Patent
US 8,304,809OF THE INVENTION KC-1016 GaN-BASED SEMICONDUCTOR DEVICE AND METHOD OF
Shusuke Kaya
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,304,809Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based semiconductor device, comprising: a silicon substrate; an active layer of GaN-based semiconductor formed on the silicon substrate s a trench formed in the active layer, the trench [[and]] extending from a top surface of the active layer to a depth reaching the silicon substrate; a first electrode formed on an internal wall surface of the trench, the first electrode extending so that the first electrode etends from the top surface of the active layer to the silicon substrate, [[said]] t he first electrode being formed of [[a]] metal in direct eapableef-being-in ohmic contact with both the silicon substrate and the active layer; a second electrode formed on the active layer to define a current path sO that a cuFFent flows between the first electrode and the second electrode via the active layer in an on-state of the device; and a bottom electrode formed on a bottom surface of the silicon substrate, the bottom electrode defining a bonding pad for the first electrode.
The GaN-based semiconductor device according to claim 1, further comprising: an insulating film formed on the active layer, the insulating film [[and]] having a th r ough hole; [[,]] and a pad electrode formed on a part of the insulating film, the pad electrode [[and]] extending 9 Serial No. 12/292,164 inside the through hole to be electrically connected to se-tha the second electrode, the pad electrode defining a bonding pad for the second electrode is electrically connected to the pad.
The GaN-based semiconductor device according to claim 1, wherein [[said]] the first electrode includes a titanium layer in direct ohmic contact with both the silicon substrate and the active layer.
The GaN-based semiconductor device according to claim 1, wherein [[said]] the silicon substrate has an impurity concentration of not less than 5x1019 cm⁻³ and not greater than 1x10 21 cm -3.
The GaN-based semiconductor device according to claim 1, being a field effect transistor futhe+ comprising: a gate electrode; [[,]] a source electrode defined by the [[said]] first electrode; and functioning-as-a-soure a drain electrode defined by the second electrode s o that the GaN based se mico nd uctor devie fun c t i ons as a field effect tranis tor.
The GaN-based semiconductor device according to claim 1, 10 Serial No. 12/292,164 wherein [[said]] the active layer includes a first GaN-based semiconductor layer and a second GaN-based semiconductor layer having a band-gap energy greater than that of the first GaN-based semiconductor layer.
The GaN-based semiconductor device according to claim 1, being a Schottky barrier diode, wherein [[said]] t he second electrode is formed of [[a]] material e apab le-ef- being in Schottky contact with the active layer so that the GaN base semicondutoi
The GaN-based semiconductor device according to claim 1, further comprising an insulating layer formed on the internal wall surface of the trench, wherein [[said]] t he first electrode [[being]] is formed on the insulating layer, and the insulating layer electrically insulates the first electrode from the active layer along the internal wall surface.
The GaN-based semiconductor device according to claim 1, wherein the trench is tapered toward the bottom surface of the substrate.
The GaN-based semiconductor device according to claim 1, wherein the first and second electrodes include interdigitating fingers.
-13.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor device with trench first electrode
GaN-based field effect transistor (HFET/HEMT)
Materials described outside the worked examples.
silicon substrate
Si
GaN-based semiconductor active layer
metal for first electrode (ohmic contact)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
two-dimensional electron gas carrier mechanism | — | GaNAlGaN |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,304,809Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based semiconductor device, comprising: a silicon substrate; an active layer of GaN-based semiconductor formed on the silicon substrate s a trench formed in the active layer, the trench [[and]] extending from a top surface of the active layer to a depth reaching the silicon substrate; a first electrode formed on an internal wall surface of the trench, the first electrode extending so that the first electrode etends from the top surface of the active layer to the silicon substrate, [[said]] t he first electrode being formed of [[a]] metal in direct eapableef-being-in ohmic contact with both the silicon substrate and the active layer; a second electrode formed on the active layer to define a current path sO that a cuFFent flows between the first electrode and the second electrode via the active layer in an on-state of the device; and a bottom electrode formed on a bottom surface of the silicon substrate, the bottom electrode defining a bonding pad for the first electrode.
The GaN-based semiconductor device according to claim 1, further comprising: an insulating film formed on the active layer, the insulating film [[and]] having a th r ough hole; [[,]] and a pad electrode formed on a part of the insulating film, the pad electrode [[and]] extending 9 Serial No. 12/292,164 inside the through hole to be electrically connected to se-tha the second electrode, the pad electrode defining a bonding pad for the second electrode is electrically connected to the pad.
The GaN-based semiconductor device according to claim 1, wherein [[said]] the first electrode includes a titanium layer in direct ohmic contact with both the silicon substrate and the active layer.
The GaN-based semiconductor device according to claim 1, wherein [[said]] the silicon substrate has an impurity concentration of not less than 5x1019 cm⁻³ and not greater than 1x10 21 cm -3.
The GaN-based semiconductor device according to claim 1, being a field effect transistor futhe+ comprising: a gate electrode; [[,]] a source electrode defined by the [[said]] first electrode; and functioning-as-a-soure a drain electrode defined by the second electrode s o that the GaN based se mico nd uctor devie fun c t i ons as a field effect tranis tor.
The GaN-based semiconductor device according to claim 1, 10 Serial No. 12/292,164 wherein [[said]] the active layer includes a first GaN-based semiconductor layer and a second GaN-based semiconductor layer having a band-gap energy greater than that of the first GaN-based semiconductor layer.
The GaN-based semiconductor device according to claim 1, being a Schottky barrier diode, wherein [[said]] t he second electrode is formed of [[a]] material e apab le-ef- being in Schottky contact with the active layer so that the GaN base semicondutoi
The GaN-based semiconductor device according to claim 1, further comprising an insulating layer formed on the internal wall surface of the trench, wherein [[said]] t he first electrode [[being]] is formed on the insulating layer, and the insulating layer electrically insulates the first electrode from the active layer along the internal wall surface.
The GaN-based semiconductor device according to claim 1, wherein the trench is tapered toward the bottom surface of the substrate.
The GaN-based semiconductor device according to claim 1, wherein the first and second electrodes include interdigitating fingers.
-13.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor device with trench first electrode
GaN-based field effect transistor (HFET/HEMT)
Materials described outside the worked examples.
silicon substrate
Si
GaN-based semiconductor active layer
metal for first electrode (ohmic contact)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
two-dimensional electron gas carrier mechanism | — | GaNAlGaN |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,304,809Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based semiconductor device, comprising: a silicon substrate; an active layer of GaN-based semiconductor formed on the silicon substrate s a trench formed in the active layer, the trench [[and]] extending from a top surface of the active layer to a depth reaching the silicon substrate; a first electrode formed on an internal wall surface of the trench, the first electrode extending so that the first electrode etends from the top surface of the active layer to the silicon substrate, [[said]] t he first electrode being formed of [[a]] metal in direct eapableef-being-in ohmic contact with both the silicon substrate and the active layer; a second electrode formed on the active layer to define a current path sO that a cuFFent flows between the first electrode and the second electrode via the active layer in an on-state of the device; and a bottom electrode formed on a bottom surface of the silicon substrate, the bottom electrode defining a bonding pad for the first electrode.
The GaN-based semiconductor device according to claim 1, further comprising: an insulating film formed on the active layer, the insulating film [[and]] having a th r ough hole; [[,]] and a pad electrode formed on a part of the insulating film, the pad electrode [[and]] extending 9 Serial No. 12/292,164 inside the through hole to be electrically connected to se-tha the second electrode, the pad electrode defining a bonding pad for the second electrode is electrically connected to the pad.
The GaN-based semiconductor device according to claim 1, wherein [[said]] the first electrode includes a titanium layer in direct ohmic contact with both the silicon substrate and the active layer.
The GaN-based semiconductor device according to claim 1, wherein [[said]] the silicon substrate has an impurity concentration of not less than 5x1019 cm⁻³ and not greater than 1x10 21 cm -3.
The GaN-based semiconductor device according to claim 1, being a field effect transistor futhe+ comprising: a gate electrode; [[,]] a source electrode defined by the [[said]] first electrode; and functioning-as-a-soure a drain electrode defined by the second electrode s o that the GaN based se mico nd uctor devie fun c t i ons as a field effect tranis tor.
The GaN-based semiconductor device according to claim 1, 10 Serial No. 12/292,164 wherein [[said]] the active layer includes a first GaN-based semiconductor layer and a second GaN-based semiconductor layer having a band-gap energy greater than that of the first GaN-based semiconductor layer.
The GaN-based semiconductor device according to claim 1, being a Schottky barrier diode, wherein [[said]] t he second electrode is formed of [[a]] material e apab le-ef- being in Schottky contact with the active layer so that the GaN base semicondutoi
The GaN-based semiconductor device according to claim 1, further comprising an insulating layer formed on the internal wall surface of the trench, wherein [[said]] t he first electrode [[being]] is formed on the insulating layer, and the insulating layer electrically insulates the first electrode from the active layer along the internal wall surface.
The GaN-based semiconductor device according to claim 1, wherein the trench is tapered toward the bottom surface of the substrate.
The GaN-based semiconductor device according to claim 1, wherein the first and second electrodes include interdigitating fingers.
-13.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor device with trench first electrode
GaN-based field effect transistor (HFET/HEMT)
Materials described outside the worked examples.
silicon substrate
Si
GaN-based semiconductor active layer
metal for first electrode (ohmic contact)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
two-dimensional electron gas carrier mechanism | — | GaNAlGaN |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,304,809Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-based semiconductor device, comprising: a silicon substrate; an active layer of GaN-based semiconductor formed on the silicon substrate s a trench formed in the active layer, the trench [[and]] extending from a top surface of the active layer to a depth reaching the silicon substrate; a first electrode formed on an internal wall surface of the trench, the first electrode extending so that the first electrode etends from the top surface of the active layer to the silicon substrate, [[said]] t he first electrode being formed of [[a]] metal in direct eapableef-being-in ohmic contact with both the silicon substrate and the active layer; a second electrode formed on the active layer to define a current path sO that a cuFFent flows between the first electrode and the second electrode via the active layer in an on-state of the device; and a bottom electrode formed on a bottom surface of the silicon substrate, the bottom electrode defining a bonding pad for the first electrode.
The GaN-based semiconductor device according to claim 1, further comprising: an insulating film formed on the active layer, the insulating film [[and]] having a th r ough hole; [[,]] and a pad electrode formed on a part of the insulating film, the pad electrode [[and]] extending 9 Serial No. 12/292,164 inside the through hole to be electrically connected to se-tha the second electrode, the pad electrode defining a bonding pad for the second electrode is electrically connected to the pad.
The GaN-based semiconductor device according to claim 1, wherein [[said]] the first electrode includes a titanium layer in direct ohmic contact with both the silicon substrate and the active layer.
The GaN-based semiconductor device according to claim 1, wherein [[said]] the silicon substrate has an impurity concentration of not less than 5x1019 cm⁻³ and not greater than 1x10 21 cm -3.
The GaN-based semiconductor device according to claim 1, being a field effect transistor futhe+ comprising: a gate electrode; [[,]] a source electrode defined by the [[said]] first electrode; and functioning-as-a-soure a drain electrode defined by the second electrode s o that the GaN based se mico nd uctor devie fun c t i ons as a field effect tranis tor.
The GaN-based semiconductor device according to claim 1, 10 Serial No. 12/292,164 wherein [[said]] the active layer includes a first GaN-based semiconductor layer and a second GaN-based semiconductor layer having a band-gap energy greater than that of the first GaN-based semiconductor layer.
The GaN-based semiconductor device according to claim 1, being a Schottky barrier diode, wherein [[said]] t he second electrode is formed of [[a]] material e apab le-ef- being in Schottky contact with the active layer so that the GaN base semicondutoi
The GaN-based semiconductor device according to claim 1, further comprising an insulating layer formed on the internal wall surface of the trench, wherein [[said]] t he first electrode [[being]] is formed on the insulating layer, and the insulating layer electrically insulates the first electrode from the active layer along the internal wall surface.
The GaN-based semiconductor device according to claim 1, wherein the trench is tapered toward the bottom surface of the substrate.
The GaN-based semiconductor device according to claim 1, wherein the first and second electrodes include interdigitating fingers.
-13.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor device with trench first electrode
GaN-based field effect transistor (HFET/HEMT)
Materials described outside the worked examples.
silicon substrate
Si
GaN-based semiconductor active layer
metal for first electrode (ohmic contact)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
two-dimensional electron gas carrier mechanism | — | GaNAlGaN |
Thickness |
Related documents with shared materials, methods, properties, or citations.
GaN-based Schottky barrier diode
GaN-based HFET first embodiment
titanium
Ti
first GaN-based semiconductor layer (channel/carrier drift layer)
second GaN-based semiconductor layer (larger bandgap, carrier supplying layer)
p-type GaN layer
GaN
silicon dioxide insulating layer
SiO₂
undoped AlGaN carrier supplying layer
AlGaN
AlN/GaN buffer layer
| — |
Thickness | ≤ 15 nm | — |
Thickness | ≥ 40 nm | — |
GaN-based Schottky barrier diode
GaN-based HFET first embodiment
titanium
Ti
first GaN-based semiconductor layer (channel/carrier drift layer)
second GaN-based semiconductor layer (larger bandgap, carrier supplying layer)
p-type GaN layer
GaN
silicon dioxide insulating layer
SiO₂
undoped AlGaN carrier supplying layer
AlGaN
AlN/GaN buffer layer
| — |
Thickness | ≤ 15 nm | — |
Thickness | ≥ 40 nm | — |
GaN-based Schottky barrier diode
GaN-based HFET first embodiment
titanium
Ti
first GaN-based semiconductor layer (channel/carrier drift layer)
second GaN-based semiconductor layer (larger bandgap, carrier supplying layer)
p-type GaN layer
GaN
silicon dioxide insulating layer
SiO₂
undoped AlGaN carrier supplying layer
AlGaN
AlN/GaN buffer layer
| — |
Thickness | ≤ 15 nm | — |
Thickness | ≥ 40 nm | — |
GaN-based Schottky barrier diode
GaN-based HFET first embodiment
titanium
Ti
first GaN-based semiconductor layer (channel/carrier drift layer)
second GaN-based semiconductor layer (larger bandgap, carrier supplying layer)
p-type GaN layer
GaN
silicon dioxide insulating layer
SiO₂
undoped AlGaN carrier supplying layer
AlGaN
AlN/GaN buffer layer
| — |
Thickness | ≤ 15 nm | — |
Thickness | ≥ 40 nm | — |