Patent
US 9,484,284MICROFLUIDIC IMPINGEMENT JET COOLED EMBEDDED DIAMOND GaN HEMT
Vincent Gambin
US
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Patent
Atlas literature
Patent
US 9,484,284Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a profile view of a circuit assembly showing a microfluidic impingement jet being directed onto a diamond layer provided in a Si C substrate of a GaN HEMT device, 5 Docket No. NGC-00198 (007866-0030)
Figure 2 is an isometric line drawing of the circuit assembly shown in figure 1; and
Figure 3 is a cut-away isometric view of a circuit assembly similar to the circuit assembly shown in figure 1
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Docket No. NGC-00198 (007866-0030) CLAIMS What is Claimed is:
Docket No. NG C -00198 (007866-0030)
A monolithic microwave integrated circuit (MMIC) power amplifier comprising: a S i C substrate including a top surface and a bottom surface, said substrate further including a plurality of microchannels formed through the bottom surface and into the substrate; a diamond layer provided within each of the microchannels in the substrate; a plurality of GaN high electron mobility transistor (HEMT) devices provided on the top surface of the substrate where each HEMT device is p ositioned direct ly opp osite to a microchannel; and 11 Docket No. NG C -00198 (007866-0030) a silicon manifold coupled to the bottom surface of the substrate and including a plurality of micro-machined channels formed therein that include an impingement jet channel positioned adjacent each microchannel, a return channel positioned adjacent to each microchannel, a supply channel supplying a cooling fluid to the impingement channels and a return channel collecting heated cooling fluid from the supply channels so that an impingement jet is directed on to the diamond layer for removing heat generated by the HEMT devices.
The power amplifier according to claim 11 further comprising a thermally conductive ground plane positioned between the bottom surface of the substrate and the manifold.
The power amplifier according to claim 11 further comprising a ground plane bonded to a surface of the manifold opposite to the substrate.
The power amplifier according to claim 11 wherein the diamond layers are chemical vapor deposition polycrystalline diamond layers.
The power amplifier according to claim 11 wherein the manifold includes a series of pins or fins positioned within the return channel.
A circuit assembly comprising: a substrate including a top surface and a bottom surface, said substrate further including a microchannel formed through the bottom surface and into the substrate; a diamond layer provided within the microchannel in the substrate; a semiconductor device provided on the top surface of the substrate and bein g p ositioned direct ly opp osite to the microchannel; and 12 Docket No. NG C -00198 (007866-0030) an impingement jet channel positioned adjacent the microchannel and directing an impingement jet of cooling fluid on to the diamond layer for removing heat generated by the semiconductor device.
The circuit assembly according to claim 16 wherein the impingement jet channel is provided in a micro-machined silicon manifold.
The circuit assembly according to claim 16 electron mobility transistor (HEMT) device and
The circuit assembly according to claim 16 de p osition polycry stalline diamond la y ers. wherein the manifold includes a series of pins or wherein the semiconductor device is GaN high the substrate is silicon carbide (SiC) substrate. wherein the diamond lay ers are chemical va p or
Layer stacks claimed or described, ordered top of device to substrate.
MMIC power amplifier with microfluidic impingement jet cooling
circuit assembly with diamond-filled microchannel and impingement jet cooling
Materials described outside the worked examples.
silicon carbide
SiC
diamond
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,484,284Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a profile view of a circuit assembly showing a microfluidic impingement jet being directed onto a diamond layer provided in a Si C substrate of a GaN HEMT device, 5 Docket No. NGC-00198 (007866-0030)
Figure 2 is an isometric line drawing of the circuit assembly shown in figure 1; and
Figure 3 is a cut-away isometric view of a circuit assembly similar to the circuit assembly shown in figure 1
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Docket No. NGC-00198 (007866-0030) CLAIMS What is Claimed is:
Docket No. NG C -00198 (007866-0030)
A monolithic microwave integrated circuit (MMIC) power amplifier comprising: a S i C substrate including a top surface and a bottom surface, said substrate further including a plurality of microchannels formed through the bottom surface and into the substrate; a diamond layer provided within each of the microchannels in the substrate; a plurality of GaN high electron mobility transistor (HEMT) devices provided on the top surface of the substrate where each HEMT device is p ositioned direct ly opp osite to a microchannel; and 11 Docket No. NG C -00198 (007866-0030) a silicon manifold coupled to the bottom surface of the substrate and including a plurality of micro-machined channels formed therein that include an impingement jet channel positioned adjacent each microchannel, a return channel positioned adjacent to each microchannel, a supply channel supplying a cooling fluid to the impingement channels and a return channel collecting heated cooling fluid from the supply channels so that an impingement jet is directed on to the diamond layer for removing heat generated by the HEMT devices.
The power amplifier according to claim 11 further comprising a thermally conductive ground plane positioned between the bottom surface of the substrate and the manifold.
The power amplifier according to claim 11 further comprising a ground plane bonded to a surface of the manifold opposite to the substrate.
The power amplifier according to claim 11 wherein the diamond layers are chemical vapor deposition polycrystalline diamond layers.
The power amplifier according to claim 11 wherein the manifold includes a series of pins or fins positioned within the return channel.
A circuit assembly comprising: a substrate including a top surface and a bottom surface, said substrate further including a microchannel formed through the bottom surface and into the substrate; a diamond layer provided within the microchannel in the substrate; a semiconductor device provided on the top surface of the substrate and bein g p ositioned direct ly opp osite to the microchannel; and 12 Docket No. NG C -00198 (007866-0030) an impingement jet channel positioned adjacent the microchannel and directing an impingement jet of cooling fluid on to the diamond layer for removing heat generated by the semiconductor device.
The circuit assembly according to claim 16 wherein the impingement jet channel is provided in a micro-machined silicon manifold.
The circuit assembly according to claim 16 electron mobility transistor (HEMT) device and
The circuit assembly according to claim 16 de p osition polycry stalline diamond la y ers. wherein the manifold includes a series of pins or wherein the semiconductor device is GaN high the substrate is silicon carbide (SiC) substrate. wherein the diamond lay ers are chemical va p or
Layer stacks claimed or described, ordered top of device to substrate.
MMIC power amplifier with microfluidic impingement jet cooling
circuit assembly with diamond-filled microchannel and impingement jet cooling
Materials described outside the worked examples.
silicon carbide
SiC
diamond
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,484,284Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a profile view of a circuit assembly showing a microfluidic impingement jet being directed onto a diamond layer provided in a Si C substrate of a GaN HEMT device, 5 Docket No. NGC-00198 (007866-0030)
Figure 2 is an isometric line drawing of the circuit assembly shown in figure 1; and
Figure 3 is a cut-away isometric view of a circuit assembly similar to the circuit assembly shown in figure 1
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Docket No. NGC-00198 (007866-0030) CLAIMS What is Claimed is:
Docket No. NG C -00198 (007866-0030)
A monolithic microwave integrated circuit (MMIC) power amplifier comprising: a S i C substrate including a top surface and a bottom surface, said substrate further including a plurality of microchannels formed through the bottom surface and into the substrate; a diamond layer provided within each of the microchannels in the substrate; a plurality of GaN high electron mobility transistor (HEMT) devices provided on the top surface of the substrate where each HEMT device is p ositioned direct ly opp osite to a microchannel; and 11 Docket No. NG C -00198 (007866-0030) a silicon manifold coupled to the bottom surface of the substrate and including a plurality of micro-machined channels formed therein that include an impingement jet channel positioned adjacent each microchannel, a return channel positioned adjacent to each microchannel, a supply channel supplying a cooling fluid to the impingement channels and a return channel collecting heated cooling fluid from the supply channels so that an impingement jet is directed on to the diamond layer for removing heat generated by the HEMT devices.
The power amplifier according to claim 11 further comprising a thermally conductive ground plane positioned between the bottom surface of the substrate and the manifold.
The power amplifier according to claim 11 further comprising a ground plane bonded to a surface of the manifold opposite to the substrate.
The power amplifier according to claim 11 wherein the diamond layers are chemical vapor deposition polycrystalline diamond layers.
The power amplifier according to claim 11 wherein the manifold includes a series of pins or fins positioned within the return channel.
A circuit assembly comprising: a substrate including a top surface and a bottom surface, said substrate further including a microchannel formed through the bottom surface and into the substrate; a diamond layer provided within the microchannel in the substrate; a semiconductor device provided on the top surface of the substrate and bein g p ositioned direct ly opp osite to the microchannel; and 12 Docket No. NG C -00198 (007866-0030) an impingement jet channel positioned adjacent the microchannel and directing an impingement jet of cooling fluid on to the diamond layer for removing heat generated by the semiconductor device.
The circuit assembly according to claim 16 wherein the impingement jet channel is provided in a micro-machined silicon manifold.
The circuit assembly according to claim 16 electron mobility transistor (HEMT) device and
The circuit assembly according to claim 16 de p osition polycry stalline diamond la y ers. wherein the manifold includes a series of pins or wherein the semiconductor device is GaN high the substrate is silicon carbide (SiC) substrate. wherein the diamond lay ers are chemical va p or
Layer stacks claimed or described, ordered top of device to substrate.
MMIC power amplifier with microfluidic impingement jet cooling
circuit assembly with diamond-filled microchannel and impingement jet cooling
Materials described outside the worked examples.
silicon carbide
SiC
diamond
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,484,284Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a profile view of a circuit assembly showing a microfluidic impingement jet being directed onto a diamond layer provided in a Si C substrate of a GaN HEMT device, 5 Docket No. NGC-00198 (007866-0030)
Figure 2 is an isometric line drawing of the circuit assembly shown in figure 1; and
Figure 3 is a cut-away isometric view of a circuit assembly similar to the circuit assembly shown in figure 1
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Docket No. NGC-00198 (007866-0030) CLAIMS What is Claimed is:
Docket No. NG C -00198 (007866-0030)
A monolithic microwave integrated circuit (MMIC) power amplifier comprising: a S i C substrate including a top surface and a bottom surface, said substrate further including a plurality of microchannels formed through the bottom surface and into the substrate; a diamond layer provided within each of the microchannels in the substrate; a plurality of GaN high electron mobility transistor (HEMT) devices provided on the top surface of the substrate where each HEMT device is p ositioned direct ly opp osite to a microchannel; and 11 Docket No. NG C -00198 (007866-0030) a silicon manifold coupled to the bottom surface of the substrate and including a plurality of micro-machined channels formed therein that include an impingement jet channel positioned adjacent each microchannel, a return channel positioned adjacent to each microchannel, a supply channel supplying a cooling fluid to the impingement channels and a return channel collecting heated cooling fluid from the supply channels so that an impingement jet is directed on to the diamond layer for removing heat generated by the HEMT devices.
The power amplifier according to claim 11 further comprising a thermally conductive ground plane positioned between the bottom surface of the substrate and the manifold.
The power amplifier according to claim 11 further comprising a ground plane bonded to a surface of the manifold opposite to the substrate.
The power amplifier according to claim 11 wherein the diamond layers are chemical vapor deposition polycrystalline diamond layers.
The power amplifier according to claim 11 wherein the manifold includes a series of pins or fins positioned within the return channel.
A circuit assembly comprising: a substrate including a top surface and a bottom surface, said substrate further including a microchannel formed through the bottom surface and into the substrate; a diamond layer provided within the microchannel in the substrate; a semiconductor device provided on the top surface of the substrate and bein g p ositioned direct ly opp osite to the microchannel; and 12 Docket No. NG C -00198 (007866-0030) an impingement jet channel positioned adjacent the microchannel and directing an impingement jet of cooling fluid on to the diamond layer for removing heat generated by the semiconductor device.
The circuit assembly according to claim 16 wherein the impingement jet channel is provided in a micro-machined silicon manifold.
The circuit assembly according to claim 16 electron mobility transistor (HEMT) device and
The circuit assembly according to claim 16 de p osition polycry stalline diamond la y ers. wherein the manifold includes a series of pins or wherein the semiconductor device is GaN high the substrate is silicon carbide (SiC) substrate. wherein the diamond lay ers are chemical va p or
Layer stacks claimed or described, ordered top of device to substrate.
MMIC power amplifier with microfluidic impingement jet cooling
circuit assembly with diamond-filled microchannel and impingement jet cooling
Materials described outside the worked examples.
silicon carbide
SiC
diamond
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
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