A transistor package comprising: a transistor; and one or more bandwidth limiting matching networks, each of the one or more bandwidth limiting matching networks coupled to one of an input node and an output node of the transistor and configured to limit a the gain response of the transistor outside of a predetermined frequency band, wherein the one or more bandwidth limiting matching networks comprises a first bandwidth limiting matching network that is coupled to either an input or an output of the transistor, the first bandwidth limiting matching network including a first inductor and a third inductor coupled in series between a radio frequency (RF) input of the first bandwidth limiting matching network and an RF output of the first bandwidth limiting matching network, and a second inductor and a first capacitor coupled in series between a first node that is between the first inductor and the third inductor and a reference voltage; a lead frame having an upper surface to which the transistor and the one or more bandwidth limiting matching networks are attached via a die attach material; and an overmold surrounding the upper surface and side surfaces of the lead frame, the transistor, and the one or more bandwidth limiting matching networks, wherein the over-mold has a glass transition temperature greater than 135'C, a flexural modulus less than about 20 GPa, a coefficient of thermal expansion below about 50 pp m/C and a moisture absorption rate less than about 0.5%.

5-8. canceled

The transistor package of claim [[8]] 1 wherein the predetermined frequency band is between about 2.5 GHz to about 2.7 GHz.

canceled

canceled

The transistor package of claim [[14]] I wherein the die attach material has a thermal resistance between about 40 W/m-K and 200 W/m-K and a flexural modulus less than about GPa.

canceled

An amplifier package comprising: two or more transistors; and one or more bandwidth limiting matching networks, each of the one or more bandwidth limiting matching networks coupled to one of an input node and an output node of one of the two or more transistors and configured to limit the a gain response of the transistor outside of a predetermined frequency band In re: Flowers et al. Application No.: 14/289,080 Filed: Page 4 a lead frame having an upper surface to which the two or more transistors and the one or more bandwidth limiting matching networks are attached via a die attach material; and an over-mold surrounding the upper surface and side surfaces of the lead frame, the two or more transistors, and the one or more bandwidth limiting matching networks, wherein the over-mold has a glass transition temperature greater than 1 35' C, a flexural modulus less than about 20 GPa, a coefficient of thermal expansion below about 50 ppm/C and a moisture absorption rate less than about 0.5%, wherein the die attach material is a sintered die attach material.

canceled

23-25. canceled

The amplifier package of claim [[25]] 17 wherein the predetermined frequency band is between about 2.5 GHz to about 2.7 GHz.

canceled

canceled

The transistor package of claim [[1 6]]1 wherein the die attach material is a sintered silver material.

The transistor amplifier package of claim [[16]] 17 wherein the two or more transistors have an area of less 2 mm x 2 mm and a flexural modulus of the die attach material is less than about 10 Gpa.

The transistor amplifier package of claim [[16]] 17 wherein the two or more transistors have an area of less 1 mm x 1 mm and a flexural modulus of the die attach material is less than about 10 2 Gpa.

A transistor package comprising: a transistor; and one or more bandwidth limiting matching networks, each of the one or more bandwidth limiting matching networks coupled to one of an input node and an output node of the transistor and configured to limit a the gain response of the transistor outside of a predetermined frequency band, wherein the one or more bandwidth limiting matching networks comprises a first bandwidth limiting matching network that is coupled to either an input or an output of the transistor, the first bandwidth limiting matching network including a first inductor and a third inductor coupled in series between a radio frequency (RF) input of the first bandwidth limiting matching network and an RF output of the first bandwidth limiting matching network, and a second inductor and a first capacitor coupled in series between a first node that is between the first inductor and the third inductor and a reference voltage; a lead frame having an upper surface to which the transistor and the one or more bandwidth limiting matching networks are attached via a die attach material; and an overmold surrounding the upper surface and side surfaces of the lead frame, the transistor, and the one or more bandwidth limiting matching networks, wherein the over-mold has a glass transition temperature greater than 135'C, a flexural modulus less than about 20 GPa, a coefficient of thermal expansion below about 50 pp m/C and a moisture absorption rate less than about 0.5%.

5-8. canceled

The transistor package of claim [[8]] 1 wherein the predetermined frequency band is between about 2.5 GHz to about 2.7 GHz.

canceled

canceled

The transistor package of claim [[14]] I wherein the die attach material has a thermal resistance between about 40 W/m-K and 200 W/m-K and a flexural modulus less than about GPa.

canceled

An amplifier package comprising: two or more transistors; and one or more bandwidth limiting matching networks, each of the one or more bandwidth limiting matching networks coupled to one of an input node and an output node of one of the two or more transistors and configured to limit the a gain response of the transistor outside of a predetermined frequency band In re: Flowers et al. Application No.: 14/289,080 Filed: Page 4 a lead frame having an upper surface to which the two or more transistors and the one or more bandwidth limiting matching networks are attached via a die attach material; and an over-mold surrounding the upper surface and side surfaces of the lead frame, the two or more transistors, and the one or more bandwidth limiting matching networks, wherein the over-mold has a glass transition temperature greater than 1 35' C, a flexural modulus less than about 20 GPa, a coefficient of thermal expansion below about 50 ppm/C and a moisture absorption rate less than about 0.5%, wherein the die attach material is a sintered die attach material.

canceled

23-25. canceled

The amplifier package of claim [[25]] 17 wherein the predetermined frequency band is between about 2.5 GHz to about 2.7 GHz.

canceled

canceled

The transistor package of claim [[1 6]]1 wherein the die attach material is a sintered silver material.

The transistor amplifier package of claim [[16]] 17 wherein the two or more transistors have an area of less 2 mm x 2 mm and a flexural modulus of the die attach material is less than about 10 Gpa.

The transistor amplifier package of claim [[16]] 17 wherein the two or more transistors have an area of less 1 mm x 1 mm and a flexural modulus of the die attach material is less than about 10 2 Gpa.

A transistor package comprising: a transistor; and one or more bandwidth limiting matching networks, each of the one or more bandwidth limiting matching networks coupled to one of an input node and an output node of the transistor and configured to limit a the gain response of the transistor outside of a predetermined frequency band, wherein the one or more bandwidth limiting matching networks comprises a first bandwidth limiting matching network that is coupled to either an input or an output of the transistor, the first bandwidth limiting matching network including a first inductor and a third inductor coupled in series between a radio frequency (RF) input of the first bandwidth limiting matching network and an RF output of the first bandwidth limiting matching network, and a second inductor and a first capacitor coupled in series between a first node that is between the first inductor and the third inductor and a reference voltage; a lead frame having an upper surface to which the transistor and the one or more bandwidth limiting matching networks are attached via a die attach material; and an overmold surrounding the upper surface and side surfaces of the lead frame, the transistor, and the one or more bandwidth limiting matching networks, wherein the over-mold has a glass transition temperature greater than 135'C, a flexural modulus less than about 20 GPa, a coefficient of thermal expansion below about 50 pp m/C and a moisture absorption rate less than about 0.5%.

5-8. canceled

The transistor package of claim [[8]] 1 wherein the predetermined frequency band is between about 2.5 GHz to about 2.7 GHz.

canceled

canceled

The transistor package of claim [[14]] I wherein the die attach material has a thermal resistance between about 40 W/m-K and 200 W/m-K and a flexural modulus less than about GPa.

canceled

An amplifier package comprising: two or more transistors; and one or more bandwidth limiting matching networks, each of the one or more bandwidth limiting matching networks coupled to one of an input node and an output node of one of the two or more transistors and configured to limit the a gain response of the transistor outside of a predetermined frequency band In re: Flowers et al. Application No.: 14/289,080 Filed: Page 4 a lead frame having an upper surface to which the two or more transistors and the one or more bandwidth limiting matching networks are attached via a die attach material; and an over-mold surrounding the upper surface and side surfaces of the lead frame, the two or more transistors, and the one or more bandwidth limiting matching networks, wherein the over-mold has a glass transition temperature greater than 1 35' C, a flexural modulus less than about 20 GPa, a coefficient of thermal expansion below about 50 ppm/C and a moisture absorption rate less than about 0.5%, wherein the die attach material is a sintered die attach material.

canceled

23-25. canceled

The amplifier package of claim [[25]] 17 wherein the predetermined frequency band is between about 2.5 GHz to about 2.7 GHz.

canceled

canceled

The transistor package of claim [[1 6]]1 wherein the die attach material is a sintered silver material.

The transistor amplifier package of claim [[16]] 17 wherein the two or more transistors have an area of less 2 mm x 2 mm and a flexural modulus of the die attach material is less than about 10 Gpa.

The transistor amplifier package of claim [[16]] 17 wherein the two or more transistors have an area of less 1 mm x 1 mm and a flexural modulus of the die attach material is less than about 10 2 Gpa.

A transistor package comprising: a transistor; and one or more bandwidth limiting matching networks, each of the one or more bandwidth limiting matching networks coupled to one of an input node and an output node of the transistor and configured to limit a the gain response of the transistor outside of a predetermined frequency band, wherein the one or more bandwidth limiting matching networks comprises a first bandwidth limiting matching network that is coupled to either an input or an output of the transistor, the first bandwidth limiting matching network including a first inductor and a third inductor coupled in series between a radio frequency (RF) input of the first bandwidth limiting matching network and an RF output of the first bandwidth limiting matching network, and a second inductor and a first capacitor coupled in series between a first node that is between the first inductor and the third inductor and a reference voltage; a lead frame having an upper surface to which the transistor and the one or more bandwidth limiting matching networks are attached via a die attach material; and an overmold surrounding the upper surface and side surfaces of the lead frame, the transistor, and the one or more bandwidth limiting matching networks, wherein the over-mold has a glass transition temperature greater than 135'C, a flexural modulus less than about 20 GPa, a coefficient of thermal expansion below about 50 pp m/C and a moisture absorption rate less than about 0.5%.

5-8. canceled

The transistor package of claim [[8]] 1 wherein the predetermined frequency band is between about 2.5 GHz to about 2.7 GHz.

canceled

canceled

The transistor package of claim [[14]] I wherein the die attach material has a thermal resistance between about 40 W/m-K and 200 W/m-K and a flexural modulus less than about GPa.

canceled

An amplifier package comprising: two or more transistors; and one or more bandwidth limiting matching networks, each of the one or more bandwidth limiting matching networks coupled to one of an input node and an output node of one of the two or more transistors and configured to limit the a gain response of the transistor outside of a predetermined frequency band In re: Flowers et al. Application No.: 14/289,080 Filed: Page 4 a lead frame having an upper surface to which the two or more transistors and the one or more bandwidth limiting matching networks are attached via a die attach material; and an over-mold surrounding the upper surface and side surfaces of the lead frame, the two or more transistors, and the one or more bandwidth limiting matching networks, wherein the over-mold has a glass transition temperature greater than 1 35' C, a flexural modulus less than about 20 GPa, a coefficient of thermal expansion below about 50 ppm/C and a moisture absorption rate less than about 0.5%, wherein the die attach material is a sintered die attach material.

canceled

23-25. canceled

The amplifier package of claim [[25]] 17 wherein the predetermined frequency band is between about 2.5 GHz to about 2.7 GHz.

canceled

canceled

The transistor package of claim [[1 6]]1 wherein the die attach material is a sintered silver material.

The transistor amplifier package of claim [[16]] 17 wherein the two or more transistors have an area of less 2 mm x 2 mm and a flexural modulus of the die attach material is less than about 10 Gpa.

The transistor amplifier package of claim [[16]] 17 wherein the two or more transistors have an area of less 1 mm x 1 mm and a flexural modulus of the die attach material is less than about 10 2 Gpa.