Research paperExperimental CharacterizationScalable fabrication of edge contacts to 2D materialsNaveen Shetty, Hans He, Richa Mitra, Johanna Huhtasaari et al.2022·10.48550/arxiv.2206.03839·arXiv:2206.03839AbstractWe report a reliable and scalable fabrication method for producing electrical contacts to two-dimensional (2D) materials, based on the tri-layer resist system. We demonstrate the applicability of this method for epitaxial graphene on silicon carbide (epigraphene) and the transition metal dichalcogenide molybdenum disulfide (MoS₂). For epigraphene, data on nearly 70 contacts result in median values of the specific contact resistances rhoc ~ 67 ohm um, and follow the Landauer quantum limit, rhoc ~ n^-1/2, with n being the carrier density of graphene. For MoS₂ flakes, our edge contacts enable field effect transistors (FET) with ON/OFF ratio of >10⁶ at room temperature (>10⁹ at cryogenic temperatures). The fabrication route demonstrated allows for contact metallization using thermal evaporation and also by sputtering.Read more
Epitaxial graphene devices with edge contacts fabricated on silicon carbide for TLM and Hall-bar transport characterization.1 preparation1 characterization7 properties3 figuresExperimentalCStudied MaterialSiCSubstrate / DielectricExpand
MoS₂ flake device fabricated with edge contacts for room-temperature and cryogenic FET transport measurements.1 preparation1 characterization4 propertiesExperimentalMoS₂Studied MaterialExpand
Research paperExperimental CharacterizationScalable fabrication of edge contacts to 2D materialsNaveen Shetty, Hans He, Richa Mitra, Johanna Huhtasaari et al.2022·10.48550/arxiv.2206.03839·arXiv:2206.03839AbstractWe report a reliable and scalable fabrication method for producing electrical contacts to two-dimensional (2D) materials, based on the tri-layer resist system. We demonstrate the applicability of this method for epitaxial graphene on silicon carbide (epigraphene) and the transition metal dichalcogenide molybdenum disulfide (MoS₂). For epigraphene, data on nearly 70 contacts result in median values of the specific contact resistances rhoc ~ 67 ohm um, and follow the Landauer quantum limit, rhoc ~ n^-1/2, with n being the carrier density of graphene. For MoS₂ flakes, our edge contacts enable field effect transistors (FET) with ON/OFF ratio of >10⁶ at room temperature (>10⁹ at cryogenic temperatures). The fabrication route demonstrated allows for contact metallization using thermal evaporation and also by sputtering.Read more
Epitaxial graphene devices with edge contacts fabricated on silicon carbide for TLM and Hall-bar transport characterization.1 preparation1 characterization7 properties3 figuresExperimentalCStudied MaterialSiCSubstrate / DielectricExpand
MoS₂ flake device fabricated with edge contacts for room-temperature and cryogenic FET transport measurements.1 preparation1 characterization4 propertiesExperimentalMoS₂Studied MaterialExpand
Research paperExperimental CharacterizationScalable fabrication of edge contacts to 2D materialsNaveen Shetty, Hans He, Richa Mitra, Johanna Huhtasaari et al.2022·10.48550/arxiv.2206.03839·arXiv:2206.03839AbstractWe report a reliable and scalable fabrication method for producing electrical contacts to two-dimensional (2D) materials, based on the tri-layer resist system. We demonstrate the applicability of this method for epitaxial graphene on silicon carbide (epigraphene) and the transition metal dichalcogenide molybdenum disulfide (MoS₂). For epigraphene, data on nearly 70 contacts result in median values of the specific contact resistances rhoc ~ 67 ohm um, and follow the Landauer quantum limit, rhoc ~ n^-1/2, with n being the carrier density of graphene. For MoS₂ flakes, our edge contacts enable field effect transistors (FET) with ON/OFF ratio of >10⁶ at room temperature (>10⁹ at cryogenic temperatures). The fabrication route demonstrated allows for contact metallization using thermal evaporation and also by sputtering.Read more
Epitaxial graphene devices with edge contacts fabricated on silicon carbide for TLM and Hall-bar transport characterization.1 preparation1 characterization7 properties3 figuresExperimentalCStudied MaterialSiCSubstrate / DielectricExpand
MoS₂ flake device fabricated with edge contacts for room-temperature and cryogenic FET transport measurements.1 preparation1 characterization4 propertiesExperimentalMoS₂Studied MaterialExpand
Research paperExperimental CharacterizationScalable fabrication of edge contacts to 2D materialsNaveen Shetty, Hans He, Richa Mitra, Johanna Huhtasaari et al.2022·10.48550/arxiv.2206.03839·arXiv:2206.03839AbstractWe report a reliable and scalable fabrication method for producing electrical contacts to two-dimensional (2D) materials, based on the tri-layer resist system. We demonstrate the applicability of this method for epitaxial graphene on silicon carbide (epigraphene) and the transition metal dichalcogenide molybdenum disulfide (MoS₂). For epigraphene, data on nearly 70 contacts result in median values of the specific contact resistances rhoc ~ 67 ohm um, and follow the Landauer quantum limit, rhoc ~ n^-1/2, with n being the carrier density of graphene. For MoS₂ flakes, our edge contacts enable field effect transistors (FET) with ON/OFF ratio of >10⁶ at room temperature (>10⁹ at cryogenic temperatures). The fabrication route demonstrated allows for contact metallization using thermal evaporation and also by sputtering.Read more
Epitaxial graphene devices with edge contacts fabricated on silicon carbide for TLM and Hall-bar transport characterization.1 preparation1 characterization7 properties3 figuresExperimentalCStudied MaterialSiCSubstrate / DielectricExpand
MoS₂ flake device fabricated with edge contacts for room-temperature and cryogenic FET transport measurements.1 preparation1 characterization4 propertiesExperimentalMoS₂Studied MaterialExpand
