Patent
US 11,315,864PACKAGE STRUCTURE OF COMMON-SOURCE COMMON-GATE GALLIUM NITRIDE FIELD-EFFECT TRANSISTOR
Tsung Hsien YEN
US
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Patent
Atlas literature
Patent
US 11,315,864Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2 is a schematic structural diagram of a c o nventi o nal structure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A package structure of a common-source common-gate gallium nitride field-effect transistor, comprising: a lead frame; a gallium nitride field-effect transistor, comprising a first matrix directly disposed on the lead frame, wherein a first drain, a first gate, and a first source are disposed on a surface side of the first matrix, and the first drain and the first gate are separately electrically connected to the lead frame; and a metal oxide semiconductor, comprising a second matrix directly disposed on the lead frame, wherein a second drain, a second gate, and a second source are disposed on a surface side of the second matrix, and the second drain is directly electrically connected to the first source, and the second gate and the second source are separately electrically connected to the lead frame.
The package structure of the common-source common-gate gallium nitride field-effect transistor according to claim 1, wherein a package body covers the lead frame, the gallium nitride field-effect transistor, and the metal oxide semiconductor.
Layer stacks claimed or described, ordered top of device to substrate.
package structure of common-source common-gate gallium nitride field-effect transistor
Materials described outside the worked examples.
gallium nitride
GaN
metal oxide semiconductor
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,315,864Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2 is a schematic structural diagram of a c o nventi o nal structure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A package structure of a common-source common-gate gallium nitride field-effect transistor, comprising: a lead frame; a gallium nitride field-effect transistor, comprising a first matrix directly disposed on the lead frame, wherein a first drain, a first gate, and a first source are disposed on a surface side of the first matrix, and the first drain and the first gate are separately electrically connected to the lead frame; and a metal oxide semiconductor, comprising a second matrix directly disposed on the lead frame, wherein a second drain, a second gate, and a second source are disposed on a surface side of the second matrix, and the second drain is directly electrically connected to the first source, and the second gate and the second source are separately electrically connected to the lead frame.
The package structure of the common-source common-gate gallium nitride field-effect transistor according to claim 1, wherein a package body covers the lead frame, the gallium nitride field-effect transistor, and the metal oxide semiconductor.
Layer stacks claimed or described, ordered top of device to substrate.
package structure of common-source common-gate gallium nitride field-effect transistor
Materials described outside the worked examples.
gallium nitride
GaN
metal oxide semiconductor
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,315,864Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2 is a schematic structural diagram of a c o nventi o nal structure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A package structure of a common-source common-gate gallium nitride field-effect transistor, comprising: a lead frame; a gallium nitride field-effect transistor, comprising a first matrix directly disposed on the lead frame, wherein a first drain, a first gate, and a first source are disposed on a surface side of the first matrix, and the first drain and the first gate are separately electrically connected to the lead frame; and a metal oxide semiconductor, comprising a second matrix directly disposed on the lead frame, wherein a second drain, a second gate, and a second source are disposed on a surface side of the second matrix, and the second drain is directly electrically connected to the first source, and the second gate and the second source are separately electrically connected to the lead frame.
The package structure of the common-source common-gate gallium nitride field-effect transistor according to claim 1, wherein a package body covers the lead frame, the gallium nitride field-effect transistor, and the metal oxide semiconductor.
Layer stacks claimed or described, ordered top of device to substrate.
package structure of common-source common-gate gallium nitride field-effect transistor
Materials described outside the worked examples.
gallium nitride
GaN
metal oxide semiconductor
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,315,864Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 2 is a schematic structural diagram of a c o nventi o nal structure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A package structure of a common-source common-gate gallium nitride field-effect transistor, comprising: a lead frame; a gallium nitride field-effect transistor, comprising a first matrix directly disposed on the lead frame, wherein a first drain, a first gate, and a first source are disposed on a surface side of the first matrix, and the first drain and the first gate are separately electrically connected to the lead frame; and a metal oxide semiconductor, comprising a second matrix directly disposed on the lead frame, wherein a second drain, a second gate, and a second source are disposed on a surface side of the second matrix, and the second drain is directly electrically connected to the first source, and the second gate and the second source are separately electrically connected to the lead frame.
The package structure of the common-source common-gate gallium nitride field-effect transistor according to claim 1, wherein a package body covers the lead frame, the gallium nitride field-effect transistor, and the metal oxide semiconductor.
Layer stacks claimed or described, ordered top of device to substrate.
package structure of common-source common-gate gallium nitride field-effect transistor
Materials described outside the worked examples.
gallium nitride
GaN
metal oxide semiconductor
Related documents with shared materials, methods, properties, or citations.
High-Side Gate Driver for Gallium Nitride Integrated Circuits
High-Side Gate Driver for Gallium Nitride Integrated Circuits
High-Side Gate Driver for Gallium Nitride Integrated Circuits