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Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-20. Canceled
Canceled
A method for producing a GaN crystal, the method comprising: (i) a seed crystal preparation step of preparing a GaN seed crystal having one or more facets selected from a {10-10} facet and a {10-1-1} facet; and (ii) a growth step of growing GaN from vapor phase on a surface comprising the one or more facets of the GaN seed crystal using GaC l 3 and N H 3 as raw materials. Previously presented
The method for producing a GaN crystal according to claim 21, wherein in the GaN seed crystal, a ratio of a size in a direction of a c-axis to a size in an arbitrary direction perpendicular to the c-axis is not less than 0.1 and not more than 10. Previously presented
The method for producing a GaN crystal according to claim 21, wherein each of the one or more facets is an as-grown surface. Previously presented
The method for producing a GaN crystal according to claim 21, wherein the GaN seed crystal further has a (000-1) facet. Previously presented
The method for producing a GaN crystal according to claim 21, wherein in the growth step, GaN is grown on each of the one or more facets at a growth rate of 1 m/h or more. Previously presented
The method for producing a GaN crystal according to claim 21, wherein in the growth step, GaC l 3 is supplied to the GaN seed crystal at a partial pressure of 1.5 x 10-3 atm or more. Previously presented
The method for producing a GaN crystal according to claim 21, wherein in the growth step, a product of partial pressures of GaC l 3 and N H 3 supplied to the GaN seed crystal is 9.5 x 10-5 atm 2 or more. Previously presented
The method for producing a GaN crystal according to claim 21, wherein in the growth step, growth of GaN is repeated intermittently. Previously presented
The method for producing a GaN crystal according to claim 21, wherein the GaC l 3 is generated by reacting metal Ga and C 1 2 with each other to produce GaC l and reacting the produced GaC l with C 1 2. Previously presented
The method for producing a GaN crystal according to claim 21, wherein in the growth step, GaN is grown at a growth temperature of 1200 ° C or more. Previously presented
A method for producing a GaN wafer, the method comprising: a crystal production step of producing a GaN crystal by the method for producing a GaN crystal according to claim 21; and a crystal processing step of processing the GaN crystal produced in the crystal production step to form at least one GaN wafer. Previously presented
Materials described outside the worked examples.
GaN
GaCl₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.8–1.2 atm | — |
Pressure |
Table 1
Experiment 1 As seed crystals, nine G aN substrates A to I having different surface orientations as shown in Table 1 below were prepared.
p. 33
Table 2
The conditions were as shown in Table 2 below, and the growth time was set to 2 hours.
p. 33
Table 3
The results obtained in Experiment 1 are shown summarized in Table 3.
p. 35
Table 4
As a result, G aN growth rates on the respective first main surfaces of the G aN substrates were as shown in Table 4 below.
p. 36
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-20. Canceled
Canceled
A method for producing a GaN crystal, the method comprising: (i) a seed crystal preparation step of preparing a GaN seed crystal having one or more facets selected from a {10-10} facet and a {10-1-1} facet; and (ii) a growth step of growing GaN from vapor phase on a surface comprising the one or more facets of the GaN seed crystal using GaC l 3 and N H 3 as raw materials. Previously presented
The method for producing a GaN crystal according to claim 21, wherein in the GaN seed crystal, a ratio of a size in a direction of a c-axis to a size in an arbitrary direction perpendicular to the c-axis is not less than 0.1 and not more than 10. Previously presented
The method for producing a GaN crystal according to claim 21, wherein each of the one or more facets is an as-grown surface. Previously presented
The method for producing a GaN crystal according to claim 21, wherein the GaN seed crystal further has a (000-1) facet. Previously presented
The method for producing a GaN crystal according to claim 21, wherein in the growth step, GaN is grown on each of the one or more facets at a growth rate of 1 m/h or more. Previously presented
The method for producing a GaN crystal according to claim 21, wherein in the growth step, GaC l 3 is supplied to the GaN seed crystal at a partial pressure of 1.5 x 10-3 atm or more. Previously presented
The method for producing a GaN crystal according to claim 21, wherein in the growth step, a product of partial pressures of GaC l 3 and N H 3 supplied to the GaN seed crystal is 9.5 x 10-5 atm 2 or more. Previously presented
The method for producing a GaN crystal according to claim 21, wherein in the growth step, growth of GaN is repeated intermittently. Previously presented
The method for producing a GaN crystal according to claim 21, wherein the GaC l 3 is generated by reacting metal Ga and C 1 2 with each other to produce GaC l and reacting the produced GaC l with C 1 2. Previously presented
The method for producing a GaN crystal according to claim 21, wherein in the growth step, GaN is grown at a growth temperature of 1200 ° C or more. Previously presented
A method for producing a GaN wafer, the method comprising: a crystal production step of producing a GaN crystal by the method for producing a GaN crystal according to claim 21; and a crystal processing step of processing the GaN crystal produced in the crystal production step to form at least one GaN wafer. Previously presented
Materials described outside the worked examples.
GaN
GaCl₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.8–1.2 atm | — |
Pressure |
Table 1
Experiment 1 As seed crystals, nine G aN substrates A to I having different surface orientations as shown in Table 1 below were prepared.
p. 33
Table 2
The conditions were as shown in Table 2 below, and the growth time was set to 2 hours.
p. 33
Table 3
The results obtained in Experiment 1 are shown summarized in Table 3.
p. 35
Table 4
As a result, G aN growth rates on the respective first main surfaces of the G aN substrates were as shown in Table 4 below.
p. 36
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-20. Canceled
Canceled
A method for producing a GaN crystal, the method comprising: (i) a seed crystal preparation step of preparing a GaN seed crystal having one or more facets selected from a {10-10} facet and a {10-1-1} facet; and (ii) a growth step of growing GaN from vapor phase on a surface comprising the one or more facets of the GaN seed crystal using GaC l 3 and N H 3 as raw materials. Previously presented
The method for producing a GaN crystal according to claim 21, wherein in the GaN seed crystal, a ratio of a size in a direction of a c-axis to a size in an arbitrary direction perpendicular to the c-axis is not less than 0.1 and not more than 10. Previously presented
The method for producing a GaN crystal according to claim 21, wherein each of the one or more facets is an as-grown surface. Previously presented
The method for producing a GaN crystal according to claim 21, wherein the GaN seed crystal further has a (000-1) facet. Previously presented
The method for producing a GaN crystal according to claim 21, wherein in the growth step, GaN is grown on each of the one or more facets at a growth rate of 1 m/h or more. Previously presented
The method for producing a GaN crystal according to claim 21, wherein in the growth step, GaC l 3 is supplied to the GaN seed crystal at a partial pressure of 1.5 x 10-3 atm or more. Previously presented
The method for producing a GaN crystal according to claim 21, wherein in the growth step, a product of partial pressures of GaC l 3 and N H 3 supplied to the GaN seed crystal is 9.5 x 10-5 atm 2 or more. Previously presented
The method for producing a GaN crystal according to claim 21, wherein in the growth step, growth of GaN is repeated intermittently. Previously presented
The method for producing a GaN crystal according to claim 21, wherein the GaC l 3 is generated by reacting metal Ga and C 1 2 with each other to produce GaC l and reacting the produced GaC l with C 1 2. Previously presented
The method for producing a GaN crystal according to claim 21, wherein in the growth step, GaN is grown at a growth temperature of 1200 ° C or more. Previously presented
A method for producing a GaN wafer, the method comprising: a crystal production step of producing a GaN crystal by the method for producing a GaN crystal according to claim 21; and a crystal processing step of processing the GaN crystal produced in the crystal production step to form at least one GaN wafer. Previously presented
Materials described outside the worked examples.
GaN
GaCl₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.8–1.2 atm | — |
Pressure |
Table 1
Experiment 1 As seed crystals, nine G aN substrates A to I having different surface orientations as shown in Table 1 below were prepared.
p. 33
Table 2
The conditions were as shown in Table 2 below, and the growth time was set to 2 hours.
p. 33
Table 3
The results obtained in Experiment 1 are shown summarized in Table 3.
p. 35
Table 4
As a result, G aN growth rates on the respective first main surfaces of the G aN substrates were as shown in Table 4 below.
p. 36
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Claims 1-20. Canceled
Canceled
A method for producing a GaN crystal, the method comprising: (i) a seed crystal preparation step of preparing a GaN seed crystal having one or more facets selected from a {10-10} facet and a {10-1-1} facet; and (ii) a growth step of growing GaN from vapor phase on a surface comprising the one or more facets of the GaN seed crystal using GaC l 3 and N H 3 as raw materials. Previously presented
The method for producing a GaN crystal according to claim 21, wherein in the GaN seed crystal, a ratio of a size in a direction of a c-axis to a size in an arbitrary direction perpendicular to the c-axis is not less than 0.1 and not more than 10. Previously presented
The method for producing a GaN crystal according to claim 21, wherein each of the one or more facets is an as-grown surface. Previously presented
The method for producing a GaN crystal according to claim 21, wherein the GaN seed crystal further has a (000-1) facet. Previously presented
The method for producing a GaN crystal according to claim 21, wherein in the growth step, GaN is grown on each of the one or more facets at a growth rate of 1 m/h or more. Previously presented
The method for producing a GaN crystal according to claim 21, wherein in the growth step, GaC l 3 is supplied to the GaN seed crystal at a partial pressure of 1.5 x 10-3 atm or more. Previously presented
The method for producing a GaN crystal according to claim 21, wherein in the growth step, a product of partial pressures of GaC l 3 and N H 3 supplied to the GaN seed crystal is 9.5 x 10-5 atm 2 or more. Previously presented
The method for producing a GaN crystal according to claim 21, wherein in the growth step, growth of GaN is repeated intermittently. Previously presented
The method for producing a GaN crystal according to claim 21, wherein the GaC l 3 is generated by reacting metal Ga and C 1 2 with each other to produce GaC l and reacting the produced GaC l with C 1 2. Previously presented
The method for producing a GaN crystal according to claim 21, wherein in the growth step, GaN is grown at a growth temperature of 1200 ° C or more. Previously presented
A method for producing a GaN wafer, the method comprising: a crystal production step of producing a GaN crystal by the method for producing a GaN crystal according to claim 21; and a crystal processing step of processing the GaN crystal produced in the crystal production step to form at least one GaN wafer. Previously presented
Materials described outside the worked examples.
GaN
GaCl₃
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Pressure | 0.8–1.2 atm | — |
Pressure |
Table 1
Experiment 1 As seed crystals, nine G aN substrates A to I having different surface orientations as shown in Table 1 below were prepared.
p. 33
Table 2
The conditions were as shown in Table 2 below, and the growth time was set to 2 hours.
p. 33
Table 3
The results obtained in Experiment 1 are shown summarized in Table 3.
p. 35
Table 4
As a result, G aN growth rates on the respective first main surfaces of the G aN substrates were as shown in Table 4 below.
p. 36
Related documents with shared materials, methods, properties, or citations.
NH₃
metal Ga
Ga
Cl₂
GaCl
| 0–3 atm |
| — |
Pressure | 0.001 atm | — |
Thickness | ≤ 40 cm | — |
Thickness | ≤ 60 cm | — |
Thickness | ≤ 120 cm | — |
Thickness | ≤ 180 cm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 3 mm | — |
Thickness | ≤ 5 mm | — |
Thickness | ≤ 10 mm | — |
Thickness | ≤ 25 mm | — |
Thickness | ≤ 50 mm | — |
Thickness | ≤ 75 mm | — |
Thickness | ≤ 200 mm | — |
Table 5
Experiment 3 As seed crystals, two types of G aN substrates J and K shown in Table 5 below were prepared.
p. 36
Table 6
The conditions were as shown in Table 6 below, and the growth time was set to 1 hour.
p. 36
Table 7
The results obtained in Experiment 3 are shown summarized in Table 7.
p. 36
Table 8
each of the above-described GaN substrates A and E under four sets of conditions (Conditions 1 to 4) shown in Table 8 below.
p. 37
Table 9
ective G aN substrates were measured by SIMS (Secondary I on Mass Spectroscopy), and the results are shown in Table 9 below.
p. 37
Table 10
grown on the first main surface of each of the G aN substrates M and N under three sets of conditions shown in Table 10 below.
p. 38
Table 11
ment 1, GaN was grown on the first main surface of the GaN substrate O under three sets of conditions shown in Table 11 below.
p. 39
NON-POLAR OR SEMI-POLAR GaN WAFER
NH₃
metal Ga
Ga
Cl₂
GaCl
| 0–3 atm |
| — |
Pressure | 0.001 atm | — |
Thickness | ≤ 40 cm | — |
Thickness | ≤ 60 cm | — |
Thickness | ≤ 120 cm | — |
Thickness | ≤ 180 cm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 3 mm | — |
Thickness | ≤ 5 mm | — |
Thickness | ≤ 10 mm | — |
Thickness | ≤ 25 mm | — |
Thickness | ≤ 50 mm | — |
Thickness | ≤ 75 mm | — |
Thickness | ≤ 200 mm | — |
Table 5
Experiment 3 As seed crystals, two types of G aN substrates J and K shown in Table 5 below were prepared.
p. 36
Table 6
The conditions were as shown in Table 6 below, and the growth time was set to 1 hour.
p. 36
Table 7
The results obtained in Experiment 3 are shown summarized in Table 7.
p. 36
Table 8
each of the above-described GaN substrates A and E under four sets of conditions (Conditions 1 to 4) shown in Table 8 below.
p. 37
Table 9
ective G aN substrates were measured by SIMS (Secondary I on Mass Spectroscopy), and the results are shown in Table 9 below.
p. 37
Table 10
grown on the first main surface of each of the G aN substrates M and N under three sets of conditions shown in Table 10 below.
p. 38
Table 11
ment 1, GaN was grown on the first main surface of the GaN substrate O under three sets of conditions shown in Table 11 below.
p. 39
NON-POLAR OR SEMI-POLAR GaN WAFER
NH₃
metal Ga
Ga
Cl₂
GaCl
| 0–3 atm |
| — |
Pressure | 0.001 atm | — |
Thickness | ≤ 40 cm | — |
Thickness | ≤ 60 cm | — |
Thickness | ≤ 120 cm | — |
Thickness | ≤ 180 cm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 3 mm | — |
Thickness | ≤ 5 mm | — |
Thickness | ≤ 10 mm | — |
Thickness | ≤ 25 mm | — |
Thickness | ≤ 50 mm | — |
Thickness | ≤ 75 mm | — |
Thickness | ≤ 200 mm | — |
Table 5
Experiment 3 As seed crystals, two types of G aN substrates J and K shown in Table 5 below were prepared.
p. 36
Table 6
The conditions were as shown in Table 6 below, and the growth time was set to 1 hour.
p. 36
Table 7
The results obtained in Experiment 3 are shown summarized in Table 7.
p. 36
Table 8
each of the above-described GaN substrates A and E under four sets of conditions (Conditions 1 to 4) shown in Table 8 below.
p. 37
Table 9
ective G aN substrates were measured by SIMS (Secondary I on Mass Spectroscopy), and the results are shown in Table 9 below.
p. 37
Table 10
grown on the first main surface of each of the G aN substrates M and N under three sets of conditions shown in Table 10 below.
p. 38
Table 11
ment 1, GaN was grown on the first main surface of the GaN substrate O under three sets of conditions shown in Table 11 below.
p. 39
NON-POLAR OR SEMI-POLAR GaN WAFER
NH₃
metal Ga
Ga
Cl₂
GaCl
| 0–3 atm |
| — |
Pressure | 0.001 atm | — |
Thickness | ≤ 40 cm | — |
Thickness | ≤ 60 cm | — |
Thickness | ≤ 120 cm | — |
Thickness | ≤ 180 cm | — |
Thickness | ≤ 1 mm | — |
Thickness | ≤ 3 mm | — |
Thickness | ≤ 5 mm | — |
Thickness | ≤ 10 mm | — |
Thickness | ≤ 25 mm | — |
Thickness | ≤ 50 mm | — |
Thickness | ≤ 75 mm | — |
Thickness | ≤ 200 mm | — |
Table 5
Experiment 3 As seed crystals, two types of G aN substrates J and K shown in Table 5 below were prepared.
p. 36
Table 6
The conditions were as shown in Table 6 below, and the growth time was set to 1 hour.
p. 36
Table 7
The results obtained in Experiment 3 are shown summarized in Table 7.
p. 36
Table 8
each of the above-described GaN substrates A and E under four sets of conditions (Conditions 1 to 4) shown in Table 8 below.
p. 37
Table 9
ective G aN substrates were measured by SIMS (Secondary I on Mass Spectroscopy), and the results are shown in Table 9 below.
p. 37
Table 10
grown on the first main surface of each of the G aN substrates M and N under three sets of conditions shown in Table 10 below.
p. 38
Table 11
ment 1, GaN was grown on the first main surface of the GaN substrate O under three sets of conditions shown in Table 11 below.
p. 39
NON-POLAR OR SEMI-POLAR GaN WAFER