Scalable fabrication of edge contacts to 2D materials

Naveen Shetty; Hans He; Richa Mitra; Johanna Huhtasaari; Konstantina Iordanidou; Julia Wiktor; Sergey Kubatkin; Saroj Dash; Rositsa Yakimova; Lunjie Zeng; Eva Olsson; Samuel Lara-Avila

doi:10.48550/arxiv.2206.03839

Paper details

Research paper

Experimental Characterization

Scalable fabrication of edge contacts to 2D materials

Naveen Shetty, Hans He, Richa Mitra, Johanna Huhtasaari et al.

2022·10.48550/arxiv.2206.03839·arXiv:2206.03839

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Epitaxial graphene devices with edge contacts fabricated on silicon carbide for TLM and Hall-bar transport characterization.

1 preparation1 characterization7 properties3 figures

ExperimentalCStudied MaterialSiCSubstrate / Dielectric

MoS₂ flake device fabricated with edge contacts for room-temperature and cryogenic FET transport measurements.

1 preparation1 characterization4 properties

ExperimentalMoS₂Studied Material

Materials

Graphene

Studied Material

Also known as

epitaxial grapheneepigraphene

studied material

Molybdenum disulfide

MoS₂

Studied Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Scalable fabrication of edge contacts to 2D materials | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Sheet Resistance	graphene sheet resistance	7616ohm/sq	C	Epitaxial graphene devices with edge contacts fabricated on	—
Specific Contact Resistance	median specific contact resistance	67ohm um	C	Epitaxial graphene devices with edge contacts fabricated on	—
Specific Contact Resistance	mean specific contact resistance	82ohm um	C	Epitaxial graphene devices with edge contacts fabricated on	—
Specific Contact Resistance	contact resistance intercept	~0ohm	C	Epitaxial graphene devices with edge contacts fabricated on	—
Carrier Density	carrier density range	1010-1011cm⁻²	C	Epitaxial graphene devices with edge contacts fabricated on	—
Specific Contact Resistance	median specific contact resistance	~67ohm um	C	Epitaxial graphene devices with edge contacts fabricated on	—
Quantized Hall Resistance	transverse resistance quantum Hall plateau	12900ohm	C	Epitaxial graphene devices with edge contacts fabricated on	—
Fet On Off Ratio	room-temperature ON/OFF ratio	>10^6	MoS₂	MoS₂ flake device fabricated with edge contacts for room-tem	—
Fet On Off Ratio	cryogenic ON/OFF ratio	>10^9	MoS₂	MoS₂ flake device fabricated with edge contacts for room-tem	—
Current Density	current density	416uA/um	MoS₂	MoS₂ flake device fabricated with edge contacts for room-tem	—
Current Density	current density	761uA/um	MoS₂	MoS₂ flake device fabricated with edge contacts for room-tem	—

Properties

Type	Label	Value	Material	Sample	Source
Sheet Resistance	graphene sheet resistance	7616ohm/sq	C	Epitaxial graphene devices with edge contacts fabricated on	—
Specific Contact Resistance	median specific contact resistance	67ohm um	C	Epitaxial graphene devices with edge contacts fabricated on	—
Specific Contact Resistance	mean specific contact resistance	82ohm um	C	Epitaxial graphene devices with edge contacts fabricated on	—
Specific Contact Resistance	contact resistance intercept	~0ohm	C	Epitaxial graphene devices with edge contacts fabricated on	—
Carrier Density	carrier density range	1010-1011cm⁻²	C	Epitaxial graphene devices with edge contacts fabricated on	—
Specific Contact Resistance	median specific contact resistance	~67ohm um	C	Epitaxial graphene devices with edge contacts fabricated on	—
Quantized Hall Resistance	transverse resistance quantum Hall plateau	12900ohm	C	Epitaxial graphene devices with edge contacts fabricated on	—
Fet On Off Ratio	room-temperature ON/OFF ratio	>10^6	MoS₂	MoS₂ flake device fabricated with edge contacts for room-tem	—
Fet On Off Ratio	cryogenic ON/OFF ratio	>10^9	MoS₂	MoS₂ flake device fabricated with edge contacts for room-tem	—
Current Density	current density	416uA/um	MoS₂	MoS₂ flake device fabricated with edge contacts for room-tem	—
Current Density	current density	761uA/um	MoS₂	MoS₂ flake device fabricated with edge contacts for room-tem	—

Properties

Type	Label	Value	Material	Sample	Source
Sheet Resistance	graphene sheet resistance	7616ohm/sq	C	Epitaxial graphene devices with edge contacts fabricated on	—
Specific Contact Resistance	median specific contact resistance	67ohm um	C	Epitaxial graphene devices with edge contacts fabricated on	—
Specific Contact Resistance	mean specific contact resistance	82ohm um	C	Epitaxial graphene devices with edge contacts fabricated on	—
Specific Contact Resistance	contact resistance intercept	~0ohm	C	Epitaxial graphene devices with edge contacts fabricated on	—
Carrier Density	carrier density range	1010-1011cm⁻²	C	Epitaxial graphene devices with edge contacts fabricated on	—
Specific Contact Resistance	median specific contact resistance	~67ohm um	C	Epitaxial graphene devices with edge contacts fabricated on	—
Quantized Hall Resistance	transverse resistance quantum Hall plateau	12900ohm	C	Epitaxial graphene devices with edge contacts fabricated on	—
Fet On Off Ratio	room-temperature ON/OFF ratio	>10^6	MoS₂	MoS₂ flake device fabricated with edge contacts for room-tem	—
Fet On Off Ratio	cryogenic ON/OFF ratio	>10^9	MoS₂	MoS₂ flake device fabricated with edge contacts for room-tem	—
Current Density	current density	416uA/um	MoS₂	MoS₂ flake device fabricated with edge contacts for room-tem	—
Current Density	current density	761uA/um	MoS₂	MoS₂ flake device fabricated with edge contacts for room-tem	—

Properties

Type	Label	Value	Material	Sample	Source
Sheet Resistance	graphene sheet resistance	7616ohm/sq	C	Epitaxial graphene devices with edge contacts fabricated on	—
Specific Contact Resistance	median specific contact resistance	67ohm um	C	Epitaxial graphene devices with edge contacts fabricated on	—
Specific Contact Resistance	mean specific contact resistance	82ohm um	C	Epitaxial graphene devices with edge contacts fabricated on	—
Specific Contact Resistance	contact resistance intercept	~0ohm	C	Epitaxial graphene devices with edge contacts fabricated on	—
Carrier Density	carrier density range	1010-1011cm⁻²	C	Epitaxial graphene devices with edge contacts fabricated on	—
Specific Contact Resistance	median specific contact resistance	~67ohm um	C	Epitaxial graphene devices with edge contacts fabricated on	—
Quantized Hall Resistance	transverse resistance quantum Hall plateau	12900ohm	C	Epitaxial graphene devices with edge contacts fabricated on	—
Fet On Off Ratio	room-temperature ON/OFF ratio	>10^6	MoS₂	MoS₂ flake device fabricated with edge contacts for room-tem	—
Fet On Off Ratio	cryogenic ON/OFF ratio	>10^9	MoS₂	MoS₂ flake device fabricated with edge contacts for room-tem	—
Current Density	current density	416uA/um	MoS₂	MoS₂ flake device fabricated with edge contacts for room-tem	—
Current Density	current density	761uA/um	MoS₂	MoS₂ flake device fabricated with edge contacts for room-tem	—

Scalable fabrication of edge contacts to 2D materials

Samples

Epitaxial graphene devices with edge contacts fabricated on silicon carbide for TLM and Hall-bar transport characterization.

MoS₂ flake device fabricated with edge contacts for room-temperature and cryogenic FET transport measurements.

Materials

Why these are connected

Scalable fabrication of edge contacts to 2D materials

Samples

Epitaxial graphene devices with edge contacts fabricated on silicon carbide for TLM and Hall-bar transport characterization.

MoS₂ flake device fabricated with edge contacts for room-temperature and cryogenic FET transport measurements.

Materials

Why these are connected

Scalable fabrication of edge contacts to 2D materials

Samples

Epitaxial graphene devices with edge contacts fabricated on silicon carbide for TLM and Hall-bar transport characterization.

MoS₂ flake device fabricated with edge contacts for room-temperature and cryogenic FET transport measurements.

Materials

Why these are connected

Scalable fabrication of edge contacts to 2D materials

Samples

Epitaxial graphene devices with edge contacts fabricated on silicon carbide for TLM and Hall-bar transport characterization.

MoS₂ flake device fabricated with edge contacts for room-temperature and cryogenic FET transport measurements.

Materials

Why these are connected

Scalable fabrication of edge contacts to 2D materials

Samples

Epitaxial graphene devices with edge contacts fabricated on silicon carbide for TLM and Hall-bar transport characterization.

MoS₂ flake device fabricated with edge contacts for room-temperature and cryogenic FET transport measurements.

Materials

Why these are connected

Scalable fabrication of edge contacts to 2D materials

Samples

Epitaxial graphene devices with edge contacts fabricated on silicon carbide for TLM and Hall-bar transport characterization.

MoS₂ flake device fabricated with edge contacts for room-temperature and cryogenic FET transport measurements.

Materials

Why these are connected

Scalable fabrication of edge contacts to 2D materials

Samples

Epitaxial graphene devices with edge contacts fabricated on silicon carbide for TLM and Hall-bar transport characterization.

MoS₂ flake device fabricated with edge contacts for room-temperature and cryogenic FET transport measurements.

Materials

Why these are connected

Scalable fabrication of edge contacts to 2D materials

Samples

Epitaxial graphene devices with edge contacts fabricated on silicon carbide for TLM and Hall-bar transport characterization.

MoS₂ flake device fabricated with edge contacts for room-temperature and cryogenic FET transport measurements.

Materials

Why these are connected

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties