Abstract

The paper reports a reversible switching of Bi intercalated under an epitaxial graphene buffer layer on SiC(0001) between a precursor state and a bismuthene state by hydrogenation and dehydrogenation. NIXSW imaging, LEED, ARPES, AFM, and XPS are used to determine the structure, electronic properties, and ambient stability of the Bi layer and its graphene-protected heterostructure.

Abstract

The paper reports a reversible switching of Bi intercalated under an epitaxial graphene buffer layer on SiC(0001) between a precursor state and a bismuthene state by hydrogenation and dehydrogenation. NIXSW imaging, LEED, ARPES, AFM, and XPS are used to determine the structure, electronic properties, and ambient stability of the Bi layer and its graphene-protected heterostructure.

Abstract

The paper reports a reversible switching of Bi intercalated under an epitaxial graphene buffer layer on SiC(0001) between a precursor state and a bismuthene state by hydrogenation and dehydrogenation. NIXSW imaging, LEED, ARPES, AFM, and XPS are used to determine the structure, electronic properties, and ambient stability of the Bi layer and its graphene-protected heterostructure.

Abstract

The paper reports a reversible switching of Bi intercalated under an epitaxial graphene buffer layer on SiC(0001) between a precursor state and a bismuthene state by hydrogenation and dehydrogenation. NIXSW imaging, LEED, ARPES, AFM, and XPS are used to determine the structure, electronic properties, and ambient stability of the Bi layer and its graphene-protected heterostructure.