METHOD FOR FABRICATING GALLIUM NITRIDE BASED SEMICONDUCTOR ELECTRONIC DEVICE

Hiromu SHIOMI

Patent

Atlas literature

Patent

US 7,998,836

METHOD FOR FABRICATING GALLIUM NITRIDE BASED SEMICONDUCTOR ELECTRONIC DEVICE

Hiromu SHIOMI, Shinsuke Fujiwara, Yu Saitoh, Makoto Kiyama

2011-08-16·US

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

1 independent · 19 dependent

1
Independentgallium nitride-based semiconductorconductive substrategallium nitride-based semiconductor electronic device
A method of fabricating a gallium nitride-based semiconductor electronic device, the method comprising the steps of: preparing a substrate having a ﬁrst surface and a second surface, 5 the ﬁrst surface being conﬁgured to deposit a gallium nitride-based semiconductor, the second surface being provided on the side opposite to the ﬁrst surface; depositing a semiconductor region on the ﬁrst surface of the substrate into an epitaxial substrate, the semiconductor region 10 comprising at least one gallium nitride-based semiconductor layer; preparing a conductive substrate; bonding the conductive substrate to the epitaxial substrate into a ﬁrst substrate product such that the semiconductor region is provided between the ﬁrst surface of the substrate and the conductive substrate; 15 and separating the semiconductor region and the substrate from each other by laser lift-oﬀ involving irradiation of the second surface of the substrate with laser light, subsequent to the bonding of the conductive substrate to the epitaxial substrate, to fabricate a second substrate 20 product comprising the conductive substrate and the semiconductor region, wherein the semiconductor region of the second substrate product has an exposed surface; the substrate comprises a support comprising a material diﬀerent 25 from the gallium nitride-based semiconductor; the support is exposed on the second surface of the substrate; 27 FP 10-0587- OO US-SE and at least one of a plurality of grooves and a plurality of ridges is arrayed on the second surface of the substrate.
1. 2
  Dependent← claim 1gallium nitride-based semiconductor
  The method according to claim 1 further comprising the step of 5 separating the semiconductor region and the substrate from each other, and then forming a ﬁrst electrode on the exposed surface of the second substrate product, wherein the semiconductor region includes a contact layer of gallium nitride-based semiconductor doped with an n-type dopant; and 10 the contact layer is exposed on the exposed surface of the semiconductor region.
2. 6
  Dependent← claim 1
  The method according to claim 1, wherein 28 FP 10-0587- OO US-SE the exposed surface is a polished surface.
3. 7
  Dependent← claim 1
  The method according to claim 1, wherein the grooves have a depth of not less than 5 p m and not more than 300 pm.
4. 8
  Dependent← claim 1
  5 8. The method according to claim 1, wherein the grooves have a depth of not less than 1/10 of the thickness of the support and not more than 2/3 of the thickness of the support.
5. 9
  Dependent← claim 1
  The method according to claim 1, wherein the ridges have a height of not less than 5 p m and not more than 10 300 pm.
6. 10
  Dependent← claim 1
  The method according to claim 1, wherein the ridges have a height of not less than 1/10 of the thickness of the support and not more than 2/3 of the thickness of the support.
7. 11
  Dependent← claim 1Al₂O₃SiCAlN
  The method according to claim 1, wherein 15 the support includes one of sapphire, silicon carbide, and aluminum nitride.
8. 12
  Dependent← claim 1field plate electrode structure on GaN semiconductor
  The method according to claim 1 further comprising the step of forming an insulating ﬁlm on a principal surface of the semiconductor region of the epitaxial substrate, and then forming an electrode 20 structure, prior to fabrication of the ﬁrst substrate product, wherein the electrode structure includes a ﬁeld plate electrode and a second electrode, the ﬁeld plate electrode being provided on the insulating ﬁlm, the second electrode being in contact with the principal surface of the semiconductor region through an opening of the insulating ﬁlm; and 25 the second electrode and the ﬁeld plate electrode are electrically connected to the conductive substrate.
9. 14
  Dependent← claim 1Schottky barrier diode
  The method according to claim 1, wherein the gallium nitride-based semiconductor electronic device 5 includes a Schottky barrier diode.
10. 16
  Dependent← claim 1p-n junction diode
  15 16. The method according to claim 1, wherein the gallium nitride-based semiconductor electronic device includes a p-n junction diode.
11. 17
  Dependent← claim 1
  The method according to claim 1, wherein the semiconductor region is provided with a sacriﬁced layer 20 including a semiconductor layer having a smaller band gap than that of the support; the band gap of the sacriﬁced layer in the semiconductor layer is smaller than energy corresponding to a wavelength of the laser light; the sacriﬁced layer has the smallest band gap in the 25 semiconductor region; and the sacriﬁced layer is melted by irradiation with the laser light.
12. 18
  Dependent← claim 1
  The method according to claim 1, wherein the epitaxial substrate is bonded to the conductive substrate using a conductive adhesive agent.
13. 19
  Dependent← claim 1
  The method according to claim 1, wherein conductive substrate is performed by pressure-bonding.
14. 20
  Dependent← claim 1MoW
  The method according to claim 1, wherein the tungsten, or an alloy thereof. the bonding of the epitaxial substrate to the conductive substrate includes molybdenum,

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

gallium nitride-based semiconductor electronic device

conductive substrateconductive substrate

gallium nitride-based semiconductorsemiconductor region

Al₂O₃support

field plate electrode structure on GaN semiconductor

field_plate_electrodefield plate electrode

insulating_filminsulating film

Materials

Materials described outside the worked examples.

gallium nitride-based semiconductor

Semiconductor Layer

conductive substrate

Substrate

Why these are connected

Related documents with shared materials, methods, properties, or citations.

METHOD FOR FABRICATING GALLIUM NITRIDE BASED SEMICONDUCTOR ELECTRONIC DEVICE | Matter42 Literature