Patent
US 8,421,119GAN RELATED COMPOUND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME AND DEVICE HAVING THE SAME
Yukio Shakuda
US
Copyright © 2026 Matter42. All rights reserved.
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Atlas literature
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US 8,421,119Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a cross-sectional structure of a GaN related compound semiconductor element of the present invention.
FIG. 2 shows the GaN related compound semiconductor element of
FIG. 3 is a production step of a process for producing the GaN related compound semiconductor element of the present invention.
FIG. 4 is a production step of the process for producing the GaN related compound semiconductor element of the present invention.
FIG. 5 is a production step of the process for producing the GaN related compound semiconductor element of the present invention.
FIG. 6 is a production step of the process for producing the GaN related compound semiconductor element of the present invention.
FIG. 7 is a production step of the process for producing the GaN related compound semiconductor element of the present invention.
FIG. 8 is a production step of the process for producing the GaN related compound semiconductor element of the present invention.
FIG. 9D show examples of patterns of a selective-growth mask.
FIG. 10 shows another shape of the GaN related compound semiconductor element of
FIG. 11 shows another shape of the GaN related compound semiconductor element of
FIG. 12 shows a wurtzite single crystal structure.
FIG. 13 shows an example of a gate electrode having a curved shape in each of bent portions thereof.
FIG. 14 shows another example of a gate electrode having a curved shape in each of bent portions thereof.
FIG. 15 shows a lamination structure of a GaN related multilayer channel layer.
FIG. 16 shows another lamination structure of a. GaN related multilayer channel layer.
FIG. 17 shows a cross-sectional structure of a conventional GaN related compound semiconductor element.
FIG. 18 shows a cross-sectional structure of another 11 J-37 conventional GaN related compound semiconductor element.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN related compound semiconductor element comprising: a channel layer made of a GaN related compound semiconductor; a source layer including two adjacent ridge portions formed therein by selective growth; a drain layer; and a source electrode, wherein the channel layer is sandwiched by the source layer and the drain layer, and a selective-growth mask is left on the channel layer surface located outside of the two adjacent ridge portions and removed from a portion of the channel layer located between the two adjacent ridge portions after being used for the selective growth; and a gate electrode is provided on the selective-growth mask; wherein the source electrode is formed on top and adjacent to side surfaces of the two adjacent ridge portions and above a portion of the channel layer located between the ridges; and the part of the selective-growth mask and the source layer are formed on the same plane of the channel layerand the gate electrode is formed in a manner that the direction of the shorter dimension of the gate electrode is aligned with a normal direction to the m crystal plane of the channel layer.
A GaN related compound semiconductor device comprising the GaN related compound semiconductor element according to claim 1.
. The GaN related compound semiconductor element of claim 1, wherein the channel layer has a multilayer structure including an undoped GaN related layer in a middle portion thereof.
The GaN related compound semiconductor element of claim 1, wherein a groove portion is formed to extend from the channel layer to the drain layer so that the drain layer is partially exposed to the outside; and a drain electrode is formed on the exposed part.
.
-10.
Layer stacks claimed or described, ordered top of device to substrate.
GaN related compound semiconductor element (transistor)
Materials described outside the worked examples.
GaN related compound semiconductor (channel layer)
GaN related compound semiconductor (source layer)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,421,119Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a cross-sectional structure of a GaN related compound semiconductor element of the present invention.
FIG. 2 shows the GaN related compound semiconductor element of
FIG. 3 is a production step of a process for producing the GaN related compound semiconductor element of the present invention.
FIG. 4 is a production step of the process for producing the GaN related compound semiconductor element of the present invention.
FIG. 5 is a production step of the process for producing the GaN related compound semiconductor element of the present invention.
FIG. 6 is a production step of the process for producing the GaN related compound semiconductor element of the present invention.
FIG. 7 is a production step of the process for producing the GaN related compound semiconductor element of the present invention.
FIG. 8 is a production step of the process for producing the GaN related compound semiconductor element of the present invention.
FIG. 9D show examples of patterns of a selective-growth mask.
FIG. 10 shows another shape of the GaN related compound semiconductor element of
FIG. 11 shows another shape of the GaN related compound semiconductor element of
FIG. 12 shows a wurtzite single crystal structure.
FIG. 13 shows an example of a gate electrode having a curved shape in each of bent portions thereof.
FIG. 14 shows another example of a gate electrode having a curved shape in each of bent portions thereof.
FIG. 15 shows a lamination structure of a GaN related multilayer channel layer.
FIG. 16 shows another lamination structure of a. GaN related multilayer channel layer.
FIG. 17 shows a cross-sectional structure of a conventional GaN related compound semiconductor element.
FIG. 18 shows a cross-sectional structure of another 11 J-37 conventional GaN related compound semiconductor element.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN related compound semiconductor element comprising: a channel layer made of a GaN related compound semiconductor; a source layer including two adjacent ridge portions formed therein by selective growth; a drain layer; and a source electrode, wherein the channel layer is sandwiched by the source layer and the drain layer, and a selective-growth mask is left on the channel layer surface located outside of the two adjacent ridge portions and removed from a portion of the channel layer located between the two adjacent ridge portions after being used for the selective growth; and a gate electrode is provided on the selective-growth mask; wherein the source electrode is formed on top and adjacent to side surfaces of the two adjacent ridge portions and above a portion of the channel layer located between the ridges; and the part of the selective-growth mask and the source layer are formed on the same plane of the channel layerand the gate electrode is formed in a manner that the direction of the shorter dimension of the gate electrode is aligned with a normal direction to the m crystal plane of the channel layer.
A GaN related compound semiconductor device comprising the GaN related compound semiconductor element according to claim 1.
. The GaN related compound semiconductor element of claim 1, wherein the channel layer has a multilayer structure including an undoped GaN related layer in a middle portion thereof.
The GaN related compound semiconductor element of claim 1, wherein a groove portion is formed to extend from the channel layer to the drain layer so that the drain layer is partially exposed to the outside; and a drain electrode is formed on the exposed part.
.
-10.
Layer stacks claimed or described, ordered top of device to substrate.
GaN related compound semiconductor element (transistor)
Materials described outside the worked examples.
GaN related compound semiconductor (channel layer)
GaN related compound semiconductor (source layer)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,421,119Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a cross-sectional structure of a GaN related compound semiconductor element of the present invention.
FIG. 2 shows the GaN related compound semiconductor element of
FIG. 3 is a production step of a process for producing the GaN related compound semiconductor element of the present invention.
FIG. 4 is a production step of the process for producing the GaN related compound semiconductor element of the present invention.
FIG. 5 is a production step of the process for producing the GaN related compound semiconductor element of the present invention.
FIG. 6 is a production step of the process for producing the GaN related compound semiconductor element of the present invention.
FIG. 7 is a production step of the process for producing the GaN related compound semiconductor element of the present invention.
FIG. 8 is a production step of the process for producing the GaN related compound semiconductor element of the present invention.
FIG. 9D show examples of patterns of a selective-growth mask.
FIG. 10 shows another shape of the GaN related compound semiconductor element of
FIG. 11 shows another shape of the GaN related compound semiconductor element of
FIG. 12 shows a wurtzite single crystal structure.
FIG. 13 shows an example of a gate electrode having a curved shape in each of bent portions thereof.
FIG. 14 shows another example of a gate electrode having a curved shape in each of bent portions thereof.
FIG. 15 shows a lamination structure of a GaN related multilayer channel layer.
FIG. 16 shows another lamination structure of a. GaN related multilayer channel layer.
FIG. 17 shows a cross-sectional structure of a conventional GaN related compound semiconductor element.
FIG. 18 shows a cross-sectional structure of another 11 J-37 conventional GaN related compound semiconductor element.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN related compound semiconductor element comprising: a channel layer made of a GaN related compound semiconductor; a source layer including two adjacent ridge portions formed therein by selective growth; a drain layer; and a source electrode, wherein the channel layer is sandwiched by the source layer and the drain layer, and a selective-growth mask is left on the channel layer surface located outside of the two adjacent ridge portions and removed from a portion of the channel layer located between the two adjacent ridge portions after being used for the selective growth; and a gate electrode is provided on the selective-growth mask; wherein the source electrode is formed on top and adjacent to side surfaces of the two adjacent ridge portions and above a portion of the channel layer located between the ridges; and the part of the selective-growth mask and the source layer are formed on the same plane of the channel layerand the gate electrode is formed in a manner that the direction of the shorter dimension of the gate electrode is aligned with a normal direction to the m crystal plane of the channel layer.
A GaN related compound semiconductor device comprising the GaN related compound semiconductor element according to claim 1.
. The GaN related compound semiconductor element of claim 1, wherein the channel layer has a multilayer structure including an undoped GaN related layer in a middle portion thereof.
The GaN related compound semiconductor element of claim 1, wherein a groove portion is formed to extend from the channel layer to the drain layer so that the drain layer is partially exposed to the outside; and a drain electrode is formed on the exposed part.
.
-10.
Layer stacks claimed or described, ordered top of device to substrate.
GaN related compound semiconductor element (transistor)
Materials described outside the worked examples.
GaN related compound semiconductor (channel layer)
GaN related compound semiconductor (source layer)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,421,119Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a cross-sectional structure of a GaN related compound semiconductor element of the present invention.
FIG. 2 shows the GaN related compound semiconductor element of
FIG. 3 is a production step of a process for producing the GaN related compound semiconductor element of the present invention.
FIG. 4 is a production step of the process for producing the GaN related compound semiconductor element of the present invention.
FIG. 5 is a production step of the process for producing the GaN related compound semiconductor element of the present invention.
FIG. 6 is a production step of the process for producing the GaN related compound semiconductor element of the present invention.
FIG. 7 is a production step of the process for producing the GaN related compound semiconductor element of the present invention.
FIG. 8 is a production step of the process for producing the GaN related compound semiconductor element of the present invention.
FIG. 9D show examples of patterns of a selective-growth mask.
FIG. 10 shows another shape of the GaN related compound semiconductor element of
FIG. 11 shows another shape of the GaN related compound semiconductor element of
FIG. 12 shows a wurtzite single crystal structure.
FIG. 13 shows an example of a gate electrode having a curved shape in each of bent portions thereof.
FIG. 14 shows another example of a gate electrode having a curved shape in each of bent portions thereof.
FIG. 15 shows a lamination structure of a GaN related multilayer channel layer.
FIG. 16 shows another lamination structure of a. GaN related multilayer channel layer.
FIG. 17 shows a cross-sectional structure of a conventional GaN related compound semiconductor element.
FIG. 18 shows a cross-sectional structure of another 11 J-37 conventional GaN related compound semiconductor element.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN related compound semiconductor element comprising: a channel layer made of a GaN related compound semiconductor; a source layer including two adjacent ridge portions formed therein by selective growth; a drain layer; and a source electrode, wherein the channel layer is sandwiched by the source layer and the drain layer, and a selective-growth mask is left on the channel layer surface located outside of the two adjacent ridge portions and removed from a portion of the channel layer located between the two adjacent ridge portions after being used for the selective growth; and a gate electrode is provided on the selective-growth mask; wherein the source electrode is formed on top and adjacent to side surfaces of the two adjacent ridge portions and above a portion of the channel layer located between the ridges; and the part of the selective-growth mask and the source layer are formed on the same plane of the channel layerand the gate electrode is formed in a manner that the direction of the shorter dimension of the gate electrode is aligned with a normal direction to the m crystal plane of the channel layer.
A GaN related compound semiconductor device comprising the GaN related compound semiconductor element according to claim 1.
. The GaN related compound semiconductor element of claim 1, wherein the channel layer has a multilayer structure including an undoped GaN related layer in a middle portion thereof.
The GaN related compound semiconductor element of claim 1, wherein a groove portion is formed to extend from the channel layer to the drain layer so that the drain layer is partially exposed to the outside; and a drain electrode is formed on the exposed part.
.
-10.
Layer stacks claimed or described, ordered top of device to substrate.
GaN related compound semiconductor element (transistor)
Materials described outside the worked examples.
GaN related compound semiconductor (channel layer)
GaN related compound semiconductor (source layer)
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
GaN related compound semiconductor (drain layer)
undoped GaN related layer
AlGaN layer doped with an impurity
AlGaN
p type GaN channel layer
GaN
selective-growth mask
High-Side Gate Driver for Gallium Nitride Integrated Circuits
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p type GaN channel layer
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undoped GaN related layer
AlGaN layer doped with an impurity
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p type GaN channel layer
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High-Side Gate Driver for Gallium Nitride Integrated Circuits
GaN related compound semiconductor (drain layer)
undoped GaN related layer
AlGaN layer doped with an impurity
AlGaN
p type GaN channel layer
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selective-growth mask