Patent
US 11,705,494 B2GALLIUM NITRIDE COMPONENT AND DRIVE CIRCUIT THEREOF
Boning Huang, Zhaozheng Hou, Qimeng Jiang
Huawei Technologies Co., Ltd., Shenzhen (CN)·Jul. 18, 2023·US
Copyright © 2026 Matter42. All rights reserved.
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Atlas literature
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US 11,705,494 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic structural diagram of a current gallium nitride component;
FIG. 2 is a schematic structural diagram of a gallium nitride component according to an embodiment of this application;
FIG. 3 is a schematic structural diagram and an equivalent circuit diagram of a gallium nitride component with a Schottky gate;
FIG. 4 is a schematic structural diagram and an equivalent circuit diagram of a gallium nitride component with an ohmic gate;
FIG. 5 is an equivalent circuit diagram of the gallium nitride component shown in
FIG. 6 is a schematic diagram of a layout manner of gate metals of a gallium nitride component according to an embodiment of this application;
FIG. 7 is a schematic diagram of another layout manner of gate metals of a gallium nitride component according to 10 an embodiment of this application;
FIG. 8 is a schematic diagram of still another layout manner of gate metals of a gallium nitride component according to an embodiment of this application;
FIG. 9 is a schematic diagram of a drive circuit according 15 to an embodiment of this application;
FIG. 10 is a diagram of a driving time sequence of a drive circuit according to an embodiment of this application;
FIG. 11 is a schematic structural diagram of another gallium nitride component according to an embodiment of 20 this application; and
FIG. 12 is a schematic diagram of driving logic of a gallium nitride component according to an embodiment of this application.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride component, comprising: a substrate; a gallium nitride (GaN) buffer layer formed on the substrate; an aluminum gallium nitride (AlGaN) barrier layer formed on the GaN buffer layer; and a source, a drain, and a gate formed on the AlGaN barrier layer; wherein the gate comprises a P-doped gallium nitride (P—GaN) cap layer formed on the AlGaN barrier layer, and a first gate metal and a second gate metal formed on the P—GaN cap layer, wherein a Schottky contact is formed between the first gate metal and the P—GaN cap layer, and an ohmic contact is formed between the second gate metal and the P—GaN cap layer, wherein the first gate metal is not in contact with the second gate metal.
The gallium nitride component according to claim 1, wherein the first gate metal and the second gate metal are disposed in parallel at intervals along a direction perpen-dicular to a gate width direction of the gate.
The gallium nitride component according to claim 1, wherein the gate comprises a plurality of first gate metals and a plurality of second gate metals.
A gallium nitride component, comprising: a substrate; a gallium nitride (GaN) buffer layer formed on the substrate; an aluminum gallium nitride (AlGaN) barrier layer formed on the GaN buffer layer; and a source, a drain, and a gate formed on the AlGaN barrier layer; wherein: the gate comprises a P-doped gallium nitride (P—GaN) cap layer formed on the AlGaN barrier layer, and a first gate metal and a second gate metal formed on the P—GaN cap layer, wherein a Schottky contact is formed between the first gate metal and the P—GaN cap layer, and an ohmic contact is formed between the second gate metal and the P—GaN cap layer, the gallium nitride component further comprising a depletion-type high electron mobility transistor (HEMT); a source of the depletion-type HEMT is coupled to the first gate metal; a gate of the depletion-type HEMT is coupled to the source of the gallium nitride component; and a drain of the depletion-type HEMT is coupled to the second gate metal.
A drive circuit, comprising: a gate driver; and a gallium nitride component, the gallium nitride compo-nent comprising: a substrate; 5 a gallium nitride (GaN) buffer layer formed on the substrate; an aluminum gallium nitride (AlGaN) barrier layer formed on the GaN buffer layer; and a source, a drain, and a gate formed on the AlGaN barrier layer; wherein the gate comprises a P-doped gallium nitride (P—GaN) cap layer formed on the AlGaN barrier layer, and a first gate metal and a second gate metal formed on the P—GaN cap layer; 15 a Schottky contact is formed between the first gate metal and the P—GaN cap layer, and an ohmic contact is formed between the second gate metal and the P—GaN cap layer; and the first gate metal and the second gate metal of the gallium nitride component are coupled to a signal output end of the gate driver, and a gate driving resistor and a switch are connected in series between the second gate metal and the signal output end of the gate driver.
The drive circuit according to claim 8, wherein the first gate metal and the second gate metal are disposed in parallel at intervals along a direction perpendicular to a gate width direction of the gate.
The drive circuit according to claim 8, wherein the gate comprises a plurality of first gate metals and a plurality of second gate metals.
The drive circuit according to claim 8, wherein the switch is configured to open after a delay of preset duration when a rising edge of a driving signal of the gate driver arrives.
The drive circuit according to claim 8, wherein the switch is configured to close when a falling edge of a driving signal of the gate driver arrives. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
P-GaN gate GaN HEMT (normally-off) with hybrid Schottky/ohmic gate
depletion-type HEMT integrated with P-GaN gate GaN component
No layer stack recorded.
drive circuit with gate driver, GaN component, gate driving resistor, and switch
No layer stack recorded.
Materials described outside the worked examples.
gallium nitride buffer layer
GaN
aluminum gallium nitride barrier layer
AlGaN
P-doped gallium nitride cap layer
P-GaN
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
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Patent
Atlas literature
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US 11,705,494 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic structural diagram of a current gallium nitride component;
FIG. 2 is a schematic structural diagram of a gallium nitride component according to an embodiment of this application;
FIG. 3 is a schematic structural diagram and an equivalent circuit diagram of a gallium nitride component with a Schottky gate;
FIG. 4 is a schematic structural diagram and an equivalent circuit diagram of a gallium nitride component with an ohmic gate;
FIG. 5 is an equivalent circuit diagram of the gallium nitride component shown in
FIG. 6 is a schematic diagram of a layout manner of gate metals of a gallium nitride component according to an embodiment of this application;
FIG. 7 is a schematic diagram of another layout manner of gate metals of a gallium nitride component according to 10 an embodiment of this application;
FIG. 8 is a schematic diagram of still another layout manner of gate metals of a gallium nitride component according to an embodiment of this application;
FIG. 9 is a schematic diagram of a drive circuit according 15 to an embodiment of this application;
FIG. 10 is a diagram of a driving time sequence of a drive circuit according to an embodiment of this application;
FIG. 11 is a schematic structural diagram of another gallium nitride component according to an embodiment of 20 this application; and
FIG. 12 is a schematic diagram of driving logic of a gallium nitride component according to an embodiment of this application.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride component, comprising: a substrate; a gallium nitride (GaN) buffer layer formed on the substrate; an aluminum gallium nitride (AlGaN) barrier layer formed on the GaN buffer layer; and a source, a drain, and a gate formed on the AlGaN barrier layer; wherein the gate comprises a P-doped gallium nitride (P—GaN) cap layer formed on the AlGaN barrier layer, and a first gate metal and a second gate metal formed on the P—GaN cap layer, wherein a Schottky contact is formed between the first gate metal and the P—GaN cap layer, and an ohmic contact is formed between the second gate metal and the P—GaN cap layer, wherein the first gate metal is not in contact with the second gate metal.
The gallium nitride component according to claim 1, wherein the first gate metal and the second gate metal are disposed in parallel at intervals along a direction perpen-dicular to a gate width direction of the gate.
The gallium nitride component according to claim 1, wherein the gate comprises a plurality of first gate metals and a plurality of second gate metals.
A gallium nitride component, comprising: a substrate; a gallium nitride (GaN) buffer layer formed on the substrate; an aluminum gallium nitride (AlGaN) barrier layer formed on the GaN buffer layer; and a source, a drain, and a gate formed on the AlGaN barrier layer; wherein: the gate comprises a P-doped gallium nitride (P—GaN) cap layer formed on the AlGaN barrier layer, and a first gate metal and a second gate metal formed on the P—GaN cap layer, wherein a Schottky contact is formed between the first gate metal and the P—GaN cap layer, and an ohmic contact is formed between the second gate metal and the P—GaN cap layer, the gallium nitride component further comprising a depletion-type high electron mobility transistor (HEMT); a source of the depletion-type HEMT is coupled to the first gate metal; a gate of the depletion-type HEMT is coupled to the source of the gallium nitride component; and a drain of the depletion-type HEMT is coupled to the second gate metal.
A drive circuit, comprising: a gate driver; and a gallium nitride component, the gallium nitride compo-nent comprising: a substrate; 5 a gallium nitride (GaN) buffer layer formed on the substrate; an aluminum gallium nitride (AlGaN) barrier layer formed on the GaN buffer layer; and a source, a drain, and a gate formed on the AlGaN barrier layer; wherein the gate comprises a P-doped gallium nitride (P—GaN) cap layer formed on the AlGaN barrier layer, and a first gate metal and a second gate metal formed on the P—GaN cap layer; 15 a Schottky contact is formed between the first gate metal and the P—GaN cap layer, and an ohmic contact is formed between the second gate metal and the P—GaN cap layer; and the first gate metal and the second gate metal of the gallium nitride component are coupled to a signal output end of the gate driver, and a gate driving resistor and a switch are connected in series between the second gate metal and the signal output end of the gate driver.
The drive circuit according to claim 8, wherein the first gate metal and the second gate metal are disposed in parallel at intervals along a direction perpendicular to a gate width direction of the gate.
The drive circuit according to claim 8, wherein the gate comprises a plurality of first gate metals and a plurality of second gate metals.
The drive circuit according to claim 8, wherein the switch is configured to open after a delay of preset duration when a rising edge of a driving signal of the gate driver arrives.
The drive circuit according to claim 8, wherein the switch is configured to close when a falling edge of a driving signal of the gate driver arrives. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
P-GaN gate GaN HEMT (normally-off) with hybrid Schottky/ohmic gate
depletion-type HEMT integrated with P-GaN gate GaN component
No layer stack recorded.
drive circuit with gate driver, GaN component, gate driving resistor, and switch
No layer stack recorded.
Materials described outside the worked examples.
gallium nitride buffer layer
GaN
aluminum gallium nitride barrier layer
AlGaN
P-doped gallium nitride cap layer
P-GaN
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,705,494 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic structural diagram of a current gallium nitride component;
FIG. 2 is a schematic structural diagram of a gallium nitride component according to an embodiment of this application;
FIG. 3 is a schematic structural diagram and an equivalent circuit diagram of a gallium nitride component with a Schottky gate;
FIG. 4 is a schematic structural diagram and an equivalent circuit diagram of a gallium nitride component with an ohmic gate;
FIG. 5 is an equivalent circuit diagram of the gallium nitride component shown in
FIG. 6 is a schematic diagram of a layout manner of gate metals of a gallium nitride component according to an embodiment of this application;
FIG. 7 is a schematic diagram of another layout manner of gate metals of a gallium nitride component according to 10 an embodiment of this application;
FIG. 8 is a schematic diagram of still another layout manner of gate metals of a gallium nitride component according to an embodiment of this application;
FIG. 9 is a schematic diagram of a drive circuit according 15 to an embodiment of this application;
FIG. 10 is a diagram of a driving time sequence of a drive circuit according to an embodiment of this application;
FIG. 11 is a schematic structural diagram of another gallium nitride component according to an embodiment of 20 this application; and
FIG. 12 is a schematic diagram of driving logic of a gallium nitride component according to an embodiment of this application.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride component, comprising: a substrate; a gallium nitride (GaN) buffer layer formed on the substrate; an aluminum gallium nitride (AlGaN) barrier layer formed on the GaN buffer layer; and a source, a drain, and a gate formed on the AlGaN barrier layer; wherein the gate comprises a P-doped gallium nitride (P—GaN) cap layer formed on the AlGaN barrier layer, and a first gate metal and a second gate metal formed on the P—GaN cap layer, wherein a Schottky contact is formed between the first gate metal and the P—GaN cap layer, and an ohmic contact is formed between the second gate metal and the P—GaN cap layer, wherein the first gate metal is not in contact with the second gate metal.
The gallium nitride component according to claim 1, wherein the first gate metal and the second gate metal are disposed in parallel at intervals along a direction perpen-dicular to a gate width direction of the gate.
The gallium nitride component according to claim 1, wherein the gate comprises a plurality of first gate metals and a plurality of second gate metals.
A gallium nitride component, comprising: a substrate; a gallium nitride (GaN) buffer layer formed on the substrate; an aluminum gallium nitride (AlGaN) barrier layer formed on the GaN buffer layer; and a source, a drain, and a gate formed on the AlGaN barrier layer; wherein: the gate comprises a P-doped gallium nitride (P—GaN) cap layer formed on the AlGaN barrier layer, and a first gate metal and a second gate metal formed on the P—GaN cap layer, wherein a Schottky contact is formed between the first gate metal and the P—GaN cap layer, and an ohmic contact is formed between the second gate metal and the P—GaN cap layer, the gallium nitride component further comprising a depletion-type high electron mobility transistor (HEMT); a source of the depletion-type HEMT is coupled to the first gate metal; a gate of the depletion-type HEMT is coupled to the source of the gallium nitride component; and a drain of the depletion-type HEMT is coupled to the second gate metal.
A drive circuit, comprising: a gate driver; and a gallium nitride component, the gallium nitride compo-nent comprising: a substrate; 5 a gallium nitride (GaN) buffer layer formed on the substrate; an aluminum gallium nitride (AlGaN) barrier layer formed on the GaN buffer layer; and a source, a drain, and a gate formed on the AlGaN barrier layer; wherein the gate comprises a P-doped gallium nitride (P—GaN) cap layer formed on the AlGaN barrier layer, and a first gate metal and a second gate metal formed on the P—GaN cap layer; 15 a Schottky contact is formed between the first gate metal and the P—GaN cap layer, and an ohmic contact is formed between the second gate metal and the P—GaN cap layer; and the first gate metal and the second gate metal of the gallium nitride component are coupled to a signal output end of the gate driver, and a gate driving resistor and a switch are connected in series between the second gate metal and the signal output end of the gate driver.
The drive circuit according to claim 8, wherein the first gate metal and the second gate metal are disposed in parallel at intervals along a direction perpendicular to a gate width direction of the gate.
The drive circuit according to claim 8, wherein the gate comprises a plurality of first gate metals and a plurality of second gate metals.
The drive circuit according to claim 8, wherein the switch is configured to open after a delay of preset duration when a rising edge of a driving signal of the gate driver arrives.
The drive circuit according to claim 8, wherein the switch is configured to close when a falling edge of a driving signal of the gate driver arrives. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
P-GaN gate GaN HEMT (normally-off) with hybrid Schottky/ohmic gate
depletion-type HEMT integrated with P-GaN gate GaN component
No layer stack recorded.
drive circuit with gate driver, GaN component, gate driving resistor, and switch
No layer stack recorded.
Materials described outside the worked examples.
gallium nitride buffer layer
GaN
aluminum gallium nitride barrier layer
AlGaN
P-doped gallium nitride cap layer
P-GaN
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,705,494 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic structural diagram of a current gallium nitride component;
FIG. 2 is a schematic structural diagram of a gallium nitride component according to an embodiment of this application;
FIG. 3 is a schematic structural diagram and an equivalent circuit diagram of a gallium nitride component with a Schottky gate;
FIG. 4 is a schematic structural diagram and an equivalent circuit diagram of a gallium nitride component with an ohmic gate;
FIG. 5 is an equivalent circuit diagram of the gallium nitride component shown in
FIG. 6 is a schematic diagram of a layout manner of gate metals of a gallium nitride component according to an embodiment of this application;
FIG. 7 is a schematic diagram of another layout manner of gate metals of a gallium nitride component according to 10 an embodiment of this application;
FIG. 8 is a schematic diagram of still another layout manner of gate metals of a gallium nitride component according to an embodiment of this application;
FIG. 9 is a schematic diagram of a drive circuit according 15 to an embodiment of this application;
FIG. 10 is a diagram of a driving time sequence of a drive circuit according to an embodiment of this application;
FIG. 11 is a schematic structural diagram of another gallium nitride component according to an embodiment of 20 this application; and
FIG. 12 is a schematic diagram of driving logic of a gallium nitride component according to an embodiment of this application.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride component, comprising: a substrate; a gallium nitride (GaN) buffer layer formed on the substrate; an aluminum gallium nitride (AlGaN) barrier layer formed on the GaN buffer layer; and a source, a drain, and a gate formed on the AlGaN barrier layer; wherein the gate comprises a P-doped gallium nitride (P—GaN) cap layer formed on the AlGaN barrier layer, and a first gate metal and a second gate metal formed on the P—GaN cap layer, wherein a Schottky contact is formed between the first gate metal and the P—GaN cap layer, and an ohmic contact is formed between the second gate metal and the P—GaN cap layer, wherein the first gate metal is not in contact with the second gate metal.
The gallium nitride component according to claim 1, wherein the first gate metal and the second gate metal are disposed in parallel at intervals along a direction perpen-dicular to a gate width direction of the gate.
The gallium nitride component according to claim 1, wherein the gate comprises a plurality of first gate metals and a plurality of second gate metals.
A gallium nitride component, comprising: a substrate; a gallium nitride (GaN) buffer layer formed on the substrate; an aluminum gallium nitride (AlGaN) barrier layer formed on the GaN buffer layer; and a source, a drain, and a gate formed on the AlGaN barrier layer; wherein: the gate comprises a P-doped gallium nitride (P—GaN) cap layer formed on the AlGaN barrier layer, and a first gate metal and a second gate metal formed on the P—GaN cap layer, wherein a Schottky contact is formed between the first gate metal and the P—GaN cap layer, and an ohmic contact is formed between the second gate metal and the P—GaN cap layer, the gallium nitride component further comprising a depletion-type high electron mobility transistor (HEMT); a source of the depletion-type HEMT is coupled to the first gate metal; a gate of the depletion-type HEMT is coupled to the source of the gallium nitride component; and a drain of the depletion-type HEMT is coupled to the second gate metal.
A drive circuit, comprising: a gate driver; and a gallium nitride component, the gallium nitride compo-nent comprising: a substrate; 5 a gallium nitride (GaN) buffer layer formed on the substrate; an aluminum gallium nitride (AlGaN) barrier layer formed on the GaN buffer layer; and a source, a drain, and a gate formed on the AlGaN barrier layer; wherein the gate comprises a P-doped gallium nitride (P—GaN) cap layer formed on the AlGaN barrier layer, and a first gate metal and a second gate metal formed on the P—GaN cap layer; 15 a Schottky contact is formed between the first gate metal and the P—GaN cap layer, and an ohmic contact is formed between the second gate metal and the P—GaN cap layer; and the first gate metal and the second gate metal of the gallium nitride component are coupled to a signal output end of the gate driver, and a gate driving resistor and a switch are connected in series between the second gate metal and the signal output end of the gate driver.
The drive circuit according to claim 8, wherein the first gate metal and the second gate metal are disposed in parallel at intervals along a direction perpendicular to a gate width direction of the gate.
The drive circuit according to claim 8, wherein the gate comprises a plurality of first gate metals and a plurality of second gate metals.
The drive circuit according to claim 8, wherein the switch is configured to open after a delay of preset duration when a rising edge of a driving signal of the gate driver arrives.
The drive circuit according to claim 8, wherein the switch is configured to close when a falling edge of a driving signal of the gate driver arrives. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
P-GaN gate GaN HEMT (normally-off) with hybrid Schottky/ohmic gate
depletion-type HEMT integrated with P-GaN gate GaN component
No layer stack recorded.
drive circuit with gate driver, GaN component, gate driving resistor, and switch
No layer stack recorded.
Materials described outside the worked examples.
gallium nitride buffer layer
GaN
aluminum gallium nitride barrier layer
AlGaN
P-doped gallium nitride cap layer
P-GaN
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
Related documents with shared materials, methods, properties, or citations.
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