Abstract

The present disclosure relates to a process for growth of graphene at a temperature above 1400°C on a silicon carbide surface by sublimation of silicon from the surface. The process comprises heating under special conditions up to growth temperature which ensured that the surface undergoes the proper modification for allowing homogenous graphene in one or more monolayers.

Abstract

The present disclosure relates to a process for growth of graphene at a temperature above 1400°C on a silicon carbide surface by sublimation of silicon from the surface. The process comprises heating under special conditions up to growth temperature which ensured that the surface undergoes the proper modification for allowing homogenous graphene in one or more monolayers.

Abstract

The present disclosure relates to a process for growth of graphene at a temperature above 1400°C on a silicon carbide surface by sublimation of silicon from the surface. The process comprises heating under special conditions up to growth temperature which ensured that the surface undergoes the proper modification for allowing homogenous graphene in one or more monolayers.

Abstract

The present disclosure relates to a process for growth of graphene at a temperature above 1400°C on a silicon carbide surface by sublimation of silicon from the surface. The process comprises heating under special conditions up to growth temperature which ensured that the surface undergoes the proper modification for allowing homogenous graphene in one or more monolayers.