Patent
US 8,471,294GaN-BASED NITRIC OXIDE SENSORS AND METHODS OF MAKING AND USING THE SAME
Michael A. Garcia
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,471,294Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a schematic of an exemplary illustrative non- limiting functionalized GaN-AIGaN HFET;
Figure 2 is an exemplary non-limiting illustration of charge distribution for GaN-based HFET in solution;
Figure 3 is a conceptual illustration of an exemplary illustrative non-limiting gateless FET design; and
Figure 4 is an exemplary illustrative non-limiting gateless FET design.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Eickhoff, M., J. Schalwig, G. Steinhoff, O. Weidemann, L. Gorgens, R. Neuberger, M. Hermann, B. Baur, G. Muller, O. Ambacher, and M. Stutzmann, Electronics and sensors based on pyroelectric AIGaN/GaN heterostructures; Part B: Sensor applications. Phys. Stat. Sol. (c), 2003. 0(6): p. 1908.
Skromme, B.J., C.J. Sandroff, E. Yablonovitch, and T. Gmitter, Effects of passivating ionic films on the photoluminescence properties of GaAs. App l e. Phys. Lett., 1987. 51(24): p. 2022.
Gomez, R., N. Noguera, A. Ivorra, R. Villa, and J. Millan, Instrumentation system for in vivo organ studies. I EE E CNF, 2001. 1: p. 264.
Haga, Y. and M. Esashi, Biomedical microsystems for minimally invasive diagnosis and treatment. Proc. of I EEE, 2004. 92: p. 98.
Gaston, B., Nitric oxide and thiol groups. Biochim. Biophys. Acta., 1999. 1411: p. 323.
Culotta, E. and D.E. Koshland, NO News is Good News. Science, 1992. 258(5090): p. 1862.
Pearton, S.J., B.S. Kang, S. Kim, and F. Ren, GaN-based diodes and transistors for chemical, gas, biological and pressure sensing. J. Phys.: Condens. Matter, 2004. 16: p. R961.
Steinhoff, G., M. Hermann, W.J. Schaff, L.F. Eastman, M. Stutzmann, and M. Eickhoff, pH response of GaN surfaces and its application for pH-sensitive field-effect transistors. App l e. Phys. Lett., 2003. 83(1): p. 177.
Stutzmann, M., G. Steinhoff, and M. Eickhoff, GaN-based heterostructures for sensor applications. Dia. Related Mat., 2002. 11: p. 886.
Gartsman, K., D. Cahen, A. Kadyshevitch, J. Libman, T. Moav, R. Naaman, A. Shanzer, V. Umansky, and A. Vilan, Molecular control of a GaAs transistor. Chem. Phys. Let., 1998. 283(5): p. 301.
Kirchner, C., M. George, B. Stein, W.J. Parak, H.E. Gaub, and M. Seitz, Corrosion protection and long-term chemical functionalization of gallium arsenide in an aqueous environment. Adv. Funct. Mater., 2002. 12(4): p. 266.
Wu, D.G., D. Cahen, P. Graf, R. Naaman, A. Nitzan, and D. Shvarts, Direct Detection of Low-Concentration NO in Physiological Solutions by a New GaAs-Based Sensor. Chem. Eur. J., 2001. 7(8): p. 1743.
Rovira, C., K. Kunc, J. Hutter, P. Ballone, and M. Parrinello, Equilibrium Geometries and Electronic Structure of Iron-Porphyrin 1 Each of the publications cited below is expressly incorporated in its entirety herein. Complexes: A Density Functional Study. J. Phys. Chem. A, 1997. 101: p. 8914.
Bayer, M., C. Uh l, and P. Vogl, Theoretical study of electrolyte gate AI GaN/GaN field effect transistors. App l e. Phys. Lett., 2005. 97: p. 033703.
Kadish, K.M., K.M. Smith, and R. Guilard, eds. Applications: Past, Present and Future. The Porphyrin Handbook. Vol. 6. 1999, Academic Press: San Diego. 240-250.
Ashkenasy, G., D. Cahen, R. Cohen, A. Shanzer, and A. Vilan, Molecular Engineering of Semiconductor Surfaces and Devices. Acc. Chem. Res., 2002. 35: p. 121. Claims What is claimed is:
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based heterojunction field effect transistor (HFET) NO sensor
Materials described outside the worked examples.
GaN
AlGaN
SiC
Measurements and analyses referenced in the patent, with their drawing references.
Figure 3 is a conceptual illustration of an exemplary illustrative non-limiting gateless FET design; and
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,471,294Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a schematic of an exemplary illustrative non- limiting functionalized GaN-AIGaN HFET;
Figure 2 is an exemplary non-limiting illustration of charge distribution for GaN-based HFET in solution;
Figure 3 is a conceptual illustration of an exemplary illustrative non-limiting gateless FET design; and
Figure 4 is an exemplary illustrative non-limiting gateless FET design.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Eickhoff, M., J. Schalwig, G. Steinhoff, O. Weidemann, L. Gorgens, R. Neuberger, M. Hermann, B. Baur, G. Muller, O. Ambacher, and M. Stutzmann, Electronics and sensors based on pyroelectric AIGaN/GaN heterostructures; Part B: Sensor applications. Phys. Stat. Sol. (c), 2003. 0(6): p. 1908.
Skromme, B.J., C.J. Sandroff, E. Yablonovitch, and T. Gmitter, Effects of passivating ionic films on the photoluminescence properties of GaAs. App l e. Phys. Lett., 1987. 51(24): p. 2022.
Gomez, R., N. Noguera, A. Ivorra, R. Villa, and J. Millan, Instrumentation system for in vivo organ studies. I EE E CNF, 2001. 1: p. 264.
Haga, Y. and M. Esashi, Biomedical microsystems for minimally invasive diagnosis and treatment. Proc. of I EEE, 2004. 92: p. 98.
Gaston, B., Nitric oxide and thiol groups. Biochim. Biophys. Acta., 1999. 1411: p. 323.
Culotta, E. and D.E. Koshland, NO News is Good News. Science, 1992. 258(5090): p. 1862.
Pearton, S.J., B.S. Kang, S. Kim, and F. Ren, GaN-based diodes and transistors for chemical, gas, biological and pressure sensing. J. Phys.: Condens. Matter, 2004. 16: p. R961.
Steinhoff, G., M. Hermann, W.J. Schaff, L.F. Eastman, M. Stutzmann, and M. Eickhoff, pH response of GaN surfaces and its application for pH-sensitive field-effect transistors. App l e. Phys. Lett., 2003. 83(1): p. 177.
Stutzmann, M., G. Steinhoff, and M. Eickhoff, GaN-based heterostructures for sensor applications. Dia. Related Mat., 2002. 11: p. 886.
Gartsman, K., D. Cahen, A. Kadyshevitch, J. Libman, T. Moav, R. Naaman, A. Shanzer, V. Umansky, and A. Vilan, Molecular control of a GaAs transistor. Chem. Phys. Let., 1998. 283(5): p. 301.
Kirchner, C., M. George, B. Stein, W.J. Parak, H.E. Gaub, and M. Seitz, Corrosion protection and long-term chemical functionalization of gallium arsenide in an aqueous environment. Adv. Funct. Mater., 2002. 12(4): p. 266.
Wu, D.G., D. Cahen, P. Graf, R. Naaman, A. Nitzan, and D. Shvarts, Direct Detection of Low-Concentration NO in Physiological Solutions by a New GaAs-Based Sensor. Chem. Eur. J., 2001. 7(8): p. 1743.
Rovira, C., K. Kunc, J. Hutter, P. Ballone, and M. Parrinello, Equilibrium Geometries and Electronic Structure of Iron-Porphyrin 1 Each of the publications cited below is expressly incorporated in its entirety herein. Complexes: A Density Functional Study. J. Phys. Chem. A, 1997. 101: p. 8914.
Bayer, M., C. Uh l, and P. Vogl, Theoretical study of electrolyte gate AI GaN/GaN field effect transistors. App l e. Phys. Lett., 2005. 97: p. 033703.
Kadish, K.M., K.M. Smith, and R. Guilard, eds. Applications: Past, Present and Future. The Porphyrin Handbook. Vol. 6. 1999, Academic Press: San Diego. 240-250.
Ashkenasy, G., D. Cahen, R. Cohen, A. Shanzer, and A. Vilan, Molecular Engineering of Semiconductor Surfaces and Devices. Acc. Chem. Res., 2002. 35: p. 121. Claims What is claimed is:
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based heterojunction field effect transistor (HFET) NO sensor
Materials described outside the worked examples.
GaN
AlGaN
SiC
Measurements and analyses referenced in the patent, with their drawing references.
Figure 3 is a conceptual illustration of an exemplary illustrative non-limiting gateless FET design; and
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,471,294Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a schematic of an exemplary illustrative non- limiting functionalized GaN-AIGaN HFET;
Figure 2 is an exemplary non-limiting illustration of charge distribution for GaN-based HFET in solution;
Figure 3 is a conceptual illustration of an exemplary illustrative non-limiting gateless FET design; and
Figure 4 is an exemplary illustrative non-limiting gateless FET design.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Eickhoff, M., J. Schalwig, G. Steinhoff, O. Weidemann, L. Gorgens, R. Neuberger, M. Hermann, B. Baur, G. Muller, O. Ambacher, and M. Stutzmann, Electronics and sensors based on pyroelectric AIGaN/GaN heterostructures; Part B: Sensor applications. Phys. Stat. Sol. (c), 2003. 0(6): p. 1908.
Skromme, B.J., C.J. Sandroff, E. Yablonovitch, and T. Gmitter, Effects of passivating ionic films on the photoluminescence properties of GaAs. App l e. Phys. Lett., 1987. 51(24): p. 2022.
Gomez, R., N. Noguera, A. Ivorra, R. Villa, and J. Millan, Instrumentation system for in vivo organ studies. I EE E CNF, 2001. 1: p. 264.
Haga, Y. and M. Esashi, Biomedical microsystems for minimally invasive diagnosis and treatment. Proc. of I EEE, 2004. 92: p. 98.
Gaston, B., Nitric oxide and thiol groups. Biochim. Biophys. Acta., 1999. 1411: p. 323.
Culotta, E. and D.E. Koshland, NO News is Good News. Science, 1992. 258(5090): p. 1862.
Pearton, S.J., B.S. Kang, S. Kim, and F. Ren, GaN-based diodes and transistors for chemical, gas, biological and pressure sensing. J. Phys.: Condens. Matter, 2004. 16: p. R961.
Steinhoff, G., M. Hermann, W.J. Schaff, L.F. Eastman, M. Stutzmann, and M. Eickhoff, pH response of GaN surfaces and its application for pH-sensitive field-effect transistors. App l e. Phys. Lett., 2003. 83(1): p. 177.
Stutzmann, M., G. Steinhoff, and M. Eickhoff, GaN-based heterostructures for sensor applications. Dia. Related Mat., 2002. 11: p. 886.
Gartsman, K., D. Cahen, A. Kadyshevitch, J. Libman, T. Moav, R. Naaman, A. Shanzer, V. Umansky, and A. Vilan, Molecular control of a GaAs transistor. Chem. Phys. Let., 1998. 283(5): p. 301.
Kirchner, C., M. George, B. Stein, W.J. Parak, H.E. Gaub, and M. Seitz, Corrosion protection and long-term chemical functionalization of gallium arsenide in an aqueous environment. Adv. Funct. Mater., 2002. 12(4): p. 266.
Wu, D.G., D. Cahen, P. Graf, R. Naaman, A. Nitzan, and D. Shvarts, Direct Detection of Low-Concentration NO in Physiological Solutions by a New GaAs-Based Sensor. Chem. Eur. J., 2001. 7(8): p. 1743.
Rovira, C., K. Kunc, J. Hutter, P. Ballone, and M. Parrinello, Equilibrium Geometries and Electronic Structure of Iron-Porphyrin 1 Each of the publications cited below is expressly incorporated in its entirety herein. Complexes: A Density Functional Study. J. Phys. Chem. A, 1997. 101: p. 8914.
Bayer, M., C. Uh l, and P. Vogl, Theoretical study of electrolyte gate AI GaN/GaN field effect transistors. App l e. Phys. Lett., 2005. 97: p. 033703.
Kadish, K.M., K.M. Smith, and R. Guilard, eds. Applications: Past, Present and Future. The Porphyrin Handbook. Vol. 6. 1999, Academic Press: San Diego. 240-250.
Ashkenasy, G., D. Cahen, R. Cohen, A. Shanzer, and A. Vilan, Molecular Engineering of Semiconductor Surfaces and Devices. Acc. Chem. Res., 2002. 35: p. 121. Claims What is claimed is:
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based heterojunction field effect transistor (HFET) NO sensor
Materials described outside the worked examples.
GaN
AlGaN
SiC
Measurements and analyses referenced in the patent, with their drawing references.
Figure 3 is a conceptual illustration of an exemplary illustrative non-limiting gateless FET design; and
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,471,294Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 is a schematic of an exemplary illustrative non- limiting functionalized GaN-AIGaN HFET;
Figure 2 is an exemplary non-limiting illustration of charge distribution for GaN-based HFET in solution;
Figure 3 is a conceptual illustration of an exemplary illustrative non-limiting gateless FET design; and
Figure 4 is an exemplary illustrative non-limiting gateless FET design.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Eickhoff, M., J. Schalwig, G. Steinhoff, O. Weidemann, L. Gorgens, R. Neuberger, M. Hermann, B. Baur, G. Muller, O. Ambacher, and M. Stutzmann, Electronics and sensors based on pyroelectric AIGaN/GaN heterostructures; Part B: Sensor applications. Phys. Stat. Sol. (c), 2003. 0(6): p. 1908.
Skromme, B.J., C.J. Sandroff, E. Yablonovitch, and T. Gmitter, Effects of passivating ionic films on the photoluminescence properties of GaAs. App l e. Phys. Lett., 1987. 51(24): p. 2022.
Gomez, R., N. Noguera, A. Ivorra, R. Villa, and J. Millan, Instrumentation system for in vivo organ studies. I EE E CNF, 2001. 1: p. 264.
Haga, Y. and M. Esashi, Biomedical microsystems for minimally invasive diagnosis and treatment. Proc. of I EEE, 2004. 92: p. 98.
Gaston, B., Nitric oxide and thiol groups. Biochim. Biophys. Acta., 1999. 1411: p. 323.
Culotta, E. and D.E. Koshland, NO News is Good News. Science, 1992. 258(5090): p. 1862.
Pearton, S.J., B.S. Kang, S. Kim, and F. Ren, GaN-based diodes and transistors for chemical, gas, biological and pressure sensing. J. Phys.: Condens. Matter, 2004. 16: p. R961.
Steinhoff, G., M. Hermann, W.J. Schaff, L.F. Eastman, M. Stutzmann, and M. Eickhoff, pH response of GaN surfaces and its application for pH-sensitive field-effect transistors. App l e. Phys. Lett., 2003. 83(1): p. 177.
Stutzmann, M., G. Steinhoff, and M. Eickhoff, GaN-based heterostructures for sensor applications. Dia. Related Mat., 2002. 11: p. 886.
Gartsman, K., D. Cahen, A. Kadyshevitch, J. Libman, T. Moav, R. Naaman, A. Shanzer, V. Umansky, and A. Vilan, Molecular control of a GaAs transistor. Chem. Phys. Let., 1998. 283(5): p. 301.
Kirchner, C., M. George, B. Stein, W.J. Parak, H.E. Gaub, and M. Seitz, Corrosion protection and long-term chemical functionalization of gallium arsenide in an aqueous environment. Adv. Funct. Mater., 2002. 12(4): p. 266.
Wu, D.G., D. Cahen, P. Graf, R. Naaman, A. Nitzan, and D. Shvarts, Direct Detection of Low-Concentration NO in Physiological Solutions by a New GaAs-Based Sensor. Chem. Eur. J., 2001. 7(8): p. 1743.
Rovira, C., K. Kunc, J. Hutter, P. Ballone, and M. Parrinello, Equilibrium Geometries and Electronic Structure of Iron-Porphyrin 1 Each of the publications cited below is expressly incorporated in its entirety herein. Complexes: A Density Functional Study. J. Phys. Chem. A, 1997. 101: p. 8914.
Bayer, M., C. Uh l, and P. Vogl, Theoretical study of electrolyte gate AI GaN/GaN field effect transistors. App l e. Phys. Lett., 2005. 97: p. 033703.
Kadish, K.M., K.M. Smith, and R. Guilard, eds. Applications: Past, Present and Future. The Porphyrin Handbook. Vol. 6. 1999, Academic Press: San Diego. 240-250.
Ashkenasy, G., D. Cahen, R. Cohen, A. Shanzer, and A. Vilan, Molecular Engineering of Semiconductor Surfaces and Devices. Acc. Chem. Res., 2002. 35: p. 121. Claims What is claimed is:
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based heterojunction field effect transistor (HFET) NO sensor
Materials described outside the worked examples.
GaN
AlGaN
SiC
Measurements and analyses referenced in the patent, with their drawing references.
Figure 3 is a conceptual illustration of an exemplary illustrative non-limiting gateless FET design; and
Related documents with shared materials, methods, properties, or citations.
metalloporphyrin
hemin (iron-porphyrin)
Nafion
Figure 4 is an exemplary illustrative non-limiting gateless FET design.
metalloporphyrin
hemin (iron-porphyrin)
Nafion
Figure 4 is an exemplary illustrative non-limiting gateless FET design.
metalloporphyrin
hemin (iron-porphyrin)
Nafion
Figure 4 is an exemplary illustrative non-limiting gateless FET design.
metalloporphyrin
hemin (iron-porphyrin)
Nafion
Figure 4 is an exemplary illustrative non-limiting gateless FET design.