Protection circuit against short circuits of switching device for SiC or GaN MOSFET transistor and associated method | Matter42 Literature
Patent
Atlas literature
Patent
US 10,951,205
Protection circuit against short circuits of switching device for SiC or GaN MOSFET transistor and associated method
Fisal AL KAYAL
US
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1 independent · 9 dependent
1
IndependentSiC MOSFETGaN MOSFETpower switching device with SiC or GaN MOSFET transistor and short-circuit protection
. [[-]] A power switching device comprising at least one transistor of the S i C or GaN MOSFET type traveled by a main current; wherein the switching device comprises at least one measuring module configured to indirectly measure the main current of the transistor from an electromagnetic field produced by the transistor and at least one protection circuit configured to detect a short- circuit based on a sign of a temporal drift of the main current. Currently amended
2
Dependent← claim 1power switching device with SiC or GaN MOSFET transistor and short-circuit protection
.[[-]] The switching device according to claim 1, wherein the measuring module comprises an antenna galvanically isolated from the transistor. Currently amended
4
Dependent← claim 1power switching device with SiC or GaN MOSFET transistor and short-circuit protection
.[[-]] The switching device according to claim 1, wherein the switching device comprises multiple transistors. Currently amended
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
power switching device with SiC or GaN MOSFET transistor and short-circuit protection
GaN MOSFETtransistor alternative
SiC MOSFETtransistor
Materials
Materials described outside the worked examples.
SiC MOSFET
Claimed Transistor Material
GaN MOSFET
Claimed Transistor Material
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
Thickness
1000000–100000000 nm
—
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Protection circuit against short circuits of switching device for SiC or GaN MOSFET transistor and associated method
Fisal AL KAYAL
US
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1 independent · 9 dependent
1
IndependentSiC MOSFETGaN MOSFETpower switching device with SiC or GaN MOSFET transistor and short-circuit protection
. [[-]] A power switching device comprising at least one transistor of the S i C or GaN MOSFET type traveled by a main current; wherein the switching device comprises at least one measuring module configured to indirectly measure the main current of the transistor from an electromagnetic field produced by the transistor and at least one protection circuit configured to detect a short- circuit based on a sign of a temporal drift of the main current. Currently amended
2
Dependent← claim 1power switching device with SiC or GaN MOSFET transistor and short-circuit protection
.[[-]] The switching device according to claim 1, wherein the measuring module comprises an antenna galvanically isolated from the transistor. Currently amended
4
Dependent← claim 1power switching device with SiC or GaN MOSFET transistor and short-circuit protection
.[[-]] The switching device according to claim 1, wherein the switching device comprises multiple transistors. Currently amended
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
power switching device with SiC or GaN MOSFET transistor and short-circuit protection
GaN MOSFETtransistor alternative
SiC MOSFETtransistor
Materials
Materials described outside the worked examples.
SiC MOSFET
Claimed Transistor Material
GaN MOSFET
Claimed Transistor Material
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
Thickness
1000000–100000000 nm
—
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Protection circuit against short circuits of switching device for SiC or GaN MOSFET transistor and associated method
Fisal AL KAYAL
US
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1 independent · 9 dependent
1
IndependentSiC MOSFETGaN MOSFETpower switching device with SiC or GaN MOSFET transistor and short-circuit protection
. [[-]] A power switching device comprising at least one transistor of the S i C or GaN MOSFET type traveled by a main current; wherein the switching device comprises at least one measuring module configured to indirectly measure the main current of the transistor from an electromagnetic field produced by the transistor and at least one protection circuit configured to detect a short- circuit based on a sign of a temporal drift of the main current. Currently amended
2
Dependent← claim 1power switching device with SiC or GaN MOSFET transistor and short-circuit protection
.[[-]] The switching device according to claim 1, wherein the measuring module comprises an antenna galvanically isolated from the transistor. Currently amended
4
Dependent← claim 1power switching device with SiC or GaN MOSFET transistor and short-circuit protection
.[[-]] The switching device according to claim 1, wherein the switching device comprises multiple transistors. Currently amended
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
power switching device with SiC or GaN MOSFET transistor and short-circuit protection
GaN MOSFETtransistor alternative
SiC MOSFETtransistor
Materials
Materials described outside the worked examples.
SiC MOSFET
Claimed Transistor Material
GaN MOSFET
Claimed Transistor Material
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
Thickness
1000000–100000000 nm
—
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Protection circuit against short circuits of switching device for SiC or GaN MOSFET transistor and associated method
Fisal AL KAYAL
US
Claims
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1 independent · 9 dependent
1
IndependentSiC MOSFETGaN MOSFETpower switching device with SiC or GaN MOSFET transistor and short-circuit protection
. [[-]] A power switching device comprising at least one transistor of the S i C or GaN MOSFET type traveled by a main current; wherein the switching device comprises at least one measuring module configured to indirectly measure the main current of the transistor from an electromagnetic field produced by the transistor and at least one protection circuit configured to detect a short- circuit based on a sign of a temporal drift of the main current. Currently amended
2
Dependent← claim 1power switching device with SiC or GaN MOSFET transistor and short-circuit protection
.[[-]] The switching device according to claim 1, wherein the measuring module comprises an antenna galvanically isolated from the transistor. Currently amended
4
Dependent← claim 1power switching device with SiC or GaN MOSFET transistor and short-circuit protection
.[[-]] The switching device according to claim 1, wherein the switching device comprises multiple transistors. Currently amended
Device structures
Layer stacks claimed or described, ordered top of device to substrate.
power switching device with SiC or GaN MOSFET transistor and short-circuit protection
GaN MOSFETtransistor alternative
SiC MOSFETtransistor
Materials
Materials described outside the worked examples.
SiC MOSFET
Claimed Transistor Material
GaN MOSFET
Claimed Transistor Material
Reported properties
Performance values and ranges asserted in the specification or claims.
Property
Value
Material
Thickness
1000000–100000000 nm
—
Why these are connected
Related documents with shared materials, methods, properties, or citations.
