Research paper
Computational DFTComputational AimdEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 property
1 property
1 property
3 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Formation Energy | Ef | 0.421eV | — | |||
| Formation Energy | Ef | 0.151eV | — | |||
| Formation Energy | Ef | -0.054eV | — | |||
| Formation Energy | Ef | -0.031eV | — | |||
| Formation Energy Difference | stripe vs Pb(111)-like | -0.008eV/Pb | — | |||
| Periodicity | stripe periodicity | 2.3nm | — |
Related documents with shared materials, methods, properties, or citations.
Ultrafast Band-Gap Renormalization in Bilayer Graphene
Spectral fringes without subcycles in Schwinger pair production and Dirac materials
Quantum-Ready Microwave Detection with Scalable Graphene Bolometers in the Strong Localization Regime
Plasma Modified Epitaxial Fabricated Graphene on SiC for Electrochemical Trace Detection of Explosives
Direct observation of Floquet-Bloch states in monolayer graphene
Pronounced scale-dependent charge carrier density in graphene quantum Hall devices
Rapid low-temperature synthesis of graphene-coated SiC substrates for remote and van der Waals epitaxy
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 property
1 property
1 property
3 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Formation Energy | Ef | 0.421eV | — | |||
| Formation Energy | Ef | 0.151eV | — | |||
| Formation Energy | Ef | -0.054eV | — | |||
| Formation Energy | Ef | -0.031eV | — | |||
| Formation Energy Difference | stripe vs Pb(111)-like | -0.008eV/Pb | — | |||
| Periodicity | stripe periodicity | 2.3nm | — |
Related documents with shared materials, methods, properties, or citations.
Ultrafast Band-Gap Renormalization in Bilayer Graphene
Spectral fringes without subcycles in Schwinger pair production and Dirac materials
Quantum-Ready Microwave Detection with Scalable Graphene Bolometers in the Strong Localization Regime
Plasma Modified Epitaxial Fabricated Graphene on SiC for Electrochemical Trace Detection of Explosives
Direct observation of Floquet-Bloch states in monolayer graphene
Pronounced scale-dependent charge carrier density in graphene quantum Hall devices
Rapid low-temperature synthesis of graphene-coated SiC substrates for remote and van der Waals epitaxy
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 property
1 property
1 property
3 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Formation Energy | Ef | 0.421eV | — | |||
| Formation Energy | Ef | 0.151eV | — | |||
| Formation Energy | Ef | -0.054eV | — | |||
| Formation Energy | Ef | -0.031eV | — | |||
| Formation Energy Difference | stripe vs Pb(111)-like | -0.008eV/Pb | — | |||
| Periodicity | stripe periodicity | 2.3nm | — |
Related documents with shared materials, methods, properties, or citations.
Ultrafast Band-Gap Renormalization in Bilayer Graphene
Spectral fringes without subcycles in Schwinger pair production and Dirac materials
Quantum-Ready Microwave Detection with Scalable Graphene Bolometers in the Strong Localization Regime
Plasma Modified Epitaxial Fabricated Graphene on SiC for Electrochemical Trace Detection of Explosives
Direct observation of Floquet-Bloch states in monolayer graphene
Pronounced scale-dependent charge carrier density in graphene quantum Hall devices
Rapid low-temperature synthesis of graphene-coated SiC substrates for remote and van der Waals epitaxy
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 property
1 property
1 property
3 properties
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Formation Energy | Ef | 0.421eV | — | |||
| Formation Energy | Ef | 0.151eV | — | |||
| Formation Energy | Ef | -0.054eV | — | |||
| Formation Energy | Ef | -0.031eV | — | |||
| Formation Energy Difference | stripe vs Pb(111)-like | -0.008eV/Pb | — | |||
| Periodicity | stripe periodicity | 2.3nm | — |
Related documents with shared materials, methods, properties, or citations.
Ultrafast Band-Gap Renormalization in Bilayer Graphene
Spectral fringes without subcycles in Schwinger pair production and Dirac materials
Quantum-Ready Microwave Detection with Scalable Graphene Bolometers in the Strong Localization Regime
Plasma Modified Epitaxial Fabricated Graphene on SiC for Electrochemical Trace Detection of Explosives
Direct observation of Floquet-Bloch states in monolayer graphene
Pronounced scale-dependent charge carrier density in graphene quantum Hall devices
Rapid low-temperature synthesis of graphene-coated SiC substrates for remote and van der Waals epitaxy