GAN BASED LIGHT EMITTERS WITH BAND-EDGE ALIGNED CARRIER BLOCKING LAYERS

Ashmeet K. Samal

Patent

Atlas literature

Patent

US 8,143,614

GAN BASED LIGHT EMITTERS WITH BAND-EDGE ALIGNED CARRIER BLOCKING LAYERS

Ashmeet K. Samal

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

6 independent · 17 dependent

1
Independentnitride semiconductor (quantum well layer)nitride semiconductor (barrier layer)Sb-containing nitride electron blocking layernitride semiconductor (waveguide layer)nitride semiconductor light processing device with Sb-containing electron blocking layer
A nitride semiconductor light processing device formed of a hexagonal or cubic crystal system, comprising: a substrate; a light emitting layer comprising a quantum well structure including quantum well layers and barrier layers laminated alternately; at least one c. electron blocking layer er-hole bleeking-4 aye r, sandwiched in between a ﬁrst waveguide layer and a light emitting layer; wherein said light emitting layer and said earﬁer electron blocking layer togethe r are sandwiched in between tw o the ﬁrst waveguide layer[[s]] and a second waveguide layer; a nd wherein one or more of said quantum well layers is formed-o f comprises a nitride semiconductor material; and wherein one or more of said barrier layers is-frmed-of comprises a nitride semiconductor material; a nd wherein the said c arrier bloceking laye r is f orm ed of l ayer cmrsn wherein said electron blocking layer is formed of a layer containing Sb and a plurality of group III and V elements;-Page 2 of 13- Application No. 12/427,757 In Response to the Oﬃce Action dated Response dated wherein the molar fraction of Sb is more than 0.01% and less than 35% of the total group V elements in said electron blocking la y er; and wherein the valence band edge of said electron blocking layer is. partially or fully, aligned with a valence band edge of either said barrier layer or said waveguide layer. wherein thsaid element s e added to the a block layer to help align, eithe r fully o r pa rt ially, one of the band edges of the carr- ier bl oc king layer with o ne of the band edges of ba r rie r or wavegnide laye r.
1. 2
  Dependent← claim 1nitride semiconductor light processing device with Sb-containing electron blocking layer
  The device of claim 1, wherein the light processing device is constructed to form one of: (a) a light emitting device; (a) a light receiving device; (c-) a light sensing device; and (4) a light modulating device.
2. 3
  Dependent← claim 1GaNInGaNInAlGaNnitride semiconductor light processing device with Sb-containing electron blocking layer
  The device of claim 1, wherein the quantum well layers comprise[[s]] one of GaN or InGaN or InA l GaN[[;]].
3. 4
  Dependent← claim 1GaNInGaNAlGaNInAlGaNInAlGaNAsInAlGaNPnitride semiconductor light processing device with Sb-containing electron blocking layer
  The device of claim 1, wherein the barrier layer comprises at least one of GaN, er InGaN, ei AlGaN, er InAlGaN, ef InAlGaNAs, er InA l GaNP, and of InA I GaNSb[[;]].
4. 6
  Dependent← claim 1As-containing nitride electron blocking layernitride semiconductor light processing device with Sb-containing electron blocking layer
  The device of claim 1, wherein the said electron blocking layer is formed of a layer further containing As; wherein the molar fraction of As is more than 0.01% and less than 50% of t he total group V elements in this layer; and wherein the a valence band edge of As -e ent in ing said electron blocking layer is, partially or fully, aligned with a valence band edge of ene either said barrier la y er or said waveguide layer.
5. 8
  Dependent← claim 1As-P-Sb-containing nitride electron blocking layernitride semiconductor light processing device with Sb-containing electron blocking layer
  The device of claim 1, wherein the said electron blocking layer is formed of a layer containing a combination of As, P and Sb; wherein the molar fraction of the said combination is more than 0.01% and less than 61% of t h e total group V elements in t h is said electron blocking layer; and wherein the valence band edge of electron blocking layer is, partially or fully, aligned with a valence band edge of e ne either the barrier la y er or the waveguide layer.
6. 10
  Dependent← claim 1nitride semiconductor light processing device with Sb-containing electron blocking layer
  The device of claim 1, wherein said light emitting layer includes at least one and a maximum of 12 said quantum well layers and wherein said light emitting layer includes at least zero and a maximum of 13 said barrier layers.
7. 11
  Dependent← claim 1GaNAl₂O₃SiCnitride semiconductor light processing device with Sb-containing electron blocking layer
  The device of claim 1, wherein said substrate is formed of GaN or Sapphire or SiC.
8. 12
  Dependent← claim 1nitride semiconductor light processing device with Sb-containing electron blocking layer
  The device of claim 1, wherein the electron blocking layer comprises a there-is plurality of electron er-ho le blocking layers atnd comprising at least one of elements P, As, and Sb iinluded in said one or
9. 14
  Dependent← claim 1nitride semiconductor light processing device with Sb-containing electron blocking layer
  The device of claim 1, wherein each of said one or more quantum well layers has a thickness of more than 0.4 nm and less than 20 nm, and each of said one or more barrier layers has a thickness of more than 0.4 nm and less than 20 nm.
10. 15
  Dependent← claim 1nitride semiconductor light processing device with Sb-containing electron blocking layer
  The device of claim 1, wherein further-comprising: a n type nitride scmiconductor layer e.g. ﬁrst waveguide layer, situated c l o se r to said subst r ate and in co nta c t with eithe r: hole bl oc king laye r or light emitig yef- and the ﬁrst waveguide layer comprises a p-type nitride semiconductor layer eg. situated farther from said substrate and in contact with eithe r at least one of said electron blocking layer and said barrier layer Of light emit t ing layef, a n d wherein each waveguide layer having a band-gap larger than that of the quantum well layer.
11. 16
  Dependent← claim 1nitride semiconductor light processing device with Sb-containing electron blocking layer
  The device of claim 1, further comprising; a n-type semiconductor layer containing Al e.g. ﬁrst claddin g layer in contact with said ﬁrst waveguide layer[[,]]; and a p-type semiconductor layer containing Al eg in contact with said second waveguide layer, wherein each cladding layer ha vin g comprises a band-gap larger than that of the waveguide layers.
5
Independent
canceled
7
Independent
canceled
9
Independent
canceled
17
IndependentP-containing nitride electron blocking layernitride semiconductor light processing device with P-containing electron blocking layer
A nitride semiconductor light processing device formed of a hexagonal or cubic crystal system, comprising: a substrate; a light emitting layer comprising a quantum well structure including quantum well layers and barrier layers laminated alternately; at least one electron blocking layer sandwiched in between a ﬁrst waveguide layer and a light emitting layer; wherein said light emitting layer and said electron blocking layer are sandwiched in between the ﬁrst waveguide layer and a second waveguide layer; wherein one or more of said quantum well layers comprises a nitride semiconductor material; wherein one or more of said barrier layers comprises a nitride semiconductor material; wherein said electron blocking layer is formed of a layer containing P and a plurality of group III and V elements; wherein the molar fraction of P is more than 0.01% and less than 60% of the total group V elements in said electron blocking layer; and wherein a valence band edge of said electron blocking layer is, partially or fully, aligned with a valence band edge of one barrier or waveguide layer
1. 18
  Dependent← claim 17nitride semiconductor light processing device with P-containing electron blocking layer
  The device of claim 17, wherein the electron blocking layer comprises a plurality of electron blocking layers comprising at least one of elements P, As, and Sb.
20
IndependentIn-containing nitride hole blocking layernitride semiconductor light processing device with In-containing hole blocking layer
A nitride semiconductor light processing device formed of a hexagonal or cubic crystal system, comprising: a substrate; a light emitting layer comprising a quantum well structure including quantum well layers and barrier layers laminated alternately; at least one hole blocking layer sandwiched in between a second waveguide layer and a light emitting layer; wherein said light emitting layer and said hole blocking layer are sandwiched in between the ﬁrst waveguide layer and a second waveguide layer; wherein one or more of said quantum well layers comprises a nitride semiconductor material; wherein one or more of said barrier layers comprises a nitride semiconductor material; wherein said hole blocking layer is formed of a layer containing In and a plurality of group III and V elements; wherein the molar fraction of In is more than 0.01% and less than 60% of the total group III elements in said electron blocking layer; and wherein the conduction band edge of said hole blocking layer is, partially or fully, aligned with a valence band edge of either the barrier layer or the waveguide layer.
1. 21
  Dependent← claim 20In-containing nitride hole blocking layernitride semiconductor light processing device with In-containing hole blocking layer
  The device of claim 20, wherein the hole blocking layer comprises a plurality hole blocking layers comprising In.
2. 23
  Dependent← claim 20nitride semiconductor light processing device with In-containing hole blocking layer
  The device of claim 20, wherein: the second waveguide layer comprises a n-type nitride semiconductor layer situated closer to said substrate and in contact with said hole blocking layer.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

nitride semiconductor light processing device with Sb-containing electron blocking layer

nitride semiconductor (waveguide layer)second waveguide layer

nitride semiconductor (barrier layer)barrier layer

nitride semiconductor (quantum well layer)light emitting layer quantum well

Sb-containing nitride electron blocking layerelectron blocking layer

nitride semiconductor (waveguide layer)first waveguide layer

Materials

Materials described outside the worked examples.

nitride semiconductor (quantum well layer)

Quantum Well Layer

nitride semiconductor (barrier layer)

Barrier Layer

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Thickness	≤ 20 nm	—
Thickness

Why these are connected

Related documents with shared materials, methods, properties, or citations.

GAN BASED LIGHT EMITTERS WITH BAND-EDGE ALIGNED CARRIER BLOCKING LAYERS | Matter42 Literature