WAFER LEVEL PACKAGED GAN POWER SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD THEREOF

Chull Won JU

Patent details

Patent

US 9,012,920

WAFER LEVEL PACKAGED GAN POWER SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD THEREOF

Chull Won JU

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

7 independent · 13 dependent

1
IndependentGaNGaN compound power semiconductor device (flip-chip packaged HEMT)
(Cu rr ently Amended) A power semiconductor device, comprising: a gallium nitride compound element; a contact pad including [[a]] sources, a drain, and a gate connecting with the gallium nitride compound element; a module substrate to which the gallium nitride compound element is ﬂip-chip bonded; a bonding pad formed on the module substrate; a bump formed on the bonding pad of the module substrate so that the contact pad and the bonding pad are ﬂip-chip bonded; and [[a]] thermal vias disposed in the module substrate, the thermal vias being formed so as to at least partially extend across each of the sources and the drain to emit heat from the gallium nitride compound element, the thermal vias being disposed relative to each other so as to form a zig-zag, and a size of each of the thermal vias is equal to or smaller than a length calculated by a formula a + b + c, wherein a in the formula is a source horizontal length of one of the sources, b in the formula is a drain horizontal length of the drain, and c in the formula is a source horizontal length of another of the sources.
1. 2
  Dependent← claim 1GaN compound power semiconductor device (flip-chip packaged HEMT)
  The power semiconductor device of claim 1, wherein the bonding pad is disposed so as to have a vertical symmetrical structure or a horizontal symmetrical structure to the contact pad.
2. 3
  Dependent← claim 1GaN compound power semiconductor device (flip-chip packaged HEMT)
  (Cu rr ently Amended) The power semiconductor device of claim 1, wherein each of AMENDMENT 13/867,328 -2- Atty. Ref.: HANB-137(KBK) the sourcesis further formed with a sub source contact pad s and the drain is further formed with a sub drain contact pad.
3. 5
  Dependent← claim 1GaN compound power semiconductor device (flip-chip packaged HEMT)
  The power semiconductor device of claim 1, wherein the bump is melted at a temperature lower than a process temperature of the gallium nitride compound element.
4. 18
  Dependent← claim 1GaN compound power semiconductor device (flip-chip packaged HEMT)
  The power semiconductor device of claim 1, wherein [[the]] one of thermal vias is the only thermal via that partially extends across each of the one of the sources and the drain.
6
Independent
canceled
7
IndependentGaN compound power semiconductor device (flip-chip packaged HEMT)
(Cu rr ently Amended) The power semiconductor device of claim [[6]] 1, wherein the module substrate has a metal formed on a back side thereof, the module substrate emitting heat through the thermal vias to a housing.
8
IndependentGaNGaN compound power semiconductor device (flip-chip packaged HEMT)
(Cu rr ently Amended) A manufacturing method of a gallium nitride compound power semiconductor device, comprising: forming a gallium nitride compound element; forming a contact pad including [[a]] sources, [[a]] drains, and a gate to be AMENDMENT 13/867,328 -3-Atty. Re f.: HANB-137(KBK) connected with the gallium nitride compound element; forming a bonding pad on a module substrate at a position co rr esponding to the contact pad; forming a bump on the bonding pad and ﬂip-chip bonding the contact pad and the bonding pad by the formed bump; and forming [[a]] thermal vias in the module substrate, the thermal vias being formed so as to at least partially extend across each of the sourcesand the drains to emit heat from the gallium nitride compound element, a single ﬁrst of the thermal vias being formed so as to at least partially extend across each of two of the sources and one of the drains to emit heat from the gallium nitride compound element, and a single second of the thermal vias being formed so as to at least partially extend across each of another of the sources and two others of the drains to emit heat from the gallium nitride compound element.
1. 9
  Dependent← claim 8
  The manufacturing method of claim 8, wherein in the forming of the bonding pad, the bonding pad is disposed so as to have a vertical symmetrical structure or a horizontal symmetrical structure to the contact pad.
2. 10
  Dependent← claim 8
  (Cu rr ently Amended) The manufacturing method of claim 8, wherein in the forming of the contact pad, after the sources, the drains, and the gate are formed, [[a]] sub source contact pads are [[is]] formed in the sources and [[a]] sub drain contact pads [[is]] are formed in the drains.
3. 12
  Dependent← claim 8
  The manufacturing method of claim 8, wherein in the ﬂip-chip bonding, the bump is melted at a temperature lower than a process temperature of the gallium nitride compound element.
15
Independent
canceled
17
Independent
canceled
20
IndependentGaNGaN compound power semiconductor device (flip-chip packaged HEMT)
A power semiconductor device, comprising: a gallium nitride compound element; a contact pad including sources, drains, and a gate connecting with the gallium nitride compound element; a module substrate to which the gallium nitride compound element is ﬂip-chip bonded; a bonding pad formed on the module substrate; a bump formed on the bonding pad of the module substrate so that the contact AMENDMENT 13/867,328 -6- Atty. Ref.: HANB-137(KBK) pad and the bonding pad are ﬂip-chip bonded; and thermal vias on the module substrate, the thermal vias being formed so as to at least partially extend across the sources and the drains, a single ﬁrst of the thermal vias being formed so as to at least and one of the drains to emit heat from the gallium second of the thermal vias being formed so as to the sources and two others of the drains to emit AMENDMENT 13/867,328 -7-partially extend across each of two of the sources nitride compound element, and a single at least partially extend across each of another of heat from the gallium nitride compound element.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN compound power semiconductor device (flip-chip packaged HEMT)

module_substrate_with_thermal_viasmodule substrate with thermal vias

bonding_padbonding pad

bumpbump

contact_pad_sources_drain_gatecontact pad sources drain gate

GaNactive element

Materials

Materials described outside the worked examples.

gallium nitride compound

GaN

Semiconductor Element

AlGaN/GaN

HEMT Active Layer

Process steps

Additional fabrication and treatment steps described in the patent.

Flip Chip Bonding

Step 1

Process details

bump formation:wafer level

bump melt temperature:lower than process temperature of gallium nitride compound element

Materials:GaN

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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