Research paper
Experimental CharacterizationTheoretical| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Band Gap | Ug | 250meV | — | |||
| Interlayer Potential Asymmetry | U | 300meV | — | |||
| Carrier Density | doping-induced free carrier density | 85000000000000cm⁻² | — | |||
| Energy Offset | CNP below electrochemical potential | 600meV | — | |||
| Energy Offset | VBM at KAg | 0.7eV | — | |||
| Energy Offset | saddle point at MAg | 1.27eV | — | |||
| Band Shift | ΔEG | -50meV | — | |||
| Band Shift | ΔEAg | 125meV | — | |||
| Interlayer Potential Asymmetry Change | ΔU | 100meV | — | |||
| Electron Temperature Relaxation Time | τoe | 70fs | — | |||
| Electron Temperature Relaxation Time | τae | 3.5ps | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Band Gap | Ug | 250meV | — | |||
| Interlayer Potential Asymmetry | U | 300meV | — | |||
| Carrier Density | doping-induced free carrier density | 85000000000000cm⁻² | — | |||
| Energy Offset | CNP below electrochemical potential | 600meV | — | |||
| Energy Offset | VBM at KAg | 0.7eV | — | |||
| Energy Offset | saddle point at MAg | 1.27eV | — | |||
| Band Shift | ΔEG | -50meV | — | |||
| Band Shift | ΔEAg | 125meV | — | |||
| Interlayer Potential Asymmetry Change | ΔU | 100meV | — | |||
| Electron Temperature Relaxation Time | τoe | 70fs | — | |||
| Electron Temperature Relaxation Time | τae | 3.5ps | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Band Gap | Ug | 250meV | — | |||
| Interlayer Potential Asymmetry | U | 300meV | — | |||
| Carrier Density | doping-induced free carrier density | 85000000000000cm⁻² | — | |||
| Energy Offset | CNP below electrochemical potential | 600meV | — | |||
| Energy Offset | VBM at KAg | 0.7eV | — | |||
| Energy Offset | saddle point at MAg | 1.27eV | — | |||
| Band Shift | ΔEG | -50meV | — | |||
| Band Shift | ΔEAg | 125meV | — | |||
| Interlayer Potential Asymmetry Change | ΔU | 100meV | — | |||
| Electron Temperature Relaxation Time | τoe | 70fs | — | |||
| Electron Temperature Relaxation Time | τae | 3.5ps | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Band Gap | Ug | 250meV | — | |||
| Interlayer Potential Asymmetry | U | 300meV | — | |||
| Carrier Density | doping-induced free carrier density | 85000000000000cm⁻² | — | |||
| Energy Offset | CNP below electrochemical potential | 600meV | — | |||
| Energy Offset | VBM at KAg | 0.7eV | — | |||
| Energy Offset | saddle point at MAg | 1.27eV | — | |||
| Band Shift | ΔEG | -50meV | — | |||
| Band Shift | ΔEAg | 125meV | — | |||
| Interlayer Potential Asymmetry Change | ΔU | 100meV | — | |||
| Electron Temperature Relaxation Time | τoe | 70fs | — | |||
| Electron Temperature Relaxation Time | τae | 3.5ps | — |