Patent
US 8,421,122HIGH POWER GALLIUM NITRIDE FIELD EFFECT TRANSISTOR SWITCHES
Thomas J. Smith JR.
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,421,122Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows the circuit topology of a device according to some embodiments.
Figure 2 shows a layout drawing of a monolithic die according to some embodiments.
Figure 3 shows the measured power handing of the SPDT switch circuit of
Figures 4 and 5 show wafer averaged small signal s-parameter measurements of transmission and mismatch on the input and the output of the selected path of the SPDT switch circuit of
Figure 6 shows a layout drawing of the details of the gate location in the channel of a FET according to some embodiments showing its location at the midpoint between the source and drain terminals of the transistor (i.e. LG s = LGD).
Figure 7 illustrates a serpentine gate layout in accordance with some embodiments.
Figure 8 shows a layout drawing of a monolithic die having a serpentine gate layout according to some embodiments.
Figures 9A and 9B are graphs that illustrate transmission versus input drive power for a switch having a layout as shown in
Figure 10 A is a graph that illustrates wafer average of measured SPDT switch transmission verses input signal frequency for a switch having a layout as shown in
Figures 10 B and 1 O C are graphs that illustrate wafer average of measured SPDT switch input and output mismatch for a switch having a layout as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A monolithic high power radio frequency switch, comprising: a substrate; first and second gallium nitride high electron mobility transistors on the substrate, each of the first and second gallium nitride high electron mobility transistors including a respective source, drain and gate te rm inal, wherein the source terminal of the first gallium nitride high electron mobility transistor is coupled to the drain terminal of the second gallium nitride high electron mobility transistor, and the source terminal of the second gallium nitride high electron mobility transistor is coupled to ground; an RF input pad coupled to the drain terminal of the first gallium nitride high electron mobility transistor; an RF output pad coupled to the source terminal of the first gallium nitride high electron mobility transistor and the drain terminal of the second gallium nitride high electron mobility transistor; and a control pad coupled to the gate of the first gallium nitride high electron mobility transistor.
The monolithic high power radio frequency switch of Claim 1, wherein the RF input pad is coupled to the drain terminal of the first gallium nitride high electron mobility transistor through a first spiral inductor loop, and wherein the RF output pad is coupled to the source terminal of the first gallium nitride high electron mobility transistor and the drain terminal of the second gallium nitride high electron mobility transistor through a second spiral inductor l oop.
The monolithic high power radio frequency switch of Claim 1, wherein the control pad is coupled to the gate of the first gallium nitride high electron mobility transistor through a first resistor, and wherein a complementary control pad is coupled to the gate of the second gallium nitride high electron mobility transistor through a second resistor.
The monolithic high power radio frequency switch of Claim 1, wherein each of the first and second gallium nitride high electron mobility transistors has a gate to drain spacing LGD that is equal to a gate to source spacing L G s of the respective first and second gallium nitride high electron mobility transister transistors.
The monolithic high power radio frequency switch of Claim 1, wherein each of the first and second gallium nitride high electron mobility transistors has a serpentine gate pattern.
The monolithic high power radio frequency switch of Claim 1, wherein the monolithic high power radio frequency switch demonstrates substantially linear transmission of over 20 watts of RF signal input power over a frequency range from 2.5GHz to 4.0 GHz.
The monolithic high power radio frequency switch of Claim 1, wherein the monolithic high power radio frequency switch demonstrates transmission loss of less than -0.4 dB for RF signals up to 4 GHz.
The monolithic high power radio frequency switch of Claim 1, wherein the monolithic high power radio frequency switch demonstrates better than -8 dB input and output mismatch error at a frequency between 2.0 GHz and 4.0 GHz.
In re: Thomas Smith et al. Application No.: 13/110,573 Filing Date: Page 4 11. The high power radio frequency switch of Claim 1, wherein the R F output pad comprises a first R F output pad, the switch further comprising: a second R F output pad and a complementary control pad on the substrate; and third and fourth gallium nitride high electron mobility transistors on the substrate, each of the third and fourth gallium nitride high electron mobility transistors including a respective source, drain and gate terminal; wherein: the drai ' n terminal of the third gallium nitride high electron mobility transistor is coupled to the drain terminal of the first gallium nitride high electron mobility transistor; the source terminal of the third gallium nitride high electron mobility transistor is coupled to the drain terminal of the fourth gallium nitride high electron mobility transistor; the source terminal of the fourth gallium nitride high electron mobility transistor is coupled to ground; the second R F output pad is coupled to the source terminal of the third gallium nitride high electron mobility transistor and to the drain terminal of the fourth gallium nitride high electron mobility transistor; the control pad is coupled to the gate of the fourth gallium nitride high electron mobility transistor; and the complementary control pad is coupled to the gate of the third gallium nitride high electron mobility transistor.
A high power radio frequency switch, comprising: first and second gallium nitride high electron mobility transistors, each of the first and second gallium nitride high electron mobility transistors including a respective source, drain and gate terminal, wherein the source terminal of the first gallium nitride high electron mobility transistor is coupled to the drain terminal of the second gallium nitride high electron mobility transistor, and the source terminal of the second gallium nitride high electron mobility transistor is coupled to ground; In re: Thomas Smith et al. Application No.: 13/110,573 Filing Date: Pag e 6 an R F input pad coupled to the drain terminal of the first second gallium nitride high electron mobility transistor; an R F output pad coupled to the source terminal of the first gallium nitride high electron mobility transistor and the drain terminal of the second gallium nitride high electron mobility transistor; a control pad coupled to the gate of the first gallium nitride high electron mobility transistor; and a complementary control pad coupled to the gate of the second gallium nitride high electron mobility transistor.
Layer stacks claimed or described, ordered top of device to substrate.
monolithic high power RF switch (SPST/single-arm, two GaN HEMT series-shunt)
monolithic high power RF SPDT switch (four GaN HEMT)
Materials described outside the worked examples.
gallium nitride
GaN
silicon carbide
SiC
Measurements and analyses referenced in the patent, with their drawing references.
Figure 6 shows a layout drawing of the details of the gate location in the channel of a FET according to some embodiments showing its location at the midpoint between the source and drain terminals of the transistor (i.e. LG s = LGD).
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
substantially linear RF transmission power | ≥ 20 W | — |
transmission loss | <-0.4 dB | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,421,122Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows the circuit topology of a device according to some embodiments.
Figure 2 shows a layout drawing of a monolithic die according to some embodiments.
Figure 3 shows the measured power handing of the SPDT switch circuit of
Figures 4 and 5 show wafer averaged small signal s-parameter measurements of transmission and mismatch on the input and the output of the selected path of the SPDT switch circuit of
Figure 6 shows a layout drawing of the details of the gate location in the channel of a FET according to some embodiments showing its location at the midpoint between the source and drain terminals of the transistor (i.e. LG s = LGD).
Figure 7 illustrates a serpentine gate layout in accordance with some embodiments.
Figure 8 shows a layout drawing of a monolithic die having a serpentine gate layout according to some embodiments.
Figures 9A and 9B are graphs that illustrate transmission versus input drive power for a switch having a layout as shown in
Figure 10 A is a graph that illustrates wafer average of measured SPDT switch transmission verses input signal frequency for a switch having a layout as shown in
Figures 10 B and 1 O C are graphs that illustrate wafer average of measured SPDT switch input and output mismatch for a switch having a layout as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A monolithic high power radio frequency switch, comprising: a substrate; first and second gallium nitride high electron mobility transistors on the substrate, each of the first and second gallium nitride high electron mobility transistors including a respective source, drain and gate te rm inal, wherein the source terminal of the first gallium nitride high electron mobility transistor is coupled to the drain terminal of the second gallium nitride high electron mobility transistor, and the source terminal of the second gallium nitride high electron mobility transistor is coupled to ground; an RF input pad coupled to the drain terminal of the first gallium nitride high electron mobility transistor; an RF output pad coupled to the source terminal of the first gallium nitride high electron mobility transistor and the drain terminal of the second gallium nitride high electron mobility transistor; and a control pad coupled to the gate of the first gallium nitride high electron mobility transistor.
The monolithic high power radio frequency switch of Claim 1, wherein the RF input pad is coupled to the drain terminal of the first gallium nitride high electron mobility transistor through a first spiral inductor loop, and wherein the RF output pad is coupled to the source terminal of the first gallium nitride high electron mobility transistor and the drain terminal of the second gallium nitride high electron mobility transistor through a second spiral inductor l oop.
The monolithic high power radio frequency switch of Claim 1, wherein the control pad is coupled to the gate of the first gallium nitride high electron mobility transistor through a first resistor, and wherein a complementary control pad is coupled to the gate of the second gallium nitride high electron mobility transistor through a second resistor.
The monolithic high power radio frequency switch of Claim 1, wherein each of the first and second gallium nitride high electron mobility transistors has a gate to drain spacing LGD that is equal to a gate to source spacing L G s of the respective first and second gallium nitride high electron mobility transister transistors.
The monolithic high power radio frequency switch of Claim 1, wherein each of the first and second gallium nitride high electron mobility transistors has a serpentine gate pattern.
The monolithic high power radio frequency switch of Claim 1, wherein the monolithic high power radio frequency switch demonstrates substantially linear transmission of over 20 watts of RF signal input power over a frequency range from 2.5GHz to 4.0 GHz.
The monolithic high power radio frequency switch of Claim 1, wherein the monolithic high power radio frequency switch demonstrates transmission loss of less than -0.4 dB for RF signals up to 4 GHz.
The monolithic high power radio frequency switch of Claim 1, wherein the monolithic high power radio frequency switch demonstrates better than -8 dB input and output mismatch error at a frequency between 2.0 GHz and 4.0 GHz.
In re: Thomas Smith et al. Application No.: 13/110,573 Filing Date: Page 4 11. The high power radio frequency switch of Claim 1, wherein the R F output pad comprises a first R F output pad, the switch further comprising: a second R F output pad and a complementary control pad on the substrate; and third and fourth gallium nitride high electron mobility transistors on the substrate, each of the third and fourth gallium nitride high electron mobility transistors including a respective source, drain and gate terminal; wherein: the drai ' n terminal of the third gallium nitride high electron mobility transistor is coupled to the drain terminal of the first gallium nitride high electron mobility transistor; the source terminal of the third gallium nitride high electron mobility transistor is coupled to the drain terminal of the fourth gallium nitride high electron mobility transistor; the source terminal of the fourth gallium nitride high electron mobility transistor is coupled to ground; the second R F output pad is coupled to the source terminal of the third gallium nitride high electron mobility transistor and to the drain terminal of the fourth gallium nitride high electron mobility transistor; the control pad is coupled to the gate of the fourth gallium nitride high electron mobility transistor; and the complementary control pad is coupled to the gate of the third gallium nitride high electron mobility transistor.
A high power radio frequency switch, comprising: first and second gallium nitride high electron mobility transistors, each of the first and second gallium nitride high electron mobility transistors including a respective source, drain and gate terminal, wherein the source terminal of the first gallium nitride high electron mobility transistor is coupled to the drain terminal of the second gallium nitride high electron mobility transistor, and the source terminal of the second gallium nitride high electron mobility transistor is coupled to ground; In re: Thomas Smith et al. Application No.: 13/110,573 Filing Date: Pag e 6 an R F input pad coupled to the drain terminal of the first second gallium nitride high electron mobility transistor; an R F output pad coupled to the source terminal of the first gallium nitride high electron mobility transistor and the drain terminal of the second gallium nitride high electron mobility transistor; a control pad coupled to the gate of the first gallium nitride high electron mobility transistor; and a complementary control pad coupled to the gate of the second gallium nitride high electron mobility transistor.
Layer stacks claimed or described, ordered top of device to substrate.
monolithic high power RF switch (SPST/single-arm, two GaN HEMT series-shunt)
monolithic high power RF SPDT switch (four GaN HEMT)
Materials described outside the worked examples.
gallium nitride
GaN
silicon carbide
SiC
Measurements and analyses referenced in the patent, with their drawing references.
Figure 6 shows a layout drawing of the details of the gate location in the channel of a FET according to some embodiments showing its location at the midpoint between the source and drain terminals of the transistor (i.e. LG s = LGD).
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
substantially linear RF transmission power | ≥ 20 W | — |
transmission loss | <-0.4 dB | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,421,122Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows the circuit topology of a device according to some embodiments.
Figure 2 shows a layout drawing of a monolithic die according to some embodiments.
Figure 3 shows the measured power handing of the SPDT switch circuit of
Figures 4 and 5 show wafer averaged small signal s-parameter measurements of transmission and mismatch on the input and the output of the selected path of the SPDT switch circuit of
Figure 6 shows a layout drawing of the details of the gate location in the channel of a FET according to some embodiments showing its location at the midpoint between the source and drain terminals of the transistor (i.e. LG s = LGD).
Figure 7 illustrates a serpentine gate layout in accordance with some embodiments.
Figure 8 shows a layout drawing of a monolithic die having a serpentine gate layout according to some embodiments.
Figures 9A and 9B are graphs that illustrate transmission versus input drive power for a switch having a layout as shown in
Figure 10 A is a graph that illustrates wafer average of measured SPDT switch transmission verses input signal frequency for a switch having a layout as shown in
Figures 10 B and 1 O C are graphs that illustrate wafer average of measured SPDT switch input and output mismatch for a switch having a layout as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A monolithic high power radio frequency switch, comprising: a substrate; first and second gallium nitride high electron mobility transistors on the substrate, each of the first and second gallium nitride high electron mobility transistors including a respective source, drain and gate te rm inal, wherein the source terminal of the first gallium nitride high electron mobility transistor is coupled to the drain terminal of the second gallium nitride high electron mobility transistor, and the source terminal of the second gallium nitride high electron mobility transistor is coupled to ground; an RF input pad coupled to the drain terminal of the first gallium nitride high electron mobility transistor; an RF output pad coupled to the source terminal of the first gallium nitride high electron mobility transistor and the drain terminal of the second gallium nitride high electron mobility transistor; and a control pad coupled to the gate of the first gallium nitride high electron mobility transistor.
The monolithic high power radio frequency switch of Claim 1, wherein the RF input pad is coupled to the drain terminal of the first gallium nitride high electron mobility transistor through a first spiral inductor loop, and wherein the RF output pad is coupled to the source terminal of the first gallium nitride high electron mobility transistor and the drain terminal of the second gallium nitride high electron mobility transistor through a second spiral inductor l oop.
The monolithic high power radio frequency switch of Claim 1, wherein the control pad is coupled to the gate of the first gallium nitride high electron mobility transistor through a first resistor, and wherein a complementary control pad is coupled to the gate of the second gallium nitride high electron mobility transistor through a second resistor.
The monolithic high power radio frequency switch of Claim 1, wherein each of the first and second gallium nitride high electron mobility transistors has a gate to drain spacing LGD that is equal to a gate to source spacing L G s of the respective first and second gallium nitride high electron mobility transister transistors.
The monolithic high power radio frequency switch of Claim 1, wherein each of the first and second gallium nitride high electron mobility transistors has a serpentine gate pattern.
The monolithic high power radio frequency switch of Claim 1, wherein the monolithic high power radio frequency switch demonstrates substantially linear transmission of over 20 watts of RF signal input power over a frequency range from 2.5GHz to 4.0 GHz.
The monolithic high power radio frequency switch of Claim 1, wherein the monolithic high power radio frequency switch demonstrates transmission loss of less than -0.4 dB for RF signals up to 4 GHz.
The monolithic high power radio frequency switch of Claim 1, wherein the monolithic high power radio frequency switch demonstrates better than -8 dB input and output mismatch error at a frequency between 2.0 GHz and 4.0 GHz.
In re: Thomas Smith et al. Application No.: 13/110,573 Filing Date: Page 4 11. The high power radio frequency switch of Claim 1, wherein the R F output pad comprises a first R F output pad, the switch further comprising: a second R F output pad and a complementary control pad on the substrate; and third and fourth gallium nitride high electron mobility transistors on the substrate, each of the third and fourth gallium nitride high electron mobility transistors including a respective source, drain and gate terminal; wherein: the drai ' n terminal of the third gallium nitride high electron mobility transistor is coupled to the drain terminal of the first gallium nitride high electron mobility transistor; the source terminal of the third gallium nitride high electron mobility transistor is coupled to the drain terminal of the fourth gallium nitride high electron mobility transistor; the source terminal of the fourth gallium nitride high electron mobility transistor is coupled to ground; the second R F output pad is coupled to the source terminal of the third gallium nitride high electron mobility transistor and to the drain terminal of the fourth gallium nitride high electron mobility transistor; the control pad is coupled to the gate of the fourth gallium nitride high electron mobility transistor; and the complementary control pad is coupled to the gate of the third gallium nitride high electron mobility transistor.
A high power radio frequency switch, comprising: first and second gallium nitride high electron mobility transistors, each of the first and second gallium nitride high electron mobility transistors including a respective source, drain and gate terminal, wherein the source terminal of the first gallium nitride high electron mobility transistor is coupled to the drain terminal of the second gallium nitride high electron mobility transistor, and the source terminal of the second gallium nitride high electron mobility transistor is coupled to ground; In re: Thomas Smith et al. Application No.: 13/110,573 Filing Date: Pag e 6 an R F input pad coupled to the drain terminal of the first second gallium nitride high electron mobility transistor; an R F output pad coupled to the source terminal of the first gallium nitride high electron mobility transistor and the drain terminal of the second gallium nitride high electron mobility transistor; a control pad coupled to the gate of the first gallium nitride high electron mobility transistor; and a complementary control pad coupled to the gate of the second gallium nitride high electron mobility transistor.
Layer stacks claimed or described, ordered top of device to substrate.
monolithic high power RF switch (SPST/single-arm, two GaN HEMT series-shunt)
monolithic high power RF SPDT switch (four GaN HEMT)
Materials described outside the worked examples.
gallium nitride
GaN
silicon carbide
SiC
Measurements and analyses referenced in the patent, with their drawing references.
Figure 6 shows a layout drawing of the details of the gate location in the channel of a FET according to some embodiments showing its location at the midpoint between the source and drain terminals of the transistor (i.e. LG s = LGD).
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
substantially linear RF transmission power | ≥ 20 W | — |
transmission loss | <-0.4 dB | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,421,122Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows the circuit topology of a device according to some embodiments.
Figure 2 shows a layout drawing of a monolithic die according to some embodiments.
Figure 3 shows the measured power handing of the SPDT switch circuit of
Figures 4 and 5 show wafer averaged small signal s-parameter measurements of transmission and mismatch on the input and the output of the selected path of the SPDT switch circuit of
Figure 6 shows a layout drawing of the details of the gate location in the channel of a FET according to some embodiments showing its location at the midpoint between the source and drain terminals of the transistor (i.e. LG s = LGD).
Figure 7 illustrates a serpentine gate layout in accordance with some embodiments.
Figure 8 shows a layout drawing of a monolithic die having a serpentine gate layout according to some embodiments.
Figures 9A and 9B are graphs that illustrate transmission versus input drive power for a switch having a layout as shown in
Figure 10 A is a graph that illustrates wafer average of measured SPDT switch transmission verses input signal frequency for a switch having a layout as shown in
Figures 10 B and 1 O C are graphs that illustrate wafer average of measured SPDT switch input and output mismatch for a switch having a layout as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A monolithic high power radio frequency switch, comprising: a substrate; first and second gallium nitride high electron mobility transistors on the substrate, each of the first and second gallium nitride high electron mobility transistors including a respective source, drain and gate te rm inal, wherein the source terminal of the first gallium nitride high electron mobility transistor is coupled to the drain terminal of the second gallium nitride high electron mobility transistor, and the source terminal of the second gallium nitride high electron mobility transistor is coupled to ground; an RF input pad coupled to the drain terminal of the first gallium nitride high electron mobility transistor; an RF output pad coupled to the source terminal of the first gallium nitride high electron mobility transistor and the drain terminal of the second gallium nitride high electron mobility transistor; and a control pad coupled to the gate of the first gallium nitride high electron mobility transistor.
The monolithic high power radio frequency switch of Claim 1, wherein the RF input pad is coupled to the drain terminal of the first gallium nitride high electron mobility transistor through a first spiral inductor loop, and wherein the RF output pad is coupled to the source terminal of the first gallium nitride high electron mobility transistor and the drain terminal of the second gallium nitride high electron mobility transistor through a second spiral inductor l oop.
The monolithic high power radio frequency switch of Claim 1, wherein the control pad is coupled to the gate of the first gallium nitride high electron mobility transistor through a first resistor, and wherein a complementary control pad is coupled to the gate of the second gallium nitride high electron mobility transistor through a second resistor.
The monolithic high power radio frequency switch of Claim 1, wherein each of the first and second gallium nitride high electron mobility transistors has a gate to drain spacing LGD that is equal to a gate to source spacing L G s of the respective first and second gallium nitride high electron mobility transister transistors.
The monolithic high power radio frequency switch of Claim 1, wherein each of the first and second gallium nitride high electron mobility transistors has a serpentine gate pattern.
The monolithic high power radio frequency switch of Claim 1, wherein the monolithic high power radio frequency switch demonstrates substantially linear transmission of over 20 watts of RF signal input power over a frequency range from 2.5GHz to 4.0 GHz.
The monolithic high power radio frequency switch of Claim 1, wherein the monolithic high power radio frequency switch demonstrates transmission loss of less than -0.4 dB for RF signals up to 4 GHz.
The monolithic high power radio frequency switch of Claim 1, wherein the monolithic high power radio frequency switch demonstrates better than -8 dB input and output mismatch error at a frequency between 2.0 GHz and 4.0 GHz.
In re: Thomas Smith et al. Application No.: 13/110,573 Filing Date: Page 4 11. The high power radio frequency switch of Claim 1, wherein the R F output pad comprises a first R F output pad, the switch further comprising: a second R F output pad and a complementary control pad on the substrate; and third and fourth gallium nitride high electron mobility transistors on the substrate, each of the third and fourth gallium nitride high electron mobility transistors including a respective source, drain and gate terminal; wherein: the drai ' n terminal of the third gallium nitride high electron mobility transistor is coupled to the drain terminal of the first gallium nitride high electron mobility transistor; the source terminal of the third gallium nitride high electron mobility transistor is coupled to the drain terminal of the fourth gallium nitride high electron mobility transistor; the source terminal of the fourth gallium nitride high electron mobility transistor is coupled to ground; the second R F output pad is coupled to the source terminal of the third gallium nitride high electron mobility transistor and to the drain terminal of the fourth gallium nitride high electron mobility transistor; the control pad is coupled to the gate of the fourth gallium nitride high electron mobility transistor; and the complementary control pad is coupled to the gate of the third gallium nitride high electron mobility transistor.
A high power radio frequency switch, comprising: first and second gallium nitride high electron mobility transistors, each of the first and second gallium nitride high electron mobility transistors including a respective source, drain and gate terminal, wherein the source terminal of the first gallium nitride high electron mobility transistor is coupled to the drain terminal of the second gallium nitride high electron mobility transistor, and the source terminal of the second gallium nitride high electron mobility transistor is coupled to ground; In re: Thomas Smith et al. Application No.: 13/110,573 Filing Date: Pag e 6 an R F input pad coupled to the drain terminal of the first second gallium nitride high electron mobility transistor; an R F output pad coupled to the source terminal of the first gallium nitride high electron mobility transistor and the drain terminal of the second gallium nitride high electron mobility transistor; a control pad coupled to the gate of the first gallium nitride high electron mobility transistor; and a complementary control pad coupled to the gate of the second gallium nitride high electron mobility transistor.
Layer stacks claimed or described, ordered top of device to substrate.
monolithic high power RF switch (SPST/single-arm, two GaN HEMT series-shunt)
monolithic high power RF SPDT switch (four GaN HEMT)
Materials described outside the worked examples.
gallium nitride
GaN
silicon carbide
SiC
Measurements and analyses referenced in the patent, with their drawing references.
Figure 6 shows a layout drawing of the details of the gate location in the channel of a FET according to some embodiments showing its location at the midpoint between the source and drain terminals of the transistor (i.e. LG s = LGD).
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
substantially linear RF transmission power | ≥ 20 W | — |
transmission loss | <-0.4 dB | — |
Related documents with shared materials, methods, properties, or citations.
| better than -8 dB |
| — |
RF insertion loss (embodiment) | <0.7 dB (in some cases <0.5 dB) | — |
RF isolation (embodiment) | >30 dB | — |
RF match (embodiment) | >15 dB | — |
third-order intercept point (embodiment) | >60 dBm | — |
| better than -8 dB |
| — |
RF insertion loss (embodiment) | <0.7 dB (in some cases <0.5 dB) | — |
RF isolation (embodiment) | >30 dB | — |
RF match (embodiment) | >15 dB | — |
third-order intercept point (embodiment) | >60 dBm | — |
| better than -8 dB |
| — |
RF insertion loss (embodiment) | <0.7 dB (in some cases <0.5 dB) | — |
RF isolation (embodiment) | >30 dB | — |
RF match (embodiment) | >15 dB | — |
third-order intercept point (embodiment) | >60 dBm | — |
| better than -8 dB |
| — |
RF insertion loss (embodiment) | <0.7 dB (in some cases <0.5 dB) | — |
RF isolation (embodiment) | >30 dB | — |
RF match (embodiment) | >15 dB | — |
third-order intercept point (embodiment) | >60 dBm | — |