Patent
US 9,331,735GaN-BASED ACTIVE CANCELLATION CIRCUIT FOR HIGH POWER SIMULTANEOUS TRANSMIT AND RECEIVE SYSTEMS
Alexandros D. Margomenos
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,331,735Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a block diagram of a GaN active cancellation circuit used in a simultaneous transmit and receive system in accordance with the present disclosure; …
FIG. 2 shows a simulated response of cancellation for a 180 0 hybrid couple for two 2 watt (W) signals fed to its input ports in accordance with the present …
FIG. 3 shows a block diagram of a variable attenuator, a variable coarse true time delay, and a variable fine true time delay for amplitude adjustment and phase …
FIG. 4 shows a cross section of a thick Cu interconnection scheme embedded in multi-layer B C B in accordance with the present disclosure; [0017]
FIG. 5 shows a two-tone simulation showing the expected operational performance improvement in accordance with the present disclosure; and [0018]
FIG. 6 shows a table comparing example specifications of the present disclosure to prior art specifications.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A cancellation circuit for a simultaneous transmit and canceled
The cancellation circuit of claim 1 wherein the variable
A method of providing cancellation for a simultaneous canceled
The method of claim 14 wherein: the coarse true time delay comprises thick copper metal ranging from 6-10 p m in thickness; wherein the thick copper metal is embedded in a multi- layer bisbenzocyclobutene (B C B) layer; and wherein the B C B layer is on a SiC substrate.
The method of claim 14 wherein: the fine true time delay comprises thick copper metal ranging from 6-10 p m in thickness; wherein the thick copper metal is embedded in a multi- layer bisbenzocyclobutene (B C B) layer; and wherein the B C B layer is on a Si C substrate.
The method of claim 14 wherein controlling the variable attenuator, the variable coarse true time delay, and the variable fine true time delay using the delta signal to comprises: controlling switches to select one of a plurality of coarse true time delays in the variable coarse true time delay; and
The method of claim 14 further comprising: switching the output having a sum of the receive signal and a leakage signal to be directly coupled to the receive to
A cancellation circuit for a simultaneous transmit and canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN active cancellation circuit for STAR system
No layer stack recorded.
cancellation circuit for simultaneous transmit and receive (claim 20)
No layer stack recorded.
Materials described outside the worked examples.
thick copper metal
Cu
bisbenzocyclobutene (BCB)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
linearity improvement over prior art | 18 dB | — |
power handling improvement over prior art |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,331,735Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a block diagram of a GaN active cancellation circuit used in a simultaneous transmit and receive system in accordance with the present disclosure; …
FIG. 2 shows a simulated response of cancellation for a 180 0 hybrid couple for two 2 watt (W) signals fed to its input ports in accordance with the present …
FIG. 3 shows a block diagram of a variable attenuator, a variable coarse true time delay, and a variable fine true time delay for amplitude adjustment and phase …
FIG. 4 shows a cross section of a thick Cu interconnection scheme embedded in multi-layer B C B in accordance with the present disclosure; [0017]
FIG. 5 shows a two-tone simulation showing the expected operational performance improvement in accordance with the present disclosure; and [0018]
FIG. 6 shows a table comparing example specifications of the present disclosure to prior art specifications.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A cancellation circuit for a simultaneous transmit and canceled
The cancellation circuit of claim 1 wherein the variable
A method of providing cancellation for a simultaneous canceled
The method of claim 14 wherein: the coarse true time delay comprises thick copper metal ranging from 6-10 p m in thickness; wherein the thick copper metal is embedded in a multi- layer bisbenzocyclobutene (B C B) layer; and wherein the B C B layer is on a SiC substrate.
The method of claim 14 wherein: the fine true time delay comprises thick copper metal ranging from 6-10 p m in thickness; wherein the thick copper metal is embedded in a multi- layer bisbenzocyclobutene (B C B) layer; and wherein the B C B layer is on a Si C substrate.
The method of claim 14 wherein controlling the variable attenuator, the variable coarse true time delay, and the variable fine true time delay using the delta signal to comprises: controlling switches to select one of a plurality of coarse true time delays in the variable coarse true time delay; and
The method of claim 14 further comprising: switching the output having a sum of the receive signal and a leakage signal to be directly coupled to the receive to
A cancellation circuit for a simultaneous transmit and canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN active cancellation circuit for STAR system
No layer stack recorded.
cancellation circuit for simultaneous transmit and receive (claim 20)
No layer stack recorded.
Materials described outside the worked examples.
thick copper metal
Cu
bisbenzocyclobutene (BCB)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
linearity improvement over prior art | 18 dB | — |
power handling improvement over prior art |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,331,735Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a block diagram of a GaN active cancellation circuit used in a simultaneous transmit and receive system in accordance with the present disclosure; …
FIG. 2 shows a simulated response of cancellation for a 180 0 hybrid couple for two 2 watt (W) signals fed to its input ports in accordance with the present …
FIG. 3 shows a block diagram of a variable attenuator, a variable coarse true time delay, and a variable fine true time delay for amplitude adjustment and phase …
FIG. 4 shows a cross section of a thick Cu interconnection scheme embedded in multi-layer B C B in accordance with the present disclosure; [0017]
FIG. 5 shows a two-tone simulation showing the expected operational performance improvement in accordance with the present disclosure; and [0018]
FIG. 6 shows a table comparing example specifications of the present disclosure to prior art specifications.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A cancellation circuit for a simultaneous transmit and canceled
The cancellation circuit of claim 1 wherein the variable
A method of providing cancellation for a simultaneous canceled
The method of claim 14 wherein: the coarse true time delay comprises thick copper metal ranging from 6-10 p m in thickness; wherein the thick copper metal is embedded in a multi- layer bisbenzocyclobutene (B C B) layer; and wherein the B C B layer is on a SiC substrate.
The method of claim 14 wherein: the fine true time delay comprises thick copper metal ranging from 6-10 p m in thickness; wherein the thick copper metal is embedded in a multi- layer bisbenzocyclobutene (B C B) layer; and wherein the B C B layer is on a Si C substrate.
The method of claim 14 wherein controlling the variable attenuator, the variable coarse true time delay, and the variable fine true time delay using the delta signal to comprises: controlling switches to select one of a plurality of coarse true time delays in the variable coarse true time delay; and
The method of claim 14 further comprising: switching the output having a sum of the receive signal and a leakage signal to be directly coupled to the receive to
A cancellation circuit for a simultaneous transmit and canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN active cancellation circuit for STAR system
No layer stack recorded.
cancellation circuit for simultaneous transmit and receive (claim 20)
No layer stack recorded.
Materials described outside the worked examples.
thick copper metal
Cu
bisbenzocyclobutene (BCB)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
linearity improvement over prior art | 18 dB | — |
power handling improvement over prior art |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,331,735Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a block diagram of a GaN active cancellation circuit used in a simultaneous transmit and receive system in accordance with the present disclosure; …
FIG. 2 shows a simulated response of cancellation for a 180 0 hybrid couple for two 2 watt (W) signals fed to its input ports in accordance with the present …
FIG. 3 shows a block diagram of a variable attenuator, a variable coarse true time delay, and a variable fine true time delay for amplitude adjustment and phase …
FIG. 4 shows a cross section of a thick Cu interconnection scheme embedded in multi-layer B C B in accordance with the present disclosure; [0017]
FIG. 5 shows a two-tone simulation showing the expected operational performance improvement in accordance with the present disclosure; and [0018]
FIG. 6 shows a table comparing example specifications of the present disclosure to prior art specifications.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A cancellation circuit for a simultaneous transmit and canceled
The cancellation circuit of claim 1 wherein the variable
A method of providing cancellation for a simultaneous canceled
The method of claim 14 wherein: the coarse true time delay comprises thick copper metal ranging from 6-10 p m in thickness; wherein the thick copper metal is embedded in a multi- layer bisbenzocyclobutene (B C B) layer; and wherein the B C B layer is on a SiC substrate.
The method of claim 14 wherein: the fine true time delay comprises thick copper metal ranging from 6-10 p m in thickness; wherein the thick copper metal is embedded in a multi- layer bisbenzocyclobutene (B C B) layer; and wherein the B C B layer is on a Si C substrate.
The method of claim 14 wherein controlling the variable attenuator, the variable coarse true time delay, and the variable fine true time delay using the delta signal to comprises: controlling switches to select one of a plurality of coarse true time delays in the variable coarse true time delay; and
The method of claim 14 further comprising: switching the output having a sum of the receive signal and a leakage signal to be directly coupled to the receive to
A cancellation circuit for a simultaneous transmit and canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN active cancellation circuit for STAR system
No layer stack recorded.
cancellation circuit for simultaneous transmit and receive (claim 20)
No layer stack recorded.
Materials described outside the worked examples.
thick copper metal
Cu
bisbenzocyclobutene (BCB)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
linearity improvement over prior art | 18 dB | — |
power handling improvement over prior art |
Related documents with shared materials, methods, properties, or citations.
SiC substrate
SiC
GaN
| — |
signal loss reduction improvement over prior art | 5x | — |
SNR improvement for same IMR and instantaneous bandwidth | 30 dB | — |
copper metal thickness in true time delay (claimed range) | 6–10 µm | Cu |
— | 1–2 W | — |
SiC substrate
SiC
GaN
| — |
signal loss reduction improvement over prior art | 5x | — |
SNR improvement for same IMR and instantaneous bandwidth | 30 dB | — |
copper metal thickness in true time delay (claimed range) | 6–10 µm | Cu |
— | 1–2 W | — |
SiC substrate
SiC
GaN
| — |
signal loss reduction improvement over prior art | 5x | — |
SNR improvement for same IMR and instantaneous bandwidth | 30 dB | — |
copper metal thickness in true time delay (claimed range) | 6–10 µm | Cu |
— | 1–2 W | — |
SiC substrate
SiC
GaN
| — |
signal loss reduction improvement over prior art | 5x | — |
SNR improvement for same IMR and instantaneous bandwidth | 30 dB | — |
copper metal thickness in true time delay (claimed range) | 6–10 µm | Cu |
— | 1–2 W | — |