Patent
US 10,971,615HIGH POWER PERFORMANCE GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR WITH LEDGES AND FIELD PLATES
Gengming TAO
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,971,615Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a cross-sectional view of an example high electron mobility transistor (HEMT). [0008]
FIG. 2 illustrates a cross-sectional view of an example structure of a gallium nitride (GaN)-based HEMT with ledges, in accordance with certain aspects of the …
FIG. 3 illustrates a cross-sectional view of an example structure of another GaN-based HEMT with ledges, in accordance with certain aspects of the present …
FIG. 4 illustrates a cross-sectional view of an example structure of a GaN- based HEMT with ledges and a field plate, in accordance with certain aspects of the …
FIG. 5 illustrates a cross-sectional view of an example structure of a GaN- based metal- oxide-semiconductor (MOS) HEMT with ledges and a field plate, in …
FIG. 6 is a flow diagram of example operations for fabricating a GaN-based HEMT with ledge(s), in accordance with certain aspects of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A high electron mobility transistor (HEMT) comprising: a substrate; a buffer layer disposed above the substrate; a gallium nitride (GaN) layer disposed above the buffer layer; an aluminum gallium nitride (AlGaN) layer disposed above the GaN layer; a source electrode, a gate electrode, and a drain electrode disposed above the AlGaN layer; one or more n-doped protuberances disposed on the A l GaN layer and disposed between at least one of: the gate electrode and the drain electrode; or the source electrode and the gate electrode, wherein each of the one or more n-doped protuberances is separated from the gate electrode, the drain electrode, and the source electrode; and a metal plate disposed above the one or more n-doped protuberances and separate from the gate electrode, wherein the one or more n-doped protuberances comprise two or more n-doped protuberances having one or more trenches therebetween, and wherein the metal plate comprises one or more protrusions extending into the one or more trenches between the two or more n-doped protuberances. Currently amended
The H EMT of claim 1, further comprising a passivation layer disposed between the metal plate and the one or more n-doped protuberances. Previously presented
The H EMT of claim 1, wherein the metal plate is electrically coupled to the source electrode. Previously presented
The H EMT of claim 1, wherein the gate electrode is further disposed directly adjacent to the AlGaN layer. Original
The H EMT of claim 1, wherein a level of doping within the one or more n-doped protuberances is uniform or vertically non-uniform. Original
The HEMT of claim 1, wherein the one or more n-doped protuberances comprise two or more n-doped protuberances. Withdrawn
The H EMT of claim 1, further comprising a passivation layer disposed above the one or more n-doped protuberances. Withdrawn
The HEMT of claim 1, further comprising a dielectric layer disposed between the gate electrode and the AlGaN layer. Withdrawn
The H EMT of claim 1, wherein the one or more n-doped protuberances comprise at least one of gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (Al GaN), or aluminum nitride (A l N). Original
Canceled
Canceled
14-25. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based High Electron Mobility Transistor (HEMT)
Materials described outside the worked examples.
gallium nitride
GaN
aluminum gallium nitride
AlGaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 illustrates a cross-sectional view of an example high electron mobility transistor (HEMT). [0008]
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,971,615Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a cross-sectional view of an example high electron mobility transistor (HEMT). [0008]
FIG. 2 illustrates a cross-sectional view of an example structure of a gallium nitride (GaN)-based HEMT with ledges, in accordance with certain aspects of the …
FIG. 3 illustrates a cross-sectional view of an example structure of another GaN-based HEMT with ledges, in accordance with certain aspects of the present …
FIG. 4 illustrates a cross-sectional view of an example structure of a GaN- based HEMT with ledges and a field plate, in accordance with certain aspects of the …
FIG. 5 illustrates a cross-sectional view of an example structure of a GaN- based metal- oxide-semiconductor (MOS) HEMT with ledges and a field plate, in …
FIG. 6 is a flow diagram of example operations for fabricating a GaN-based HEMT with ledge(s), in accordance with certain aspects of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A high electron mobility transistor (HEMT) comprising: a substrate; a buffer layer disposed above the substrate; a gallium nitride (GaN) layer disposed above the buffer layer; an aluminum gallium nitride (AlGaN) layer disposed above the GaN layer; a source electrode, a gate electrode, and a drain electrode disposed above the AlGaN layer; one or more n-doped protuberances disposed on the A l GaN layer and disposed between at least one of: the gate electrode and the drain electrode; or the source electrode and the gate electrode, wherein each of the one or more n-doped protuberances is separated from the gate electrode, the drain electrode, and the source electrode; and a metal plate disposed above the one or more n-doped protuberances and separate from the gate electrode, wherein the one or more n-doped protuberances comprise two or more n-doped protuberances having one or more trenches therebetween, and wherein the metal plate comprises one or more protrusions extending into the one or more trenches between the two or more n-doped protuberances. Currently amended
The H EMT of claim 1, further comprising a passivation layer disposed between the metal plate and the one or more n-doped protuberances. Previously presented
The H EMT of claim 1, wherein the metal plate is electrically coupled to the source electrode. Previously presented
The H EMT of claim 1, wherein the gate electrode is further disposed directly adjacent to the AlGaN layer. Original
The H EMT of claim 1, wherein a level of doping within the one or more n-doped protuberances is uniform or vertically non-uniform. Original
The HEMT of claim 1, wherein the one or more n-doped protuberances comprise two or more n-doped protuberances. Withdrawn
The H EMT of claim 1, further comprising a passivation layer disposed above the one or more n-doped protuberances. Withdrawn
The HEMT of claim 1, further comprising a dielectric layer disposed between the gate electrode and the AlGaN layer. Withdrawn
The H EMT of claim 1, wherein the one or more n-doped protuberances comprise at least one of gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (Al GaN), or aluminum nitride (A l N). Original
Canceled
Canceled
14-25. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based High Electron Mobility Transistor (HEMT)
Materials described outside the worked examples.
gallium nitride
GaN
aluminum gallium nitride
AlGaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 illustrates a cross-sectional view of an example high electron mobility transistor (HEMT). [0008]
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,971,615Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a cross-sectional view of an example high electron mobility transistor (HEMT). [0008]
FIG. 2 illustrates a cross-sectional view of an example structure of a gallium nitride (GaN)-based HEMT with ledges, in accordance with certain aspects of the …
FIG. 3 illustrates a cross-sectional view of an example structure of another GaN-based HEMT with ledges, in accordance with certain aspects of the present …
FIG. 4 illustrates a cross-sectional view of an example structure of a GaN- based HEMT with ledges and a field plate, in accordance with certain aspects of the …
FIG. 5 illustrates a cross-sectional view of an example structure of a GaN- based metal- oxide-semiconductor (MOS) HEMT with ledges and a field plate, in …
FIG. 6 is a flow diagram of example operations for fabricating a GaN-based HEMT with ledge(s), in accordance with certain aspects of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A high electron mobility transistor (HEMT) comprising: a substrate; a buffer layer disposed above the substrate; a gallium nitride (GaN) layer disposed above the buffer layer; an aluminum gallium nitride (AlGaN) layer disposed above the GaN layer; a source electrode, a gate electrode, and a drain electrode disposed above the AlGaN layer; one or more n-doped protuberances disposed on the A l GaN layer and disposed between at least one of: the gate electrode and the drain electrode; or the source electrode and the gate electrode, wherein each of the one or more n-doped protuberances is separated from the gate electrode, the drain electrode, and the source electrode; and a metal plate disposed above the one or more n-doped protuberances and separate from the gate electrode, wherein the one or more n-doped protuberances comprise two or more n-doped protuberances having one or more trenches therebetween, and wherein the metal plate comprises one or more protrusions extending into the one or more trenches between the two or more n-doped protuberances. Currently amended
The H EMT of claim 1, further comprising a passivation layer disposed between the metal plate and the one or more n-doped protuberances. Previously presented
The H EMT of claim 1, wherein the metal plate is electrically coupled to the source electrode. Previously presented
The H EMT of claim 1, wherein the gate electrode is further disposed directly adjacent to the AlGaN layer. Original
The H EMT of claim 1, wherein a level of doping within the one or more n-doped protuberances is uniform or vertically non-uniform. Original
The HEMT of claim 1, wherein the one or more n-doped protuberances comprise two or more n-doped protuberances. Withdrawn
The H EMT of claim 1, further comprising a passivation layer disposed above the one or more n-doped protuberances. Withdrawn
The HEMT of claim 1, further comprising a dielectric layer disposed between the gate electrode and the AlGaN layer. Withdrawn
The H EMT of claim 1, wherein the one or more n-doped protuberances comprise at least one of gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (Al GaN), or aluminum nitride (A l N). Original
Canceled
Canceled
14-25. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based High Electron Mobility Transistor (HEMT)
Materials described outside the worked examples.
gallium nitride
GaN
aluminum gallium nitride
AlGaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 illustrates a cross-sectional view of an example high electron mobility transistor (HEMT). [0008]
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,971,615Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a cross-sectional view of an example high electron mobility transistor (HEMT). [0008]
FIG. 2 illustrates a cross-sectional view of an example structure of a gallium nitride (GaN)-based HEMT with ledges, in accordance with certain aspects of the …
FIG. 3 illustrates a cross-sectional view of an example structure of another GaN-based HEMT with ledges, in accordance with certain aspects of the present …
FIG. 4 illustrates a cross-sectional view of an example structure of a GaN- based HEMT with ledges and a field plate, in accordance with certain aspects of the …
FIG. 5 illustrates a cross-sectional view of an example structure of a GaN- based metal- oxide-semiconductor (MOS) HEMT with ledges and a field plate, in …
FIG. 6 is a flow diagram of example operations for fabricating a GaN-based HEMT with ledge(s), in accordance with certain aspects of the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A high electron mobility transistor (HEMT) comprising: a substrate; a buffer layer disposed above the substrate; a gallium nitride (GaN) layer disposed above the buffer layer; an aluminum gallium nitride (AlGaN) layer disposed above the GaN layer; a source electrode, a gate electrode, and a drain electrode disposed above the AlGaN layer; one or more n-doped protuberances disposed on the A l GaN layer and disposed between at least one of: the gate electrode and the drain electrode; or the source electrode and the gate electrode, wherein each of the one or more n-doped protuberances is separated from the gate electrode, the drain electrode, and the source electrode; and a metal plate disposed above the one or more n-doped protuberances and separate from the gate electrode, wherein the one or more n-doped protuberances comprise two or more n-doped protuberances having one or more trenches therebetween, and wherein the metal plate comprises one or more protrusions extending into the one or more trenches between the two or more n-doped protuberances. Currently amended
The H EMT of claim 1, further comprising a passivation layer disposed between the metal plate and the one or more n-doped protuberances. Previously presented
The H EMT of claim 1, wherein the metal plate is electrically coupled to the source electrode. Previously presented
The H EMT of claim 1, wherein the gate electrode is further disposed directly adjacent to the AlGaN layer. Original
The H EMT of claim 1, wherein a level of doping within the one or more n-doped protuberances is uniform or vertically non-uniform. Original
The HEMT of claim 1, wherein the one or more n-doped protuberances comprise two or more n-doped protuberances. Withdrawn
The H EMT of claim 1, further comprising a passivation layer disposed above the one or more n-doped protuberances. Withdrawn
The HEMT of claim 1, further comprising a dielectric layer disposed between the gate electrode and the AlGaN layer. Withdrawn
The H EMT of claim 1, wherein the one or more n-doped protuberances comprise at least one of gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (Al GaN), or aluminum nitride (A l N). Original
Canceled
Canceled
14-25. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based High Electron Mobility Transistor (HEMT)
Materials described outside the worked examples.
gallium nitride
GaN
aluminum gallium nitride
AlGaN
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 illustrates a cross-sectional view of an example high electron mobility transistor (HEMT). [0008]
Related documents with shared materials, methods, properties, or citations.
n-doped protuberance
silicon nitride
Si₃N₄
indium gallium nitride
InGaN
aluminum nitride
AlN
silicon
Si
silicon carbide
SiC
aluminum oxide
Al₂O₃
n-doped protuberance
silicon nitride
Si₃N₄
indium gallium nitride
InGaN
aluminum nitride
AlN
silicon
Si
silicon carbide
SiC
aluminum oxide
Al₂O₃
n-doped protuberance
silicon nitride
Si₃N₄
indium gallium nitride
InGaN
aluminum nitride
AlN
silicon
Si
silicon carbide
SiC
aluminum oxide
Al₂O₃
n-doped protuberance
silicon nitride
Si₃N₄
indium gallium nitride
InGaN
aluminum nitride
AlN
silicon
Si
silicon carbide
SiC
aluminum oxide
Al₂O₃