension along a first axis, the plurality of source metal strips including: a first source strip in the first active region; a second source strip in the second active region, the second source strip being spaced from the first source strip along the first axis; a plurality of drain metal strips in the first metal level, each drain metal strip having a strip-like shape with a main direction of extension along the first axis, the plurality of drain metal strips including: a drain strip that extends from the first active region to the second active region, the drain strip being spaced from the first source strip and the second source strip along a second axis that is transverse to the first axis; an insulating layer on the plurality of source metal strips and on the plurality of drain metal strips; a source metal bus in a second metal level and electrically coupled to the first source strip and the second source strip, the source metal bus overlapping the first and second active regions; a conductive source pad electrically coupled to the source metal bus; a drain metal bus in the second metal level and electrically coupled to the drain strip, the insulating layer separat-ing the drain metal bus from the source metal bus, the drain metal bus overlapping the second active region; and a conductive drain pad electrically coupled to the drain metal bus, wherein: the source metal bus has a first width, taken along the first axis, which decreases moving away from the conductive source pad along the second axis, the drain metal bus has a second width, taken along the first axis, which decreases moving away from the conductive drain pad along the second axis.
The electronic device according to claim 9, wherein the insulating layer spaces the source metal bus from the adjacent drain metal bus by a distance which satisfies the following constraint: dgap>∆V/Eds wherein: ∆V is a difference of potential between the conductive drain and source pads; and Eds is a dielectric strength of the insulating layer.
The electronic device according to claim 9, wherein each source and drain metal bus has a trapezoidal shape.
The electronic device according to claim 9, wherein the second source strip being spaced from the first source strip along the first axis with a first distance, the first distance is aligned with a central region of the drain strip along the second axis.
The electronic device according to claim 9, wherein the conductive drain pad is spaced from the conductive source pad by the source metal bus.
The electronic device according to claim 9, wherein the conductive source pad includes a source pad element that is positioned within the source metal bus.
The electronic device according to claim 9, wherein the semiconductor layer including a third active region, the drain metal bus overlapping the third active region.
The electronic device according to claim 9, wherein the drain metal bus has an hourglass shape.
An electronic device, comprising: 20 a structural body including a semiconductor layer; a plurality of source metal strips in a first metal level on the semiconductor layer; a plurality of drain metal strips in the first metal level on the semiconductor layer; a first drain pad spaced from a second drain pad along a first direction; a source pad positioned between the first and second drain pads along a second direction transverse to the first direction; a source metal bus in a second metal level, the source pad coupled to a central region of the source metal bus; a drain metal bus in the second metal level and extending between the first and second drain pads; and an insulating layer that separates the source metal bus from the drain metal bus, the insulating layer com-pletely surrounding the source metal bus, the insulating layer extending from the first drain pad to the second drain pad.
The electronic device according to claim 18, wherein the source metal bus has is one from among: trapezoidal shape, bell shape, and staircase shape.
The electronic device according to claim 18, wherein each of the plurality of source metal strips being spaced from one another along the first direction with a plurality of gaps, each of the plurality of gaps is aligned with a central region of one of the plurality of drain metal strips along the second direction. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based lateral-conduction electronic device with trapezoidal source and drain metal buses (claim 1)
GaN-based lateral-conduction electronic device with variable-width source and drain metal buses (claim 9)
Materials described outside the worked examples.
gallium nitride
GaN
silicon
Si
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
maximum current density before electromigration for AlCu metal bus (thickness ~4.5 µm) | 9 mA/µm | AlCu |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 5
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,854,977 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a top-plan view of part of an electronic device, according to an embodiment of the present invention;
FIG. 2, alternative embodiments according to respective aspects of the present invention; and
FIGS. 3 and 4 are respective lateral cross sections of the device of
FIG. 4 relates to a section where metal vias 25 between the first metal layer MTL1 and the second metal layer MTL2, and contacts 18 between the source …
FIG. 5 shows a portion of the device of
FIG. 6 is an equivalent circuit model of the portion of the device of
FIG. 7 shows a portion of the device of
FIGS. 8A, 8B show using the same simplified view of
FIGS. 9A, 9B show further embodiments according to respective aspects of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electronic device, comprising: a structural body including a substrate and a layer of gallium nitride on the substrate; a source terminal, a drain terminal, and a gate terminal on top of and in contact with a top surface of the layer of gallium nitride; a plurality of source metal strips coupled to the source terminal, the plurality of source metal strips including a first source metal strip and a second source metal strip; a plurality of drain metal strips coupled to the drain terminal, the plurality of drain metal strips including a first drain metal strip and a second drain metal strip, the first drain metal strip being between the first and second source metal strips, the first drain metal strip having a first end spaced from a second end along a first direc-tion, the first end of the first drain metal strip being aligned with a central region of the first source metal strip along a second direction that is transverse to the first direction; a trapezoidal source metal bus on the plurality of source metal strips and on the plurality of drain metal strips; and a trapezoidal drain metal bus spaced from the source metal bus, the drain metal bus being on the plurality of source metal strips and on the plurality of drain metal strips; an insulating layer that separates the source metal bus from the drain metal bus: a first conductive pad electrically coupled to the source metal bus; and a second conductive pad electrically coupled to the drain metal bus.
The electronic device according to claim 1, wherein the insulating layer spaces the source metal bus from the adja-cent drain metal bus by a distance which satisfies the following constraint: dgap>∆V/Eds wherein: ∆V is a difference of potential between the first and second conductive pads; and Eds is a dielectric strength of the insulating layer.
The electronic device according to claim 1, wherein the first end of the first drain metal strip is aligned with a central region of the second source metal strip along the second direction.
The electronic device according to claim 1, wherein the first conductive pad and the second conductive pad are spaced from each other by the source metal bus and the drain metal bus.
The electronic device according to claim 1, wherein the first conductive pad includes a first pad that is positioned within the source metal bus.
An electronic device, comprising: a structural body including a semiconductor layer, the semiconductor layer including a first active region and a second active region; a plurality of source metal strips in a first metal level, each source metal strip having a strip-like shape with a main direction of extension along a first axis, the plurality of source metal strips including: a first source strip in the first active region; a second source strip in the second active region, the second source strip being spaced from the first source strip along the first axis; a plurality of drain metal strips in the first metal level, each drain metal strip having a strip-like shape with a main direction of extension along the first axis, the plurality of drain metal strips including: a drain strip that extends from the first active region to the second active region, the drain strip being spaced from the first source strip and the second source strip along a second axis that is transverse to the first axis; an insulating layer on the plurality of source metal strips and on the plurality of drain metal strips; a source metal bus in a second metal level and electrically coupled to the first source strip and the second source strip, the source metal bus overlapping the first and second active regions; a conductive source pad electrically coupled to the source metal bus; a drain metal bus in the second metal level and electrically coupled to the drain strip, the insulating layer separat-ing the drain metal bus from the source metal bus, the drain metal bus overlapping the second active region; and a conductive drain pad electrically coupled to the drain metal bus, wherein: the source metal bus has a first width, taken along the first axis, which decreases moving away from the conductive source pad along the second axis, the drain metal bus has a second width, taken along the first axis, which decreases moving away from the conductive drain pad along the second axis.
The electronic device according to claim 9, wherein the insulating layer spaces the source metal bus from the adjacent drain metal bus by a distance which satisfies the following constraint: dgap>∆V/Eds wherein: ∆V is a difference of potential between the conductive drain and source pads; and Eds is a dielectric strength of the insulating layer.
The electronic device according to claim 9, wherein each source and drain metal bus has a trapezoidal shape.
The electronic device according to claim 9, wherein the second source strip being spaced from the first source strip along the first axis with a first distance, the first distance is aligned with a central region of the drain strip along the second axis.
The electronic device according to claim 9, wherein the conductive drain pad is spaced from the conductive source pad by the source metal bus.
The electronic device according to claim 9, wherein the conductive source pad includes a source pad element that is positioned within the source metal bus.
The electronic device according to claim 9, wherein the semiconductor layer including a third active region, the drain metal bus overlapping the third active region.
The electronic device according to claim 9, wherein the drain metal bus has an hourglass shape.
An electronic device, comprising: 20 a structural body including a semiconductor layer; a plurality of source metal strips in a first metal level on the semiconductor layer; a plurality of drain metal strips in the first metal level on the semiconductor layer; a first drain pad spaced from a second drain pad along a first direction; a source pad positioned between the first and second drain pads along a second direction transverse to the first direction; a source metal bus in a second metal level, the source pad coupled to a central region of the source metal bus; a drain metal bus in the second metal level and extending between the first and second drain pads; and an insulating layer that separates the source metal bus from the drain metal bus, the insulating layer com-pletely surrounding the source metal bus, the insulating layer extending from the first drain pad to the second drain pad.
The electronic device according to claim 18, wherein the source metal bus has is one from among: trapezoidal shape, bell shape, and staircase shape.
The electronic device according to claim 18, wherein each of the plurality of source metal strips being spaced from one another along the first direction with a plurality of gaps, each of the plurality of gaps is aligned with a central region of one of the plurality of drain metal strips along the second direction. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based lateral-conduction electronic device with trapezoidal source and drain metal buses (claim 1)
GaN-based lateral-conduction electronic device with variable-width source and drain metal buses (claim 9)
Materials described outside the worked examples.
gallium nitride
GaN
silicon
Si
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
maximum current density before electromigration for AlCu metal bus (thickness ~4.5 µm) | 9 mA/µm | AlCu |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 5
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,854,977 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a top-plan view of part of an electronic device, according to an embodiment of the present invention;
FIG. 2, alternative embodiments according to respective aspects of the present invention; and
FIGS. 3 and 4 are respective lateral cross sections of the device of
FIG. 4 relates to a section where metal vias 25 between the first metal layer MTL1 and the second metal layer MTL2, and contacts 18 between the source …
FIG. 5 shows a portion of the device of
FIG. 6 is an equivalent circuit model of the portion of the device of
FIG. 7 shows a portion of the device of
FIGS. 8A, 8B show using the same simplified view of
FIGS. 9A, 9B show further embodiments according to respective aspects of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electronic device, comprising: a structural body including a substrate and a layer of gallium nitride on the substrate; a source terminal, a drain terminal, and a gate terminal on top of and in contact with a top surface of the layer of gallium nitride; a plurality of source metal strips coupled to the source terminal, the plurality of source metal strips including a first source metal strip and a second source metal strip; a plurality of drain metal strips coupled to the drain terminal, the plurality of drain metal strips including a first drain metal strip and a second drain metal strip, the first drain metal strip being between the first and second source metal strips, the first drain metal strip having a first end spaced from a second end along a first direc-tion, the first end of the first drain metal strip being aligned with a central region of the first source metal strip along a second direction that is transverse to the first direction; a trapezoidal source metal bus on the plurality of source metal strips and on the plurality of drain metal strips; and a trapezoidal drain metal bus spaced from the source metal bus, the drain metal bus being on the plurality of source metal strips and on the plurality of drain metal strips; an insulating layer that separates the source metal bus from the drain metal bus: a first conductive pad electrically coupled to the source metal bus; and a second conductive pad electrically coupled to the drain metal bus.
The electronic device according to claim 1, wherein the insulating layer spaces the source metal bus from the adja-cent drain metal bus by a distance which satisfies the following constraint: dgap>∆V/Eds wherein: ∆V is a difference of potential between the first and second conductive pads; and Eds is a dielectric strength of the insulating layer.
The electronic device according to claim 1, wherein the first end of the first drain metal strip is aligned with a central region of the second source metal strip along the second direction.
The electronic device according to claim 1, wherein the first conductive pad and the second conductive pad are spaced from each other by the source metal bus and the drain metal bus.
The electronic device according to claim 1, wherein the first conductive pad includes a first pad that is positioned within the source metal bus.
An electronic device, comprising: a structural body including a semiconductor layer, the semiconductor layer including a first active region and a second active region; a plurality of source metal strips in a first metal level, each source metal strip having a strip-like shape with a main direction of extension along a first axis, the plurality of source metal strips including: a first source strip in the first active region; a second source strip in the second active region, the second source strip being spaced from the first source strip along the first axis; a plurality of drain metal strips in the first metal level, each drain metal strip having a strip-like shape with a main direction of extension along the first axis, the plurality of drain metal strips including: a drain strip that extends from the first active region to the second active region, the drain strip being spaced from the first source strip and the second source strip along a second axis that is transverse to the first axis; an insulating layer on the plurality of source metal strips and on the plurality of drain metal strips; a source metal bus in a second metal level and electrically coupled to the first source strip and the second source strip, the source metal bus overlapping the first and second active regions; a conductive source pad electrically coupled to the source metal bus; a drain metal bus in the second metal level and electrically coupled to the drain strip, the insulating layer separat-ing the drain metal bus from the source metal bus, the drain metal bus overlapping the second active region; and a conductive drain pad electrically coupled to the drain metal bus, wherein: the source metal bus has a first width, taken along the first axis, which decreases moving away from the conductive source pad along the second axis, the drain metal bus has a second width, taken along the first axis, which decreases moving away from the conductive drain pad along the second axis.
The electronic device according to claim 9, wherein the insulating layer spaces the source metal bus from the adjacent drain metal bus by a distance which satisfies the following constraint: dgap>∆V/Eds wherein: ∆V is a difference of potential between the conductive drain and source pads; and Eds is a dielectric strength of the insulating layer.
The electronic device according to claim 9, wherein each source and drain metal bus has a trapezoidal shape.
The electronic device according to claim 9, wherein the second source strip being spaced from the first source strip along the first axis with a first distance, the first distance is aligned with a central region of the drain strip along the second axis.
The electronic device according to claim 9, wherein the conductive drain pad is spaced from the conductive source pad by the source metal bus.
The electronic device according to claim 9, wherein the conductive source pad includes a source pad element that is positioned within the source metal bus.
The electronic device according to claim 9, wherein the semiconductor layer including a third active region, the drain metal bus overlapping the third active region.
The electronic device according to claim 9, wherein the drain metal bus has an hourglass shape.
An electronic device, comprising: 20 a structural body including a semiconductor layer; a plurality of source metal strips in a first metal level on the semiconductor layer; a plurality of drain metal strips in the first metal level on the semiconductor layer; a first drain pad spaced from a second drain pad along a first direction; a source pad positioned between the first and second drain pads along a second direction transverse to the first direction; a source metal bus in a second metal level, the source pad coupled to a central region of the source metal bus; a drain metal bus in the second metal level and extending between the first and second drain pads; and an insulating layer that separates the source metal bus from the drain metal bus, the insulating layer com-pletely surrounding the source metal bus, the insulating layer extending from the first drain pad to the second drain pad.
The electronic device according to claim 18, wherein the source metal bus has is one from among: trapezoidal shape, bell shape, and staircase shape.
The electronic device according to claim 18, wherein each of the plurality of source metal strips being spaced from one another along the first direction with a plurality of gaps, each of the plurality of gaps is aligned with a central region of one of the plurality of drain metal strips along the second direction. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based lateral-conduction electronic device with trapezoidal source and drain metal buses (claim 1)
GaN-based lateral-conduction electronic device with variable-width source and drain metal buses (claim 9)
Materials described outside the worked examples.
gallium nitride
GaN
silicon
Si
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
maximum current density before electromigration for AlCu metal bus (thickness ~4.5 µm) | 9 mA/µm | AlCu |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 5
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,854,977 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a top-plan view of part of an electronic device, according to an embodiment of the present invention;
FIG. 2, alternative embodiments according to respective aspects of the present invention; and
FIGS. 3 and 4 are respective lateral cross sections of the device of
FIG. 4 relates to a section where metal vias 25 between the first metal layer MTL1 and the second metal layer MTL2, and contacts 18 between the source …
FIG. 5 shows a portion of the device of
FIG. 6 is an equivalent circuit model of the portion of the device of
FIG. 7 shows a portion of the device of
FIGS. 8A, 8B show using the same simplified view of
FIGS. 9A, 9B show further embodiments according to respective aspects of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electronic device, comprising: a structural body including a substrate and a layer of gallium nitride on the substrate; a source terminal, a drain terminal, and a gate terminal on top of and in contact with a top surface of the layer of gallium nitride; a plurality of source metal strips coupled to the source terminal, the plurality of source metal strips including a first source metal strip and a second source metal strip; a plurality of drain metal strips coupled to the drain terminal, the plurality of drain metal strips including a first drain metal strip and a second drain metal strip, the first drain metal strip being between the first and second source metal strips, the first drain metal strip having a first end spaced from a second end along a first direc-tion, the first end of the first drain metal strip being aligned with a central region of the first source metal strip along a second direction that is transverse to the first direction; a trapezoidal source metal bus on the plurality of source metal strips and on the plurality of drain metal strips; and a trapezoidal drain metal bus spaced from the source metal bus, the drain metal bus being on the plurality of source metal strips and on the plurality of drain metal strips; an insulating layer that separates the source metal bus from the drain metal bus: a first conductive pad electrically coupled to the source metal bus; and a second conductive pad electrically coupled to the drain metal bus.
The electronic device according to claim 1, wherein the insulating layer spaces the source metal bus from the adja-cent drain metal bus by a distance which satisfies the following constraint: dgap>∆V/Eds wherein: ∆V is a difference of potential between the first and second conductive pads; and Eds is a dielectric strength of the insulating layer.
The electronic device according to claim 1, wherein the first end of the first drain metal strip is aligned with a central region of the second source metal strip along the second direction.
The electronic device according to claim 1, wherein the first conductive pad and the second conductive pad are spaced from each other by the source metal bus and the drain metal bus.
The electronic device according to claim 1, wherein the first conductive pad includes a first pad that is positioned within the source metal bus.
An electronic device, comprising: a structural body including a semiconductor layer, the semiconductor layer including a first active region and a second active region; a plurality of source metal strips in a first metal level, each source metal strip having a strip-like shape with a main direction of extension along a first axis, the plurality of source metal strips including: a first source strip in the first active region; a second source strip in the second active region, the second source strip being spaced from the first source strip along the first axis; a plurality of drain metal strips in the first metal level, each drain metal strip having a strip-like shape with a main direction of extension along the first axis, the plurality of drain metal strips including: a drain strip that extends from the first active region to the second active region, the drain strip being spaced from the first source strip and the second source strip along a second axis that is transverse to the first axis; an insulating layer on the plurality of source metal strips and on the plurality of drain metal strips; a source metal bus in a second metal level and electrically coupled to the first source strip and the second source strip, the source metal bus overlapping the first and second active regions; a conductive source pad electrically coupled to the source metal bus; a drain metal bus in the second metal level and electrically coupled to the drain strip, the insulating layer separat-ing the drain metal bus from the source metal bus, the drain metal bus overlapping the second active region; and a conductive drain pad electrically coupled to the drain metal bus, wherein: the source metal bus has a first width, taken along the first axis, which decreases moving away from the conductive source pad along the second axis, the drain metal bus has a second width, taken along the first axis, which decreases moving away from the conductive drain pad along the second axis.
The electronic device according to claim 9, wherein the insulating layer spaces the source metal bus from the adjacent drain metal bus by a distance which satisfies the following constraint: dgap>∆V/Eds wherein: ∆V is a difference of potential between the conductive drain and source pads; and Eds is a dielectric strength of the insulating layer.
The electronic device according to claim 9, wherein each source and drain metal bus has a trapezoidal shape.
The electronic device according to claim 9, wherein the second source strip being spaced from the first source strip along the first axis with a first distance, the first distance is aligned with a central region of the drain strip along the second axis.
The electronic device according to claim 9, wherein the conductive drain pad is spaced from the conductive source pad by the source metal bus.
The electronic device according to claim 9, wherein the conductive source pad includes a source pad element that is positioned within the source metal bus.
The electronic device according to claim 9, wherein the semiconductor layer including a third active region, the drain metal bus overlapping the third active region.
The electronic device according to claim 9, wherein the drain metal bus has an hourglass shape.
An electronic device, comprising: 20 a structural body including a semiconductor layer; a plurality of source metal strips in a first metal level on the semiconductor layer; a plurality of drain metal strips in the first metal level on the semiconductor layer; a first drain pad spaced from a second drain pad along a first direction; a source pad positioned between the first and second drain pads along a second direction transverse to the first direction; a source metal bus in a second metal level, the source pad coupled to a central region of the source metal bus; a drain metal bus in the second metal level and extending between the first and second drain pads; and an insulating layer that separates the source metal bus from the drain metal bus, the insulating layer com-pletely surrounding the source metal bus, the insulating layer extending from the first drain pad to the second drain pad.
The electronic device according to claim 18, wherein the source metal bus has is one from among: trapezoidal shape, bell shape, and staircase shape.
The electronic device according to claim 18, wherein each of the plurality of source metal strips being spaced from one another along the first direction with a plurality of gaps, each of the plurality of gaps is aligned with a central region of one of the plurality of drain metal strips along the second direction. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based lateral-conduction electronic device with trapezoidal source and drain metal buses (claim 1)
GaN-based lateral-conduction electronic device with variable-width source and drain metal buses (claim 9)
Materials described outside the worked examples.
gallium nitride
GaN
silicon
Si
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
maximum current density before electromigration for AlCu metal bus (thickness ~4.5 µm) | 9 mA/µm | AlCu |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 5
Related documents with shared materials, methods, properties, or citations.
Electronic device with insulating layer completely surrounding source metal bus (claim 18)
GaN-based lateral power device (described embodiment)
AlCu
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
| ≥ 1100 µm |
| — |
Thickness | ≥ 16 µm | — |
Thickness | ≥ 1.3 µm | — |
Cited non-patent literature · 3
Electronic device with insulating layer completely surrounding source metal bus (claim 18)
GaN-based lateral power device (described embodiment)
AlCu
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
| ≥ 1100 µm |
| — |
Thickness | ≥ 16 µm | — |
Thickness | ≥ 1.3 µm | — |
Cited non-patent literature · 3
Electronic device with insulating layer completely surrounding source metal bus (claim 18)
GaN-based lateral power device (described embodiment)
AlCu
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
| ≥ 1100 µm |
| — |
Thickness | ≥ 16 µm | — |
Thickness | ≥ 1.3 µm | — |
Cited non-patent literature · 3
Electronic device with insulating layer completely surrounding source metal bus (claim 18)
GaN-based lateral power device (described embodiment)
AlCu
silicon dioxide
SiO₂
silicon nitride
Si₃N₄
| ≥ 1100 µm |
| — |
Thickness | ≥ 16 µm | — |
Thickness | ≥ 1.3 µm | — |
Cited non-patent literature · 3
