Patent
Atlas literature
Patent
US 12,477,816 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an electric diagram of an example of a circuit comprising a monolithic component integrating a gallium 5 nitride field-effect power transistor;
FIG. 2 is an electric diagram of an example of a circuit comprising an embodiment of a monolithic component integrating a gallium nitride field-effect power …
FIG. 3 illustrates a step of a method of manufacturing a 10 monolithic component integrating a gallium nitride field- effect power transistor according to an …
FIG. 4 illustrates another step of the method of
FIG. 5 illustrates another step of the method of
FIG. 6 illustrates another step of the method of
FIG. 7 illustrates another step of the method of
FIG. 8 illustrates a variation of the step of
FIG. 9 illustrates another step of the method of
FIG. 10 illustrates another step of the method of
FIG. 11 illustrates another step of the method of
FIG. 12 illustrates a variation of the method of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A circuit, comprising: an electronic component that includes: gallium nitride substrate; an aluminum-gallium nitride layer; first and second connection terminals on the gallium nitride substrate; a field-effect power transistor on the gallium nitride substrate and including a gate structure, source, and drain, wherein the gate structure is directly on the gallium nitride substrate and includes a gate dielec-tric layer and a gate electrode; a passivation layer formed on the gate structure of the field-effect power transistor; a first Schottky diode formed on the gallium nitride substrate and coupled between and to both the first connection terminal and the gate electrode of the field-effect power transistor; and a second Schottky diode formed on the gallium nitride substrate and coupled between and to both the sec-ond connection terminal and the gate electrode of the field-effect power transistor; and a first capacitor coupled between and to both the first connection terminal and the source of the field-effect power transistor, the source and drain of the field-effect power transistor and anode and cathode terminals of each of the first Schottky diode and the second Schottky diode are in respective trenches extending in the passivation layer to the aluminum-gallium nitride layer.
The circuit of claim 1, further comprising a second capacitor coupled between and to both the second connec-tion terminal and the source of the field-effect power tran-sistor.
The circuit of claim 1, further comprising a control circuit that includes: a first connection terminal coupled to the first connection terminal of the electronic component and configured to supply a first fixed voltage corresponding to a voltage for controlling the field-effect power transistor to a first state, on or off; 5 a second connection terminal coupled to the gate elec-trode of the field-effect power transistor; and a first controlled switch coupled between the first con-nection terminal of the control circuit and the second connection terminal of the control circuit.
The circuit of claim 1, wherein the first capacitor is integrated in or on the gallium nitride substrate.
The circuit of claim 1, wherein: the second Schottky diode has an electrode in a first trench of the respective trenches that extends through the passivation layer and into the aluminum-gallium nitride layer.
The circuit of claim 1, wherein the second Schottky diode has a first electrode coupled to the gate electrode of the field-effect power transistor and a second electrode coupled to the second connection terminal.
A circuit, comprising: an electronic component that includes: a gallium nitride substrate; first and second connection terminals formed on the gallium nitride substrate; a field-effect power transistor formed on the gallium nitride substrate and including a gate, source, and drain, wherein the gate is formed directly on the gallium nitride substrate; a first Schottky diode formed on the gallium nitride substrate and coupled between the first connection terminal and the gate of the field-effect power tran-sistor; and a second Schottky diode formed on the gallium nitride substrate and coupled between the second connec-tion terminal and the gate of the field-effect power transistor; and a first capacitor coupled between the first connection terminal and the source of the field-effect power tran-sistor, wherein the second Schottky diode has an electrode formed in a first trench in the gallium nitride substrate, and the gate of the field-effect power transistor is formed in a second trench in the gallium nitride substrate.
The circuit of claim 8, further comprising a second capacitor coupled between the second connection terminal and the source of the field-effect power transistor.
The circuit of claim 8, further comprising a control circuit that includes: 65 a first connection terminal connected to the first connec-tion terminal of the electronic component and config-B₂ ured to supply a first fixed voltage corresponding to a voltage for controlling the field-effect power transistor to a first state, on or off; a second connection terminal coupled to the gate of the field-effect power transistor; and a first controlled switch coupling the first connection terminal of the control circuit to the second connection terminal of the control circuit.
The circuit of claim 8, wherein the first capacitor is integrated in or on the gallium nitride substrate.
The circuit of claim 8, wherein the second Schottky diode has a first electrode connected to the gate of the field-effect power transistor and a second electrode con-nected to the second connection terminal.
A circuit, comprising: a monolithic component, including: a first substrate; a first plurality of terminals in the first substrate; a transistor coupled to the first plurality of terminals, the transistor being directly on the first substrate; a first Schottky diode having an anode coupled to the transistor; and a second Schottky diode having a cathode coupled to the transistor and to the anode of the first Schottky diode, wherein the second Schottky diode has an electrode formed in a first trench in a gallium nitride substrate, and a gate of the transistor is formed in a second trench in the gallium nitride substrate; a control circuit, including: a first connection terminal coupled to the first Schottky diode and to a first voltage; a second connection terminal coupled directly to a first one of the first plurality of terminals; and a first switch coupled between the first and second connection terminals; a first capacitor coupled between a cathode of the first Schottky diode and a source of the transistor, the first connection terminal being coupled between the cathode of the first Schottky diode and the first capacitor; and a second capacitor coupled between an anode of the second Schottky diode and a source of the transistor.
The circuit of claim 14, further comprising a first metal terminal coupled to a cathode of the first Schottky diode and a second metal terminal coupled to an anode of the second Schottky diode.
The circuit of claim 14, wherein the control circuit is in a second substrate distinct from the first substrate.
The circuit of claim 14, wherein the second connec-tion terminal is coupled between the anode of the second Schottky diode and the second capacitor. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
monolithic GaN power transistor component with dual Schottky diode gate protection and passivation trench structure
monolithic GaN field-effect power transistor with dual Schottky diodes (trench gate and trench diode electrode)
monolithic GaN transistor with dual Schottky diodes and full gate-drive control circuit
Materials described outside the worked examples.
gallium nitride
GaN
aluminum-gallium nitride
AlGaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is an electric diagram of an example of a circuit comprising a monolithic component integrating a gallium 5 nitride field-effect power transistor;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 2–15 V | — |
Voltage |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 52
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,477,816 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an electric diagram of an example of a circuit comprising a monolithic component integrating a gallium 5 nitride field-effect power transistor;
FIG. 2 is an electric diagram of an example of a circuit comprising an embodiment of a monolithic component integrating a gallium nitride field-effect power …
FIG. 3 illustrates a step of a method of manufacturing a 10 monolithic component integrating a gallium nitride field- effect power transistor according to an …
FIG. 4 illustrates another step of the method of
FIG. 5 illustrates another step of the method of
FIG. 6 illustrates another step of the method of
FIG. 7 illustrates another step of the method of
FIG. 8 illustrates a variation of the step of
FIG. 9 illustrates another step of the method of
FIG. 10 illustrates another step of the method of
FIG. 11 illustrates another step of the method of
FIG. 12 illustrates a variation of the method of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A circuit, comprising: an electronic component that includes: gallium nitride substrate; an aluminum-gallium nitride layer; first and second connection terminals on the gallium nitride substrate; a field-effect power transistor on the gallium nitride substrate and including a gate structure, source, and drain, wherein the gate structure is directly on the gallium nitride substrate and includes a gate dielec-tric layer and a gate electrode; a passivation layer formed on the gate structure of the field-effect power transistor; a first Schottky diode formed on the gallium nitride substrate and coupled between and to both the first connection terminal and the gate electrode of the field-effect power transistor; and a second Schottky diode formed on the gallium nitride substrate and coupled between and to both the sec-ond connection terminal and the gate electrode of the field-effect power transistor; and a first capacitor coupled between and to both the first connection terminal and the source of the field-effect power transistor, the source and drain of the field-effect power transistor and anode and cathode terminals of each of the first Schottky diode and the second Schottky diode are in respective trenches extending in the passivation layer to the aluminum-gallium nitride layer.
The circuit of claim 1, further comprising a second capacitor coupled between and to both the second connec-tion terminal and the source of the field-effect power tran-sistor.
The circuit of claim 1, further comprising a control circuit that includes: a first connection terminal coupled to the first connection terminal of the electronic component and configured to supply a first fixed voltage corresponding to a voltage for controlling the field-effect power transistor to a first state, on or off; 5 a second connection terminal coupled to the gate elec-trode of the field-effect power transistor; and a first controlled switch coupled between the first con-nection terminal of the control circuit and the second connection terminal of the control circuit.
The circuit of claim 1, wherein the first capacitor is integrated in or on the gallium nitride substrate.
The circuit of claim 1, wherein: the second Schottky diode has an electrode in a first trench of the respective trenches that extends through the passivation layer and into the aluminum-gallium nitride layer.
The circuit of claim 1, wherein the second Schottky diode has a first electrode coupled to the gate electrode of the field-effect power transistor and a second electrode coupled to the second connection terminal.
A circuit, comprising: an electronic component that includes: a gallium nitride substrate; first and second connection terminals formed on the gallium nitride substrate; a field-effect power transistor formed on the gallium nitride substrate and including a gate, source, and drain, wherein the gate is formed directly on the gallium nitride substrate; a first Schottky diode formed on the gallium nitride substrate and coupled between the first connection terminal and the gate of the field-effect power tran-sistor; and a second Schottky diode formed on the gallium nitride substrate and coupled between the second connec-tion terminal and the gate of the field-effect power transistor; and a first capacitor coupled between the first connection terminal and the source of the field-effect power tran-sistor, wherein the second Schottky diode has an electrode formed in a first trench in the gallium nitride substrate, and the gate of the field-effect power transistor is formed in a second trench in the gallium nitride substrate.
The circuit of claim 8, further comprising a second capacitor coupled between the second connection terminal and the source of the field-effect power transistor.
The circuit of claim 8, further comprising a control circuit that includes: 65 a first connection terminal connected to the first connec-tion terminal of the electronic component and config-B₂ ured to supply a first fixed voltage corresponding to a voltage for controlling the field-effect power transistor to a first state, on or off; a second connection terminal coupled to the gate of the field-effect power transistor; and a first controlled switch coupling the first connection terminal of the control circuit to the second connection terminal of the control circuit.
The circuit of claim 8, wherein the first capacitor is integrated in or on the gallium nitride substrate.
The circuit of claim 8, wherein the second Schottky diode has a first electrode connected to the gate of the field-effect power transistor and a second electrode con-nected to the second connection terminal.
A circuit, comprising: a monolithic component, including: a first substrate; a first plurality of terminals in the first substrate; a transistor coupled to the first plurality of terminals, the transistor being directly on the first substrate; a first Schottky diode having an anode coupled to the transistor; and a second Schottky diode having a cathode coupled to the transistor and to the anode of the first Schottky diode, wherein the second Schottky diode has an electrode formed in a first trench in a gallium nitride substrate, and a gate of the transistor is formed in a second trench in the gallium nitride substrate; a control circuit, including: a first connection terminal coupled to the first Schottky diode and to a first voltage; a second connection terminal coupled directly to a first one of the first plurality of terminals; and a first switch coupled between the first and second connection terminals; a first capacitor coupled between a cathode of the first Schottky diode and a source of the transistor, the first connection terminal being coupled between the cathode of the first Schottky diode and the first capacitor; and a second capacitor coupled between an anode of the second Schottky diode and a source of the transistor.
The circuit of claim 14, further comprising a first metal terminal coupled to a cathode of the first Schottky diode and a second metal terminal coupled to an anode of the second Schottky diode.
The circuit of claim 14, wherein the control circuit is in a second substrate distinct from the first substrate.
The circuit of claim 14, wherein the second connec-tion terminal is coupled between the anode of the second Schottky diode and the second capacitor. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
monolithic GaN power transistor component with dual Schottky diode gate protection and passivation trench structure
monolithic GaN field-effect power transistor with dual Schottky diodes (trench gate and trench diode electrode)
monolithic GaN transistor with dual Schottky diodes and full gate-drive control circuit
Materials described outside the worked examples.
gallium nitride
GaN
aluminum-gallium nitride
AlGaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is an electric diagram of an example of a circuit comprising a monolithic component integrating a gallium 5 nitride field-effect power transistor;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 2–15 V | — |
Voltage |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 52
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,477,816 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an electric diagram of an example of a circuit comprising a monolithic component integrating a gallium 5 nitride field-effect power transistor;
FIG. 2 is an electric diagram of an example of a circuit comprising an embodiment of a monolithic component integrating a gallium nitride field-effect power …
FIG. 3 illustrates a step of a method of manufacturing a 10 monolithic component integrating a gallium nitride field- effect power transistor according to an …
FIG. 4 illustrates another step of the method of
FIG. 5 illustrates another step of the method of
FIG. 6 illustrates another step of the method of
FIG. 7 illustrates another step of the method of
FIG. 8 illustrates a variation of the step of
FIG. 9 illustrates another step of the method of
FIG. 10 illustrates another step of the method of
FIG. 11 illustrates another step of the method of
FIG. 12 illustrates a variation of the method of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A circuit, comprising: an electronic component that includes: gallium nitride substrate; an aluminum-gallium nitride layer; first and second connection terminals on the gallium nitride substrate; a field-effect power transistor on the gallium nitride substrate and including a gate structure, source, and drain, wherein the gate structure is directly on the gallium nitride substrate and includes a gate dielec-tric layer and a gate electrode; a passivation layer formed on the gate structure of the field-effect power transistor; a first Schottky diode formed on the gallium nitride substrate and coupled between and to both the first connection terminal and the gate electrode of the field-effect power transistor; and a second Schottky diode formed on the gallium nitride substrate and coupled between and to both the sec-ond connection terminal and the gate electrode of the field-effect power transistor; and a first capacitor coupled between and to both the first connection terminal and the source of the field-effect power transistor, the source and drain of the field-effect power transistor and anode and cathode terminals of each of the first Schottky diode and the second Schottky diode are in respective trenches extending in the passivation layer to the aluminum-gallium nitride layer.
The circuit of claim 1, further comprising a second capacitor coupled between and to both the second connec-tion terminal and the source of the field-effect power tran-sistor.
The circuit of claim 1, further comprising a control circuit that includes: a first connection terminal coupled to the first connection terminal of the electronic component and configured to supply a first fixed voltage corresponding to a voltage for controlling the field-effect power transistor to a first state, on or off; 5 a second connection terminal coupled to the gate elec-trode of the field-effect power transistor; and a first controlled switch coupled between the first con-nection terminal of the control circuit and the second connection terminal of the control circuit.
The circuit of claim 1, wherein the first capacitor is integrated in or on the gallium nitride substrate.
The circuit of claim 1, wherein: the second Schottky diode has an electrode in a first trench of the respective trenches that extends through the passivation layer and into the aluminum-gallium nitride layer.
The circuit of claim 1, wherein the second Schottky diode has a first electrode coupled to the gate electrode of the field-effect power transistor and a second electrode coupled to the second connection terminal.
A circuit, comprising: an electronic component that includes: a gallium nitride substrate; first and second connection terminals formed on the gallium nitride substrate; a field-effect power transistor formed on the gallium nitride substrate and including a gate, source, and drain, wherein the gate is formed directly on the gallium nitride substrate; a first Schottky diode formed on the gallium nitride substrate and coupled between the first connection terminal and the gate of the field-effect power tran-sistor; and a second Schottky diode formed on the gallium nitride substrate and coupled between the second connec-tion terminal and the gate of the field-effect power transistor; and a first capacitor coupled between the first connection terminal and the source of the field-effect power tran-sistor, wherein the second Schottky diode has an electrode formed in a first trench in the gallium nitride substrate, and the gate of the field-effect power transistor is formed in a second trench in the gallium nitride substrate.
The circuit of claim 8, further comprising a second capacitor coupled between the second connection terminal and the source of the field-effect power transistor.
The circuit of claim 8, further comprising a control circuit that includes: 65 a first connection terminal connected to the first connec-tion terminal of the electronic component and config-B₂ ured to supply a first fixed voltage corresponding to a voltage for controlling the field-effect power transistor to a first state, on or off; a second connection terminal coupled to the gate of the field-effect power transistor; and a first controlled switch coupling the first connection terminal of the control circuit to the second connection terminal of the control circuit.
The circuit of claim 8, wherein the first capacitor is integrated in or on the gallium nitride substrate.
The circuit of claim 8, wherein the second Schottky diode has a first electrode connected to the gate of the field-effect power transistor and a second electrode con-nected to the second connection terminal.
A circuit, comprising: a monolithic component, including: a first substrate; a first plurality of terminals in the first substrate; a transistor coupled to the first plurality of terminals, the transistor being directly on the first substrate; a first Schottky diode having an anode coupled to the transistor; and a second Schottky diode having a cathode coupled to the transistor and to the anode of the first Schottky diode, wherein the second Schottky diode has an electrode formed in a first trench in a gallium nitride substrate, and a gate of the transistor is formed in a second trench in the gallium nitride substrate; a control circuit, including: a first connection terminal coupled to the first Schottky diode and to a first voltage; a second connection terminal coupled directly to a first one of the first plurality of terminals; and a first switch coupled between the first and second connection terminals; a first capacitor coupled between a cathode of the first Schottky diode and a source of the transistor, the first connection terminal being coupled between the cathode of the first Schottky diode and the first capacitor; and a second capacitor coupled between an anode of the second Schottky diode and a source of the transistor.
The circuit of claim 14, further comprising a first metal terminal coupled to a cathode of the first Schottky diode and a second metal terminal coupled to an anode of the second Schottky diode.
The circuit of claim 14, wherein the control circuit is in a second substrate distinct from the first substrate.
The circuit of claim 14, wherein the second connec-tion terminal is coupled between the anode of the second Schottky diode and the second capacitor. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
monolithic GaN power transistor component with dual Schottky diode gate protection and passivation trench structure
monolithic GaN field-effect power transistor with dual Schottky diodes (trench gate and trench diode electrode)
monolithic GaN transistor with dual Schottky diodes and full gate-drive control circuit
Materials described outside the worked examples.
gallium nitride
GaN
aluminum-gallium nitride
AlGaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is an electric diagram of an example of a circuit comprising a monolithic component integrating a gallium 5 nitride field-effect power transistor;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 2–15 V | — |
Voltage |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 52
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,477,816 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an electric diagram of an example of a circuit comprising a monolithic component integrating a gallium 5 nitride field-effect power transistor;
FIG. 2 is an electric diagram of an example of a circuit comprising an embodiment of a monolithic component integrating a gallium nitride field-effect power …
FIG. 3 illustrates a step of a method of manufacturing a 10 monolithic component integrating a gallium nitride field- effect power transistor according to an …
FIG. 4 illustrates another step of the method of
FIG. 5 illustrates another step of the method of
FIG. 6 illustrates another step of the method of
FIG. 7 illustrates another step of the method of
FIG. 8 illustrates a variation of the step of
FIG. 9 illustrates another step of the method of
FIG. 10 illustrates another step of the method of
FIG. 11 illustrates another step of the method of
FIG. 12 illustrates a variation of the method of
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A circuit, comprising: an electronic component that includes: gallium nitride substrate; an aluminum-gallium nitride layer; first and second connection terminals on the gallium nitride substrate; a field-effect power transistor on the gallium nitride substrate and including a gate structure, source, and drain, wherein the gate structure is directly on the gallium nitride substrate and includes a gate dielec-tric layer and a gate electrode; a passivation layer formed on the gate structure of the field-effect power transistor; a first Schottky diode formed on the gallium nitride substrate and coupled between and to both the first connection terminal and the gate electrode of the field-effect power transistor; and a second Schottky diode formed on the gallium nitride substrate and coupled between and to both the sec-ond connection terminal and the gate electrode of the field-effect power transistor; and a first capacitor coupled between and to both the first connection terminal and the source of the field-effect power transistor, the source and drain of the field-effect power transistor and anode and cathode terminals of each of the first Schottky diode and the second Schottky diode are in respective trenches extending in the passivation layer to the aluminum-gallium nitride layer.
The circuit of claim 1, further comprising a second capacitor coupled between and to both the second connec-tion terminal and the source of the field-effect power tran-sistor.
The circuit of claim 1, further comprising a control circuit that includes: a first connection terminal coupled to the first connection terminal of the electronic component and configured to supply a first fixed voltage corresponding to a voltage for controlling the field-effect power transistor to a first state, on or off; 5 a second connection terminal coupled to the gate elec-trode of the field-effect power transistor; and a first controlled switch coupled between the first con-nection terminal of the control circuit and the second connection terminal of the control circuit.
The circuit of claim 1, wherein the first capacitor is integrated in or on the gallium nitride substrate.
The circuit of claim 1, wherein: the second Schottky diode has an electrode in a first trench of the respective trenches that extends through the passivation layer and into the aluminum-gallium nitride layer.
The circuit of claim 1, wherein the second Schottky diode has a first electrode coupled to the gate electrode of the field-effect power transistor and a second electrode coupled to the second connection terminal.
A circuit, comprising: an electronic component that includes: a gallium nitride substrate; first and second connection terminals formed on the gallium nitride substrate; a field-effect power transistor formed on the gallium nitride substrate and including a gate, source, and drain, wherein the gate is formed directly on the gallium nitride substrate; a first Schottky diode formed on the gallium nitride substrate and coupled between the first connection terminal and the gate of the field-effect power tran-sistor; and a second Schottky diode formed on the gallium nitride substrate and coupled between the second connec-tion terminal and the gate of the field-effect power transistor; and a first capacitor coupled between the first connection terminal and the source of the field-effect power tran-sistor, wherein the second Schottky diode has an electrode formed in a first trench in the gallium nitride substrate, and the gate of the field-effect power transistor is formed in a second trench in the gallium nitride substrate.
The circuit of claim 8, further comprising a second capacitor coupled between the second connection terminal and the source of the field-effect power transistor.
The circuit of claim 8, further comprising a control circuit that includes: 65 a first connection terminal connected to the first connec-tion terminal of the electronic component and config-B₂ ured to supply a first fixed voltage corresponding to a voltage for controlling the field-effect power transistor to a first state, on or off; a second connection terminal coupled to the gate of the field-effect power transistor; and a first controlled switch coupling the first connection terminal of the control circuit to the second connection terminal of the control circuit.
The circuit of claim 8, wherein the first capacitor is integrated in or on the gallium nitride substrate.
The circuit of claim 8, wherein the second Schottky diode has a first electrode connected to the gate of the field-effect power transistor and a second electrode con-nected to the second connection terminal.
A circuit, comprising: a monolithic component, including: a first substrate; a first plurality of terminals in the first substrate; a transistor coupled to the first plurality of terminals, the transistor being directly on the first substrate; a first Schottky diode having an anode coupled to the transistor; and a second Schottky diode having a cathode coupled to the transistor and to the anode of the first Schottky diode, wherein the second Schottky diode has an electrode formed in a first trench in a gallium nitride substrate, and a gate of the transistor is formed in a second trench in the gallium nitride substrate; a control circuit, including: a first connection terminal coupled to the first Schottky diode and to a first voltage; a second connection terminal coupled directly to a first one of the first plurality of terminals; and a first switch coupled between the first and second connection terminals; a first capacitor coupled between a cathode of the first Schottky diode and a source of the transistor, the first connection terminal being coupled between the cathode of the first Schottky diode and the first capacitor; and a second capacitor coupled between an anode of the second Schottky diode and a source of the transistor.
The circuit of claim 14, further comprising a first metal terminal coupled to a cathode of the first Schottky diode and a second metal terminal coupled to an anode of the second Schottky diode.
The circuit of claim 14, wherein the control circuit is in a second substrate distinct from the first substrate.
The circuit of claim 14, wherein the second connec-tion terminal is coupled between the anode of the second Schottky diode and the second capacitor. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
monolithic GaN power transistor component with dual Schottky diode gate protection and passivation trench structure
monolithic GaN field-effect power transistor with dual Schottky diodes (trench gate and trench diode electrode)
monolithic GaN transistor with dual Schottky diodes and full gate-drive control circuit
Materials described outside the worked examples.
gallium nitride
GaN
aluminum-gallium nitride
AlGaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is an electric diagram of an example of a circuit comprising a monolithic component integrating a gallium 5 nitride field-effect power transistor;
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Voltage | 2–15 V | — |
Voltage |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 52
Related documents with shared materials, methods, properties, or citations.
GaN HEMT field-effect power transistor (described embodiment)
silicon
Si
silicon carbide
SiC
sapphire
FIG. 2 is an electric diagram of an example of a circuit comprising an embodiment of a monolithic component integrating a gallium nitride field-effect power …
FIG. 3 illustrates a step of a method of manufacturing a 10 monolithic component integrating a gallium nitride field- effect power transistor according to an …
| — |
Thickness | 0.2–2 mm | — |
Thickness | 0.5–1.5 mm | — |
Voltage | ≤ 2 V | — |
Voltage | ≤ 10 V | — |
Voltage | ≤ 5 V | — |
Voltage | ≥ 1 V | — |
Voltage | ≥ 500 V | — |
Cited non-patent literature · 2
SELF-ALIGNED SIDEWALL GATE GAN HEMT
GaN HEMT field-effect power transistor (described embodiment)
silicon
Si
silicon carbide
SiC
sapphire
FIG. 2 is an electric diagram of an example of a circuit comprising an embodiment of a monolithic component integrating a gallium nitride field-effect power …
FIG. 3 illustrates a step of a method of manufacturing a 10 monolithic component integrating a gallium nitride field- effect power transistor according to an …
| — |
Thickness | 0.2–2 mm | — |
Thickness | 0.5–1.5 mm | — |
Voltage | ≤ 2 V | — |
Voltage | ≤ 10 V | — |
Voltage | ≤ 5 V | — |
Voltage | ≥ 1 V | — |
Voltage | ≥ 500 V | — |
Cited non-patent literature · 2
SELF-ALIGNED SIDEWALL GATE GAN HEMT
GaN HEMT field-effect power transistor (described embodiment)
silicon
Si
silicon carbide
SiC
sapphire
FIG. 2 is an electric diagram of an example of a circuit comprising an embodiment of a monolithic component integrating a gallium nitride field-effect power …
FIG. 3 illustrates a step of a method of manufacturing a 10 monolithic component integrating a gallium nitride field- effect power transistor according to an …
| — |
Thickness | 0.2–2 mm | — |
Thickness | 0.5–1.5 mm | — |
Voltage | ≤ 2 V | — |
Voltage | ≤ 10 V | — |
Voltage | ≤ 5 V | — |
Voltage | ≥ 1 V | — |
Voltage | ≥ 500 V | — |
Cited non-patent literature · 2
SELF-ALIGNED SIDEWALL GATE GAN HEMT
GaN HEMT field-effect power transistor (described embodiment)
silicon
Si
silicon carbide
SiC
sapphire
FIG. 2 is an electric diagram of an example of a circuit comprising an embodiment of a monolithic component integrating a gallium nitride field-effect power …
FIG. 3 illustrates a step of a method of manufacturing a 10 monolithic component integrating a gallium nitride field- effect power transistor according to an …
| — |
Thickness | 0.2–2 mm | — |
Thickness | 0.5–1.5 mm | — |
Voltage | ≤ 2 V | — |
Voltage | ≤ 10 V | — |
Voltage | ≤ 5 V | — |
Voltage | ≥ 1 V | — |
Voltage | ≥ 500 V | — |
Cited non-patent literature · 2
