Patent
US 8,378,388SEMICONDUCTOR DEVICE
Mitsunori Yokoyama
US
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Patent
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US 8,378,388Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a semiconductor layer made of Fe-doped GaN; a first buffer layer that is provided on the semiconductor layer so as to contact an upper surface of the semiconductor layer and is made of A l N; [[and]] an operating layer that is provided on the first buffer layer and is made of a GaN-based semiconductor, wherein the semiconductor layer is a single layer, and, wherein the first buffer la y er has a thickness that is equal to or greater than 50 nm and is equal to or less than 300 nm.
The semiconductor device according to claim 1, wherein the semiconductor device is a HEM T or FET.
[[The]] A semiconductor device a, comprising: a semiconductor la y er made of Fe-doped GaN; a first buffer la y er that is provided on the semiconductor la y er so as to contact an upper surface of the semiconductor la v er and is made of A lN; an operating la y er that is provided on the first buffer la y er and is made of a GaN-based semiconductor, a second buffer layer that is provided on the first buffer layer and is made of A l N or A lXGa X N (0.4 < x < 1); [[and]] 2 Application No. 12/731,621 Docket No. 100420 an intermediate layer that is provided between the first and second buffer layers and is made of Al x1Iny1 Gai xiy1 N (x l + y l < 1) having an Al composition ratio smaller than Al composition ratios of the first and second buffer layers, wherein the semiconductor la y er is a single la y er, and the operating layer be -in g is provided on the second buffer layer.
The semiconductor device according to claim 2, wherein the second buffer layer includes multiple second buffer layers, and the intermediate layer includes multiple intermediate layers.
canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
Sample A consists of a SiC substrate, an AlN buffer layer (buffer layer 4), an Fe-doped GaN semiconductor layer 6 (thickness T1=630 nm), and an undoped GaN semiconductor layer 8 (thickness T2=780 nm) directly on top of layer 6. MOVPE was used for epitaxial growth. Fe doping concentration in layer 6 was 1.2e18–1.5e18 cm⁻³. Growth conditions: N₂ carrier gas, 100 torr pressure, 1050°C, NH₃ partial pressure 40 torr. SIMS analysis showed Fe concentration ~1e18 cm⁻³ in layer 6, with Fe entrapment in layer 8.
4 materials1 process step
Sample B consists of a SiC substrate, an AlN buffer layer (buffer layer 4), an Fe-doped GaN semiconductor layer 6, a first AlN buffer layer 10 (thickness T3=150 nm) contacting the upper surface of layer 6, and an undoped GaN semiconductor layer 8 (thickness T2=630 nm) on top of first buffer layer 10. MOVPE growth with same conditions as Sample A. SIMS analysis showed Fe concentration in layer 8 of sample B (~2e18 cm⁻³ at 0.5 µm depth) was lower than in sample A (~4e18 cm⁻³ at 0.5 µm depth).
4 materials1 process step
Sample C has same structure as Sample B but with semiconductor layer 8 thickness T2=480 nm and first AlN buffer layer 10 thickness T3=300 nm.
4 materials1 process step
Sample D has an Fe-doped GaN layer, a first AlN buffer layer 10, an intermediate layer 9 of undoped GaN on the first buffer layer, a second AlN buffer layer 12 on the intermediate layer 9, another intermediate layer 11 of undoped GaN on the second buffer layer 12, a second buffer layer 14 on intermediate layer 11, and an undoped GaN semiconductor layer 13 on the second buffer layer 14. Multiple second buffer layers 12 and 14 are alternately stacked with intermediate layers 9 and 11.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device (HEMT or FET) with single Fe-doped GaN layer and AlN first buffer layer
semiconductor device with Fe-doped GaN layer, first AlN buffer layer, intermediate layer, second buffer layer, and operating layer
Materials described outside the worked examples.
GaN-based semiconductor
AlN or AlXGa₁-XN (0.4 < x < 1)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fe doping concentration in semiconductor layer 6 during growth | 1200000000000000000–1500000000000000000 cm⁻³ | GaN:Fe |
Fe concentration in Fe-doped GaN layer 6 (SIMS, sample A) | 1000000000000000000 cm⁻³ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,378,388Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a semiconductor layer made of Fe-doped GaN; a first buffer layer that is provided on the semiconductor layer so as to contact an upper surface of the semiconductor layer and is made of A l N; [[and]] an operating layer that is provided on the first buffer layer and is made of a GaN-based semiconductor, wherein the semiconductor layer is a single layer, and, wherein the first buffer la y er has a thickness that is equal to or greater than 50 nm and is equal to or less than 300 nm.
The semiconductor device according to claim 1, wherein the semiconductor device is a HEM T or FET.
[[The]] A semiconductor device a, comprising: a semiconductor la y er made of Fe-doped GaN; a first buffer la y er that is provided on the semiconductor la y er so as to contact an upper surface of the semiconductor la v er and is made of A lN; an operating la y er that is provided on the first buffer la y er and is made of a GaN-based semiconductor, a second buffer layer that is provided on the first buffer layer and is made of A l N or A lXGa X N (0.4 < x < 1); [[and]] 2 Application No. 12/731,621 Docket No. 100420 an intermediate layer that is provided between the first and second buffer layers and is made of Al x1Iny1 Gai xiy1 N (x l + y l < 1) having an Al composition ratio smaller than Al composition ratios of the first and second buffer layers, wherein the semiconductor la y er is a single la y er, and the operating layer be -in g is provided on the second buffer layer.
The semiconductor device according to claim 2, wherein the second buffer layer includes multiple second buffer layers, and the intermediate layer includes multiple intermediate layers.
canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
Sample A consists of a SiC substrate, an AlN buffer layer (buffer layer 4), an Fe-doped GaN semiconductor layer 6 (thickness T1=630 nm), and an undoped GaN semiconductor layer 8 (thickness T2=780 nm) directly on top of layer 6. MOVPE was used for epitaxial growth. Fe doping concentration in layer 6 was 1.2e18–1.5e18 cm⁻³. Growth conditions: N₂ carrier gas, 100 torr pressure, 1050°C, NH₃ partial pressure 40 torr. SIMS analysis showed Fe concentration ~1e18 cm⁻³ in layer 6, with Fe entrapment in layer 8.
4 materials1 process step
Sample B consists of a SiC substrate, an AlN buffer layer (buffer layer 4), an Fe-doped GaN semiconductor layer 6, a first AlN buffer layer 10 (thickness T3=150 nm) contacting the upper surface of layer 6, and an undoped GaN semiconductor layer 8 (thickness T2=630 nm) on top of first buffer layer 10. MOVPE growth with same conditions as Sample A. SIMS analysis showed Fe concentration in layer 8 of sample B (~2e18 cm⁻³ at 0.5 µm depth) was lower than in sample A (~4e18 cm⁻³ at 0.5 µm depth).
4 materials1 process step
Sample C has same structure as Sample B but with semiconductor layer 8 thickness T2=480 nm and first AlN buffer layer 10 thickness T3=300 nm.
4 materials1 process step
Sample D has an Fe-doped GaN layer, a first AlN buffer layer 10, an intermediate layer 9 of undoped GaN on the first buffer layer, a second AlN buffer layer 12 on the intermediate layer 9, another intermediate layer 11 of undoped GaN on the second buffer layer 12, a second buffer layer 14 on intermediate layer 11, and an undoped GaN semiconductor layer 13 on the second buffer layer 14. Multiple second buffer layers 12 and 14 are alternately stacked with intermediate layers 9 and 11.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device (HEMT or FET) with single Fe-doped GaN layer and AlN first buffer layer
semiconductor device with Fe-doped GaN layer, first AlN buffer layer, intermediate layer, second buffer layer, and operating layer
Materials described outside the worked examples.
GaN-based semiconductor
AlN or AlXGa₁-XN (0.4 < x < 1)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fe doping concentration in semiconductor layer 6 during growth | 1200000000000000000–1500000000000000000 cm⁻³ | GaN:Fe |
Fe concentration in Fe-doped GaN layer 6 (SIMS, sample A) | 1000000000000000000 cm⁻³ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,378,388Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a semiconductor layer made of Fe-doped GaN; a first buffer layer that is provided on the semiconductor layer so as to contact an upper surface of the semiconductor layer and is made of A l N; [[and]] an operating layer that is provided on the first buffer layer and is made of a GaN-based semiconductor, wherein the semiconductor layer is a single layer, and, wherein the first buffer la y er has a thickness that is equal to or greater than 50 nm and is equal to or less than 300 nm.
The semiconductor device according to claim 1, wherein the semiconductor device is a HEM T or FET.
[[The]] A semiconductor device a, comprising: a semiconductor la y er made of Fe-doped GaN; a first buffer la y er that is provided on the semiconductor la y er so as to contact an upper surface of the semiconductor la v er and is made of A lN; an operating la y er that is provided on the first buffer la y er and is made of a GaN-based semiconductor, a second buffer layer that is provided on the first buffer layer and is made of A l N or A lXGa X N (0.4 < x < 1); [[and]] 2 Application No. 12/731,621 Docket No. 100420 an intermediate layer that is provided between the first and second buffer layers and is made of Al x1Iny1 Gai xiy1 N (x l + y l < 1) having an Al composition ratio smaller than Al composition ratios of the first and second buffer layers, wherein the semiconductor la y er is a single la y er, and the operating layer be -in g is provided on the second buffer layer.
The semiconductor device according to claim 2, wherein the second buffer layer includes multiple second buffer layers, and the intermediate layer includes multiple intermediate layers.
canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
Sample A consists of a SiC substrate, an AlN buffer layer (buffer layer 4), an Fe-doped GaN semiconductor layer 6 (thickness T1=630 nm), and an undoped GaN semiconductor layer 8 (thickness T2=780 nm) directly on top of layer 6. MOVPE was used for epitaxial growth. Fe doping concentration in layer 6 was 1.2e18–1.5e18 cm⁻³. Growth conditions: N₂ carrier gas, 100 torr pressure, 1050°C, NH₃ partial pressure 40 torr. SIMS analysis showed Fe concentration ~1e18 cm⁻³ in layer 6, with Fe entrapment in layer 8.
4 materials1 process step
Sample B consists of a SiC substrate, an AlN buffer layer (buffer layer 4), an Fe-doped GaN semiconductor layer 6, a first AlN buffer layer 10 (thickness T3=150 nm) contacting the upper surface of layer 6, and an undoped GaN semiconductor layer 8 (thickness T2=630 nm) on top of first buffer layer 10. MOVPE growth with same conditions as Sample A. SIMS analysis showed Fe concentration in layer 8 of sample B (~2e18 cm⁻³ at 0.5 µm depth) was lower than in sample A (~4e18 cm⁻³ at 0.5 µm depth).
4 materials1 process step
Sample C has same structure as Sample B but with semiconductor layer 8 thickness T2=480 nm and first AlN buffer layer 10 thickness T3=300 nm.
4 materials1 process step
Sample D has an Fe-doped GaN layer, a first AlN buffer layer 10, an intermediate layer 9 of undoped GaN on the first buffer layer, a second AlN buffer layer 12 on the intermediate layer 9, another intermediate layer 11 of undoped GaN on the second buffer layer 12, a second buffer layer 14 on intermediate layer 11, and an undoped GaN semiconductor layer 13 on the second buffer layer 14. Multiple second buffer layers 12 and 14 are alternately stacked with intermediate layers 9 and 11.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device (HEMT or FET) with single Fe-doped GaN layer and AlN first buffer layer
semiconductor device with Fe-doped GaN layer, first AlN buffer layer, intermediate layer, second buffer layer, and operating layer
Materials described outside the worked examples.
GaN-based semiconductor
AlN or AlXGa₁-XN (0.4 < x < 1)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fe doping concentration in semiconductor layer 6 during growth | 1200000000000000000–1500000000000000000 cm⁻³ | GaN:Fe |
Fe concentration in Fe-doped GaN layer 6 (SIMS, sample A) | 1000000000000000000 cm⁻³ |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,378,388Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A semiconductor device comprising: a semiconductor layer made of Fe-doped GaN; a first buffer layer that is provided on the semiconductor layer so as to contact an upper surface of the semiconductor layer and is made of A l N; [[and]] an operating layer that is provided on the first buffer layer and is made of a GaN-based semiconductor, wherein the semiconductor layer is a single layer, and, wherein the first buffer la y er has a thickness that is equal to or greater than 50 nm and is equal to or less than 300 nm.
The semiconductor device according to claim 1, wherein the semiconductor device is a HEM T or FET.
[[The]] A semiconductor device a, comprising: a semiconductor la y er made of Fe-doped GaN; a first buffer la y er that is provided on the semiconductor la y er so as to contact an upper surface of the semiconductor la v er and is made of A lN; an operating la y er that is provided on the first buffer la y er and is made of a GaN-based semiconductor, a second buffer layer that is provided on the first buffer layer and is made of A l N or A lXGa X N (0.4 < x < 1); [[and]] 2 Application No. 12/731,621 Docket No. 100420 an intermediate layer that is provided between the first and second buffer layers and is made of Al x1Iny1 Gai xiy1 N (x l + y l < 1) having an Al composition ratio smaller than Al composition ratios of the first and second buffer layers, wherein the semiconductor la y er is a single la y er, and the operating layer be -in g is provided on the second buffer layer.
The semiconductor device according to claim 2, wherein the second buffer layer includes multiple second buffer layers, and the intermediate layer includes multiple intermediate layers.
canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
4 materials1 process step
Sample A consists of a SiC substrate, an AlN buffer layer (buffer layer 4), an Fe-doped GaN semiconductor layer 6 (thickness T1=630 nm), and an undoped GaN semiconductor layer 8 (thickness T2=780 nm) directly on top of layer 6. MOVPE was used for epitaxial growth. Fe doping concentration in layer 6 was 1.2e18–1.5e18 cm⁻³. Growth conditions: N₂ carrier gas, 100 torr pressure, 1050°C, NH₃ partial pressure 40 torr. SIMS analysis showed Fe concentration ~1e18 cm⁻³ in layer 6, with Fe entrapment in layer 8.
4 materials1 process step
Sample B consists of a SiC substrate, an AlN buffer layer (buffer layer 4), an Fe-doped GaN semiconductor layer 6, a first AlN buffer layer 10 (thickness T3=150 nm) contacting the upper surface of layer 6, and an undoped GaN semiconductor layer 8 (thickness T2=630 nm) on top of first buffer layer 10. MOVPE growth with same conditions as Sample A. SIMS analysis showed Fe concentration in layer 8 of sample B (~2e18 cm⁻³ at 0.5 µm depth) was lower than in sample A (~4e18 cm⁻³ at 0.5 µm depth).
4 materials1 process step
Sample C has same structure as Sample B but with semiconductor layer 8 thickness T2=480 nm and first AlN buffer layer 10 thickness T3=300 nm.
4 materials1 process step
Sample D has an Fe-doped GaN layer, a first AlN buffer layer 10, an intermediate layer 9 of undoped GaN on the first buffer layer, a second AlN buffer layer 12 on the intermediate layer 9, another intermediate layer 11 of undoped GaN on the second buffer layer 12, a second buffer layer 14 on intermediate layer 11, and an undoped GaN semiconductor layer 13 on the second buffer layer 14. Multiple second buffer layers 12 and 14 are alternately stacked with intermediate layers 9 and 11.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor device (HEMT or FET) with single Fe-doped GaN layer and AlN first buffer layer
semiconductor device with Fe-doped GaN layer, first AlN buffer layer, intermediate layer, second buffer layer, and operating layer
Materials described outside the worked examples.
GaN-based semiconductor
AlN or AlXGa₁-XN (0.4 < x < 1)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fe doping concentration in semiconductor layer 6 during growth | 1200000000000000000–1500000000000000000 cm⁻³ | GaN:Fe |
Fe concentration in Fe-doped GaN layer 6 (SIMS, sample A) | 1000000000000000000 cm⁻³ |
Related documents with shared materials, methods, properties, or citations.
Alx1Iny1Ga₁-x1-y1N (x1 + y1 < 1)
GaN:Fe |
Fe concentration in undoped GaN layer 8 at 0.5 µm depth (SIMS, sample A) | 4000000000000000000 cm⁻³ | GaN |
Fe concentration in undoped GaN layer 8 at 0.5 µm depth (SIMS, sample B) | 2000000000000000000 cm⁻³ | GaN |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 300 nm | — |
Thickness | ≤ 150 nm | — |
Thickness | ≥ 4 nm | — |
Thickness | ≥ 50 nm | — |
Alx1Iny1Ga₁-x1-y1N (x1 + y1 < 1)
GaN:Fe |
Fe concentration in undoped GaN layer 8 at 0.5 µm depth (SIMS, sample A) | 4000000000000000000 cm⁻³ | GaN |
Fe concentration in undoped GaN layer 8 at 0.5 µm depth (SIMS, sample B) | 2000000000000000000 cm⁻³ | GaN |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 300 nm | — |
Thickness | ≤ 150 nm | — |
Thickness | ≥ 4 nm | — |
Thickness | ≥ 50 nm | — |
Alx1Iny1Ga₁-x1-y1N (x1 + y1 < 1)
GaN:Fe |
Fe concentration in undoped GaN layer 8 at 0.5 µm depth (SIMS, sample A) | 4000000000000000000 cm⁻³ | GaN |
Fe concentration in undoped GaN layer 8 at 0.5 µm depth (SIMS, sample B) | 2000000000000000000 cm⁻³ | GaN |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 300 nm | — |
Thickness | ≤ 150 nm | — |
Thickness | ≥ 4 nm | — |
Thickness | ≥ 50 nm | — |
Alx1Iny1Ga₁-x1-y1N (x1 + y1 < 1)
GaN:Fe |
Fe concentration in undoped GaN layer 8 at 0.5 µm depth (SIMS, sample A) | 4000000000000000000 cm⁻³ | GaN |
Fe concentration in undoped GaN layer 8 at 0.5 µm depth (SIMS, sample B) | 2000000000000000000 cm⁻³ | GaN |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 300 nm | — |
Thickness | ≤ 150 nm | — |
Thickness | ≥ 4 nm | — |
Thickness | ≥ 50 nm | — |