Evidence of Floquet electronic steady states in graphene under continuous-wave mid-infrared irradiation

Yijing Liu; Christopher Yang; Gabriel Gaertner; John Huckabee; Alexey V. Suslov; Gil Refael; Frederik Nathan; Cyprian Lewandowski; Luis E. F. Foa Torres; Iliya Esin; Paola Barbara; Nikolai G. Kalugin

doi:10.1103/PhysRevB.89.121401

Paper details

Research paper

Experimental CharacterizationTheoreticalComputational Kinetic Rate Equation ModelComputed Band Structure

Evidence of Floquet electronic steady states in graphene under continuous-wave mid-infrared irradiation

Yijing Liu, Christopher Yang, Gabriel Gaertner, John Huckabee et al.

Nature Physics·2024·10.1103/PhysRevB.89.121401·arXiv:2410.13930

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Top-gated epitaxial graphene device on SiC used for longitudinal photoresponse and Hall measurements.

1 characterization1 property2 figures

ExperimentalCStudied Material

Second top-gated epitaxial graphene device on the first chip.

1 characterization1 property2 figures

ExperimentalCStudied Material

Third top-gated epitaxial graphene device on the second chip.

1 characterization1 property2 figures

ExperimentalCStudied Material

Materials

graphene

Studied Material

Also known as

epitaxial graphene

studied material

silicon carbide

SiC

Substrate / Dielectric

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Evidence of Floquet electronic steady states in graphene under continuous-wave mid-infrared irradiation | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet Mobility	electron mobility	5000cm²/Vs	C	Top-gated epitaxial graphene device on SiC used for longitud Second top-gated epitaxial graphene device on the first chip Third top-gated epitaxial graphene device on the second chip		—
Ir Band Position	IR band	943cm⁻¹	C	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet Mobility	electron mobility	5000cm²/Vs	C	Top-gated epitaxial graphene device on SiC used for longitud Second top-gated epitaxial graphene device on the first chip Third top-gated epitaxial graphene device on the second chip		—
Ir Band Position	IR band	943cm⁻¹	C	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet Mobility	electron mobility	5000cm²/Vs	C	Top-gated epitaxial graphene device on SiC used for longitud Second top-gated epitaxial graphene device on the first chip Third top-gated epitaxial graphene device on the second chip		—
Ir Band Position	IR band	943cm⁻¹	C	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet Mobility	electron mobility	5000cm²/Vs	C	Top-gated epitaxial graphene device on SiC used for longitud Second top-gated epitaxial graphene device on the first chip Third top-gated epitaxial graphene device on the second chip		—
Ir Band Position	IR band	943cm⁻¹	C	—	—	—

Evidence of Floquet electronic steady states in graphene under continuous-wave mid-infrared irradiation

Samples

Top-gated epitaxial graphene device on SiC used for longitudinal photoresponse and Hall measurements.

Second top-gated epitaxial graphene device on the first chip.

Third top-gated epitaxial graphene device on the second chip.

Materials

Why these are connected

Evidence of Floquet electronic steady states in graphene under continuous-wave mid-infrared irradiation

Samples

Top-gated epitaxial graphene device on SiC used for longitudinal photoresponse and Hall measurements.

Second top-gated epitaxial graphene device on the first chip.

Third top-gated epitaxial graphene device on the second chip.

Materials

Why these are connected

Evidence of Floquet electronic steady states in graphene under continuous-wave mid-infrared irradiation

Samples

Top-gated epitaxial graphene device on SiC used for longitudinal photoresponse and Hall measurements.

Second top-gated epitaxial graphene device on the first chip.

Third top-gated epitaxial graphene device on the second chip.

Materials

Why these are connected

Evidence of Floquet electronic steady states in graphene under continuous-wave mid-infrared irradiation

Samples

Top-gated epitaxial graphene device on SiC used for longitudinal photoresponse and Hall measurements.

Second top-gated epitaxial graphene device on the first chip.

Third top-gated epitaxial graphene device on the second chip.

Materials

Why these are connected

Evidence of Floquet electronic steady states in graphene under continuous-wave mid-infrared irradiation

Samples

Top-gated epitaxial graphene device on SiC used for longitudinal photoresponse and Hall measurements.

Second top-gated epitaxial graphene device on the first chip.

Third top-gated epitaxial graphene device on the second chip.

Materials

Why these are connected

Evidence of Floquet electronic steady states in graphene under continuous-wave mid-infrared irradiation

Samples

Top-gated epitaxial graphene device on SiC used for longitudinal photoresponse and Hall measurements.

Second top-gated epitaxial graphene device on the first chip.

Third top-gated epitaxial graphene device on the second chip.

Materials

Why these are connected

Evidence of Floquet electronic steady states in graphene under continuous-wave mid-infrared irradiation

Samples

Top-gated epitaxial graphene device on SiC used for longitudinal photoresponse and Hall measurements.

Second top-gated epitaxial graphene device on the first chip.

Third top-gated epitaxial graphene device on the second chip.

Materials

Why these are connected

Evidence of Floquet electronic steady states in graphene under continuous-wave mid-infrared irradiation

Samples

Top-gated epitaxial graphene device on SiC used for longitudinal photoresponse and Hall measurements.

Second top-gated epitaxial graphene device on the first chip.

Third top-gated epitaxial graphene device on the second chip.

Materials

Why these are connected

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations