Research paperExperimental CharacterizationCoherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbideJoop Hendriks, Carmem M. Gilardoni, Chris Adambukulam, Arne Laucht et al.arXiv preprint·2022·10.48550/arxiv.2210.09942·arXiv:2210.09942AbstractWe study coherent spin dynamics of an ensemble of vanadium defects in commercial 4H-SiC using optically detected magnetic resonance, Ramsey interferometry, and Hahn echo measurements around a clock transition. By tuning the optical probing wavelength, we select subensembles with different nearby 29Si nuclear-spin configurations and observe strong hyperfine coupling without compromising coherence, with dephasing times up to 7.2 µs and spin-echo coherence beyond tens of microseconds.Read more
Commercial 4H-SiC sample with naturally abundant isotopes containing an ensemble of vanadium defects studied by ODMR and pulsed spin resonance.4 characterizations5 properties3 figuresExperimentalV:4H-SiCStudied MaterialSiCSubstrate / Dielectric29SiAdsorbate Species51VStudied MaterialExpand
Research paperExperimental CharacterizationCoherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbideJoop Hendriks, Carmem M. Gilardoni, Chris Adambukulam, Arne Laucht et al.arXiv preprint·2022·10.48550/arxiv.2210.09942·arXiv:2210.09942AbstractWe study coherent spin dynamics of an ensemble of vanadium defects in commercial 4H-SiC using optically detected magnetic resonance, Ramsey interferometry, and Hahn echo measurements around a clock transition. By tuning the optical probing wavelength, we select subensembles with different nearby 29Si nuclear-spin configurations and observe strong hyperfine coupling without compromising coherence, with dephasing times up to 7.2 µs and spin-echo coherence beyond tens of microseconds.Read more
Commercial 4H-SiC sample with naturally abundant isotopes containing an ensemble of vanadium defects studied by ODMR and pulsed spin resonance.4 characterizations5 properties3 figuresExperimentalV:4H-SiCStudied MaterialSiCSubstrate / Dielectric29SiAdsorbate Species51VStudied MaterialExpand
Research paperExperimental CharacterizationCoherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbideJoop Hendriks, Carmem M. Gilardoni, Chris Adambukulam, Arne Laucht et al.arXiv preprint·2022·10.48550/arxiv.2210.09942·arXiv:2210.09942AbstractWe study coherent spin dynamics of an ensemble of vanadium defects in commercial 4H-SiC using optically detected magnetic resonance, Ramsey interferometry, and Hahn echo measurements around a clock transition. By tuning the optical probing wavelength, we select subensembles with different nearby 29Si nuclear-spin configurations and observe strong hyperfine coupling without compromising coherence, with dephasing times up to 7.2 µs and spin-echo coherence beyond tens of microseconds.Read more
Commercial 4H-SiC sample with naturally abundant isotopes containing an ensemble of vanadium defects studied by ODMR and pulsed spin resonance.4 characterizations5 properties3 figuresExperimentalV:4H-SiCStudied MaterialSiCSubstrate / Dielectric29SiAdsorbate Species51VStudied MaterialExpand
Research paperExperimental CharacterizationCoherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbideJoop Hendriks, Carmem M. Gilardoni, Chris Adambukulam, Arne Laucht et al.arXiv preprint·2022·10.48550/arxiv.2210.09942·arXiv:2210.09942AbstractWe study coherent spin dynamics of an ensemble of vanadium defects in commercial 4H-SiC using optically detected magnetic resonance, Ramsey interferometry, and Hahn echo measurements around a clock transition. By tuning the optical probing wavelength, we select subensembles with different nearby 29Si nuclear-spin configurations and observe strong hyperfine coupling without compromising coherence, with dephasing times up to 7.2 µs and spin-echo coherence beyond tens of microseconds.Read more
Commercial 4H-SiC sample with naturally abundant isotopes containing an ensemble of vanadium defects studied by ODMR and pulsed spin resonance.4 characterizations5 properties3 figuresExperimentalV:4H-SiCStudied MaterialSiCSubstrate / Dielectric29SiAdsorbate Species51VStudied MaterialExpand
