Patent
US 10,928,351PLASMA-MODIFIED, EPITAXIAL FABRICATED GRAPHENE ON SIC FOR THE ELECTROCHEMICAL DETECTION OF TNT
Scott A. Trammell
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,928,351Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a schematic representation of an exemplary electrochemical cell;
FIG. 2 shows a figure of an exemplary electrochemical cell;
FIG. 3 shows a figure of an exemplary electrochemical cell;
FIG. 4 shows a schematic of an exemplary method of manufacturing an exemplary electrochemical cell. Detailed Description Epitaxial graphene may be synthesized …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electrochemical cell comprising: a working electrode in contact with an aqueous electrolyte solution; a counter electrode in contact with the aqueous electrolyte solution; and a reference electrode in contact with the aqueous electrolyte solution; wherein, the working electrode comprises a plasma modified epitaxial graphene surface synthesized from SiC. Original
The electrochemical cell of claim 1, wherein the graphene surface is approximately 1.6 mm 2. Original
The electrochemical cell of claim 1, further comprising a cell on top of the working electrode comprising an open-ended container and a gasket disposed between the container and the working electrode and configured to prevent leaks therebetween. Original
The electrochemical cell of claim 1, wherein the working electrode is a single layer, non-flaky detection element. Original
The electrochemical cell of claim 1, wherein the working electrode comprises a surface atomic percentage of oxygen, as measured by X-ray photoelectron spectroscopy, of 10-15% 02. Original
The electrochemical cell of claim 1, wherein thickness of the epitaxial graphene layers monolayers. Currently amended
The method of claim 1, wherein the step of chemically modifying the epitaxial graphene comprises the steps of: producing pulsed high-energy electron beams by driving a linear hollow cathode with a -2 kV square wave for a duration of 1 ms at a duty factor of 10 %; passing the beams through a slot in a ground anode and terminating the beams at a second grounded anode located further downstream of the beam, wherein the slotted anode defines a cross section of the beams, and volume between the two anodes defines a processing region. Withdrawn
A method of fabricating an electrochemical sensor having epitaxial graphene on SiC, the method comprising the steps of: preparing a SiC surface for epitaxial graphene growth by in-situ H₂ etching, thereby forming bilayer stepped morphology and removing any polishing scratches created during the manufacturing of the SiC substrate; sublimating Si from semi-insulating, Si-face, on-axis, 6H-silicon carbide (Si C) substrates in a chemical vapor deposition reactor; cooling the epitaxial graphene on silicon carbide; evacuating the reactor; chemically modifying the epitaxial graphene using electron-beam generated plasmas to introduce and control relative concentration of functional groups on the graphene surface. Withdrawn
The method of claim 9, wherein the step of sublimating takes place at a temperature of approximately 1540 0 C and a pressure of approximately 100 mbar. Withdrawn
The method of claim 9, wherein the step of sublimating includes suppressing the sublimation of Si in order to control the thickness of the epitaxial graphene layers using ambient Ar. Withdrawn
The method of claim 9, wherein the step of cooling is conducted in Ar to a temperature 800 °C. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
electrochemical cell for TNT detection
Materials described outside the worked examples.
plasma modified epitaxial graphene on SiC
6H-silicon carbide (SiC) substrate
SiC
oxygen (O₂) reactive gas
O₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
surface atomic percentage of oxygen by XPS (claimed range) | 10–15 | plasma modified epitaxial graphene on SiC |
surface atomic percentage of oxygen by XPS (specific value) | 11.7 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,928,351Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a schematic representation of an exemplary electrochemical cell;
FIG. 2 shows a figure of an exemplary electrochemical cell;
FIG. 3 shows a figure of an exemplary electrochemical cell;
FIG. 4 shows a schematic of an exemplary method of manufacturing an exemplary electrochemical cell. Detailed Description Epitaxial graphene may be synthesized …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electrochemical cell comprising: a working electrode in contact with an aqueous electrolyte solution; a counter electrode in contact with the aqueous electrolyte solution; and a reference electrode in contact with the aqueous electrolyte solution; wherein, the working electrode comprises a plasma modified epitaxial graphene surface synthesized from SiC. Original
The electrochemical cell of claim 1, wherein the graphene surface is approximately 1.6 mm 2. Original
The electrochemical cell of claim 1, further comprising a cell on top of the working electrode comprising an open-ended container and a gasket disposed between the container and the working electrode and configured to prevent leaks therebetween. Original
The electrochemical cell of claim 1, wherein the working electrode is a single layer, non-flaky detection element. Original
The electrochemical cell of claim 1, wherein the working electrode comprises a surface atomic percentage of oxygen, as measured by X-ray photoelectron spectroscopy, of 10-15% 02. Original
The electrochemical cell of claim 1, wherein thickness of the epitaxial graphene layers monolayers. Currently amended
The method of claim 1, wherein the step of chemically modifying the epitaxial graphene comprises the steps of: producing pulsed high-energy electron beams by driving a linear hollow cathode with a -2 kV square wave for a duration of 1 ms at a duty factor of 10 %; passing the beams through a slot in a ground anode and terminating the beams at a second grounded anode located further downstream of the beam, wherein the slotted anode defines a cross section of the beams, and volume between the two anodes defines a processing region. Withdrawn
A method of fabricating an electrochemical sensor having epitaxial graphene on SiC, the method comprising the steps of: preparing a SiC surface for epitaxial graphene growth by in-situ H₂ etching, thereby forming bilayer stepped morphology and removing any polishing scratches created during the manufacturing of the SiC substrate; sublimating Si from semi-insulating, Si-face, on-axis, 6H-silicon carbide (Si C) substrates in a chemical vapor deposition reactor; cooling the epitaxial graphene on silicon carbide; evacuating the reactor; chemically modifying the epitaxial graphene using electron-beam generated plasmas to introduce and control relative concentration of functional groups on the graphene surface. Withdrawn
The method of claim 9, wherein the step of sublimating takes place at a temperature of approximately 1540 0 C and a pressure of approximately 100 mbar. Withdrawn
The method of claim 9, wherein the step of sublimating includes suppressing the sublimation of Si in order to control the thickness of the epitaxial graphene layers using ambient Ar. Withdrawn
The method of claim 9, wherein the step of cooling is conducted in Ar to a temperature 800 °C. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
electrochemical cell for TNT detection
Materials described outside the worked examples.
plasma modified epitaxial graphene on SiC
6H-silicon carbide (SiC) substrate
SiC
oxygen (O₂) reactive gas
O₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
surface atomic percentage of oxygen by XPS (claimed range) | 10–15 | plasma modified epitaxial graphene on SiC |
surface atomic percentage of oxygen by XPS (specific value) | 11.7 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,928,351Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a schematic representation of an exemplary electrochemical cell;
FIG. 2 shows a figure of an exemplary electrochemical cell;
FIG. 3 shows a figure of an exemplary electrochemical cell;
FIG. 4 shows a schematic of an exemplary method of manufacturing an exemplary electrochemical cell. Detailed Description Epitaxial graphene may be synthesized …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electrochemical cell comprising: a working electrode in contact with an aqueous electrolyte solution; a counter electrode in contact with the aqueous electrolyte solution; and a reference electrode in contact with the aqueous electrolyte solution; wherein, the working electrode comprises a plasma modified epitaxial graphene surface synthesized from SiC. Original
The electrochemical cell of claim 1, wherein the graphene surface is approximately 1.6 mm 2. Original
The electrochemical cell of claim 1, further comprising a cell on top of the working electrode comprising an open-ended container and a gasket disposed between the container and the working electrode and configured to prevent leaks therebetween. Original
The electrochemical cell of claim 1, wherein the working electrode is a single layer, non-flaky detection element. Original
The electrochemical cell of claim 1, wherein the working electrode comprises a surface atomic percentage of oxygen, as measured by X-ray photoelectron spectroscopy, of 10-15% 02. Original
The electrochemical cell of claim 1, wherein thickness of the epitaxial graphene layers monolayers. Currently amended
The method of claim 1, wherein the step of chemically modifying the epitaxial graphene comprises the steps of: producing pulsed high-energy electron beams by driving a linear hollow cathode with a -2 kV square wave for a duration of 1 ms at a duty factor of 10 %; passing the beams through a slot in a ground anode and terminating the beams at a second grounded anode located further downstream of the beam, wherein the slotted anode defines a cross section of the beams, and volume between the two anodes defines a processing region. Withdrawn
A method of fabricating an electrochemical sensor having epitaxial graphene on SiC, the method comprising the steps of: preparing a SiC surface for epitaxial graphene growth by in-situ H₂ etching, thereby forming bilayer stepped morphology and removing any polishing scratches created during the manufacturing of the SiC substrate; sublimating Si from semi-insulating, Si-face, on-axis, 6H-silicon carbide (Si C) substrates in a chemical vapor deposition reactor; cooling the epitaxial graphene on silicon carbide; evacuating the reactor; chemically modifying the epitaxial graphene using electron-beam generated plasmas to introduce and control relative concentration of functional groups on the graphene surface. Withdrawn
The method of claim 9, wherein the step of sublimating takes place at a temperature of approximately 1540 0 C and a pressure of approximately 100 mbar. Withdrawn
The method of claim 9, wherein the step of sublimating includes suppressing the sublimation of Si in order to control the thickness of the epitaxial graphene layers using ambient Ar. Withdrawn
The method of claim 9, wherein the step of cooling is conducted in Ar to a temperature 800 °C. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
electrochemical cell for TNT detection
Materials described outside the worked examples.
plasma modified epitaxial graphene on SiC
6H-silicon carbide (SiC) substrate
SiC
oxygen (O₂) reactive gas
O₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
surface atomic percentage of oxygen by XPS (claimed range) | 10–15 | plasma modified epitaxial graphene on SiC |
surface atomic percentage of oxygen by XPS (specific value) | 11.7 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,928,351Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows a schematic representation of an exemplary electrochemical cell;
FIG. 2 shows a figure of an exemplary electrochemical cell;
FIG. 3 shows a figure of an exemplary electrochemical cell;
FIG. 4 shows a schematic of an exemplary method of manufacturing an exemplary electrochemical cell. Detailed Description Epitaxial graphene may be synthesized …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An electrochemical cell comprising: a working electrode in contact with an aqueous electrolyte solution; a counter electrode in contact with the aqueous electrolyte solution; and a reference electrode in contact with the aqueous electrolyte solution; wherein, the working electrode comprises a plasma modified epitaxial graphene surface synthesized from SiC. Original
The electrochemical cell of claim 1, wherein the graphene surface is approximately 1.6 mm 2. Original
The electrochemical cell of claim 1, further comprising a cell on top of the working electrode comprising an open-ended container and a gasket disposed between the container and the working electrode and configured to prevent leaks therebetween. Original
The electrochemical cell of claim 1, wherein the working electrode is a single layer, non-flaky detection element. Original
The electrochemical cell of claim 1, wherein the working electrode comprises a surface atomic percentage of oxygen, as measured by X-ray photoelectron spectroscopy, of 10-15% 02. Original
The electrochemical cell of claim 1, wherein thickness of the epitaxial graphene layers monolayers. Currently amended
The method of claim 1, wherein the step of chemically modifying the epitaxial graphene comprises the steps of: producing pulsed high-energy electron beams by driving a linear hollow cathode with a -2 kV square wave for a duration of 1 ms at a duty factor of 10 %; passing the beams through a slot in a ground anode and terminating the beams at a second grounded anode located further downstream of the beam, wherein the slotted anode defines a cross section of the beams, and volume between the two anodes defines a processing region. Withdrawn
A method of fabricating an electrochemical sensor having epitaxial graphene on SiC, the method comprising the steps of: preparing a SiC surface for epitaxial graphene growth by in-situ H₂ etching, thereby forming bilayer stepped morphology and removing any polishing scratches created during the manufacturing of the SiC substrate; sublimating Si from semi-insulating, Si-face, on-axis, 6H-silicon carbide (Si C) substrates in a chemical vapor deposition reactor; cooling the epitaxial graphene on silicon carbide; evacuating the reactor; chemically modifying the epitaxial graphene using electron-beam generated plasmas to introduce and control relative concentration of functional groups on the graphene surface. Withdrawn
The method of claim 9, wherein the step of sublimating takes place at a temperature of approximately 1540 0 C and a pressure of approximately 100 mbar. Withdrawn
The method of claim 9, wherein the step of sublimating includes suppressing the sublimation of Si in order to control the thickness of the epitaxial graphene layers using ambient Ar. Withdrawn
The method of claim 9, wherein the step of cooling is conducted in Ar to a temperature 800 °C. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
electrochemical cell for TNT detection
Materials described outside the worked examples.
plasma modified epitaxial graphene on SiC
6H-silicon carbide (SiC) substrate
SiC
oxygen (O₂) reactive gas
O₂
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
surface atomic percentage of oxygen by XPS (claimed range) | 10–15 | plasma modified epitaxial graphene on SiC |
surface atomic percentage of oxygen by XPS (specific value) | 11.7 |
Related documents with shared materials, methods, properties, or citations.
nitrogen (N₂) reactive gas
N₂
argon
Ar
plasma modified epitaxial graphene on SiC |
limit of detection for TNT | 20 | plasma modified epitaxial graphene on SiC |
Pressure | 25–90 mTorr | — |
SpectraFormer: an Attention-Based Raman Unmixing Tool for Accessing the Graphene Buffer-Layer Signature on SiC
nitrogen (N₂) reactive gas
N₂
argon
Ar
plasma modified epitaxial graphene on SiC |
limit of detection for TNT | 20 | plasma modified epitaxial graphene on SiC |
Pressure | 25–90 mTorr | — |
SpectraFormer: an Attention-Based Raman Unmixing Tool for Accessing the Graphene Buffer-Layer Signature on SiC
nitrogen (N₂) reactive gas
N₂
argon
Ar
plasma modified epitaxial graphene on SiC |
limit of detection for TNT | 20 | plasma modified epitaxial graphene on SiC |
Pressure | 25–90 mTorr | — |
SpectraFormer: an Attention-Based Raman Unmixing Tool for Accessing the Graphene Buffer-Layer Signature on SiC
nitrogen (N₂) reactive gas
N₂
argon
Ar
plasma modified epitaxial graphene on SiC |
limit of detection for TNT | 20 | plasma modified epitaxial graphene on SiC |
Pressure | 25–90 mTorr | — |
SpectraFormer: an Attention-Based Raman Unmixing Tool for Accessing the Graphene Buffer-Layer Signature on SiC