Patent
US 10,633,764GALLIUM NITRIDE CRYSTAL, ITS MANUFACTURING METHOD, AND CRYSTAL GROWTH APPARATUS
Taishi KIMURA
US
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Patent
Atlas literature
Patent
US 10,633,764Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride crystal wherein a nanovoid density in the crystal is less than 1 x 1 0 5 [cm- 2] 1 wherein a B impurity concentration in the crystal is 3 x 1 0 11 [cm⁻³ or less. Currently amended
The gallium nitride crystal according to Claim 1, wherein the nanovoid density is less than 1 x 10 4 [cm⁻²]. Original
The gallium nitride crystal according to Claim 1. wherein a- the B impurity concentration in the crystal is 1 x 1 0 1 ([cm '] or less. Currently amended
The gallium nitride crystal according to Claim 1, wherein the concentrations of an Na impurity, a K impurity, an Ni impurity, and a Cr impurity in the crystal are 1 x 10 14 [c m] or less, respectively. Original
A crystal growth apparatus for manufactu r ing the gallium nitride crystal according to Claim 1. wherein the apparatus uses a member having a B concentration of less than 1 ppm at least at a surface part as a member used at a part where a temperature is 500 ' C or higher (high-temperature member) among members exposed to a crystal growth space. Withdrawn
Canceled
A manufacturing method of a gallium nitride crystal with the crystal growth apparatus according
Layer stacks claimed or described, ordered top of device to substrate.
crystal growth apparatus for gallium nitride
No layer stack recorded.
Materials described outside the worked examples.
gallium nitride crystal
GaN
TaC
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Nanovoid Density | ≤ 100000 cm⁻² | GaN |
Nanovoid Density | ≤ 10000 cm⁻² |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,633,764Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride crystal wherein a nanovoid density in the crystal is less than 1 x 1 0 5 [cm- 2] 1 wherein a B impurity concentration in the crystal is 3 x 1 0 11 [cm⁻³ or less. Currently amended
The gallium nitride crystal according to Claim 1, wherein the nanovoid density is less than 1 x 10 4 [cm⁻²]. Original
The gallium nitride crystal according to Claim 1. wherein a- the B impurity concentration in the crystal is 1 x 1 0 1 ([cm '] or less. Currently amended
The gallium nitride crystal according to Claim 1, wherein the concentrations of an Na impurity, a K impurity, an Ni impurity, and a Cr impurity in the crystal are 1 x 10 14 [c m] or less, respectively. Original
A crystal growth apparatus for manufactu r ing the gallium nitride crystal according to Claim 1. wherein the apparatus uses a member having a B concentration of less than 1 ppm at least at a surface part as a member used at a part where a temperature is 500 ' C or higher (high-temperature member) among members exposed to a crystal growth space. Withdrawn
Canceled
A manufacturing method of a gallium nitride crystal with the crystal growth apparatus according
Layer stacks claimed or described, ordered top of device to substrate.
crystal growth apparatus for gallium nitride
No layer stack recorded.
Materials described outside the worked examples.
gallium nitride crystal
GaN
TaC
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Nanovoid Density | ≤ 100000 cm⁻² | GaN |
Nanovoid Density | ≤ 10000 cm⁻² |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,633,764Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride crystal wherein a nanovoid density in the crystal is less than 1 x 1 0 5 [cm- 2] 1 wherein a B impurity concentration in the crystal is 3 x 1 0 11 [cm⁻³ or less. Currently amended
The gallium nitride crystal according to Claim 1, wherein the nanovoid density is less than 1 x 10 4 [cm⁻²]. Original
The gallium nitride crystal according to Claim 1. wherein a- the B impurity concentration in the crystal is 1 x 1 0 1 ([cm '] or less. Currently amended
The gallium nitride crystal according to Claim 1, wherein the concentrations of an Na impurity, a K impurity, an Ni impurity, and a Cr impurity in the crystal are 1 x 10 14 [c m] or less, respectively. Original
A crystal growth apparatus for manufactu r ing the gallium nitride crystal according to Claim 1. wherein the apparatus uses a member having a B concentration of less than 1 ppm at least at a surface part as a member used at a part where a temperature is 500 ' C or higher (high-temperature member) among members exposed to a crystal growth space. Withdrawn
Canceled
A manufacturing method of a gallium nitride crystal with the crystal growth apparatus according
Layer stacks claimed or described, ordered top of device to substrate.
crystal growth apparatus for gallium nitride
No layer stack recorded.
Materials described outside the worked examples.
gallium nitride crystal
GaN
TaC
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Nanovoid Density | ≤ 100000 cm⁻² | GaN |
Nanovoid Density | ≤ 10000 cm⁻² |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,633,764Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride crystal wherein a nanovoid density in the crystal is less than 1 x 1 0 5 [cm- 2] 1 wherein a B impurity concentration in the crystal is 3 x 1 0 11 [cm⁻³ or less. Currently amended
The gallium nitride crystal according to Claim 1, wherein the nanovoid density is less than 1 x 10 4 [cm⁻²]. Original
The gallium nitride crystal according to Claim 1. wherein a- the B impurity concentration in the crystal is 1 x 1 0 1 ([cm '] or less. Currently amended
The gallium nitride crystal according to Claim 1, wherein the concentrations of an Na impurity, a K impurity, an Ni impurity, and a Cr impurity in the crystal are 1 x 10 14 [c m] or less, respectively. Original
A crystal growth apparatus for manufactu r ing the gallium nitride crystal according to Claim 1. wherein the apparatus uses a member having a B concentration of less than 1 ppm at least at a surface part as a member used at a part where a temperature is 500 ' C or higher (high-temperature member) among members exposed to a crystal growth space. Withdrawn
Canceled
A manufacturing method of a gallium nitride crystal with the crystal growth apparatus according
Layer stacks claimed or described, ordered top of device to substrate.
crystal growth apparatus for gallium nitride
No layer stack recorded.
Materials described outside the worked examples.
gallium nitride crystal
GaN
TaC
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Nanovoid Density | ≤ 100000 cm⁻² | GaN |
Nanovoid Density | ≤ 10000 cm⁻² |
Related documents with shared materials, methods, properties, or citations.
SiC
graphite
C
pyrolytic boron nitride (pBN)
BN
B Impurity Concentration | ≤ 300000000000 cm⁻³ | GaN |
B Impurity Concentration | ≤ 100000000000 cm⁻³ | GaN |
Na Impurity Concentration | ≤ 100000000000000 cm⁻³ | GaN |
K Impurity Concentration | ≤ 100000000000000 cm⁻³ | GaN |
Ni Impurity Concentration | ≤ 100000000000000 cm⁻³ | GaN |
Cr Impurity Concentration | ≤ 100000000000000 cm⁻³ | GaN |
SiC
graphite
C
pyrolytic boron nitride (pBN)
BN
B Impurity Concentration | ≤ 300000000000 cm⁻³ | GaN |
B Impurity Concentration | ≤ 100000000000 cm⁻³ | GaN |
Na Impurity Concentration | ≤ 100000000000000 cm⁻³ | GaN |
K Impurity Concentration | ≤ 100000000000000 cm⁻³ | GaN |
Ni Impurity Concentration | ≤ 100000000000000 cm⁻³ | GaN |
Cr Impurity Concentration | ≤ 100000000000000 cm⁻³ | GaN |
SiC
graphite
C
pyrolytic boron nitride (pBN)
BN
B Impurity Concentration | ≤ 300000000000 cm⁻³ | GaN |
B Impurity Concentration | ≤ 100000000000 cm⁻³ | GaN |
Na Impurity Concentration | ≤ 100000000000000 cm⁻³ | GaN |
K Impurity Concentration | ≤ 100000000000000 cm⁻³ | GaN |
Ni Impurity Concentration | ≤ 100000000000000 cm⁻³ | GaN |
Cr Impurity Concentration | ≤ 100000000000000 cm⁻³ | GaN |
SiC
graphite
C
pyrolytic boron nitride (pBN)
BN
B Impurity Concentration | ≤ 300000000000 cm⁻³ | GaN |
B Impurity Concentration | ≤ 100000000000 cm⁻³ | GaN |
Na Impurity Concentration | ≤ 100000000000000 cm⁻³ | GaN |
K Impurity Concentration | ≤ 100000000000000 cm⁻³ | GaN |
Ni Impurity Concentration | ≤ 100000000000000 cm⁻³ | GaN |
Cr Impurity Concentration | ≤ 100000000000000 cm⁻³ | GaN |