Patent
US 9,029,916GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
Jae-hoon LEE
US
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US 9,029,916Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a sectional view of a gallium nitride (GaN) based semiconductor device according to an embodiment of the present invention;
FIG. 2 is a diagram showing crystalline structures of a GaN layer having N-face polarity and a GaN layer having Ga-face polarity;
FIG. 3 is a diagram showing positions of 2-dimensional electron gas (2DEG) layers according to surface polarities of GaN-based heterojunction structures;
FIG. 4 is a sectional view of a GaN-based semiconductor device according to another embodiment of the present invention;
FIGS. 5A through 5H are sectional views showing a method of manufacturing a GaN-based semiconductor device according to an embodiment of the present invention;
FIGS. 6A through 6C are sectional views showing parts of a method of manufacturing a GaN-based semiconductor device according to another embodiment of the …
FIG. 7 is a sectional view of a GaN-based semiconductor device according to another embodiment of the present invention; and
FIGS. 8A and 8 B are sectional views showing a method of manufacturing a GaN- based semiconductor device according to another embodiment of the present …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Docket No.: 050665-0439 Amendment dated First Preliminary Amendment AMENDMENTS TO THE CLAIMS This listing of claims will replace all prior versions and listings of claims in the application Listin g of Claims: Claims 1-8 canceled
A gallium nitride (GaN) based semiconductor device comprising: a heat dissipation substrate; a GaN-based multi-layer, which is a rr anged on the heat dissipation substrate, has N-face polarity, and includes a 2-dimensional electron gas (2DEG); a cathode which forms Schottky contact with a first region of the GaN-based multi-layer; and an anode which forms ohmic contact with a second region of the GaN-based multi-layer.
The GaN-based semiconductor device of claim 9, wherein the heat dissipation substrate comprises a material having a higher thermal conductivity than a sapphire substrate.
The GaN-based semiconductor device of claim comprises: an A lxGaix N layer (0.1 < x < 0.6) an Al yGaiy N layer (0 < y < 0.01) arranged on
The GaN-based semiconductor device of claim comprises a highly resistive GaN-based material substrate and the A lxGaix N layer.
The GaN-based semiconductor device of claim material layer has a resistance greater than or equal
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based Schottky diode
GaN-based HFET (heterostructure field effect transistor)
Materials described outside the worked examples.
GaN-based multi-layer (N-face polarity)
2-dimensional electron gas
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Sheet Resistance | ≥ 1000000000 Ohm/sq | highly resistive GaN-based material layer |
Thickness | 20–50 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,029,916Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a sectional view of a gallium nitride (GaN) based semiconductor device according to an embodiment of the present invention;
FIG. 2 is a diagram showing crystalline structures of a GaN layer having N-face polarity and a GaN layer having Ga-face polarity;
FIG. 3 is a diagram showing positions of 2-dimensional electron gas (2DEG) layers according to surface polarities of GaN-based heterojunction structures;
FIG. 4 is a sectional view of a GaN-based semiconductor device according to another embodiment of the present invention;
FIGS. 5A through 5H are sectional views showing a method of manufacturing a GaN-based semiconductor device according to an embodiment of the present invention;
FIGS. 6A through 6C are sectional views showing parts of a method of manufacturing a GaN-based semiconductor device according to another embodiment of the …
FIG. 7 is a sectional view of a GaN-based semiconductor device according to another embodiment of the present invention; and
FIGS. 8A and 8 B are sectional views showing a method of manufacturing a GaN- based semiconductor device according to another embodiment of the present …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Docket No.: 050665-0439 Amendment dated First Preliminary Amendment AMENDMENTS TO THE CLAIMS This listing of claims will replace all prior versions and listings of claims in the application Listin g of Claims: Claims 1-8 canceled
A gallium nitride (GaN) based semiconductor device comprising: a heat dissipation substrate; a GaN-based multi-layer, which is a rr anged on the heat dissipation substrate, has N-face polarity, and includes a 2-dimensional electron gas (2DEG); a cathode which forms Schottky contact with a first region of the GaN-based multi-layer; and an anode which forms ohmic contact with a second region of the GaN-based multi-layer.
The GaN-based semiconductor device of claim 9, wherein the heat dissipation substrate comprises a material having a higher thermal conductivity than a sapphire substrate.
The GaN-based semiconductor device of claim comprises: an A lxGaix N layer (0.1 < x < 0.6) an Al yGaiy N layer (0 < y < 0.01) arranged on
The GaN-based semiconductor device of claim comprises a highly resistive GaN-based material substrate and the A lxGaix N layer.
The GaN-based semiconductor device of claim material layer has a resistance greater than or equal
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based Schottky diode
GaN-based HFET (heterostructure field effect transistor)
Materials described outside the worked examples.
GaN-based multi-layer (N-face polarity)
2-dimensional electron gas
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Sheet Resistance | ≥ 1000000000 Ohm/sq | highly resistive GaN-based material layer |
Thickness | 20–50 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,029,916Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a sectional view of a gallium nitride (GaN) based semiconductor device according to an embodiment of the present invention;
FIG. 2 is a diagram showing crystalline structures of a GaN layer having N-face polarity and a GaN layer having Ga-face polarity;
FIG. 3 is a diagram showing positions of 2-dimensional electron gas (2DEG) layers according to surface polarities of GaN-based heterojunction structures;
FIG. 4 is a sectional view of a GaN-based semiconductor device according to another embodiment of the present invention;
FIGS. 5A through 5H are sectional views showing a method of manufacturing a GaN-based semiconductor device according to an embodiment of the present invention;
FIGS. 6A through 6C are sectional views showing parts of a method of manufacturing a GaN-based semiconductor device according to another embodiment of the …
FIG. 7 is a sectional view of a GaN-based semiconductor device according to another embodiment of the present invention; and
FIGS. 8A and 8 B are sectional views showing a method of manufacturing a GaN- based semiconductor device according to another embodiment of the present …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Docket No.: 050665-0439 Amendment dated First Preliminary Amendment AMENDMENTS TO THE CLAIMS This listing of claims will replace all prior versions and listings of claims in the application Listin g of Claims: Claims 1-8 canceled
A gallium nitride (GaN) based semiconductor device comprising: a heat dissipation substrate; a GaN-based multi-layer, which is a rr anged on the heat dissipation substrate, has N-face polarity, and includes a 2-dimensional electron gas (2DEG); a cathode which forms Schottky contact with a first region of the GaN-based multi-layer; and an anode which forms ohmic contact with a second region of the GaN-based multi-layer.
The GaN-based semiconductor device of claim 9, wherein the heat dissipation substrate comprises a material having a higher thermal conductivity than a sapphire substrate.
The GaN-based semiconductor device of claim comprises: an A lxGaix N layer (0.1 < x < 0.6) an Al yGaiy N layer (0 < y < 0.01) arranged on
The GaN-based semiconductor device of claim comprises a highly resistive GaN-based material substrate and the A lxGaix N layer.
The GaN-based semiconductor device of claim material layer has a resistance greater than or equal
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based Schottky diode
GaN-based HFET (heterostructure field effect transistor)
Materials described outside the worked examples.
GaN-based multi-layer (N-face polarity)
2-dimensional electron gas
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Sheet Resistance | ≥ 1000000000 Ohm/sq | highly resistive GaN-based material layer |
Thickness | 20–50 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,029,916Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a sectional view of a gallium nitride (GaN) based semiconductor device according to an embodiment of the present invention;
FIG. 2 is a diagram showing crystalline structures of a GaN layer having N-face polarity and a GaN layer having Ga-face polarity;
FIG. 3 is a diagram showing positions of 2-dimensional electron gas (2DEG) layers according to surface polarities of GaN-based heterojunction structures;
FIG. 4 is a sectional view of a GaN-based semiconductor device according to another embodiment of the present invention;
FIGS. 5A through 5H are sectional views showing a method of manufacturing a GaN-based semiconductor device according to an embodiment of the present invention;
FIGS. 6A through 6C are sectional views showing parts of a method of manufacturing a GaN-based semiconductor device according to another embodiment of the …
FIG. 7 is a sectional view of a GaN-based semiconductor device according to another embodiment of the present invention; and
FIGS. 8A and 8 B are sectional views showing a method of manufacturing a GaN- based semiconductor device according to another embodiment of the present …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Docket No.: 050665-0439 Amendment dated First Preliminary Amendment AMENDMENTS TO THE CLAIMS This listing of claims will replace all prior versions and listings of claims in the application Listin g of Claims: Claims 1-8 canceled
A gallium nitride (GaN) based semiconductor device comprising: a heat dissipation substrate; a GaN-based multi-layer, which is a rr anged on the heat dissipation substrate, has N-face polarity, and includes a 2-dimensional electron gas (2DEG); a cathode which forms Schottky contact with a first region of the GaN-based multi-layer; and an anode which forms ohmic contact with a second region of the GaN-based multi-layer.
The GaN-based semiconductor device of claim 9, wherein the heat dissipation substrate comprises a material having a higher thermal conductivity than a sapphire substrate.
The GaN-based semiconductor device of claim comprises: an A lxGaix N layer (0.1 < x < 0.6) an Al yGaiy N layer (0 < y < 0.01) arranged on
The GaN-based semiconductor device of claim comprises a highly resistive GaN-based material substrate and the A lxGaix N layer.
The GaN-based semiconductor device of claim material layer has a resistance greater than or equal
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based Schottky diode
GaN-based HFET (heterostructure field effect transistor)
Materials described outside the worked examples.
GaN-based multi-layer (N-face polarity)
2-dimensional electron gas
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Sheet Resistance | ≥ 1000000000 Ohm/sq | highly resistive GaN-based material layer |
Thickness | 20–50 nm |
Related documents with shared materials, methods, properties, or citations.
heat dissipation substrate (higher thermal conductivity than sapphire)
amorphous AlN substrate
AlN
Si substrate
Si
Ge substrate
Ge
amorphous SiC substrate
SiC
ceramic substrate
AlxGa₁-xN layer (0.1 < x < 0.6)
AlxGa₁-xN
AlyGa₁-yN layer (0 < y < 0.01)
AlyGa₁-yN
highly resistive GaN-based material layer
sapphire substrate
| — |
Thickness | 10–500 nm | — |
Temperature | 900–950 °C | — |
heat dissipation substrate (higher thermal conductivity than sapphire)
amorphous AlN substrate
AlN
Si substrate
Si
Ge substrate
Ge
amorphous SiC substrate
SiC
ceramic substrate
AlxGa₁-xN layer (0.1 < x < 0.6)
AlxGa₁-xN
AlyGa₁-yN layer (0 < y < 0.01)
AlyGa₁-yN
highly resistive GaN-based material layer
sapphire substrate
| — |
Thickness | 10–500 nm | — |
Temperature | 900–950 °C | — |
heat dissipation substrate (higher thermal conductivity than sapphire)
amorphous AlN substrate
AlN
Si substrate
Si
Ge substrate
Ge
amorphous SiC substrate
SiC
ceramic substrate
AlxGa₁-xN layer (0.1 < x < 0.6)
AlxGa₁-xN
AlyGa₁-yN layer (0 < y < 0.01)
AlyGa₁-yN
highly resistive GaN-based material layer
sapphire substrate
| — |
Thickness | 10–500 nm | — |
Temperature | 900–950 °C | — |
heat dissipation substrate (higher thermal conductivity than sapphire)
amorphous AlN substrate
AlN
Si substrate
Si
Ge substrate
Ge
amorphous SiC substrate
SiC
ceramic substrate
AlxGa₁-xN layer (0.1 < x < 0.6)
AlxGa₁-xN
AlyGa₁-yN layer (0 < y < 0.01)
AlyGa₁-yN
highly resistive GaN-based material layer
sapphire substrate
| — |
Thickness | 10–500 nm | — |
Temperature | 900–950 °C | — |