CRYSTAL PRODUCING APPARATUS, CRYSTAL PRODUCING METHOD, SUBSTRATE PRODUCING METHOD, GALLIUM NITRIDE CRYSTAL, AND GALLIUM NITRIDE SUBSTRATE

Seiji Sarayama

Patent

Atlas literature

Patent

US 8,829,530

CRYSTAL PRODUCING APPARATUS, CRYSTAL PRODUCING METHOD, SUBSTRATE PRODUCING METHOD, GALLIUM NITRIDE CRYSTAL, AND GALLIUM NITRIDE SUBSTRATE

Seiji Sarayama

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

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Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

123
Dependent← claim 1, claim 2, claim 3, claim 4, claim 5, claim 6, claim 7, claim 8, claim 9, claim 10, claim 11, claim 12, claim 13, claim 14, claim 15, claim 16, claim 17, claim 18, claim 19, claim 20, claim 21, claim 22, claim 23GaNGaNmelt mixture of metal sodium and metal galliumcrystal producing apparatus
4567891011121314151617181920212223. Seiji SA RAYAM A et al. Dkt. 2271/7811 15-A Rule 1.53(b) Con tin. of 11/906,285 F iled: (he r ewith) Page 3 Listin g of Claims The following listing of claims will replace all prior versions, and listings, of claims in the subject application: Claims 1-23.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

crystal producing apparatus

GaNbulk epitaxial crystal

GaNseed substrate

Materials

Materials described outside the worked examples.

gallium nitride (first GaN crystal, flux method)

GaN

Seed Crystal

Epitaxial Layer

melt mixture of metal sodium and metal gallium

Precursor Melt

Process steps

Additional fabrication and treatment steps described in the patent.

Flux Growth

Step 1

Ambient

nitride gas

Process details

method:flux method

gas supply:nitride gas into melt mixture

melt components:metal Na, metal Ga

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Pressure	≤ 1 pa	—
Pressure	≤ 0.133 pa

Why these are connected

Related documents with shared materials, methods, properties, or citations.

CRYSTAL PRODUCING APPARATUS, CRYSTAL PRODUCING METHOD, SUBSTRATE PRODUCING METHOD, GALLIUM NITRIDE CRYSTAL, AND GALLIUM NITRIDE SUBSTRATE | Matter42 Literature