Patent
US 11,581,448PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH LATERALLY FABRICATED ALONGSIDE GaN ON Si FIELD-EFFECT TRANSISTORS
Matthew DeJarld
US
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Patent
Atlas literature
Patent
US 11,581,448Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An integrated circuit structure comprising: a substrate having an upper surface; a gallium nitride layer disposed on said upper surface of the substrate, wherein said substrate and said gallium nitride layer comprise a wafer; and a photoconductive semiconductor switch laterally disposed alongside a transistor on said gallium nitride layer integrated into the integrated circuit structure; wherein a regrown gallium nitride material is disposed on said photoconductive semiconductor switch and operatively coupled with said wafer. Original
The integrated circuit structure according to claim 1, wherein said substrate comprises at least one of a silicon material and a silicon carbide material. Original
The integrated circuit structure according to claim 1, wherein said transistor comprises a field-effect transistor. Original
The integrated circuit structure according to claim 1, wherein said photoconductive semiconductor switch comprises a first electrical contact and a second electrical contact disposed on the GaN layer. Original
The integrated circuit structure according to claim 1 further comprising: a transparent silicon dioxide dielectric insulation layer configured to insulate each of the first electrical contact and the second electrical contact of the photoconductive semiconductor switch and the transistor. Original
The integrated circuit structure according to claim 1 further comprising: a light source optically coupled to said photoconductive semiconductor switch. Original
The integrated circuit structure according to claim 1, wherein said photoconductive semiconductor switch and said transistor are each configured to be utilized separately or interdependently. Original
The integrated circuit structure according to claim 1, wherein said photoconductive semiconductor switch is homogeneously integrated with said transistor on a gallium nitride on silicon wafer and configured to control said transistor.
The integrated circuit structure according to are transparent to a light source utilized to trigger Original Original claim 1, wherein said photoconductive with said transistor in a gallium nitride on said transistor. Original claim 1, wherein a dielectric and an interlayer the photoconductive semiconductor switch.
The integrated circuit structure according to semiconductor switch is homogeneously integrated silicon wafer and configured to be controlled by
Layer stacks claimed or described, ordered top of device to substrate.
integrated circuit structure with PCSS and transistor on GaN-on-Si wafer
field-effect transistor on GaN layer
Materials described outside the worked examples.
gallium nitride
GaN
substrate
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,581,448Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An integrated circuit structure comprising: a substrate having an upper surface; a gallium nitride layer disposed on said upper surface of the substrate, wherein said substrate and said gallium nitride layer comprise a wafer; and a photoconductive semiconductor switch laterally disposed alongside a transistor on said gallium nitride layer integrated into the integrated circuit structure; wherein a regrown gallium nitride material is disposed on said photoconductive semiconductor switch and operatively coupled with said wafer. Original
The integrated circuit structure according to claim 1, wherein said substrate comprises at least one of a silicon material and a silicon carbide material. Original
The integrated circuit structure according to claim 1, wherein said transistor comprises a field-effect transistor. Original
The integrated circuit structure according to claim 1, wherein said photoconductive semiconductor switch comprises a first electrical contact and a second electrical contact disposed on the GaN layer. Original
The integrated circuit structure according to claim 1 further comprising: a transparent silicon dioxide dielectric insulation layer configured to insulate each of the first electrical contact and the second electrical contact of the photoconductive semiconductor switch and the transistor. Original
The integrated circuit structure according to claim 1 further comprising: a light source optically coupled to said photoconductive semiconductor switch. Original
The integrated circuit structure according to claim 1, wherein said photoconductive semiconductor switch and said transistor are each configured to be utilized separately or interdependently. Original
The integrated circuit structure according to claim 1, wherein said photoconductive semiconductor switch is homogeneously integrated with said transistor on a gallium nitride on silicon wafer and configured to control said transistor.
The integrated circuit structure according to are transparent to a light source utilized to trigger Original Original claim 1, wherein said photoconductive with said transistor in a gallium nitride on said transistor. Original claim 1, wherein a dielectric and an interlayer the photoconductive semiconductor switch.
The integrated circuit structure according to semiconductor switch is homogeneously integrated silicon wafer and configured to be controlled by
Layer stacks claimed or described, ordered top of device to substrate.
integrated circuit structure with PCSS and transistor on GaN-on-Si wafer
field-effect transistor on GaN layer
Materials described outside the worked examples.
gallium nitride
GaN
substrate
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,581,448Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An integrated circuit structure comprising: a substrate having an upper surface; a gallium nitride layer disposed on said upper surface of the substrate, wherein said substrate and said gallium nitride layer comprise a wafer; and a photoconductive semiconductor switch laterally disposed alongside a transistor on said gallium nitride layer integrated into the integrated circuit structure; wherein a regrown gallium nitride material is disposed on said photoconductive semiconductor switch and operatively coupled with said wafer. Original
The integrated circuit structure according to claim 1, wherein said substrate comprises at least one of a silicon material and a silicon carbide material. Original
The integrated circuit structure according to claim 1, wherein said transistor comprises a field-effect transistor. Original
The integrated circuit structure according to claim 1, wherein said photoconductive semiconductor switch comprises a first electrical contact and a second electrical contact disposed on the GaN layer. Original
The integrated circuit structure according to claim 1 further comprising: a transparent silicon dioxide dielectric insulation layer configured to insulate each of the first electrical contact and the second electrical contact of the photoconductive semiconductor switch and the transistor. Original
The integrated circuit structure according to claim 1 further comprising: a light source optically coupled to said photoconductive semiconductor switch. Original
The integrated circuit structure according to claim 1, wherein said photoconductive semiconductor switch and said transistor are each configured to be utilized separately or interdependently. Original
The integrated circuit structure according to claim 1, wherein said photoconductive semiconductor switch is homogeneously integrated with said transistor on a gallium nitride on silicon wafer and configured to control said transistor.
The integrated circuit structure according to are transparent to a light source utilized to trigger Original Original claim 1, wherein said photoconductive with said transistor in a gallium nitride on said transistor. Original claim 1, wherein a dielectric and an interlayer the photoconductive semiconductor switch.
The integrated circuit structure according to semiconductor switch is homogeneously integrated silicon wafer and configured to be controlled by
Layer stacks claimed or described, ordered top of device to substrate.
integrated circuit structure with PCSS and transistor on GaN-on-Si wafer
field-effect transistor on GaN layer
Materials described outside the worked examples.
gallium nitride
GaN
substrate
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,581,448Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An integrated circuit structure comprising: a substrate having an upper surface; a gallium nitride layer disposed on said upper surface of the substrate, wherein said substrate and said gallium nitride layer comprise a wafer; and a photoconductive semiconductor switch laterally disposed alongside a transistor on said gallium nitride layer integrated into the integrated circuit structure; wherein a regrown gallium nitride material is disposed on said photoconductive semiconductor switch and operatively coupled with said wafer. Original
The integrated circuit structure according to claim 1, wherein said substrate comprises at least one of a silicon material and a silicon carbide material. Original
The integrated circuit structure according to claim 1, wherein said transistor comprises a field-effect transistor. Original
The integrated circuit structure according to claim 1, wherein said photoconductive semiconductor switch comprises a first electrical contact and a second electrical contact disposed on the GaN layer. Original
The integrated circuit structure according to claim 1 further comprising: a transparent silicon dioxide dielectric insulation layer configured to insulate each of the first electrical contact and the second electrical contact of the photoconductive semiconductor switch and the transistor. Original
The integrated circuit structure according to claim 1 further comprising: a light source optically coupled to said photoconductive semiconductor switch. Original
The integrated circuit structure according to claim 1, wherein said photoconductive semiconductor switch and said transistor are each configured to be utilized separately or interdependently. Original
The integrated circuit structure according to claim 1, wherein said photoconductive semiconductor switch is homogeneously integrated with said transistor on a gallium nitride on silicon wafer and configured to control said transistor.
The integrated circuit structure according to are transparent to a light source utilized to trigger Original Original claim 1, wherein said photoconductive with said transistor in a gallium nitride on said transistor. Original claim 1, wherein a dielectric and an interlayer the photoconductive semiconductor switch.
The integrated circuit structure according to semiconductor switch is homogeneously integrated silicon wafer and configured to be controlled by
Layer stacks claimed or described, ordered top of device to substrate.
integrated circuit structure with PCSS and transistor on GaN-on-Si wafer
field-effect transistor on GaN layer
Materials described outside the worked examples.
gallium nitride
GaN
substrate
Related documents with shared materials, methods, properties, or citations.
off-mesa PCSS on GaN-on-Si wafer with regrown GaN
on-mesa PCSS on GaN-on-Si wafer with AlGaN window and regrown GaN
laterally integrated circuit structure with GaN HEMT and PCSS
silicon
Si
silicon carbide
SiC
aluminum gallium nitride
AlGaN
silicon dioxide
SiO₂
silicon nitride
SiNx
off-mesa PCSS on GaN-on-Si wafer with regrown GaN
on-mesa PCSS on GaN-on-Si wafer with AlGaN window and regrown GaN
laterally integrated circuit structure with GaN HEMT and PCSS
silicon
Si
silicon carbide
SiC
aluminum gallium nitride
AlGaN
silicon dioxide
SiO₂
silicon nitride
SiNx
off-mesa PCSS on GaN-on-Si wafer with regrown GaN
on-mesa PCSS on GaN-on-Si wafer with AlGaN window and regrown GaN
laterally integrated circuit structure with GaN HEMT and PCSS
silicon
Si
silicon carbide
SiC
aluminum gallium nitride
AlGaN
silicon dioxide
SiO₂
silicon nitride
SiNx
off-mesa PCSS on GaN-on-Si wafer with regrown GaN
on-mesa PCSS on GaN-on-Si wafer with AlGaN window and regrown GaN
laterally integrated circuit structure with GaN HEMT and PCSS
silicon
Si
silicon carbide
SiC
aluminum gallium nitride
AlGaN
silicon dioxide
SiO₂
silicon nitride
SiNx