Patent
Atlas literature
Patent
US 12,482,700 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart of a method of manufacturing N-face polar GaN-based composite substrate according to the first embodiment of the present disclosure;
FIGS. 2 and 3 are schematic views illustrating interme- diate structures corresponding to the process in
FIGS. 3 and 4, after the wafer bonding process, the carrier board 20 is peeled off, such that the exposed surface of the GaN-based material layer 12 is the …
FIG. 4 is a cross-sectional structural diagram of an N-face polar GaN-based composite substrate according to the first embodiment of the present disclosure;
FIG. 5 is a cross-sectional structural diagram of an N-face polar GaN-based composite substrate according to the sec- ond embodiment of the present disclosure;
FIG. 6 is a cross-sectional structural diagram of an N-face polar GaN-based composite substrate according to the third embodiment of the present disclosure. To …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing an N-face polar GaN-based composite substrate, comprising: providing a semiconductor substrate; forming an insulating layer on the semiconductor substrate; providing a GaN-based material layer grown on a carrier board, wherein a surface of the GaN-based material layer far away from the carrier board is a Ga-face; performing wafer-bonding for the insulating layer with the Ga-face of the GaN-based material layer; and after wafer-bonding, peeling off the carrier board, such that an exposed surface of the GaN-based material layer is the N-face; wherein the insulating layer comprises a nitrogen ele-ment, the insulating layer is a multi-layer structure, and the multi-layer structure comprises a silicon dioxide layer and an aluminum nitride layer from bottom to top, or a silicon nitride layer and an aluminum nitride layer from bottom to top.
The method according to claim 1, wherein the insulat-ing layer is formed on each of surfaces of the semiconductor substrate.
The method according to claim 1, wherein a material of the GaN-based material layer comprises at least one of GaN, AlGaN, InGaN or AlInGaN.
The method according to claim 1, wherein a material of the semiconductor substrate comprises sapphire, silicon carbide, silicon, GaN, AlN or diamond.
The method according to claim 1, wherein a thickness of the insulating layer is 1 nm to 100 nm. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
N-face polar GaN-based composite substrate
N-face polar GaN-based device (HEMT)
Materials described outside the worked examples.
silicon dioxide
SiO₂
aluminum nitride
AlN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
insulating layer thickness | 1–100 | insulating layer (multi-layer, nitrogen-containing) |
Thickness | 1–100 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,482,700 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart of a method of manufacturing N-face polar GaN-based composite substrate according to the first embodiment of the present disclosure;
FIGS. 2 and 3 are schematic views illustrating interme- diate structures corresponding to the process in
FIGS. 3 and 4, after the wafer bonding process, the carrier board 20 is peeled off, such that the exposed surface of the GaN-based material layer 12 is the …
FIG. 4 is a cross-sectional structural diagram of an N-face polar GaN-based composite substrate according to the first embodiment of the present disclosure;
FIG. 5 is a cross-sectional structural diagram of an N-face polar GaN-based composite substrate according to the sec- ond embodiment of the present disclosure;
FIG. 6 is a cross-sectional structural diagram of an N-face polar GaN-based composite substrate according to the third embodiment of the present disclosure. To …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing an N-face polar GaN-based composite substrate, comprising: providing a semiconductor substrate; forming an insulating layer on the semiconductor substrate; providing a GaN-based material layer grown on a carrier board, wherein a surface of the GaN-based material layer far away from the carrier board is a Ga-face; performing wafer-bonding for the insulating layer with the Ga-face of the GaN-based material layer; and after wafer-bonding, peeling off the carrier board, such that an exposed surface of the GaN-based material layer is the N-face; wherein the insulating layer comprises a nitrogen ele-ment, the insulating layer is a multi-layer structure, and the multi-layer structure comprises a silicon dioxide layer and an aluminum nitride layer from bottom to top, or a silicon nitride layer and an aluminum nitride layer from bottom to top.
The method according to claim 1, wherein the insulat-ing layer is formed on each of surfaces of the semiconductor substrate.
The method according to claim 1, wherein a material of the GaN-based material layer comprises at least one of GaN, AlGaN, InGaN or AlInGaN.
The method according to claim 1, wherein a material of the semiconductor substrate comprises sapphire, silicon carbide, silicon, GaN, AlN or diamond.
The method according to claim 1, wherein a thickness of the insulating layer is 1 nm to 100 nm. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
N-face polar GaN-based composite substrate
N-face polar GaN-based device (HEMT)
Materials described outside the worked examples.
silicon dioxide
SiO₂
aluminum nitride
AlN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
insulating layer thickness | 1–100 | insulating layer (multi-layer, nitrogen-containing) |
Thickness | 1–100 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,482,700 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart of a method of manufacturing N-face polar GaN-based composite substrate according to the first embodiment of the present disclosure;
FIGS. 2 and 3 are schematic views illustrating interme- diate structures corresponding to the process in
FIGS. 3 and 4, after the wafer bonding process, the carrier board 20 is peeled off, such that the exposed surface of the GaN-based material layer 12 is the …
FIG. 4 is a cross-sectional structural diagram of an N-face polar GaN-based composite substrate according to the first embodiment of the present disclosure;
FIG. 5 is a cross-sectional structural diagram of an N-face polar GaN-based composite substrate according to the sec- ond embodiment of the present disclosure;
FIG. 6 is a cross-sectional structural diagram of an N-face polar GaN-based composite substrate according to the third embodiment of the present disclosure. To …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing an N-face polar GaN-based composite substrate, comprising: providing a semiconductor substrate; forming an insulating layer on the semiconductor substrate; providing a GaN-based material layer grown on a carrier board, wherein a surface of the GaN-based material layer far away from the carrier board is a Ga-face; performing wafer-bonding for the insulating layer with the Ga-face of the GaN-based material layer; and after wafer-bonding, peeling off the carrier board, such that an exposed surface of the GaN-based material layer is the N-face; wherein the insulating layer comprises a nitrogen ele-ment, the insulating layer is a multi-layer structure, and the multi-layer structure comprises a silicon dioxide layer and an aluminum nitride layer from bottom to top, or a silicon nitride layer and an aluminum nitride layer from bottom to top.
The method according to claim 1, wherein the insulat-ing layer is formed on each of surfaces of the semiconductor substrate.
The method according to claim 1, wherein a material of the GaN-based material layer comprises at least one of GaN, AlGaN, InGaN or AlInGaN.
The method according to claim 1, wherein a material of the semiconductor substrate comprises sapphire, silicon carbide, silicon, GaN, AlN or diamond.
The method according to claim 1, wherein a thickness of the insulating layer is 1 nm to 100 nm. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
N-face polar GaN-based composite substrate
N-face polar GaN-based device (HEMT)
Materials described outside the worked examples.
silicon dioxide
SiO₂
aluminum nitride
AlN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
insulating layer thickness | 1–100 | insulating layer (multi-layer, nitrogen-containing) |
Thickness | 1–100 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,482,700 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a flowchart of a method of manufacturing N-face polar GaN-based composite substrate according to the first embodiment of the present disclosure;
FIGS. 2 and 3 are schematic views illustrating interme- diate structures corresponding to the process in
FIGS. 3 and 4, after the wafer bonding process, the carrier board 20 is peeled off, such that the exposed surface of the GaN-based material layer 12 is the …
FIG. 4 is a cross-sectional structural diagram of an N-face polar GaN-based composite substrate according to the first embodiment of the present disclosure;
FIG. 5 is a cross-sectional structural diagram of an N-face polar GaN-based composite substrate according to the sec- ond embodiment of the present disclosure;
FIG. 6 is a cross-sectional structural diagram of an N-face polar GaN-based composite substrate according to the third embodiment of the present disclosure. To …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing an N-face polar GaN-based composite substrate, comprising: providing a semiconductor substrate; forming an insulating layer on the semiconductor substrate; providing a GaN-based material layer grown on a carrier board, wherein a surface of the GaN-based material layer far away from the carrier board is a Ga-face; performing wafer-bonding for the insulating layer with the Ga-face of the GaN-based material layer; and after wafer-bonding, peeling off the carrier board, such that an exposed surface of the GaN-based material layer is the N-face; wherein the insulating layer comprises a nitrogen ele-ment, the insulating layer is a multi-layer structure, and the multi-layer structure comprises a silicon dioxide layer and an aluminum nitride layer from bottom to top, or a silicon nitride layer and an aluminum nitride layer from bottom to top.
The method according to claim 1, wherein the insulat-ing layer is formed on each of surfaces of the semiconductor substrate.
The method according to claim 1, wherein a material of the GaN-based material layer comprises at least one of GaN, AlGaN, InGaN or AlInGaN.
The method according to claim 1, wherein a material of the semiconductor substrate comprises sapphire, silicon carbide, silicon, GaN, AlN or diamond.
The method according to claim 1, wherein a thickness of the insulating layer is 1 nm to 100 nm. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
N-face polar GaN-based composite substrate
N-face polar GaN-based device (HEMT)
Materials described outside the worked examples.
silicon dioxide
SiO₂
aluminum nitride
AlN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
insulating layer thickness | 1–100 | insulating layer (multi-layer, nitrogen-containing) |
Thickness | 1–100 nm |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
Related documents with shared materials, methods, properties, or citations.
silicon nitride
Si₃N₄
GaN-based material layer
insulating layer (multi-layer, nitrogen-containing)
GaN
AlGaN
InGaN
AlInGaN
sapphire
Al₂O₃
silicon carbide
SiC
silicon
Si
diamond
C
silicon oxynitride
SiON
| — |
Cited non-patent literature · 4
silicon nitride
Si₃N₄
GaN-based material layer
insulating layer (multi-layer, nitrogen-containing)
GaN
AlGaN
InGaN
AlInGaN
sapphire
Al₂O₃
silicon carbide
SiC
silicon
Si
diamond
C
silicon oxynitride
SiON
| — |
Cited non-patent literature · 4
silicon nitride
Si₃N₄
GaN-based material layer
insulating layer (multi-layer, nitrogen-containing)
GaN
AlGaN
InGaN
AlInGaN
sapphire
Al₂O₃
silicon carbide
SiC
silicon
Si
diamond
C
silicon oxynitride
SiON
| — |
Cited non-patent literature · 4
silicon nitride
Si₃N₄
GaN-based material layer
insulating layer (multi-layer, nitrogen-containing)
GaN
AlGaN
InGaN
AlInGaN
sapphire
Al₂O₃
silicon carbide
SiC
silicon
Si
diamond
C
silicon oxynitride
SiON
| — |
Cited non-patent literature · 4
