Patent
US 8,809,086METHOD FOR FABRICATING A SEMICONDUCTOR COMPONENT BASED ON GaN
Stefan BADER
US
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Patent
Atlas literature
Patent
US 8,809,086Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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A thin-film light emitting-diode comprising: a carrier comprising germanium; GaN-based layers comprising an active layer sequence for emitting radiation; a reflector configured to reflect the radiation emitted by the active layer sequence; and a contact surface configured to contact-connect the active layer sequence, wherein the reflector is arranged between the carrier and the GaN-based layers; and wherein the contact surface is applied to the GaN-based layers on a side of the GaN-based layers which faces away from the ca rri er.
The thin-film light emitting-diode according to claim 36, wherein the carrier consists of germanium.
The thin-film light emitting-diode according to claim 36, wherein the reflector comprises alumi ni um.
The thin-film light emitting-diode according to claim 36, wherein the reflector comprises silver.
The thin-film light emitting-diode according to claim 36, wherein an outer surface of the GaN-based layers is roughened.
The thin-film light emitting-diode according to claim 36, wherein a contact layer is arranged between the reflector and the GaN-based layers. 42. The thin-film light emitting-diode according to claim 41, wherein the contact layer comprises platinum. 2 LEGAL\ 1 733] 362\ I
The thin-film light emitting-diode according to claim 36, further comprising a bonding solder arranged between the reflector and the GaN-based layers.
The thin-film light emitting-diode according to claim 36, wherein the GaN-based layers are structured into individual semiconductor layer stacks. 45. The thin-film light emitting-diode according to claim 36, wherein the carrier comprises or consists of molybdenum. 3 LE GAL\ 1 7331362\ 1
Layer stacks claimed or described, ordered top of device to substrate.
thin-film light emitting diode
Materials described outside the worked examples.
germanium
Ge
GaN-based layers
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,809,086Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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A thin-film light emitting-diode comprising: a carrier comprising germanium; GaN-based layers comprising an active layer sequence for emitting radiation; a reflector configured to reflect the radiation emitted by the active layer sequence; and a contact surface configured to contact-connect the active layer sequence, wherein the reflector is arranged between the carrier and the GaN-based layers; and wherein the contact surface is applied to the GaN-based layers on a side of the GaN-based layers which faces away from the ca rri er.
The thin-film light emitting-diode according to claim 36, wherein the carrier consists of germanium.
The thin-film light emitting-diode according to claim 36, wherein the reflector comprises alumi ni um.
The thin-film light emitting-diode according to claim 36, wherein the reflector comprises silver.
The thin-film light emitting-diode according to claim 36, wherein an outer surface of the GaN-based layers is roughened.
The thin-film light emitting-diode according to claim 36, wherein a contact layer is arranged between the reflector and the GaN-based layers. 42. The thin-film light emitting-diode according to claim 41, wherein the contact layer comprises platinum. 2 LEGAL\ 1 733] 362\ I
The thin-film light emitting-diode according to claim 36, further comprising a bonding solder arranged between the reflector and the GaN-based layers.
The thin-film light emitting-diode according to claim 36, wherein the GaN-based layers are structured into individual semiconductor layer stacks. 45. The thin-film light emitting-diode according to claim 36, wherein the carrier comprises or consists of molybdenum. 3 LE GAL\ 1 7331362\ 1
Layer stacks claimed or described, ordered top of device to substrate.
thin-film light emitting diode
Materials described outside the worked examples.
germanium
Ge
GaN-based layers
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,809,086Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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A thin-film light emitting-diode comprising: a carrier comprising germanium; GaN-based layers comprising an active layer sequence for emitting radiation; a reflector configured to reflect the radiation emitted by the active layer sequence; and a contact surface configured to contact-connect the active layer sequence, wherein the reflector is arranged between the carrier and the GaN-based layers; and wherein the contact surface is applied to the GaN-based layers on a side of the GaN-based layers which faces away from the ca rri er.
The thin-film light emitting-diode according to claim 36, wherein the carrier consists of germanium.
The thin-film light emitting-diode according to claim 36, wherein the reflector comprises alumi ni um.
The thin-film light emitting-diode according to claim 36, wherein the reflector comprises silver.
The thin-film light emitting-diode according to claim 36, wherein an outer surface of the GaN-based layers is roughened.
The thin-film light emitting-diode according to claim 36, wherein a contact layer is arranged between the reflector and the GaN-based layers. 42. The thin-film light emitting-diode according to claim 41, wherein the contact layer comprises platinum. 2 LEGAL\ 1 733] 362\ I
The thin-film light emitting-diode according to claim 36, further comprising a bonding solder arranged between the reflector and the GaN-based layers.
The thin-film light emitting-diode according to claim 36, wherein the GaN-based layers are structured into individual semiconductor layer stacks. 45. The thin-film light emitting-diode according to claim 36, wherein the carrier comprises or consists of molybdenum. 3 LE GAL\ 1 7331362\ 1
Layer stacks claimed or described, ordered top of device to substrate.
thin-film light emitting diode
Materials described outside the worked examples.
germanium
Ge
GaN-based layers
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,809,086Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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A thin-film light emitting-diode comprising: a carrier comprising germanium; GaN-based layers comprising an active layer sequence for emitting radiation; a reflector configured to reflect the radiation emitted by the active layer sequence; and a contact surface configured to contact-connect the active layer sequence, wherein the reflector is arranged between the carrier and the GaN-based layers; and wherein the contact surface is applied to the GaN-based layers on a side of the GaN-based layers which faces away from the ca rri er.
The thin-film light emitting-diode according to claim 36, wherein the carrier consists of germanium.
The thin-film light emitting-diode according to claim 36, wherein the reflector comprises alumi ni um.
The thin-film light emitting-diode according to claim 36, wherein the reflector comprises silver.
The thin-film light emitting-diode according to claim 36, wherein an outer surface of the GaN-based layers is roughened.
The thin-film light emitting-diode according to claim 36, wherein a contact layer is arranged between the reflector and the GaN-based layers. 42. The thin-film light emitting-diode according to claim 41, wherein the contact layer comprises platinum. 2 LEGAL\ 1 733] 362\ I
The thin-film light emitting-diode according to claim 36, further comprising a bonding solder arranged between the reflector and the GaN-based layers.
The thin-film light emitting-diode according to claim 36, wherein the GaN-based layers are structured into individual semiconductor layer stacks. 45. The thin-film light emitting-diode according to claim 36, wherein the carrier comprises or consists of molybdenum. 3 LE GAL\ 1 7331362\ 1
Layer stacks claimed or described, ordered top of device to substrate.
thin-film light emitting diode
Materials described outside the worked examples.
germanium
Ge
GaN-based layers
Related documents with shared materials, methods, properties, or citations.
GaN-based layers (active layer sequence)
aluminium
Al
silver
Ag
platinum
Pt
molybdenum
Mo
SiC
silicon
Si
sapphire
AlN
MgO
AlGaN
silicon oxide
SiO₂
GaN-based layers (active layer sequence)
aluminium
Al
silver
Ag
platinum
Pt
molybdenum
Mo
SiC
silicon
Si
sapphire
AlN
MgO
AlGaN
silicon oxide
SiO₂
GaN-based layers (active layer sequence)
aluminium
Al
silver
Ag
platinum
Pt
molybdenum
Mo
SiC
silicon
Si
sapphire
AlN
MgO
AlGaN
silicon oxide
SiO₂
GaN-based layers (active layer sequence)
aluminium
Al
silver
Ag
platinum
Pt
molybdenum
Mo
SiC
silicon
Si
sapphire
AlN
MgO
AlGaN
silicon oxide
SiO₂