Patent
US 10,312,405SYSTEMS AND METHODS FOR PREPARING GaN AND RELATED MATERIALS FOR MICRO ASSEMBLY
Christopher Bower
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,312,405Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart of an example method for preparing released GaN from silicon substrates;
FIG. 2 is a flowchart of an example method for preparing released GaN from sapphire substrates via an intermediate stamp;
FIG. 3 is a flowchart of a method for preparing released GaN from sapphire substrates via an intermediate substrate;
FIG. 4 is a table listing examples of materials and devices for micro assembly, their native substrates, and absorbing layers that can be used in various …
FIG. 5J. This approach is particularly well suited for forming printable devices from GaN grown epitaxially on sapphire whereby the first substrate is removed …
FIG. 6 illustrates a step for forming printable objects from bulk wafers. The features and advantages of the present disclosure will become more apparent from …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-14. Canceled
Canceled
A method of preparing printable materials for micro assembly from a native device substrate using an intermediate substrate having a controlled tackiness, the method comprising: depositing one or more materials on the native device substrate, thereby forming an epitaxial material; forming devices with the epitaxial material on the native device substrate; forming electrically conductive protrusions on each of the devices; delineating releasable structures comprising the devices in the epitaxial material, thereby partially exposing the device substrate; forming anchoring structures and tethering structures such that the releasable structures are connected to the substrate by the anchoring structures and tethering structures; temporarily bonding the devices to the intermediate substrate and performing a laser-lift off process, thereby separating the devices from the native device substrate and thereby inverting the devices for micro assembly, wherein: the controlled tackiness of the intermediate substrate is configured so that a transfer element can remove the materials from the intermediate substrate for micro assembly, and the native substrate is transparent to laser illumination that is absorbed strongly by an absorbing layer on the native substrate so that upon exposure to the laser illumination the absorbing layer at least partially decomposes or otherwise forms an interface that can initiate separation between the native substrate and the devices for micro assembly; at least partially completing the formation or delineation of devices on the intermediate substrate; releasing the devices from the intermediate substrate by removal of at least a portion of a selectively removable layer positioned between at least a portion of the intermediate substrate and at least a portion of the devices, thereby forming printable micro assemble-able devices from the native substrate via the intermediate substrate; and transferring the released materials for micro assembly on the intermediate substrate to the transfer element, thereby presenting the devices for micro assembly in an inverted configuration, the transfer element also having controlled tackiness such that the transfer element can remove the devices for micro assembly from the intermediate substrate[[and]]; and micro assembling the evices onto a destination substrate using the transfer element. Currently amended
The method of claim 15, wherein the intermediate substrate comprises a stamp. Previously presented
The method of claim 15, wherein the intermediate substrate comprises a conformable elastomer having controlled tackiness. Previously presented
The method of claim 15, wherein the anchoring structures and tethering structures are formed in the epitaxial material. Previously presented
The method of claim 15, wherein the anchoring and tethering structures are formed from non-epitaxial material. Previously presented
The method of claim 15, wherein the transfer element comprises an elastomer stamp. Previously presented
The method of claim 15, comprising performing thermal treatment to temporarily bond the devices to the intermediate substrate to form [[the]]a bonded pair of substrates. Currently amended
The method of claim 15, wherein the tackiness of the intermediate substrate is controlled by pressure or temperature. Previously presented
The method of claim 15, wherein the tackiness of the intermediate substrate is formed by temporary collapse of topographical features or viscoelastic rate- dependent adhesion effects, thereby forming a transient tackiness. Previously presented
16-17. Canceled
Canceled
Canceled
Canceled
28-46. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
printable micro-assembleable device (LED/transistor/diode)
stamp (intermediate substrate)
No layer stack recorded.
Materials described outside the worked examples.
epitaxial material (GaN and related)
native device substrate (transparent to laser illumination)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5J. This approach is particularly well suited for forming printable devices from GaN grown epitaxially on sapphire whereby the first substrate is removed …
Related documents with shared materials, methods, properties, or citations.
FORMING METHOD OF GALLIUM NITRIDE SYSTEM COMPOUND SEMICONDUCTOR LAYER, TRANSFER METHOD OF THE SAME, AND SUBSTRATE STRUCTURE WITH THE SAME BONDED THERETO
INTEGRATION OF GALLIUM NITRIDE LEDS WITH ALUMINUM GALLIUM NITRIDE/GALLIUM NITRIDE DEVICES ON SILICON SUBSTRATES FOR AC LEDS
Patent
Atlas literature
Patent
US 10,312,405Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart of an example method for preparing released GaN from silicon substrates;
FIG. 2 is a flowchart of an example method for preparing released GaN from sapphire substrates via an intermediate stamp;
FIG. 3 is a flowchart of a method for preparing released GaN from sapphire substrates via an intermediate substrate;
FIG. 4 is a table listing examples of materials and devices for micro assembly, their native substrates, and absorbing layers that can be used in various …
FIG. 5J. This approach is particularly well suited for forming printable devices from GaN grown epitaxially on sapphire whereby the first substrate is removed …
FIG. 6 illustrates a step for forming printable objects from bulk wafers. The features and advantages of the present disclosure will become more apparent from …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-14. Canceled
Canceled
A method of preparing printable materials for micro assembly from a native device substrate using an intermediate substrate having a controlled tackiness, the method comprising: depositing one or more materials on the native device substrate, thereby forming an epitaxial material; forming devices with the epitaxial material on the native device substrate; forming electrically conductive protrusions on each of the devices; delineating releasable structures comprising the devices in the epitaxial material, thereby partially exposing the device substrate; forming anchoring structures and tethering structures such that the releasable structures are connected to the substrate by the anchoring structures and tethering structures; temporarily bonding the devices to the intermediate substrate and performing a laser-lift off process, thereby separating the devices from the native device substrate and thereby inverting the devices for micro assembly, wherein: the controlled tackiness of the intermediate substrate is configured so that a transfer element can remove the materials from the intermediate substrate for micro assembly, and the native substrate is transparent to laser illumination that is absorbed strongly by an absorbing layer on the native substrate so that upon exposure to the laser illumination the absorbing layer at least partially decomposes or otherwise forms an interface that can initiate separation between the native substrate and the devices for micro assembly; at least partially completing the formation or delineation of devices on the intermediate substrate; releasing the devices from the intermediate substrate by removal of at least a portion of a selectively removable layer positioned between at least a portion of the intermediate substrate and at least a portion of the devices, thereby forming printable micro assemble-able devices from the native substrate via the intermediate substrate; and transferring the released materials for micro assembly on the intermediate substrate to the transfer element, thereby presenting the devices for micro assembly in an inverted configuration, the transfer element also having controlled tackiness such that the transfer element can remove the devices for micro assembly from the intermediate substrate[[and]]; and micro assembling the evices onto a destination substrate using the transfer element. Currently amended
The method of claim 15, wherein the intermediate substrate comprises a stamp. Previously presented
The method of claim 15, wherein the intermediate substrate comprises a conformable elastomer having controlled tackiness. Previously presented
The method of claim 15, wherein the anchoring structures and tethering structures are formed in the epitaxial material. Previously presented
The method of claim 15, wherein the anchoring and tethering structures are formed from non-epitaxial material. Previously presented
The method of claim 15, wherein the transfer element comprises an elastomer stamp. Previously presented
The method of claim 15, comprising performing thermal treatment to temporarily bond the devices to the intermediate substrate to form [[the]]a bonded pair of substrates. Currently amended
The method of claim 15, wherein the tackiness of the intermediate substrate is controlled by pressure or temperature. Previously presented
The method of claim 15, wherein the tackiness of the intermediate substrate is formed by temporary collapse of topographical features or viscoelastic rate- dependent adhesion effects, thereby forming a transient tackiness. Previously presented
16-17. Canceled
Canceled
Canceled
Canceled
28-46. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
printable micro-assembleable device (LED/transistor/diode)
stamp (intermediate substrate)
No layer stack recorded.
Materials described outside the worked examples.
epitaxial material (GaN and related)
native device substrate (transparent to laser illumination)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5J. This approach is particularly well suited for forming printable devices from GaN grown epitaxially on sapphire whereby the first substrate is removed …
Related documents with shared materials, methods, properties, or citations.
FORMING METHOD OF GALLIUM NITRIDE SYSTEM COMPOUND SEMICONDUCTOR LAYER, TRANSFER METHOD OF THE SAME, AND SUBSTRATE STRUCTURE WITH THE SAME BONDED THERETO
INTEGRATION OF GALLIUM NITRIDE LEDS WITH ALUMINUM GALLIUM NITRIDE/GALLIUM NITRIDE DEVICES ON SILICON SUBSTRATES FOR AC LEDS
Patent
Atlas literature
Patent
US 10,312,405Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart of an example method for preparing released GaN from silicon substrates;
FIG. 2 is a flowchart of an example method for preparing released GaN from sapphire substrates via an intermediate stamp;
FIG. 3 is a flowchart of a method for preparing released GaN from sapphire substrates via an intermediate substrate;
FIG. 4 is a table listing examples of materials and devices for micro assembly, their native substrates, and absorbing layers that can be used in various …
FIG. 5J. This approach is particularly well suited for forming printable devices from GaN grown epitaxially on sapphire whereby the first substrate is removed …
FIG. 6 illustrates a step for forming printable objects from bulk wafers. The features and advantages of the present disclosure will become more apparent from …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-14. Canceled
Canceled
A method of preparing printable materials for micro assembly from a native device substrate using an intermediate substrate having a controlled tackiness, the method comprising: depositing one or more materials on the native device substrate, thereby forming an epitaxial material; forming devices with the epitaxial material on the native device substrate; forming electrically conductive protrusions on each of the devices; delineating releasable structures comprising the devices in the epitaxial material, thereby partially exposing the device substrate; forming anchoring structures and tethering structures such that the releasable structures are connected to the substrate by the anchoring structures and tethering structures; temporarily bonding the devices to the intermediate substrate and performing a laser-lift off process, thereby separating the devices from the native device substrate and thereby inverting the devices for micro assembly, wherein: the controlled tackiness of the intermediate substrate is configured so that a transfer element can remove the materials from the intermediate substrate for micro assembly, and the native substrate is transparent to laser illumination that is absorbed strongly by an absorbing layer on the native substrate so that upon exposure to the laser illumination the absorbing layer at least partially decomposes or otherwise forms an interface that can initiate separation between the native substrate and the devices for micro assembly; at least partially completing the formation or delineation of devices on the intermediate substrate; releasing the devices from the intermediate substrate by removal of at least a portion of a selectively removable layer positioned between at least a portion of the intermediate substrate and at least a portion of the devices, thereby forming printable micro assemble-able devices from the native substrate via the intermediate substrate; and transferring the released materials for micro assembly on the intermediate substrate to the transfer element, thereby presenting the devices for micro assembly in an inverted configuration, the transfer element also having controlled tackiness such that the transfer element can remove the devices for micro assembly from the intermediate substrate[[and]]; and micro assembling the evices onto a destination substrate using the transfer element. Currently amended
The method of claim 15, wherein the intermediate substrate comprises a stamp. Previously presented
The method of claim 15, wherein the intermediate substrate comprises a conformable elastomer having controlled tackiness. Previously presented
The method of claim 15, wherein the anchoring structures and tethering structures are formed in the epitaxial material. Previously presented
The method of claim 15, wherein the anchoring and tethering structures are formed from non-epitaxial material. Previously presented
The method of claim 15, wherein the transfer element comprises an elastomer stamp. Previously presented
The method of claim 15, comprising performing thermal treatment to temporarily bond the devices to the intermediate substrate to form [[the]]a bonded pair of substrates. Currently amended
The method of claim 15, wherein the tackiness of the intermediate substrate is controlled by pressure or temperature. Previously presented
The method of claim 15, wherein the tackiness of the intermediate substrate is formed by temporary collapse of topographical features or viscoelastic rate- dependent adhesion effects, thereby forming a transient tackiness. Previously presented
16-17. Canceled
Canceled
Canceled
Canceled
28-46. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
printable micro-assembleable device (LED/transistor/diode)
stamp (intermediate substrate)
No layer stack recorded.
Materials described outside the worked examples.
epitaxial material (GaN and related)
native device substrate (transparent to laser illumination)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5J. This approach is particularly well suited for forming printable devices from GaN grown epitaxially on sapphire whereby the first substrate is removed …
Related documents with shared materials, methods, properties, or citations.
FORMING METHOD OF GALLIUM NITRIDE SYSTEM COMPOUND SEMICONDUCTOR LAYER, TRANSFER METHOD OF THE SAME, AND SUBSTRATE STRUCTURE WITH THE SAME BONDED THERETO
INTEGRATION OF GALLIUM NITRIDE LEDS WITH ALUMINUM GALLIUM NITRIDE/GALLIUM NITRIDE DEVICES ON SILICON SUBSTRATES FOR AC LEDS
Patent
Atlas literature
Patent
US 10,312,405Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart of an example method for preparing released GaN from silicon substrates;
FIG. 2 is a flowchart of an example method for preparing released GaN from sapphire substrates via an intermediate stamp;
FIG. 3 is a flowchart of a method for preparing released GaN from sapphire substrates via an intermediate substrate;
FIG. 4 is a table listing examples of materials and devices for micro assembly, their native substrates, and absorbing layers that can be used in various …
FIG. 5J. This approach is particularly well suited for forming printable devices from GaN grown epitaxially on sapphire whereby the first substrate is removed …
FIG. 6 illustrates a step for forming printable objects from bulk wafers. The features and advantages of the present disclosure will become more apparent from …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-14. Canceled
Canceled
A method of preparing printable materials for micro assembly from a native device substrate using an intermediate substrate having a controlled tackiness, the method comprising: depositing one or more materials on the native device substrate, thereby forming an epitaxial material; forming devices with the epitaxial material on the native device substrate; forming electrically conductive protrusions on each of the devices; delineating releasable structures comprising the devices in the epitaxial material, thereby partially exposing the device substrate; forming anchoring structures and tethering structures such that the releasable structures are connected to the substrate by the anchoring structures and tethering structures; temporarily bonding the devices to the intermediate substrate and performing a laser-lift off process, thereby separating the devices from the native device substrate and thereby inverting the devices for micro assembly, wherein: the controlled tackiness of the intermediate substrate is configured so that a transfer element can remove the materials from the intermediate substrate for micro assembly, and the native substrate is transparent to laser illumination that is absorbed strongly by an absorbing layer on the native substrate so that upon exposure to the laser illumination the absorbing layer at least partially decomposes or otherwise forms an interface that can initiate separation between the native substrate and the devices for micro assembly; at least partially completing the formation or delineation of devices on the intermediate substrate; releasing the devices from the intermediate substrate by removal of at least a portion of a selectively removable layer positioned between at least a portion of the intermediate substrate and at least a portion of the devices, thereby forming printable micro assemble-able devices from the native substrate via the intermediate substrate; and transferring the released materials for micro assembly on the intermediate substrate to the transfer element, thereby presenting the devices for micro assembly in an inverted configuration, the transfer element also having controlled tackiness such that the transfer element can remove the devices for micro assembly from the intermediate substrate[[and]]; and micro assembling the evices onto a destination substrate using the transfer element. Currently amended
The method of claim 15, wherein the intermediate substrate comprises a stamp. Previously presented
The method of claim 15, wherein the intermediate substrate comprises a conformable elastomer having controlled tackiness. Previously presented
The method of claim 15, wherein the anchoring structures and tethering structures are formed in the epitaxial material. Previously presented
The method of claim 15, wherein the anchoring and tethering structures are formed from non-epitaxial material. Previously presented
The method of claim 15, wherein the transfer element comprises an elastomer stamp. Previously presented
The method of claim 15, comprising performing thermal treatment to temporarily bond the devices to the intermediate substrate to form [[the]]a bonded pair of substrates. Currently amended
The method of claim 15, wherein the tackiness of the intermediate substrate is controlled by pressure or temperature. Previously presented
The method of claim 15, wherein the tackiness of the intermediate substrate is formed by temporary collapse of topographical features or viscoelastic rate- dependent adhesion effects, thereby forming a transient tackiness. Previously presented
16-17. Canceled
Canceled
Canceled
Canceled
28-46. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
printable micro-assembleable device (LED/transistor/diode)
stamp (intermediate substrate)
No layer stack recorded.
Materials described outside the worked examples.
epitaxial material (GaN and related)
native device substrate (transparent to laser illumination)
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 5J. This approach is particularly well suited for forming printable devices from GaN grown epitaxially on sapphire whereby the first substrate is removed …
Related documents with shared materials, methods, properties, or citations.
FORMING METHOD OF GALLIUM NITRIDE SYSTEM COMPOUND SEMICONDUCTOR LAYER, TRANSFER METHOD OF THE SAME, AND SUBSTRATE STRUCTURE WITH THE SAME BONDED THERETO
INTEGRATION OF GALLIUM NITRIDE LEDS WITH ALUMINUM GALLIUM NITRIDE/GALLIUM NITRIDE DEVICES ON SILICON SUBSTRATES FOR AC LEDS
absorbing layer on native substrate
conformable elastomer
elastomer stamp
GaN
AlGaN
InGaN
InGaAlN
SiN
sapphire substrate
silicon carbide substrate
SiC
silicon substrate Si(111)
Si
silicon nitride
Si₃N₄
silicon oxide
SiO₂
absorbing layer on native substrate
conformable elastomer
elastomer stamp
GaN
AlGaN
InGaN
InGaAlN
SiN
sapphire substrate
silicon carbide substrate
SiC
silicon substrate Si(111)
Si
silicon nitride
Si₃N₄
silicon oxide
SiO₂
absorbing layer on native substrate
conformable elastomer
elastomer stamp
GaN
AlGaN
InGaN
InGaAlN
SiN
sapphire substrate
silicon carbide substrate
SiC
silicon substrate Si(111)
Si
silicon nitride
Si₃N₄
silicon oxide
SiO₂
absorbing layer on native substrate
conformable elastomer
elastomer stamp
GaN
AlGaN
InGaN
InGaAlN
SiN
sapphire substrate
silicon carbide substrate
SiC
silicon substrate Si(111)
Si
silicon nitride
Si₃N₄
silicon oxide
SiO₂