THREE-STAGE GaN HEMT DOHERTY POWER AMPLIFIER FOR HIGH FREQUENCY APPLICATIONS

Yoon Ha JEONG

Patent details

Patent

US 8,466,746

THREE-STAGE GaN HEMT DOHERTY POWER AMPLIFIER FOR HIGH FREQUENCY APPLICATIONS

Yoon Ha JEONG, Mun Woo LEE, Sang Ho KAM

2013-06-18·US

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

2 independent · 7 dependent

1
Independentthree-stage GaN HEMT Doherty power amplifier
A three-stage G aN HEMT Doherty power ampliﬁer for high frequency applications, comprising: 5 a carrier ampliﬁer; ﬁrst and second peaking ampliﬁer; a 10-dB power divider conﬁgured to divide an input signal to the carrier ampliﬁer and the ﬁrst and second peaking ampliﬁers; a ﬁrst path for controlling input power of the carrier 10 ampliﬁer; and a second path for maintaining an eﬃciency of 40 % or more in an output range of 40 dBm to 50 dBm.
1. 2
  Dependent← claim 1three-stage GaN HEMT Doherty power amplifier
  The three-stage G aN HEMT Doherty power ampliﬁer of 15 claim 1, wherein the ﬁrst path comprises a driving ampliﬁer conﬁgured to control the carrier ampliﬁer according to the magnitude of the input signal.
2. 3
  Dependent← claim 1three-stage GaN HEMT Doherty power amplifier
  The three-stage G aN HEMT Doherty power ampliﬁer of 20 claim 1, wherein the ﬁrst path comprises a gate bias controller conﬁgured to amplify a voltage of several hundreds m V.
3. 4
  Dependent← claim 1GaN HEMTthree-stage GaN HEMT Doherty power amplifier
  4. The three-stage G aN HEMT Doherty power ampliﬁer of claim 1, wherein the ﬁrst path comprises the carrier ampliﬁer, 25 and the carrier ampliﬁer comprises a G aN HEMT.
4. 6
  Dependent← claim 1three-stage GaN HEMT Doherty power amplifier
  The three-stage G aN HEMT Doherty power ampliﬁer of claim 1, wherein the second path comprises a hybrid 3-dB power divider conﬁgured to apply inputs having the same magnitude and a phase diﬀerence of 90 degrees to the ﬁrst and second peaking 5 ampliﬁers.
5. 7
  Dependent← claim 1GaN HEMTthree-stage GaN HEMT Doherty power amplifier
  The three-stage G aN HEMT Doherty power ampliﬁer of claim 1, wherein the second path comprises the ﬁrst peaking ampliﬁer, and the ﬁrst peaking ampliﬁer comprises a G aN HEMT.
6. 8
  Dependent← claim 1GaN HEMTthree-stage GaN HEMT Doherty power amplifier
  The three-stage G aN HEMT Doherty power ampliﬁer of claim 1, wherein the second path comprises the second peaking ampliﬁer, and the second peaking ampliﬁer comprises a G aN HEMT.
7. 9
  Dependent← claim 1three-stage GaN HEMT Doherty power amplifier
  15 9. The three-stage G aN HEMT Doherty power ampliﬁer of claim 1, further comprising an input matching circuit and an output matching circuit which are connected to inputs and outputs of the carrier ampliﬁer and the ﬁrst and second peaking ampliﬁers, respectively.
10
Independentthree-stage GaN HEMT Doherty power amplifier
10. The three-stage G aN HEMT Doherty power matching circuit is connected to an output k/4

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

three-stage GaN HEMT Doherty power amplifier

GaN HEMTsecond peaking amplifier

GaN HEMTfirst peaking amplifier

GaN HEMTcarrier amplifier

Materials

Materials described outside the worked examples.

GaN HEMT

Transistor Device Material

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
drain efficiency at back-off output power range	40	—

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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