OPERATIONAL GALLIUM NITRIDE DEVICES

Gerald Deboy

Patent

Atlas literature

Patent

US 9,911,731

OPERATIONAL GALLIUM NITRIDE DEVICES

Gerald Deboy

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1 is a block diagram illustrating example system I for powering l o ad 4, in accordance with one or more aspects of the present disclosure. In the example …

FIG. 2

FIG. 2. In theexample of

FIG. 3

FIG. 3 is a block diagram illustrating an example of a single phase rectiﬁer as one example of power circuit 6 of

FIG. 4

FIG. 4 B, graph 61 B represents the voltage and graph 62 B represents the current. 19 Docket No.. 1186-068 US02/20 13P₅₂₀₁₄LUS01 [0075 1 In some examples, …

FIG. 5

FIG. 5 is a block diagram illustrating an example of a totem pole power factor correction stage as an additional example of the power circuit of FI G. 2. 1 …

FIG. 6

FIG. 6 is a block diagram illustrating an example of an inverter as an additional example of the power circuit of FI G. 2. 1 0017 1

FIG. 7

FIG. 7 is a block diagram illustrating an example of a three phase Vienna rectiﬁer as an additional example of the power circuit of FI G. 2 3 Docket No.. …

FIG. 8

FIG. 8B. In the example of

FIG. 9

FIG. 9A. In yet other examples, potential V- may be the lowest potential available to power circuit 6. In some examples, potential V- may not be the lowest …

FIG. 10

FIG. 10 is a cross sectional layered view illustrating an example of a diode-basedsemiconductor body SVG …

FIG. 11

FIGS. 11 -13 are block diagrams each illustrating example semiconductor packages that include the example power circuit 6 shown in

FIG. 12

FIG. 12, semiconductor package 160A includes semiconductor body 111 F, which may correspond to semiconductor body 111, GaN substrate 112, common substrate 114, …

FIG. 13

FIG. 13, semiconductor package 1 60B also includes sense-source 1 56A, 1 56B and gate 1 26A, 1 6B as described in

FIG. 14

FIG. 14, package 170 includes three GaN devices, such as G aN bidirectional switch 174, and G aN diodes 168A, 1 68B toward potential V-, with dotted lines to …

FIG. 15

FIG. 15 is a ﬂo w chart illustrating example operations for reducing current collapse of an example power circuit, in accordance with one or more aspects of …

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

1 independent · 16 dependent

1
IndependentGaNGaN device (method claim context)
A method comprising: determining a most negative potential at any of a plurality of load terminals of one or more Gallium Nitride (GaN) devices, wherein: each of the plurality of load terminals is coupled to a load; the one or more GaN devices are adjacent to a front side of a common substrate of a semiconductor body; the one or more GaN devices comprise a plurality of input terminals that are each conﬁgured to couple to a source that is conﬁgured to produce power for the load; and the one or more GaN devices comprise one or more gate terminals in addition to the plurality of input terminals and the plurality of load terminals, the one or more gate terminals being conﬁgured to receive a gate control signal from one or more drivers; and applying, as a constant potential, the most negative potential to a node on a back side of the common substrate. Currently amended
1. 2
  Dependent← claim 1GaNGaN device (method claim context)
  The method of claim 1, wherein the one or more GaN devices comprise one or more GaN switches arranged in at least one half-bridge conﬁguration. Original
2. 3
  Dependent← claim 1, claim 2GaNGaN device (method claim context)
  The method of claim 2, wherein the one or more GaN switches are arranged in three half-bridge conﬁgurations. Claim 4: The method of claim 1, wherein the plurality of load terminals is selected from the group consisting o f: one or more drain terminals of the one or more GaN devices, one or more source terminals of the one or more GaN devices, one or more cathode electrodes of the one or more GaN devices, and one or more anode electrodes of the one or more GaN devices. Currently amended
3. 5
  Dependent← claim 1GaNGaN device (method claim context)
  The method of claim 1, wherein the most negative potential is a ﬁrst most negative potential at a ﬁrst terminal of the plurality load terminals, the method further comprising: after applying the ﬁrst most negative potential to the node on the back side of the common substrate, determining a second most negative potential at any of the plurality of load terminals, wherein the second most negative potential is at a diﬀerent load terminal of the plurality of load terminals than the ﬁrst terminal; and applying, as the constant potential, the second most negative potential to the node on the back side of the common substrate. Currently amended
4. 6
  Dependent← claim 1GaNGaN device (method claim context)Power circuit with GaN devices and controller
  The method of claim 1, wherein applying the most negative potential to the node on the backside of the common substrate comprises electrically coupling the node on the common substrate to a particular terminal from the plurality of load terminals that is at the most negative potential. Claim 7: A power circuit comprising: o e or more drivers; a semiconductor body, the semiconductor body comprising: a common substrate; and a Gallium Nitride (GaN) based substrate including one or more GaN devices adjacent to a front side of the common substrate, wherein the one or more GaN devices c mprise: one or more gate terminals conﬁgured to receive a gate control signal from the one or more drivers; and a plurality of input terminals conﬁgured to couple to a power source that is conﬁgured to produce power for the load; a plurality of load terminals conﬁgured to couple to a load; and a controller conﬁgured to: determine a most negative potential at any of the plurality of l o d terminals; and apply, as a constant potential, the most negative potential to a node on a back side of the common substrate. Currently amended
8
Dependent← claim 7GaNPower circuit with GaN devices and controller
The power circuit of claim 7, wherein the one or more GaN devices comprise one or more GaN switches arranged in at least one half-bridge conﬁguration. Original
1. 9
  Dependent← claim 8GaNPower circuit with GaN devices and controller
  The power circuit of claim 8, wherein the one or more GaN switches are arranged i three half-bridge conﬁgurations. Original
10
Dependent← claim 7GaNPower circuit with GaN devices and controller
The power circuit of claim 7, wherein the plurality of load terminals are selected from the group consisting o f: one or more drain terminals of the one or more GaN devices, one or more source terminals of the one or more GaN devices, one or more cathode electrodes of the one or more GaN devices, and one or more anode electrodes of the one or more GaN devices. Currently amended
11
Dependent← claim 7GaNPower circuit with GaN devices and controller
The power circuit of claim 7, wherein the most negative potential is a ﬁrst most negative potential at a ﬁrst terminal of the plurality of load terminals, the controller is further conﬁgured to: after applying the ﬁrst most negative potential to the node on the back side of the common substrate, determine a second most negative potential at any of the plurality of load terminals, wherein the second most negative potential is at a diﬀerent terminal of the plurality of load terminals than the ﬁrst load terminal; and applying, as the constant potential, the second most negative potential to the node on the back side of the common substrate. Currently amended
12
Dependent← claim 7GaNPower circuit with GaN devices and controller
The power circuit of claim 7, wherein the controller is further conﬁgured to apply the most negative potential to the node on the backside of the common substrate by at least electrically coupling the node on the common substrate to a particular terminal from the plurality of load terminals that is at the most negative potential by closing or opening a switch to couple [[a]] t he node on [[of]] the common substrate to the particular terminal. Currently amended
13
Dependent← claim 7GaNPower circuit with GaN devices and controllerSystem with GaN devices (means-plus-function)
The power circuit of claim 7, wherein: the one or more GaN devices comprise at least a portion of a DC-DC or DC-AC power circuit and the plurality of load terminals are an input stage of the DC-DC or DC-AC power circuit; or the one or more GaN devices comprise at least a portion of an AC-DC power circuit and the plurality of load terminals are an output stage of the AC-DC power circuit. Claim 14: A system comprising: means for determining a most negative potential at any of a plurality of load terminals of one or more Gallium Nitride (GaN) devices, wherein: each of the plurality of load terminals is coupled to a load; the one or more GaN devices are adjacent to a front side of a common substrate of a semiconductor body; the one or more GaN devices comprise a plurality of input terminals that are each conﬁgured to couple to a source that is conﬁgured to produce power for the load; and the one or more GaN devices comprise one or more gate terminals in addition to the plurality of input terminals and the plurality of load terminals, the one or more gate terminals being conﬁgured to receive a gate control signal from one or more drivers; and means for applying, as a constant potential, the most negative potential to a node on a back side of the common substrate. Currently amended
15
Dependent← claim 14GaNSystem with GaN devices (means-plus-function)
The system of claim 14, wherein the one or more GaN devices comprise one or more GaN switches arranged in at least one half-bridge conﬁguration. Original
1. 16
  Dependent← claim 15GaNSystem with GaN devices (means-plus-function)
  The system of claim 15, wherein the one or more GaN switches are arranged in three half-bridge conﬁgurations. Original
17
Dependent← claim 14GaNSystem with GaN devices (means-plus-function)
The system of claim 14, wherein the plurality of load terminals are selected from the group consisting o f: one or more drain terminals of the one or more GaN devices, one or more source terminals of the one or more GaN devices, one or more cathode electrodes of the one or more GaN devices, and one or more anode electrodes of the one or more GaN devices. Currently amended
18
Dependent← claim 14GaNSystem with GaN devices (means-plus-function)
The system of claim 14, wherein the most negative potential is a ﬁrst most negative potential at a ﬁrst terminal of the plurality of load terminals, the system further comprising: means for after applying the ﬁrst most negative potential to the node on the back side of the common substrate, determining a second most negative potential at any of the plurality of load terminals, wherein the second most negative potential is at a diﬀerent terminal of the plurality of load terminals than the ﬁrst terminal; and means for applying, as the constant potential, the second most negative potential to the node on the back side of the common substrate. Currently amended
19
Dependent← claim 14GaNSystem with GaN devices (means-plus-function)
The system of claim 14, wherein the means for applying the most negative potential to the node on the backside of the common substrate comprise means for electrically coupling the node on the common substrate t o a particular terminal from the plurality of load terminals that is at the most negative potential. Currently amended
1. 20
  Dependent← claim 19GaNSystem with GaN devices (means-plus-function)
  The system circuit of claim 19, wherein the means for electrically coupling the node on the common substrate to the particular terminal comprises means for closing or opening a switch to couple [[a]] the node [[of]] on the common substrate to the particular terminal. Currently amended

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN device (method claim context)

GaNGaN-based substrate with GaN devices (front side)

Sicommon substrate

Power circuit with GaN devices and controller

GaNGaN-based substrate with GaN devices (front side)

Sicommon substrate

System with GaN devices (means-plus-function)

Materials

Materials described outside the worked examples.

Gallium Nitride

GaN

Semiconductor Device Material

Aluminum Gallium Nitride

AlGaN

Characterization

Measurements and analyses referenced in the patent, with their drawing references.

fet electrical

Fet Electrical

FIG. 2. In theexample of

Figure references

FIG. 2

GaNGaN

fet electrical

Why these are connected

Related documents with shared materials, methods, properties, or citations.

OPERATIONAL GALLIUM NITRIDE DEVICES | Matter42 Literature