Spectral fringes without subcycles in Schwinger pair production and Dirac materials | Matter42 Literature
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Spectral fringes without subcycles in Schwinger pair production and Dirac materials
I. A. Aleksandrov, M. A. Dorodnyi, E. D. Akimkina
arXiv·2026·arXiv:2605.19086
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Generic gapped two-dimensional Dirac model used as a solid-state Schwinger analog for epitaxial graphene on SiC under a spatially uniform, time-dependent in-plane electric field.
3 properties
SimulatedCStudied Material
Graphene-on-SiC reference context mentioned for the experimentally relevant gapped Dirac realization.
Spectral fringes without subcycles in Schwinger pair production and Dirac materials
I. A. Aleksandrov, M. A. Dorodnyi, E. D. Akimkina
arXiv·2026·arXiv:2605.19086
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Generic gapped two-dimensional Dirac model used as a solid-state Schwinger analog for epitaxial graphene on SiC under a spatially uniform, time-dependent in-plane electric field.
3 properties
SimulatedCStudied Material
Graphene-on-SiC reference context mentioned for the experimentally relevant gapped Dirac realization.
Spectral fringes without subcycles in Schwinger pair production and Dirac materials
I. A. Aleksandrov, M. A. Dorodnyi, E. D. Akimkina
arXiv·2026·arXiv:2605.19086
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Generic gapped two-dimensional Dirac model used as a solid-state Schwinger analog for epitaxial graphene on SiC under a spatially uniform, time-dependent in-plane electric field.
3 properties
SimulatedCStudied Material
Graphene-on-SiC reference context mentioned for the experimentally relevant gapped Dirac realization.
Spectral fringes without subcycles in Schwinger pair production and Dirac materials
I. A. Aleksandrov, M. A. Dorodnyi, E. D. Akimkina
arXiv·2026·arXiv:2605.19086
Samples
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Generic gapped two-dimensional Dirac model used as a solid-state Schwinger analog for epitaxial graphene on SiC under a spatially uniform, time-dependent in-plane electric field.
3 properties
SimulatedCStudied Material
Graphene-on-SiC reference context mentioned for the experimentally relevant gapped Dirac realization.
